A sulfide glass surface strong salt mist-resistant DLC film, and a preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHONGSHAN INST OF CHANGCHUN UNIV OF SCI & TECH
- Filing Date
- 2026-04-14
- Publication Date
- 2026-05-29
Smart Images
Figure CN122105328A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical thin film technology, specifically to a chalcogenide glass surface DLC thin film with strong salt spray resistance, its preparation method, and its application. Background Technology
[0002] Chalcogenide glass is widely used in infrared thermal imaging, military night vision, aerospace remote sensing, and automotive driver assistance systems due to its excellent mid- and far-infrared transmittance, good formability, and low cost. However, chalcogenide glass is relatively soft, has a large coefficient of thermal expansion, and poor chemical stability. It is easily corroded and worn in harsh environments (especially marine salt spray environments), which seriously affects its optical performance and service life.
[0003] Diamond-like carbon (DLC) films possess high hardness, low coefficient of friction, good chemical inertness, and infrared transparency, making them ideal protective and antireflective coatings for chalcogenide glasses. Currently, common methods for preparing DLC films include magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), and filtered cathode vacuum arc deposition (FCVA). However, DLC films prepared by a single method often have performance limitations: for example, DLC films (aC:H) prepared by PECVD exhibit limited performance characteristics with high sp... 2 It is predominantly bonded, with low internal stress and good uniformity, but lacks density and has limited salt spray resistance; DLC films (ta-C) prepared by the FCVA method have low internal stress and good uniformity. 3 It has a high content (>90%), is dense and hard, and has strong corrosion resistance, but has high internal stress, limited thickness, and poor uniformity.
[0004] In the prior art, the infrared antireflective protective film layer coated on the surface of chalcogenide glass usually has a salt spray resistance time of about 300 hours, which is difficult to meet the requirements of marine environment or long service life. Therefore, developing a DLC film with high density, low stress, excellent adhesion and ultra-long salt spray resistance has become an urgent technical problem to be solved in this field. Summary of the Invention
[0005] This invention provides a DLC film with strong salt spray resistance on the surface of chalcogenide glass, its preparation method and application, to solve the defects of existing DLC films on the surface of chalcogenide glass such as insufficient salt spray resistance, easy film peeling, and difficulty in achieving both density and uniformity.
[0006] To achieve the above objectives, the present invention provides the following technical solution: A DLC film with strong salt spray resistance on the surface of chalcogenide glass includes a first DLC layer prepared by filtered cathode vacuum arc technology and a second DLC layer prepared by chemical vapor deposition technology. The first DLC layer is located on the side close to the chalcogenide glass substrate, and the second DLC layer is located outside the first DLC layer.
[0007] Preferably, the thickness of the first DLC layer is 10-50 nm, and the thickness of the second DLC layer is the remaining design thickness. If the first DLC layer is too thin (<10 nm), it cannot form a dense barrier layer, resulting in salt spray resistance failure. If it is too thick (>50 nm), the excessive internal stress of the FCVA film layer will easily cause delamination.
[0008] Preferably, the first DLC layer is prepared using filtered cathode vacuum arc technology, with the following process parameters: recompression current 2.5A, filtering current 8A, arc current 3A, bias voltage 130V, and argon flow rate 7sccm.
[0009] Preferably, the second DLC layer is prepared using chemical vapor deposition technology with the following process parameters: power 780-820W, pressure 8-10Pa, electrode spacing 17-21cm, and methane gas filling.
[0010] Preferably, a dielectric film system is further provided between the chalcogenide glass substrate and the first DLC layer. The dielectric film system is composed of alternately deposited Ge layers and ZnS layers, and the dielectric film system plays the role of infrared anti-reflection and stress matching.
[0011] Preferably, the Ge layer is deposited by electron beam evaporation at a rate of 0.3–0.5 nm / s; the ZnS layer is deposited by resistive evaporation at a rate of 0.8–1.5 nm / s.
[0012] To improve the adhesion between the Ge layer and the chalcogenide glass substrate, the deposition of the first Ge layer in the dielectric film system includes two parts: first, ion source is turned on during electron beam evaporation to perform ion-assisted deposition of 10-20 nm, and then the ion source is turned off and electron beam evaporation is used to deposit the remaining Ge.
