Process module for performing simultaneous epitaxial deposition of material layers and semiconductor processing system thereof

Abstract

A process module configured for performing simultaneous epitaxial deposition of material layers is disclosed. The module includes a common chamber housing, wherein two chamber bodies are disposed within the common chamber housing. Each chamber body includes a ceramic weldment having an upper wall and a lower wall, an injection chamber flange and an exhaust chamber flange, and an exhaust flange having an inner sealing surface and an outer sealing surface. A cover plate forms a seal with the outer sealing surface of the exhaust flange. The module is further characterized by a pressure cylinder having a piston that exerts a compressive force between the exhaust chamber flange and the injection chamber flange. A semiconductor processing system including such a process module is also disclosed.

Description

Technical Field

[0001] This disclosure generally relates to the field of systems and apparatuses used in the manufacture of semiconductor devices and integrated circuits. More specifically, this disclosure relates to a processing module configured to perform simultaneous epitaxial deposition of material layers, a semiconductor processing system including such a processing module, and a method for performing simultaneous epitaxial deposition of material layers. Background Technology

[0002] Semiconductor processing methods such as chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) are common processes used to form thin layers of material on substrates such as silicon wafers. For example, in a CVD process, gaseous molecules of the material to be deposited are supplied to the substrate to form a thin layer of that material on the substrate through a chemical reaction. This deposited thin layer can be polycrystalline, amorphous, or epitaxial.

[0003] During a typical CVD process, one or more substrates are placed on a substrate support (e.g., a pedestal) within a chamber inside the reactor. Both the substrate and the substrate support are typically heated to a desired temperature. In a typical substrate deposition step, reactant gases pass through the heated substrate, depositing a thin layer of the desired material onto the substrate surface. If the deposited layer has the same crystal structure as the underlying silicon surface, it is called an epitaxial layer (or single crystal). These layers can be used to form semiconductor devices, such as integrated circuits, through subsequent processing.

[0004] Typically, CVD processes are performed at high temperatures to accelerate chemical reactions and produce high-quality films, with some processes (such as epitaxial silicon deposition) occurring at extremely high temperatures (e.g., above 1800°C). However, as device structures become increasingly complex with the number of deposited layers, the time required to deposit these layers also increases. This increase in deposition time affects substrate yield and reduces tooling efficiency. Therefore, chemical vapor deposition systems with increased yield and flexibility are needed.

[0005] Any discussion, including the discussion of the problems and solutions set forth in this section, is included in this disclosure only for the purpose of providing context for this disclosure and should not be construed as an admission that any or all of the discussions were known at the time of making this invention or otherwise constitute prior art. Summary of the Invention

[0006] This invention provides a simplified overview of some concepts, which will be described in further detail below. This invention is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] In one aspect, a processing module configured to perform simultaneous epitaxial deposition of a material layer, the processing module comprising: a common chamber housing; a first chamber body disposed within the common chamber housing, the first chamber body including a first ceramic weldment having a first chamber exterior and a first chamber interior, the first chamber exterior including a plurality of first external ribs extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume; and a second chamber body disposed within the common chamber housing, the second chamber body including a second ceramic weldment, the second ceramic weldment having a first external rib extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume; and a second chamber body disposed within the common chamber housing, the second chamber body including a second ceramic weldment, the second ceramic weldment having a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a plurality of first external ribs extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume; and a second chamber body disposed within the common chamber housing, the second chamber body including a second ceramic weldment, the second ceramic weldment having a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a first external rib ... exterior including a first external rib extending laterally around the first chamber exterior, the first chamber interior surrounding a first processing volume; and a second chamber body disposed within the common chamber housing, the second chamber body including a second ceramic weldment, the second ceramic weldment having a first external rib extending laterally around the first chamber exterior, the second ceramic weldment having a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a first external rib extending laterally around the first chamber exterior, the first chamber exterior including a The ceramic welded component has a second chamber exterior and a second chamber interior. The second chamber exterior includes a plurality of second external ribs extending laterally around the second chamber exterior. The second chamber interior surrounds a second processing volume. Both the first and second chamber bodies have an upper wall and a lower wall. The upper wall extends longitudinally between an injection chamber flange and a longitudinally opposing exhaust chamber flange. The lower wall is below the upper wall and parallel to it. The first and second chamber bodies are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of a central plane. The processing module may further include: an upper wall comprising an upper wall plate portion and an upper wall rib portion defining an unwelded ribbed region of the upper wall, formed from a first single quartz workpiece using a subtractive manufacturing technique to form the upper portion of the plurality of first and second external ribs. The processing module may further include: both the first and second chamber bodies having an aspect ratio between 0.7 and 0.4. The processing module may further include: wherein both the first chamber body and the second chamber body have an aspect ratio between 0.7 and 0.4. Other technical features will be apparent to those skilled in the art from the following figures, description, and claims. In one aspect, a semiconductor processing system includes a wafer transfer module comprising facets having a first lateral aperture and a second lateral aperture. The semiconductor processing system further includes a gate valve assembly coupled to the wafer transfer module, the gate valve assembly comprising a first substrate channel and a second substrate channel.The semiconductor processing system further includes a processing module coupled to the gate valve assembly. The processing module includes a common chamber housing, a first chamber body and a second chamber body disposed in the common chamber housing. The first chamber body includes a first ceramic weldment having a first chamber exterior and a first chamber interior. The first chamber exterior includes a plurality of first external ribs extending laterally around the first chamber exterior. The first chamber interior surrounds a first processing volume. The second chamber body includes a second ceramic weldment having a second chamber exterior and a second chamber interior. The second chamber exterior includes a plurality of second external ribs extending laterally around the second chamber exterior. The second chamber interior surrounds a second processing volume. Both the first chamber body and the second chamber body have an upper wall and a lower wall. The upper wall extends longitudinally between an injection chamber flange and a longitudinally opposing exhaust chamber flange. The lower wall is located below the upper wall and parallel to the upper wall. The first chamber body and the second chamber body are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of a central plane. The semiconductor processing system may further include: the upper wall comprising an upper wall plate portion and an upper wall rib portion, the upper wall plate portion and the upper wall rib portion defining an unwelded ribbed region of the upper wall, the unwelded ribbed region of the upper wall being formed from a first single quartz workpiece using a subtractive manufacturing technique and forming the upper portion of the plurality of first external ribs and the plurality of second external ribs. The semiconductor processing system may further include: wherein both the first chamber body and the second chamber body have an aspect ratio between 0.7 and 0.4. The semiconductor processing system may also include cases where the semiconductor processing system is a clustered platform. Other technical features will be apparent to those skilled in the art from the following figures, description and claims. The processing module may further include: the lower wall comprising a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed region of the lower wall, the unwelded ribbed region of the lower wall being formed from a second single quartz workpiece using a subtractive manufacturing technique and forming the lower portion of the plurality of first external ribs and the plurality of second external ribs. The processing module may further include a longitudinal coolant passage disposed between the first chamber body and the second chamber body, the longitudinal coolant passage being at least partially defined by a lateral separation distance between the first chamber body and the second chamber body. The processing module may also include: the longitudinal coolant passage extending at least partially from an injection chamber flange of the first chamber body and the second chamber body to an exhaust chamber flange. The processing module may further include: a cooling system coupled to the longitudinal coolant passage, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant passage, thereby providing at least partially temperature isolation between the first processing volume and the second processing volume.The processing module may further include: wherein the longitudinal coolant channel further includes a first longitudinal diaphragm member coupled to the first chamber body and a second longitudinal diaphragm member coupled to the second chamber body; wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of the central plane, and wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly configured to receive coolant fluid flow from the cooling system. The processing module may further include: a first upper heater array and a second upper heater array, the first upper heater array being positioned above the upper wall of the first chamber body, and the second upper heater array being positioned above the upper wall of the second chamber body, the first heater array and the second heater array being configured to independently heat the first processing volume and the second processing volume. The semiconductor processing system may further include: a lower wall comprising a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed region of the lower wall, the unwelded ribbed region of the lower wall being formed from a second single quartz workpiece using a subtractive manufacturing technique and forming the lower portion of the plurality of first external ribs and the plurality of second external ribs. The semiconductor processing system may further include a longitudinal coolant channel disposed between a first chamber body and a second chamber body, the longitudinal coolant channel being at least partially defined by a lateral separation distance between the first chamber body and the second chamber body. The semiconductor processing system may further include: the longitudinal coolant channel extending at least partially from an injection chamber flange of the first chamber body and the second chamber body to an exhaust chamber flange. The semiconductor processing system may further include a cooling system coupled to the longitudinal coolant channel, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant channel, thereby providing at least partially temperature isolation between the first processing volume and the second processing volume. The semiconductor processing system may further include: wherein the longitudinal coolant channel further includes a first longitudinal diaphragm member coupled to a first chamber body and a second longitudinal diaphragm member coupled to a second chamber body; wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of the central plane, and wherein the first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly configured to receive coolant fluid flow from the cooling system. The semiconductor processing system may further include: a first upper heater array positioned above the upper wall of the first chamber body; and a second upper heater array positioned above the upper wall of the second chamber body, the first heater array and the second heater array being configured to independently heat the first processing volume and the second processing volume.Other technical features will be obvious to those skilled in the art based on the following figures, description and claims.

[0008] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be practiced or performed in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0009] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment(s) disclosed. Attached Figure Description

[0010] To facilitate identification of any particular element or action being discussed, one or more of the most significant digits in the reference numerals refer to the drawing number in which the element was first introduced.

[0011] Embodiments of this disclosure can be more fully understood when considered in conjunction with the following illustrative drawings, and by referring to the detailed description and claims.

[0012] Figure 1 This is a schematic diagram of a semiconductor processing system including a processing module according to one or more embodiments, the processing module including two chamber bodies.

[0013] Figure 2 A semiconductor processing system with a cluster configuration according to one or more embodiments is shown, the semiconductor processing system having a processing module comprising two chamber bodies.

[0014] Figure 3 A plan view of a processing module comprising two chamber bodies according to one or more embodiments is shown.

[0015] Figure 4 A cross-sectional schematic diagram of a processing module comprising two chamber bodies according to one or more embodiments is shown.

[0016] Figure 5 An additional cross-sectional view of a processing module comprising two chamber bodies according to one or more embodiments is shown.

[0017] Figure 6 A view of a first chamber body and a second chamber body according to one embodiment is shown.

[0018] Figure 7 This is an exploded perspective view of a chamber body including ceramic weldments according to one or more embodiments.

[0019] Figure 8 A schematic diagram of a portion of a semiconductor processing system including a gas delivery system, according to one or more embodiments, is shown.

[0020] Figure 9 An additional schematic diagram is shown of a portion of a semiconductor processing system including a gas delivery system according to one or more embodiments.

[0021] Figure 10 A portion of a gas delivery system comprising a precursor source system and an etchant source system according to one or more embodiments is shown.

[0022] Figure 11 A plan view of a portion of a processing module including an exhaust assembly, according to one or more embodiments, is shown.

[0023] Figure 12 A schematic diagram of an exhaust assembly according to one or more embodiments is shown.

[0024] Figure 13 An exploded view of elements constituting part of an exhaust assembly according to one or more embodiments is shown.

[0025] Figure 14 An additional exploded view is shown of elements constituting part of an exhaust assembly according to one or more embodiments.

[0026] Figure 15 An exhaust flange according to one or more embodiments is shown.

[0027] Figure 16 A view of a processing module including a lifting mechanism for raising and lowering the lamp housing is shown.

[0028] Figure 17 An additional view of the processing module is shown, which includes a lifting mechanism for raising and lowering the lamp housing.

[0029] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0030] The following description of exemplary embodiments of the methods and compositions is merely illustrative and for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0031] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form devices, circuits, or films, or any one or more underlying materials on which devices, circuits, or films can be formed by methods according to embodiments of the present disclosure. A substrate can include a bulk material, such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or other semiconductor materials (e.g., group II-VI or group III-V semiconductor materials), and can include one or more layers overlying or underlying the bulk material. Furthermore, the substrate can include various features formed within or on at least a portion of the substrate layers, such as recesses, protrusions, etc. By way of example, a substrate can include a bulk semiconductor material and an insulating or dielectric material layer overlying at least a portion of the bulk semiconductor material. Additionally, the term "substrate" can refer to any one or more underlying materials on which devices, circuits, or films can be used or on which they can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous. A "substrate" can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes. The substrate can be made of materials such as silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. The continuous substrate may extend beyond the boundary of the processing chamber where the deposition process occurs and may move through the processing chamber, allowing the processing to continue until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate supply system that allows the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, continuous filaments, or fiber bundles (i.e., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or sheet on which a non-continuous substrate is mounted. For example, the substrate may include a semiconductor material. The semiconductor material may include or be used to form one or more of the source, drain, or channel regions of a device. The substrate may also include an interlayer dielectric (e.g., silicon oxide) and / or a high-k dielectric material layer overlaid with the semiconductor material. In this document, a high-k dielectric material is a material with a dielectric constant greater than that of silicon dioxide.

[0032] The terms "precursor" and / or precursor gas can refer to a gas or combination of gases that participate in a chemical reaction that produces another compound. For example, a precursor gas can be used to grow an epitaxial layer including silicon and germanium. Precursor gases can include one or more deposition gases, one or more dopant gases, or a combination of one or more deposition gases and one or more dopant gases. Precursor gases can include silicon precursors, such as higher-order silicon precursors. Silicon precursors can also include silanes (SiH4) or chlorosilanes (SiCl4). In some examples, higher-order silicon precursors can have one silicon atom per molecule, such as silanes. Higher-order silicon precursors can have two or more silicon atoms per molecule, such as silanes. In some examples, higher-order silicon precursors can have three or more silicon atoms. Higher-order silicon precursors can include non-halogenated higher-order silicon precursors, such as trisilanes and tetrasilanes. Higher-order silicon precursors can include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorosilanes, dichlorosilanes, trichlorosilanes, and tetrachlorosilanes. Precursor gases may include higher-order germanium-containing material layer precursors, such as germanane, digermanane, trigermanane, their chloride derivatives, and mixtures thereof. Precursor gases may include higher-order P-type doped precursors, such as diborane (B₂H₆). Precursor gases may also include higher-order N-type doped precursors, such as phosphine (PH₃) and arsine (AsH₃).

[0033] As used herein, the term “epitaxy layer” can refer to a solid single-crystal layer directly on or under a solid single-crystal substrate or layer.

[0034] As used herein, the term “chemical vapor deposition” can refer to any process in which a substrate is exposed to one or more volatile precursors / reactants (and optionally additional process gases) that react and / or decompose on the substrate surface to produce the desired deposition.

[0035] As used in this article, the term "monograph" can refer to various structural components integrated as monolithic units without easily identifiable seams and without openings to accommodate intersecting structures.