[0013] The ion source used for the ion-assisted deposition is either a Kaufman ion source or a Hall ion source; when using a Kaufman ion source, the ion energy is 150–200 eV and the beam current density is 100–150 mA; when using a Hall ion source, the voltage is 120–160 V and the current is 1.2–1.5 A.
[0014] The present invention also provides a method for preparing the above-mentioned chalcogenide glass surface highly salt spray resistant DLC film, comprising the following steps: (1) The chalcogenide glass substrate is cleaned and bombarded with ion beam; (2) Depositing a dielectric film system on a substrate; (3) A first DLC layer is deposited on the surface of the dielectric film system using filtered cathode vacuum arc technology; (4) A second DLC layer is deposited on the surface of the first DLC layer using chemical vapor deposition technology; (5) A DLC film with strong salt spray resistance on the surface of the chalcogenide glass is obtained.
[0015] Preferably, the ion beam bombardment treatment in step (1) uses a Kaufman ion source or a Hall ion source; when using a Kaufman ion source, the ion energy is 100–1500 eV and the beam current density is 100–150 mA; when using a Hall ion source, the voltage is 100–130 V and the current is 1.0–1.2 A; the background vacuum is higher than 4.0 × 10⁻⁶ eV. -3 Pa, ion bombardment can clean the substrate surface and form a diffusion layer, enhancing the adhesion of the film.
[0016] Preferably, in step (2), the background vacuum is higher than 8.0 × 10⁻⁶ when depositing the dielectric film system. -4 Pa, the base baking temperature is 85~115℃, and the temperature is maintained for more than 30 minutes.
[0017] Preferably, the process parameters of the first DLC layer in step (3) are: recompression current 2.5A, filtration current 8A, beam arc current 3A, bias voltage 130V, and argon flow rate 7sccm.
[0018] Preferably, the process parameters of the second DLC layer in step (4) are: power 780-820W, pressure 8-10Pa, electrode spacing 17-21cm, and methane gas filling.
[0019] Preferably, between steps (3) and (4), the following is further included: plasma treatment of the surface of the first DLC layer, the treatment gas is argon, the gas flow rate is 10-20 sccm, the treatment time is 2-4 min, the treatment power is 250-350 W, and the working pressure is 1.0-2.0 Pa; this can effectively remove micro-pollutants on the surface of the first DLC layer and introduce active groups to improve the interlayer bonding force.
[0020] The present invention also provides the application of the above-mentioned salt spray resistant DLC film on the surface of chalcogenide glass in infrared optical components, aerospace equipment, marine detection equipment or automotive infrared sensors.
[0021] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention employs a dual-layer DLC structure combining FCVA and CVD, fully leveraging the advantages of both technologies: the thin ta-C layer (first DLC layer) prepared by FCVD exhibits extremely high sp... 3 With a content of >90%, it is dense and free of pinholes, and has strong chemical inertness, which can effectively block salt spray penetration. The thick aC:H (second DLC layer) prepared by CVD has low internal stress and good uniformity, which can realize the deposition of a thicker antireflection film layer. Moreover, the process is mature and controllable. The synergistic effect of the two makes the film have high density, low stress and excellent optical properties.
[0022] 2. By optimizing the thickness of the first DLC layer (10-50nm), sufficient dense barrier capability is ensured while avoiding the problem of film delamination caused by excessive internal stress of the FCVA film layer, thus achieving strong salt spray resistance performance of more than 1000 hours (existing technologies typically only last around 300 hours).
[0023] 3. In the dielectric film system, the first Ge layer is deposited using a two-step deposition method of ion-assisted thin film + electron beam evaporation substrate, which significantly improves the adhesion between the Ge film and the chalcogenide glass substrate and overcomes the problem of easy film peeling caused by the large thermal expansion coefficient and soft texture of chalcogenide glass.
[0024] 4. The thin film of the present invention has an average reflectivity of less than 1.02% or even less than 0.95% in the 8-12μm infrared band, and has both excellent infrared anti-reflection function and extreme environment protection capability, and can be widely used in military, aerospace, marine, automotive and other fields. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the structure of the DLC film with strong salt spray resistance on the surface of chalcogenide glass according to the present invention.
[0026] Figure 2 The image shows the optical reflectance curve of the thin film prepared in Example 1 of this invention in the 8-12 μm wavelength band.