[0036] In this disclosure, any two numbers of a variable may constitute a feasible range of the variable, and any range indicated may include or exclude endpoints. Additionally, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and include equivalents, and in some embodiments may refer to mean, median, representative, majority, etc. Furthermore, in this disclosure, in some embodiments, the terms “comprising,” “consisting of,” and “having” may independently mean “generally or broadly comprising,” “including,” “substantially composed of,” or “composed of.” The meaning of any definition in this disclosure does not necessarily exclude the common and customary meanings in some embodiments. In some cases, percentages indicated herein may be relative or absolute percentages.

[0037] Numerous exemplary materials are given throughout the embodiments of this disclosure; it should be noted that the chemical formulas given for each example material should not be construed as limiting, and the non-limiting example materials given should not be limited by the given example stoichiometry.

[0038] In this specification, it will be understood that the terms "on" or "above" may be used to describe relative positional relationships. Another element, film, or layer may be directly on the mentioned layer, or another layer (intermediate layer) or element may be inserted between them, or a layer may be disposed on the mentioned layer but not completely cover the surface of the mentioned layer. Therefore, unless the term "directly" is used alone, the terms "on" or "above" will be interpreted as relative concepts. Similarly, it will be understood that the terms "below," "subject to," or "under" will be interpreted as relative concepts.

[0039] Various embodiments of this disclosure relate to a processing module including a first chamber body and a second chamber body. The processing module is configured to simultaneously epitaxially deposit material layers within the first chamber body and the second chamber body. A semiconductor processing system including such a processing module is also disclosed, as well as an epitaxial deposition method using the processing module to form epitaxial material layers.

[0040] For certain deposition techniques, the semiconductor processing systems typically employed can have a limited substrate yield through the system. This limited substrate yield can be due to a number of factors, including but not limited to the number of substrate supports per unit area occupied by the semiconductor processing system (e.g., in a clustered platform). This limitation on the number of substrate supports per unit area in the semiconductor processing system can have a specific impact on the substrate throughout the deposition process when it is performed for an extended period of time (e.g., more than 60 minutes or longer).

[0041] Some semiconductor processing systems, such as atomic layer deposition (ALD) systems, have sought to increase substrate yield by using processing modules comprising two or more metal chambers, each including a nozzle-type gas injection assembly. However, processing modules comprising multiple metal chambers may not be utilized or directly applicable to epitaxial deposition processes performed at high deposition temperatures. In such high-temperature processes, reaction chambers formed from quartz components that are transparent to heating lamps positioned above and / or below the quartz components can be used.

[0042] According to various embodiments of this disclosure, a processing module comprising two quartz components is disposed within a common housing. Such a processing module (referred to herein as a dual-chamber processing module) can increase the number of substrate supports per unit area for high-temperature epitaxial deposition processing, and thus increase the yield of substrates through a semiconductor processing system (e.g., a cluster platform) including such a dual-chamber processing module.

[0043] For purposes of explanation and illustration rather than limitation, Figure 1 and Figure 2 An exemplary semiconductor processing system including a dual-chamber processing module is illustrated. The systems and methods of this disclosure can be used for epitaxial deposition of material layers, such as epitaxial silicon-containing layers, and have increased yield and efficiency by employing a dual-chamber processing module configured to perform parallel epitaxial CVD processes. As those skilled in the art will understand in light of this disclosure, semiconductor processing systems (including dual-chamber processing modules) configured for other material layer deposition operations (e.g., atomic layer deposition, plasma-enhanced deposition, etc.) as well as semiconductor processing systems configured for processing operations other than epitaxial material layer deposition can also benefit from this disclosure.

[0044] Figure 1 A schematic diagram of a semiconductor processing system 100 including a processing module 102 is shown. The semiconductor processing system 100 further includes a gas source assembly 104, a vacuum assembly 106, and a controller 108. The gas source assembly 104 is connected to the processing module 102 via a precursor supply conduit 110 and is configured to supply a flow of processing gas 112 to the processing module 102.

[0045] Processing module 102 may include two independent chamber arrangements, a first chamber arrangement 114 and a second chamber arrangement 116. The first chamber arrangement 114 and the second chamber arrangement 116 may include isolated and discrete chamber bodies having independent and isolated internal processing volumes, at least in terms of gas communication, temperature control, and vacuum levels, as described in detail below. Processing module 102 may be configured to expose a first substrate 118 supported on a first substrate support 120 to processing gas 112. Processing module 102 may also be configured to independently expose a second substrate 122 supported on a second substrate support 124 to processing gas 112. Gas source assembly 104 may be configured to independently control the flow parameters of the processing gas 112 above the first substrate 118 and the second substrate 122. In some embodiments, the first substrate 118 and the second substrate 122 are exposed to a process gas 112 under selected environmental conditions (e.g., temperature, pressure, etc.) to allow epitaxial material layers 126a and 126b to be deposited independently on the first substrate 118 and the second substrate 122.

[0046] In some embodiments, process gas 112 may be supplied to processing module 102 by gas source assembly 104 and may include one or more silicon-containing precursors. Examples of suitable silicon-containing precursors include non-halogenated silicon-containing material layer precursors, such as silane (SiH4) and disilane (Si2H6), and halide-containing silicon-containing material layer precursors, such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). According to some examples, process gas 112 may include alloying components, such as germanium-containing material layer precursors (such as germanane (GeH4)), gallium-containing material layer precursors (such as triethylgallium Ga(C2H5)3), or indium-containing material layer precursors (such as trimethylindium ((CH3)3In)). It is contemplated that, in some examples, process gas 112 may include one or more doped material layer precursors. Examples of suitable doped material layer precursors include p-type dopants such as boron (B) and arsenic (As) and n-type dopants such as phosphorus (P) and antimony (Sb). It is conceivable that, according to certain examples, the process gas 112 may co-flow with a dilution / carrier gas such as hydrogen (H2) or nitrogen (N2) and / or with an etchant such as hydrochloric acid (HCl) or chlorine (Cl2).

[0047] Vacuum assembly 106 is connected to processing module 102 via exhaust duct 132, which is fluidly coupled to the external environment outside semiconductor processing system 100 (e.g., via vacuum pump 130 and / or elimination equipment, such as a scrubber). Vacuum assembly 106 (together with processing module exhaust assembly) is configured to independently deliver streams of residual precursors / reactants and / or any reaction byproducts from first chamber arrangement 114 and second chamber arrangement 116 to the external environment.

[0048] It is conceivable that controller 108 may be operatively connected to one or more of the gas source assembly 104, processing module 102, and vacuum assembly 106 to control the deposition of material layers (e.g., 126a and 126b) on substrates 118 and 122. In this regard, controller 108 may be connected to one or more of the gas source assembly 104, processing module 102, and vacuum assembly 106 via a wired or wireless link 128 to at least control the temperature of the substrates (118, 122), the pressure within the first chamber arrangement 114 and the second chamber arrangement 116, and the flow rate of processing gas 112 to the first chamber arrangement 114 and the second chamber arrangement 116. For example, the temperature of the substrates (118, 122) may be controlled using heater elements and / or temperature sensors included in processing module 102 and operatively associated with and / or communicating with controller 108. The pressure within the first chamber arrangement 114 and the second chamber arrangement 116 may be controlled using a vacuum pump 130 fluidly communicated with processing module 102 via an exhaust duct 132.

[0049] Figure 2 Another exemplary semiconductor processing system 200 is shown. The semiconductor processing system 200 includes a cluster platform 202, which includes two or more processing modules, including at least one processing module 102 according to one or more embodiments.

[0050] More specifically, the semiconductor processing system 200 includes an exemplary processing module 102, a back-end transfer module 204, and a gate valve assembly 206. The processing module 102 is coupled to the back-end transfer module 204 via the gate valve assembly 206. The semiconductor processing system 200 also includes a device front-end module 208, a controller 108, and a vacuum assembly 106.

[0051] exist Figure 2 In the example shown, the semiconductor processing system 200 includes four (4) processing modules, one or more of which include a dual-chamber processing module. In some examples, processing module 102 includes a first chamber arrangement 114 and a second chamber arrangement 116, the first chamber arrangement 114 including a first chamber body (not shown) and the second chamber arrangement 116 including a second chamber body (not shown). The first chamber body and the second chamber body are described in detail below. Each chamber arrangement 114 and 116 of processing module 102 includes a heater configured to independently heat a first substrate 118 and a second substrate 122, as described in detail below. In some examples, the first chamber arrangement 114 and the second chamber arrangement 116 may be configured to perform parallel deposition processes. In some embodiments, the deposition processes may be performed simultaneously within the first chamber arrangement 114 and the second chamber arrangement 116. In some embodiments, the deposition processes may be performed synchronously within the first chamber arrangement 114 and the second chamber arrangement 116.

[0052] In other examples, in addition to one or more dual-chamber processing modules, the clustered platform 202 may also include one or more single-chamber processing modules and / or one or more four-chamber modules having a four (4) chamber arrangement. For example, each processing module may be configured to deposit an epitaxial material layer. Figure 2 The processing module 102 can be configured to deposit an epitaxial layer onto a first substrate 118 and a second substrate 122 using chemical vapor deposition (CVD) technology. In some examples, the first chamber arrangement 114 and the second chamber arrangement 116 may include chambers isolated and discrete in terms of gas communication therebetween. The first chamber arrangement 114 and the second chamber arrangement 116 can be configured to perform parallel deposition processes. In some embodiments, the deposition processes may be performed simultaneously within the first chamber arrangement 114 and the second chamber arrangement 116. In some embodiments, the deposition processes may be performed synchronously within the first chamber arrangement 114 and the second chamber arrangement 116.

[0053] Process gas source 210 is fluidly coupled to the first chamber arrangement 114 and the second chamber arrangement 116 (e.g., via gas source assembly 104) and configured to independently supply process gas to the chamber arrangements and their associated chamber bodies. Gate valve assembly 206 couples processing module 102 to back-end transfer module 204 and is configured to provide selective communication between processing module 102 and back-end transfer module 204. In this regard, gate valve assembly 206 is contemplated to allow substrate transfer between back-end transfer module 204 and processing module 102 before and after epitaxial material layer deposition onto the substrate (e.g., 118 and 122).

[0054] According to some examples, gate valve assembly 206 may include a first processing module gate valve, and processing module 102 may include a second processing module gate valve that also connects processing module 102 to back-end delivery module 204. It is contemplated that, in some examples, processing gas source 210 may include reactants or precursors suitable for depositing material layers, such as using CVD deposition techniques (or ALD and / or etching processes, etc.). It is also contemplated that, according to some examples, one or more processing modules of semiconductor processing system 200 may include a plasma unit configured to provide reactants as a suitable plasma to a substrate. In this regard, one or more processing modules of semiconductor processing system 200 may be configured to deposit material layers onto a substrate using, for example, PEALD or PECVD techniques.

[0055] The back-end transfer module 204 includes a back-end chamber body 218 and a back-end substrate transfer robot 220. The back-end chamber body 218 is arranged along a transfer axis 248. It is conceivable that the back-end substrate transfer robot 220 is arranged inside and supported within the back-end chamber body 218 to move relative to the back-end chamber body 218, thereby transferring substrates (e.g., first substrate 118 and second substrate 122) between the gate valve assembly 206 and the processing module 102. In some examples, the back-end chamber body 218 may have a polygonal shape. In this respect, the back-end chamber body 218 may have five sides, fewer than five sides (e.g., a rectangular or square shape), or more than five sides (e.g., a hexagonal shape), and may have a regular polygonal or irregular polygonal shape.

[0056] The device front-end module 208 is coupled to a loading locking arrangement 228 and includes a housing 222, a front-end substrate transfer robot 224, and one or more loading ports 226. The housing 222 houses the front-end substrate transfer robot 224. The front-end substrate transfer robot 224 is located within the housing 222 and is movable relative to the housing 222 to transfer substrates between the one or more loading ports 226 and the loading locking arrangement 228. The one or more loading ports 226 are connected to the housing 222 and are configured to house a chamber 230 containing one or more substrates before and after material layers are deposited onto the substrate. In some examples, the chamber 230 may include a standard mechanical interface chamber. According to some examples, the chamber 230 may include a front-opening unified chamber. Although shown and described herein with three (3) loading ports, it should be understood and recognized that the device front-end module 208 may include fewer or additional loading ports and remain within the scope of this disclosure.

[0057] Controller 108 is operatively connected to semiconductor processing system 200 and includes device interface 232, processor 234, user interface 236, and memory 238. Device interface 232 connects processor 234 to semiconductor processing system 200, for example, via (or a) wired or wireless link 240. Processor 234 is operatively connected to user interface 236 and configured to communicate with memory 238. Memory 238 includes a non-transitory machine-readable medium having a plurality of program modules 242 recorded thereon, the program modules 242 containing instructions that, when read by processor 234, cause processor to perform certain operations. These operations include operations of material layer deposition methods, as described below.

[0058] As previously stated, semiconductor processing systems 100 and 200 (respectively...) Figure 1 and Figure 2 The device includes one or more dual-chamber processing modules, each comprising an independently controllable first chamber arrangement and a second chamber arrangement, each chamber arrangement including an associated chamber body, namely a first chamber body and a second chamber body. (Reference) Figures 3 to 7 An exemplary dual-chamber processing module of this disclosure is shown and described in more detail. For example, Figure 3 A plan view of the dual-chamber processing module is shown. Figure 4 It shows the passage through plane 304 (e.g.) Figure 3 A cross-sectional view of the dual-chamber processing module (shown). Figure 5 It shows the passage through plane 306 (e.g.) Figure 3 The cross-sectional view shown is shown in the figure.

[0059] In various embodiments, a processing module 102 is disclosed. Processing module 102 ( Figure 3 and Figure 4 The system includes a first chamber body 308 and a second chamber body 310, and may be referred to as a dual-chamber processing module. In some embodiments, the processing module 102 may be configured to perform epitaxial deposition of a material layer. In some examples, the processing module 102 may be configured to perform epitaxial deposition of a silicon-containing layer. In some examples, the processing module 102 may be configured to perform dual epitaxial deposition of a silicon-containing layer simultaneously or synchronously within the first chamber body 308 and the second chamber body, thereby increasing the yield of the semiconductor processing system (e.g., 100 or 200) including the dual-chamber processing module 302.

[0060] like Figure 3 , Figure 4 and Figure 5 As shown, the processing module 102 includes a common chamber housing 312. The common chamber housing 312 has a central plane 314 that divides the common chamber housing 312 into two parts. In some embodiments, the common chamber housing 312 may include a sleeve housing with one or more housing sidewalls 320 that allow unobstructed transmission of radiation from one or more heater arrays, as described below.

[0061] In various embodiments, a first chamber body 308 and a second chamber body 310 are disposed within a common chamber housing 312. In some examples, the first chamber body 308 is positioned in the common chamber housing 312 on a first side (e.g., the left side) of the central plane 314, and the second chamber body 310 is positioned within the common chamber housing 312 on a second side (e.g., the right side) of the central plane 314. Figure 3 and Figure 4 In some examples, the first chamber body 308 and the second chamber body 310 are mirror images of each other about the central plane 314. In such examples, the first chamber body 308 and the second chamber body 310 are laterally positioned adjacent to each other on either side of the central plane 314.