[0027] Figure 3 The image shows the optical reflectance curve of the thin film prepared in Example 2 of this invention in the 8-12 μm wavelength band.
[0028] Figure 4 SEM images of the surface morphology of DLC films prepared by the FCVA method.
[0029] Figure 5 SEM images of the surface morphology of DLC films prepared by CVD method. Detailed Implementation
[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.
[0031] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0032] Example 1 In this embodiment, chalcogenide glass IRG206 is used as the substrate, with a diameter of 25 mm and a thickness of 1 mm.
[0033] First, the substrate was cleaned: it was ultrasonically cleaned with ethanol and acetone for 15 minutes each, dried with nitrogen, and then placed in a vacuum chamber.
[0034] The vacuum chamber was evacuated to a background vacuum level higher than 4.0 × 10⁻⁶. -3 After Pa, the Hall ion source was turned on to bombard and clean the substrate. The parameters were set as follows: voltage 120V, current 1.1A, bombardment time 10min.
[0035] Next, the substrate was heated to 100°C and held at that temperature for 30 minutes, while maintaining a vacuum level better than 8.0 × 10⁻⁶. -4 Pa.
[0036] The film thickness was designed using the film design software TFCcal, with a target wavelength range of 8–12 μm. The design results are as follows: first layer Ge 100 nm, second layer ZnS 529.50 nm, third layer Ge 343.13 nm, fourth layer ZnS 214.96 nm, fifth layer Ge 714.50 nm, sixth layer (first DLC layer) 30 nm, and seventh layer (second DLC layer) 1116.54 nm.
[0037] Deposition process: The Ge layer was evaporated using an electron beam at a rate of 0.4 nm / s. The first 15 nm of the first Ge layer was deposited with the aid of a Hall ion source (140 V, 1.3 A) to improve adhesion, while the remaining part was evaporated normally.
[0038] The ZnS layer was applied using resistive evaporation at a rate of 1.0 nm / s.
[0039] The first DLC layer was deposited using FCVA technology with the following process parameters: recompression current 2.5A, filtration current 8A, beam arc current 3A, bias voltage 130V, argon flow rate 7sccm, and deposition thickness 30nm.
[0040] After deposition, the vacuum chamber of the FCVA equipment is opened, the chalcogenide glass substrate with the first DLC layer is removed, and transferred to the CVD deposition equipment. After the substrate is loaded into the CVD equipment, the vacuum level is evacuated to a background vacuum level higher than 8.0 × 10⁻⁶. -4 Pa.
[0041] The second DLC layer was deposited using the CVD method with the following process parameters: power 800W, pressure 9Pa, electrode spacing 19cm, methane gas filling, and deposition thickness 1116.54nm.
[0042] After the samples were prepared, their reflectance in the 8–12 μm band was measured using a Fourier transform infrared spectrometer. The results are as follows: Figure 2 As shown, the average reflectivity is less than 1.02%.
[0043] Salt spray resistance test: According to GB / T 2423.17 standard, at a temperature of 35℃±2℃, a NaCl solution concentration of 5%±1%, a pH value of 6.5~7.2, the sedimentation rate is 1~3mL / 80cm. 2 Spray continuously for 1000 hours under the condition of ·h; after the test, rinse the sample surface with clean water and wipe it dry. Observe the film layer under an optical microscope and there are no phenomena such as peeling, flaking, or corrosion spots. The adhesion test (cross-cut test) is qualified.
[0044] Example 2 In this embodiment, chalcogenide glass IRG201 is used as the substrate, and the remaining steps are the same as in Embodiment 1.
[0045] The membrane design results are as follows: first layer Ge 239.96nm, second layer ZnS 218.59nm, third layer Ge 672.58nm, fourth layer (first DLC layer) 40nm, fifth layer (second DLC layer) 1088.85nm.
[0046] The deposition parameters were the same as in Example 1, except that the thickness was adjusted according to the design.
[0047] Test results: The average reflectivity in the 8–12 μm band is less than 0.95% (see...) Figure 3 The membrane remained intact after 1000 hours of salt spray resistance testing.
[0048] Example 3 In this embodiment, chalcogenide glass IRG206 is used as the substrate, and the film system design is the same as in Example 1.
[0049] The difference from Example 1 is that the thickness of the first DLC layer is adjusted to 20 nm, and the thickness of the second DLC layer is adjusted to 1126.54 nm to maintain a consistent total optical thickness. The remaining process parameters are the same as in Example 1.