[0062] Heating and cooling arrangement

[0063] In various embodiments, the first chamber body 308 includes an interior comprising a first processing volume 402, and the second chamber body 310 includes an interior comprising a second processing volume 404, such as... Figure 4As shown. A first processing volume 402 surrounds a first substrate 118 supported on a first substrate support 120, and a second processing volume surrounds a second substrate 122 supported on a second substrate support 124. In various embodiments, the first processing volume 402 and the second processing volume 404 can be independently controlled (e.g., in terms of temperature, processing, and inlet gas flow) to enable independent deposition processes to be performed simultaneously on the first substrate 118 and the second substrate 122. For example, at least the temperature, inlet flow rate, and pressure of the processing gas within the first processing volume 402 and the second processing volume 404 can be independently controlled to enable autonomous deposition processes to be performed simultaneously within the first chamber body and the second chamber body.

[0064] Independent temperature control of the first processing volume 402 and the second processing volume 404 can be achieved by various aspects of this disclosure. In one aspect, independent temperature control between the first processing volume 402 and the second processing volume 404 can be achieved at least in part by utilizing independent heater arrays for the first chamber body 308 and the second chamber body 310.

[0065] More in detail, Figure 4 and Figure 5 Aspects of independent heater arrays for the first chamber body 308 and the second chamber body 310 are shown, which in turn allow for independent temperature control of the first processing volume 402 and the second processing volume 404, at least in part.

[0066] Reference Figure 4The processing module 102 includes a first upper heater array 406, which is positioned above the first upper wall 430 of the first chamber body 308 and includes a first lamp housing 408, in which a first plurality of lamps 414 are disposed. Furthermore, the processing module 102 includes a second upper heater array 410, which is positioned above the second upper wall 432 of the second chamber body 310 and includes a second lamp housing 412, in which a second plurality of lamps 416 are disposed. In some embodiments, each of the first plurality of lamps 414 and each of the second plurality of lamps 416 may be positioned to extend laterally through and above the first upper wall 430 of the first chamber body 308 and the second chamber body 310, respectively. In some embodiments, the first plurality of lamps 414 and the second plurality of lamps 416 are longitudinally spaced above the first upper wall 430 of the first chamber body 308 and the second chamber body 310, so that the first substrate 118 and the second substrate 122, respectively disposed within the first processing volume 402 and the second processing volume 404, can be uniformly heated. As used herein, the longitudinal axis of the chamber body (308 or 310) may refer to an extension / direction parallel or substantially parallel to the central plane 314, while the transverse axis of the chamber body may refer to an extension / direction perpendicular or substantially perpendicular to the central plane 314.

[0067] In another aspect, the processing module 102 may include a first lower heater array 418, which is positioned below the first lower wall 434 of the first chamber body 308 and includes a third lamp housing 420, in which a plurality of third lamps 426 are arranged. In another aspect, the processing module 102 may include a second lower heater array 422, which is positioned below the second lower wall 436 of the second chamber body 310 and includes a fourth lamp housing 424, in which a plurality of fourth lamps 428 are arranged.

[0068] In some embodiments, each of the plurality of third lights 426 and each of the plurality of fourth lights 428 may be positioned to extend longitudinally through and above the first upper wall and the second upper wall of the first chamber body 308 and the second chamber body 310, respectively. In some embodiments, the plurality of third lights 426 and the plurality of fourth lights 428 are longitudinally spaced below the first lower wall and the second lower wall of the first chamber body 308 and the second chamber body 310.

[0069] The above-mentioned various heater arrays (i.e., Figure 4 Models 406, 410, 418, and 422 can be controlled independently (e.g., via a controller, such as...). Figure 2 The controller 244 is used to at least partially achieve autonomous temperature control of the first processing volume 402 and the second processing volume 404.

[0070] In another aspect, independent temperature control between the first processing volume 402 and the second processing volume can be achieved at least in part by utilizing a cooling system to provide a coolant fluid flow between the first chamber body 308 and the second chamber body 310, thereby providing at least in part temperature isolation between the first chamber body 308 and the second chamber body 310 and their associated internal processing volumes.

[0071] More details and references Figure 3 and Figure 4 The first chamber body 308 and the second chamber body 310 may be laterally separated by a longitudinal coolant channel 322. In some embodiments, the longitudinal coolant channel 322 is at least partially defined by a channel formed by a separation between a portion of the first chamber exterior 324 near the central plane 314 and a portion of the second chamber exterior 332 near the central plane 314. In some embodiments, the longitudinal coolant channel 322 is at least partially defined by a channel formed by a gap between the outer surfaces of the first chamber body and the second chamber body near the central plane 314. In some examples, the longitudinal coolant channel 322 may extend longitudinally between the front chamber flanges (336, 338) and the exhaust chamber flanges (340, 342) of the first chamber body 308 and the second chamber body 310. As a non-limiting example, Figure 3 A longitudinal coolant passage 322 is shown extending longitudinally between a first injection chamber flange 336 of the first chamber body 308 and a first exhaust chamber flange 340 of the first chamber body 308 and the second chamber body 310.

[0072] In some embodiments, the longitudinal coolant passage 322 may be defined (or further defined) by one or more diaphragm members configured to allow coolant fluid to flow through the one or more diaphragm members to further independently control the temperature of the first processing volume 402 and the second processing volume 404. In exemplary embodiments, and further reference... Figure 3 and Figure 4 The processing module 102 may also include a first longitudinal diaphragm member 326 and a second longitudinal diaphragm member 328. In such an example, the first longitudinal diaphragm member 326 and the second longitudinal diaphragm member 328 may extend longitudinally between the first and second injection chamber flanges (336, 338) and the first and second exhaust chamber flanges (340, 342) of the first and second chamber bodies (308, 310).

[0073] In various embodiments, longitudinal coolant channels and / or longitudinal diaphragm members may be coupled to a cooling system configured to provide a coolant fluid flow into and through the longitudinal coolant channels. As a non-limiting example, processing module 102 (such as...) Figure 3 and Figure 4 The system (shown) may include a cooling system 344 configured to provide a coolant fluid flow (as shown by coolant fluid flow 346) through a longitudinal coolant passage 322 and / or a first longitudinal diaphragm member 326 and a second longitudinal diaphragm member 328. In some examples, the cooling system 344 may be located near the exhaust chamber flanges (340, 342) and between the first chamber body 308 and the second chamber body 310. In such examples, the cooling system 344 may be configured to longitudinally guide the coolant fluid flow 346 along the longitudinal coolant passage 322 in a flow direction toward the injection chamber flanges (336, 338) of the first chamber body 308 and the second chamber body 310. In various embodiments, the cooling system 344 may include a blower arrangement (or multiple blower arrangements) configured to provide a temperature-controlled (e.g., cooling) airflow longitudinally through the longitudinal coolant passage 322.

[0074] In various embodiments, the first chamber body and the second chamber body of the dual-chamber processing module of this disclosure include ceramic weldments that include a single quartz assembly configured to be housed in a common housing, and each chamber body is further configured to be coupled to an injection flange and an exhaust flange.

[0075] For example, Figure 5 This illustrates the process via processing module 102 (such as...) Figure 3 The diagram shows a cross-sectional view of plane 306 (shown below), and illustrates the elements of the first chamber body 308 housed in the common chamber housing 312, as well as the various components and parts of the processing module 102 and their arrangement around the first chamber body, as described in detail below. Although the following detailed description focuses on the first chamber body, it should be understood that the same applies to the second chamber body.