[0050] Test results: The average reflectivity in the 8-12μm band is less than 1.05%, and the film remains intact after 1000 hours of salt spray resistance testing.
[0051] Example 4 The difference between this embodiment and Embodiment 1 is that a plasma treatment step is added after the first DLC layer (FCVA) deposition and before the second DLC layer (CVD) deposition, as follows: Substrate and membrane design: Same as in Example 1, but IRG206 substrate is selected, and the thickness of the dielectric membrane and the total thickness of the DLC layer are exactly the same as in Example 1.
[0052] First-layer Ge: 100nm Second layer ZnS: 529.50nm Third-layer Ge: 343.13nm Fourth layer ZnS: 214.96nm Fifth layer Ge: 714.50nm Sixth layer (first DLC layer): 30nm (FCVA) Intermediate processing: Plasma treatment Seventh layer (second DLC layer): 1116.54nm (CVD) Deposition process: (1) The deposition parameters of the Ge layer and ZnS layer are exactly the same as those in Example 1.
[0053] (2) The first DLC layer was deposited using FCVA technology. The process parameters were: recompression current 2.5A, filtration current 8A, beam arc current 3A, bias voltage 130V, argon flow rate 7sccm, and deposition thickness 30nm. After deposition, the vacuum chamber of the FCVA equipment was opened, and the chalcogenide glass substrate with the first DLC layer was taken out and transferred to the CVD deposition equipment.
[0054] (3) After loading the substrate into the CVD equipment, evacuate the system until the background vacuum level is higher than 8.0 × 10⁻⁶. -4 Pa.
[0055] (4) Turn on the plasma source in the CVD equipment and perform argon plasma treatment on the surface of the first DLC layer; the treatment parameters are: Processing gas: Argon (Ar), 99.999% purity. Gas flow rate: 15 sccm Processing power: 300W (using an RF plasma source); or voltage 120V, current 1.2A (using a Hall ion source). Processing time: 3 min Working pressure: 1.5Pa (5) After the treatment is completed, turn off the plasma source and let it stand for 1 minute.
[0056] (6) The second DLC layer was deposited by CVD method. The process parameters were: power 800W, pressure 9Pa, electrode spacing 19cm, methane gas was introduced, and the deposition thickness was 1116.54nm.
[0057] Test results: Optical performance: The average reflectance in the 8-12 μm band is less than 1.02%, which is comparable to that in Example 1, indicating that plasma treatment did not damage the optical performance of the film.
[0058] Salt spray resistance: After 1200 hours of testing according to the same standard, the film layer remained intact, with no corrosion spots or film delamination.
[0059] Adhesion test: The cross-cut test (ISO 9211-4) was used. The peel strength was improved by about 20% compared with Example 1 (specific data: Example 1 is grade 5B, Example 4 is grade 5B+, and the edges are smoother after the cross-cut test).
[0060] Comparative Example 1 The only difference between this comparative example and Example 1 is that the first DLC layer is omitted, and the second DLC layer (1146.54 nm thick, to keep the total optical thickness similar) is deposited directly on the dielectric film system using the CVD method. All other conditions are the same.
[0061] Salt spray test results: Corrosion spots appeared on the film surface after about 320 hours, and the salt spray test failed.
[0062] Comparative Example 2 The only difference between this comparative example and Example 1 is that the second DLC layer is omitted, and a single-layer DLC with a thickness of 1146.54 nm is deposited on the dielectric film system using FCVA technology.
[0063] Deposition results: When the thickness of FCVA-DLC exceeded about 80nm, obvious cracks appeared in the film layer, and the complete deposition of 1146.54nm could not be completed. Therefore, subsequent salt spray resistance tests could not be carried out.
[0064] Comparative Example 3 The difference between this comparative example and Example 1 is that the thickness of the first DLC layer is adjusted to 5 nm, and the thickness of the second DLC layer is adjusted accordingly to 1141.54 nm.
[0065] Salt spray test results: Corrosion spots appeared on the film after about 450 hours, and the salt spray test failed.
[0066] Comparative Example 4 The difference between this comparative example and Example 1 is that the thickness of the first DLC layer is adjusted to 80 nm, and the thickness of the second DLC layer is adjusted accordingly to 1066.54 nm.