[0076] In various embodiments, processing module 102 includes a first chamber body 308, which includes a first upper wall 430 and a first lower wall 434. The first upper wall 430 extends longitudinally between a first injection chamber flange 336 (e.g., injection end 352) and a longitudinally opposed first exhaust chamber flange 340 (e.g., exhaust end 358). The first lower wall 434 is below the first upper wall 430 and parallel to the first upper wall 430. The first chamber body has a plurality of first external ribs 330 extending laterally around the first chamber exterior of the first chamber body, the plurality of first external ribs 330 being longitudinally spaced apart from each other between the first injection chamber flange 336 and the longitudinally opposed first exhaust chamber flange 340. In some examples, the plurality of external ribs includes upper wall rib portions and lower rib portions, as described in more detail below.

[0077] In various embodiments, processing module 102 ( Figure 5 The first injection flange 354 and the first exhaust flange 360 ​​are configured to be connected to the first injection chamber flange 336 of the first chamber body 308, and the first exhaust flange 360 ​​is configured to be connected to the first exhaust chamber flange 340 of the first chamber body 308.

[0078] Figure 6 A view of the first chamber body and the second chamber body is shown, in which all additional parts and components of the processing module have been removed.

[0079] In various embodiments, the chamber bodies (308 and / or 310) may have the same geometry. As used herein, the term "identical" should be understood to include the percentage of geometric variation due to defects in the manufacturing process used to construct the chamber body. In such embodiments, the longitudinal length (L) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310. Furthermore, the lateral width (W) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310. Additionally, the height (H) of the chamber body may be the same for the first chamber body 308 and the second chamber body 310.

[0080] In some examples, the first chamber body 308 and the second chamber body 310 have a length (L) to width (W) ratio between 1.0 and 0.2, between 0.8 and 0.3, between 0.7 and 0.4, or between 0.6 and 0.5. In some examples, the first chamber body 308 and the second chamber body 310 have a length (L) to width (W) ratio less than 1.0, less than 0.8, less than 0.7, less than 0.6, less than 0.5, less than 0.4, less than 0.3, or less than 0.2.

[0081] In other examples, the processing module of this disclosure may include chamber bodies (e.g., 308 and / or 310) having different geometries from each other.

[0082] In various embodiments, the first chamber body and the second chamber body of the processing module of this disclosure may include ceramic weldments. In such examples, the first chamber body and the second chamber body may include various structural components integrated as a single unit. In some examples, the ceramic weldment includes a single element formed from a single ceramic workpiece.

[0083] Figure 7 The illustration depicts structural elements of an exemplary chamber body (e.g., a first chamber body 308 or a second chamber body 310) including a ceramic weldment 700. Figure 7 As shown, the ceramic weldment 700 is shown assembled in a disassembled form.

[0084] In various embodiments, the ceramic weldment 700 includes an upper wall 706. The upper wall 706 includes a single ceramic workpiece 708 formed using a subtractive manufacturing technique. The upper wall 706 includes an upper wall plate portion 710 and an upper wall rib portion 712, which are defined by removing material from the first single ceramic workpiece.

[0085] like Figure 7 As shown, the first sidewall 714 is connected to the upper wall 706 (as indicated by arrow B). Similarly, the second sidewall 716 is connected to the upper wall 706 (as indicated by arrow C). In some examples, the first sidewall 714 and the second sidewall 716 are connected to the inner surface 718 of the upper wall at a location near the longitudinal edge of the upper wall panel portion 710. The first sidewall 714 and the second sidewall 716 can be welded to the upper wall 706.

[0086] In various embodiments, the ceramic weldment 700 includes an injection chamber flange 720. The injection chamber flange 720 can be coupled to an upper wall 706 (and a first sidewall 714 and a second sidewall 716), as indicated by arrow D. The injection chamber flange 720 can be coupled to the upper wall 706 (and a first sidewall 714 and a second sidewall 716) at an injection end 352 (as indicated by arrow D). Figure 6 (As shown).

[0087] In various embodiments, the ceramic weldment 700 includes an exhaust chamber flange 722. The exhaust chamber flange 722 can be coupled to the upper wall 706 (and the first sidewall 714 and the second sidewall 716), as shown by arrow E. The exhaust chamber flange 722 can be coupled to the upper wall 706 (and the first sidewall 714 and the second sidewall 716) at the exhaust end 358 (as shown by arrow E). Figure 6 (As shown).

[0088] In various embodiments, the ceramic weldment 700 includes a lower wall 726. The lower wall may be coupled to one or more of a first sidewall 714, a second sidewall 716, an injection chamber flange 720, and an exhaust chamber flange 722, as indicated by arrows F and G. Advantageously, the aforementioned dimensional stability (e.g., resistance to deformation associated with localized heating) provided by the subtractive manufacturing technique used to form the upper wall 706 can simplify the formation of the weld connecting the lower wall 726, for example, limiting (or eliminating) the need to remove natural material to achieve registration and / or fill gaps associated with dimensional changes.

[0089] In one aspect, the lower wall 726 comprises a single ceramic workpiece formed using a subtractive manufacturing technique, similar to the upper wall 706. In such an example, the lower wall includes a lower wall plate portion and a lower wall rib portion, which have been defined by removing material from the second single ceramic workpiece.

[0090] On the other hand, the lower wall 726 includes a non-single ceramic workpiece and may include a lower wall plate 728 and a plurality of lower wall ribs 730. In some examples, the lower wall plate 728 may be coupled to one or more of the first sidewall 714, the second sidewall 716, the injection chamber flange 720, and the exhaust chamber flange 722, as indicated by arrows F and G, and subsequently, the plurality of lower wall ribs 730 may be coupled to the lower surface of the lower wall plate 728, as indicated by arrows H and I. The plurality of lower wall ribs 730 may be sequentially aligned to the lower wall plate 728. Alignment may be completed at a location below the upper wall rib portion 712 of the upper wall 706, which serves as a template to inform the manufacturer where any of the plurality of lower wall ribs 730 should be positioned prior to welding.

[0091] As those skilled in the art will understand from this disclosure, due to the aforementioned lateral stiffness of the upper wall 706, using the upper wall 706 as a pass / fail gauge can further limit the variation of the predetermined position within the ceramic weldment 700 relative to each lower wall rib segment 730, thereby also increasing the yield of the manufacturing process used to manufacture the ceramic weldment 700.

[0092] In various embodiments, the channel 732 may be defined within the lower wall 726. In one aspect, drilling may be performed at a location between two (2) longitudinally adjacent upper and lower wall ribs 730, as indicated by arrow J. In another aspect, the channel 732 may be defined within the lower wall 726 as part of a subtractive manufacturing process for forming the lower wall 726.

[0093] In view of this disclosure, those skilled in the art will understand that the subtractive manufacturing process used to form the lower wall 726 can simplify the formation of the channel 732 and the connection of the tube 738 (or both), due to the single, monolithic structure of the upper wall 706 giving the upper wall 706 rigidity, and the dimensional stability due to the absence of welding between at least a plurality of upper and lower wall ribs 730 and the upper wall plate portion 710 of the lower wall 726.

[0094] Various embodiments of this disclosure relate to the delivery of process gas to a processing module comprising a first chamber body and a second chamber body. The complexity and cost of apparatuses and systems for delivering independent streams of process gas to a dual-chamber processing module having two chamber bodies can be significant. Therefore, one or more embodiments provide an apparatus for simplifying the delivery of process gas to a processing module having two chamber bodies.