[0067] Post-deposition observation: Fine cracks appeared on the surface of the film; Salt spray test results: The film failed due to corrosion after about 600 hours.
[0068] Comparative Example 5 The difference between this comparative example and Example 1 is that the FCVA bias voltage of the first DLC layer is adjusted to 150V.
[0069] Salt spray test results: Corrosion spots appeared on the film after about 700 hours, and the salt spray test failed.
[0070] Comparative Example 6 The difference between this comparative example and Example 1 is that the CVD power of the second DLC layer is adjusted to 700W.
[0071] Salt spray test results: Corrosion spots appeared on the film after about 650 hours, and the salt spray test failed.
[0072] Comparative Example 7 The difference between this comparative example and Example 1 is that the CVD pressure of the second DLC layer is adjusted to 12 Pa.
[0073] Salt spray test results: Corrosion spots appeared on the film after about 620 hours, and the salt spray test failed.
[0074] Comparative Example 8 The difference between this comparative example and Example 1 is that: the process parameters of multiple DLC layers are adjusted simultaneously, and a combination of conventional parameters commonly used in the art is adopted; wherein, the FCVA bias voltage of the first DLC layer is adjusted to 150V, the CVD power of the second DLC layer is adjusted to 700W, and the CVD pressure is adjusted to 12Pa.
[0075] Salt spray test results: Corrosion spots appeared on the film after about 550 hours, and the salt spray test failed.
[0076] The experimental results are summarized in Table 1: Experimental Results Analysis Comparative Example 1 (single-layer CVD-DLC) could only withstand 320 hours of salt spray, while Comparative Example 2 (single-layer FCVA-DLC) could not achieve thick film deposition due to excessive internal stress; indicating that the dual-layer structure of FCVA thin layer + CVD thick layer is the key to achieving high-strength salt spray resistance.
[0077] The salt spray resistance times of Comparative Example 3 (thickness 5nm) and Comparative Example 4 (thickness 80nm) were 450 hours and 600 hours, respectively, which were significantly lower than the 1000 hours or more of Examples 1-4. This indicates that the thickness of the first DLC layer must be controlled within the range of 10-50nm in order to balance the requirements of dense barrier and low stress.
[0078] Comparative Examples 5-7 adjusted the FCVA bias voltage, CVD power, and CVD pressure to outside the scope of this application, reducing the salt spray resistance time to 620-700 hours; Comparative Example 8 adjusted multiple parameters simultaneously, further reducing the salt spray resistance time to 550 hours, indicating that the process parameters (bias voltage 130V, power 780-820W, pressure 8-10Pa) defined in this application have a synergistic optimization effect, which can be easily expected by those not skilled in the art.
[0079] Example 4: Argon plasma treatment was added between the first DLC layer and the second DLC layer. The salt spray resistance time was increased from 1000 hours to 1200 hours, and the adhesion was increased by about 20%. This shows that the step can effectively remove interfacial contaminants, introduce active groups, and further improve the film adhesion and corrosion resistance.
[0080] In summary, this invention, through a double-layer DLC structure design, optimization and selection of key process parameters, and interfacial plasma treatment, achieves excellent infrared antireflection performance of DLC films on chalcogenide glass surfaces in the 8–12 μm band, while maintaining stable salt spray resistance for over 1000 hours, demonstrating significantly superior technical effects compared to existing technologies. Furthermore, a comparison of film surface morphology (see...) Figure 4 , Figure 5 As can be seen, the surface of the first DLC layer prepared by the FCVA method is smooth and dense, while the surface of the second DLC layer prepared by the CVD method is relatively rough. The combination of the two forms a composite film layer with complementary advantages.
[0081] It should be noted that, for the sake of simplicity, the foregoing embodiments are all described as a series of actions. However, those skilled in the art should understand that the present invention is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to the present invention. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to the present invention.
[0082] It should be understood that the disclosed technical solutions in the embodiments provided in this application can be implemented in other ways. For example, the device embodiments described above are merely illustrative, and the division of the units described above is only a logical functional division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or communication connections shown or discussed may be through some interfaces; the indirect coupling or communication connections between devices or units may be telecommunications or other forms.
[0083] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0084] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit the scope of protection of the invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on these embodiments, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can still combine, add, delete, or otherwise adjust the features of the various embodiments of the present invention according to the circumstances without conflict or creative effort, thereby obtaining different technical solutions that do not fundamentally depart from the concept of the present invention. These technical solutions also fall within the scope of protection of the present invention.
Claims
1. A DLC film with strong salt spray resistance on a chalcogenide glass surface, characterized in that, The DLC film includes a first DLC layer prepared by filtered cathode vacuum arc technology and a second DLC layer prepared by chemical vapor deposition technology. The first DLC layer is located on the side close to the chalcogenide glass substrate, and the second DLC layer is located outside the first DLC layer.
2. The DLC film with strong salt spray resistance on the surface of chalcogenide glass as described in claim 1, characterized in that, The thickness of the first DLC layer is 10-50 nm, and the thickness of the second DLC layer is the remaining design thickness.
3. The DLC film with strong salt spray resistance on the surface of chalcogenide glass as described in claim 1, characterized in that, A dielectric film system is also provided between the chalcogenide glass substrate and the first DLC layer. The dielectric film system consists of alternating deposited Ge layers and ZnS layers, wherein the first Ge layer is in contact with the chalcogenide glass substrate.
4. The DLC film with strong salt spray resistance on the surface of chalcogenide glass as described in claim 3, characterized in that, The Ge layer is deposited using electron beam evaporation at a rate of 0.3–0.5 nm / s. The deposition of the first Ge layer in contact with the chalcogenide glass substrate is divided into two parts: first, during electron beam evaporation, an ion source is turned on to perform ion-assisted deposition of 10–20 nm, and then the ion source is turned off and the remaining Ge is deposited using electron beam evaporation. The ZnS layer is deposited using resistive evaporation at a rate of 0.8–1.5 nm / s.
5. The DLC film with strong salt spray resistance on the surface of chalcogenide glass as described in claim 4, characterized in that, The ion source used for the ion-assisted deposition is either a Kaufman ion source or a Hall ion source; when using a Kaufman ion source, the ion energy is 150–200 eV and the beam current density is 100–150 mA; when using a Hall ion source, the voltage is 120–160 V and the current is 1.2–1.5 A.
6. A method for preparing a highly salt spray resistant DLC film on a chalcogenide glass surface as described in any one of claims 1-5, characterized in that, Includes the following steps: (1) The chalcogenide glass substrate is cleaned and bombarded with ion beam; (2) Depositing a dielectric film system on a substrate; (3) A first DLC layer is deposited on the surface of the dielectric film system using filtered cathode vacuum arc technology; (4) A second DLC layer is deposited on the surface of the first DLC layer using chemical vapor deposition technology; (5) A DLC film with strong salt spray resistance on the surface of the chalcogenide glass is obtained.
7. The method for preparing a highly salt spray resistant DLC film on a chalcogenide glass surface as described in claim 6, characterized in that, The ion beam bombardment treatment in step (1) uses a Kaufman ion source or a Hall ion source; when using a Kaufman ion source, the ion energy is 100–1500 eV and the beam current density is 100–150 mA; when using a Hall ion source, the voltage is 100–130 V and the current is 1.0–1.2 A; the background vacuum is higher than 4.0 × 10⁻⁶ eV. -3 Pa.
8. The method for preparing a highly salt spray resistant DLC film on a chalcogenide glass surface as described in claim 6, characterized in that, In step (2), the background vacuum level is higher than 8.0 × 10⁻⁶ when depositing the dielectric film system. -4 Pa, the base baking temperature is 85-115℃, and the temperature is held for more than 30 minutes; The process parameters for the first DLC layer in step (3) are: recompression current 2.5A, filtration current 8A, beam arc current 3A, bias voltage 130V, and argon flow rate 7sccm. The process parameters for the second DLC layer in step (4) are: power 780-820W, pressure 8-10Pa, electrode spacing 17-21cm, and methane gas filling.
9. The method for preparing a highly salt spray resistant DLC film on a chalcogenide glass surface as described in claim 6, characterized in that, Between steps (3) and (4), the following is also included: plasma treatment of the surface of the first DLC layer, the treatment gas is argon, the treatment time is 2 to 4 minutes, and the treatment power is 250 to 350 W.
10. The application of a chalcogenide glass surface DLC film with strong salt spray resistance as described in any one of claims 1-5 in infrared optical components, aerospace equipment, marine exploration equipment, or automotive infrared sensors.