[0095] As a non-limiting example, a gas delivery system for a dual-chamber processing module may include separate flow controllers and gas delivery lines for supplying processing gases to all sources in the first and second chamber bodies. In such an example, the complexity and cost of the system increase exponentially, while also making the manufacturing and repair of the system more complex. Therefore, the various embodiments provided employ shared flow controllers and shared gas delivery lines for certain gas sources, thereby significantly reducing the complexity and cost of the semiconductor processing system.

[0096] Figure 8 A schematic diagram of a portion of a semiconductor processing system 800 according to one or more embodiments is shown. The semiconductor processing system 800 includes a gas delivery system 802, which includes a first gas source 806, a second gas source 808, and an auxiliary gas source 810. Figure 8 As shown, a first gas source 806 is fluidly connected to a first chamber body 308 via a first gas distribution assembly 828, and a second gas source 808 is fluidly connected to a second chamber body 310 via a second gas distribution assembly 830. In contrast, an additional gas source 810 is fluidly connected to both the first chamber body 308 and the second chamber body 310 (via an associated gas distribution assembly) using a gas manifold 816. The gas manifold 816 receives additional gas supplied from the additional gas source 810 (via an inlet conduit 818) and distributes the additional gas to both the first chamber body 308 (via a first outlet conduit 820) and the second chamber body 310 (via a second outlet conduit 822). In such an example, the source of the additional gas 810 includes a common (e.g., shared) gas conduit to provide additional gas to both the first chamber body 308 and the second chamber body 310, thereby reducing the complexity of the gas delivery system.

[0097] In various embodiments, a first gas conduit 812 is fluidly coupled to a first gas source 806 and a first chamber body 308 (via a first gas distribution assembly 828 and a first injection flange assembly 832). A second gas conduit is fluidly coupled to a second gas source 808 and a second chamber body 310 (via a second gas distribution assembly 830 and a second injection flange assembly 834). A gas manifold 816 includes an inlet conduit 818 for receiving incoming additional gas supplied from an additional gas source 810. The gas manifold 816 includes a first outlet conduit 820 and a second outlet conduit 822, which redistribute the additional gas supplied from the additional gas source 810. The first outlet conduit 820 of the gas manifold 816 is fluidly coupled to the inlet conduit 818 and the first chamber body (via the first gas distribution assembly 828) and supplies additional gas to the first chamber body 308. The second output conduit 822 of the gas manifold 816 is fluidly connected to the input conduit 818 and the second chamber body 310 (via the second gas distribution assembly 830) and supplies additional gas to the second chamber body 310.

[0098] In various embodiments, a first flow controller 824 is coupled to a first output conduit 820 and configured to control the flow rate of additional gas to the first chamber body 308. A second flow controller is coupled to a second output conduit 822 and configured to control the flow rate of additional gas to the second chamber body 310.

[0099] As briefly stated above, the semiconductor processing system 800 includes a first gas distribution assembly 828 and a second gas distribution assembly 830.

[0100] Both the first gas distribution assembly 828 and the second gas distribution assembly 830 can include multiple gas lines (such as...). Figure 8 As shown), each of the multiple gas lines has an associated flow controller ( Figure 8 (Not shown in the image). In some examples, the first gas distribution assembly 828 and the second gas distribution assembly 830 may include a manifold assembly 836. The manifold assembly 836 may be configured to redistribute gas supplied from the first gas source 806, the second gas source 808, and additional gas supplied from the auxiliary gas source 810 among multiple gas lines of the gas distribution assemblies (828 / 830).

[0101] The first gas distribution assembly 828 is fluidly coupled to the gas delivery system 802. Additionally, the first gas distribution assembly 828 is fluidly coupled to the first chamber body 308 (via the first injection flange assembly 832). In some embodiments, the first gas distribution assembly 828 is located within the semiconductor processing system 800, upstream of the first chamber body 308 and downstream of the gas delivery system 802.

[0102] The second gas distribution assembly 830 is fluidly coupled to the gas delivery system 802. Additionally, the second gas distribution assembly 830 is fluidly coupled to the second chamber body 310 (via the second injection flange assembly 834). In some embodiments, the second gas distribution assembly 830 is positioned within the semiconductor processing system 800, upstream of the second chamber body 310 and downstream of the gas delivery system 802.

[0103] As briefly stated above, the semiconductor processing system 800 includes a first injection flange assembly 832 and a second injection flange assembly 834. The first injection flange assembly 832 is configured and arranged to inject gas supplied from a first gas distribution assembly 828 into the interior of a first chamber body 308. The second injection flange assembly 834 is configured and arranged to inject gas supplied from a second gas distribution assembly 830 into the interior of a second chamber body 310.

[0104] In various embodiments, the first injection flange assembly 832 is mechanically coupled to the first chamber body 308 and fluidly coupled to the first gas distribution assembly 828. Similarly, in various embodiments, the second injection flange assembly 834 is mechanically coupled to the second chamber body 310 and fluidly coupled to the second gas distribution assembly 830.

[0105] The first injection flange assembly 832 may include a plurality of internal flow channels (not shown), each of the plurality of internal flow channels having an input fluidly connected to one of a plurality of gas lines fluidly connected to the first gas distribution assembly 828 and an output fluidly connected to the interior of the first chamber body 308, thereby enabling controlled distribution and injection of gas into the first processing volume 402. Figure 4 )middle.

[0106] Similarly, the second injection flange assembly 834 may include a plurality of internal flow channels (not shown), each of the plurality of internal flow channels having an input fluidly connected to one of a plurality of gas lines fluidly connected to the second gas distribution assembly 830 and an output fluidly in communication with the interior of the second chamber body 310, thereby enabling controlled distribution of gas into the second processing volume 404. Figure 4 )middle.

[0107] Figure 9 A schematic diagram of a portion of a semiconductor processing system 900 according to one or more embodiments is shown. The semiconductor processing system 900 is similar to the semiconductor processing system 800, and elements common to both will be briefly described below.

[0108] The semiconductor processing system 900 includes a first gas distribution assembly 828 and a second gas distribution assembly 830, which are respectively fluidly coupled to a first chamber body and a second chamber body, as previously described for... Figure 8The semiconductor processing system 800 is described.

[0109] In various embodiments, the gas delivery system 902 includes a precursor source system 904 and an etchant source system 906. The precursor source system 904 includes multiple gas sources, including a first precursor source 908, a second precursor source 910, and a first auxiliary source 912. The etchant source system 906 includes multiple gas sources, including a first etchant source 914, a second etchant source 916, and a second auxiliary source 918. In various embodiments, the precursor source system 904 and / or the second auxiliary source 918 may each supply gas in a single gas form to a first gas distribution assembly 828 and a second gas distribution assembly 830 (and to the associated first chamber body 308 and second chamber body), and to a gas mixture (i.e., including two or more different gases) to the first gas distribution assembly 828 and the second gas distribution assembly 830 (and to the associated first chamber body 308 and second chamber body). The supply of a single gas can be utilized when the epitaxial deposition process performed in the semiconductor processing system 900 is sensitive to variations in the flow rate of that particular gas. Accordingly, when the epitaxial deposition process performed in the semiconductor processing system 900 is less sensitive to changes in the flow of the gases constituting the gas mixture, the supply of the gas mixture can be utilized.

[0110] In various embodiments, the first precursor source 908 and the second precursor source 910 contain and supply a common compound, i.e., the precursor gas supplied from the first precursor source 908 and the second precursor source 910 is the same. In some embodiments, the first precursor source 908 contains and supplies a single precursor gas (i.e., not a gas mixture), and the second precursor source 910 contains and supplies the same single precursor gas (i.e., not a mixture).

[0111] In various embodiments, the first etchant source 914 and the second etchant source 916 contain and supply a common chemical etchant, i.e., the etchant gas supplied from the first etchant source 914 and the second etchant source 916 is the same. In some embodiments, the first etchant source 914 contains and supplies a single etchant gas (i.e., not a gas mixture), and the second etchant source 916 contains and supplies the same single etchant gas (i.e., not a mixture).

[0112] In various embodiments, the first additional source 912 of the precursor source system 904 and the second additional source 918 of the etchant source system 906 both include two or more gas sources, such as Figure 9 As shown.

[0113] In some examples, two or more gas outputs of the first additional source 912 are coupled to the gas inputs of a mixing manifold 936a, which is configured to mix the incoming gases. The number of gas inputs to the mixing manifold 936a corresponds to the number of gas sources employed in the first additional source 912. As a non-limiting example, Figure 9 The first additional source 912 includes four (4) gas sources having four (4) gas outputs, and the mixing manifold 936a includes four (4) corresponding gas inputs for receiving and mixing gases supplied from each of the four (4) gas sources of the first additional source 912. The mixing manifold 936a mixes the incoming gases and includes a single gas output for supplying the first additional gas, comprising the gas mixture, to downstream components of the gas delivery system 902.

[0114] Similarly, in some examples, two or more gas outputs of the second additional source 918 are coupled to the gas inputs of a mixing manifold 936b, which is configured to mix the incoming gases. The number of gas inputs to the mixing manifold 936b corresponds to the number of gas sources employed in the second additional source 918. As a non-limiting example, Figure 9 The second additional source 918 includes four (4) gas sources having four (4) gas outputs, and the mixing manifold 936b includes four (4) corresponding gas inputs for receiving and mixing gases supplied from each of the four (4) gas sources of the second additional source 918. The mixing manifold 936b mixes the incoming gases and includes a single gas output for supplying the second additional gas, comprising the gas mixture, to downstream components of the gas delivery system 902.

[0115] The gas delivery system 902 includes a first precursor inlet conduit 928 and a first etchant inlet conduit 932, which are fluidly connected to a first gas distribution assembly 828. The first precursor inlet conduit 928 is fluidly connected to a first precursor source 908 and a first auxiliary source 912 via a first manifold 924 and a first flow controller 824. The first etchant inlet conduit 932 is fluidly connected to a first etchant source 914 and a second auxiliary source 918 via a second manifold 926 and a second flow controller 826.

[0116] The gas delivery system 902 includes a second precursor inlet conduit 930 and a second etchant inlet conduit 934, which are fluidly connected to a second gas distribution assembly 830. The second precursor inlet conduit 930 is fluidly connected to a second precursor source 910 and a first auxiliary source 912 via a first manifold 924 and a third flow controller 920. The second etchant inlet conduit 934 is fluidly connected to a second etchant source 916 and a second auxiliary source 918 via a second manifold 926 and a fourth flow controller 922.

[0117] In some embodiments, the first precursor source 908 and the second precursor source 910 contain and supply a precursor gas having a compound comprising an elemental component that is an elemental compound of a chemical formula for an epitaxial deposited material layer deposited in one or both chamber bodies. In some examples, the precursor gas comprises a silicon precursor or a germanium precursor.

[0118] In some embodiments, the first etchant source 914 and the second etchant source 916 contain and supply etchant gases having a compound comprising an elemental component that is not an elemental compound of the chemical formula of an epitaxial deposited material layer deposited in one or both chamber bodies. In some examples, the etchant gas comprises a halide etchant (e.g., chlorine, hydrochloric acid, etc.).

[0119] In various embodiments, the provided semiconductor processing system can be configured for dual epitaxial deposition of a material layer comprising a compound material having a chemical formula including two or more elemental components. As a non-limiting example, the provided semiconductor processing system can be configured for dual epitaxial deposition of an epitaxial silicon-germanium layer comprising silicon and germanium components.

[0120] Figure 10 A portion of a semiconductor processing system 1000 configured for dual epitaxial deposition of a composite material layer is shown, and a portion of a gas delivery system 1002 that can be used in such a system is shown in particular.

[0121] In various embodiments, the gas delivery system 1002 includes a precursor source system 1004 and an etchant source system 1006. A first auxiliary source 912, a second auxiliary source 918, and a first etchant source 914 / second etchant source 916 are connected with... Figure 9 The gas delivery system 902 is configured similarly.

[0122] In some examples, precursor source system 1004 includes a first precursor source 908 and a second precursor source 910. The first precursor source 908 and the second precursor source 910 may be configured to supply a first precursor gas 1012. In some embodiments, the first precursor gas 1012 includes a silicon precursor. In some examples, precursor source system 1004 includes a third precursor source 1008 and a fourth precursor source 1010 configured to supply a second precursor gas 1014. In some embodiments, the second precursor gas 1014 includes a germanium precursor.

[0123] As a non-limiting example, the gas delivery system 1002 includes a first precursor source 908 and a second precursor source 910, as well as a third precursor source 1008 and a fourth precursor source 1010. The first precursor source 908 and the second precursor source 910 are configured to supply silicon precursors to a first precursor inlet conduit 928 and a second precursor inlet conduit 930 (see [link]). Figure 9The third precursor source 1008 and the fourth precursor source 1010 are configured to supply germanium precursors to the first precursor inlet conduit 928 and the second precursor inlet conduit 930, thereby enabling epitaxial deposition of silicon and / or silicon-germanium layers in the first chamber body 308 and the second chamber body. Figure 9 In some examples, the semiconductor processing system 1000, including the gas delivery system 1002, can be configured for dual epitaxial deposition of a silicon-germanium / silicon superlattice structure comprising multiple repeating layers of epitaxial silicon and epitaxial silicon-germanium. In such an example, the etchant gas 1016 (supply from a first etchant source 914 and a second etchant source 916) may comprise a halide etchant (e.g., hydrochloric acid gas).

[0124] In an additional example, the first precursor source 908 and the second precursor source 910 may be configured to supply a first precursor gas 1012. In such an example, the first precursor gas 1012 may include a silicon precursor. Additionally, the third precursor source 1008 and the fourth precursor source 1010 may be configured to supply a second precursor gas 1014 comprising a dopant gas. For example, the first precursor source 908 and the second precursor source 910 may supply a silicon precursor, while the third precursor source 1008 and the fourth precursor source 1010 may supply a p-type or n-type dopant, thereby enabling epitaxial deposition of a doped silicon layer in both the first chamber body 308 and the second chamber body 310. In such an example, the semiconductor processing system 1000 including the gas delivery system 1002 may be configured for dual epitaxial deposition of a PMOS or NMOS epitaxial layer comprising a doped epitaxial silicon layer. In such an example, the etchant gas 1016 (supply from the first etchant source 914 and the second etchant source 916) may include a halide etchant (e.g., hydrochloric acid gas).

[0125] The various embodiments provided also include an exhaust assembly configured to independently control the pressure and rate of exhaust from excess precursors and reaction byproducts from the processing module comprising the first and second chambers. In short, the provided exhaust assembly offers reduced complexity while still enabling independently operable exhaust control of the first and second chambers.

[0126] refer to Figures 11 to 15 The exhaust assembly and its components are shown. The components previously described above are briefly described, while additional components are described in more detail. As used herein with respect to surfaces, “inner” may refer to the surface facing the chamber body, and similarly, “outer” may refer to the surface away from the chamber body.

[0127] In various embodiments, processing module 1100 ( Figure 11The system includes a common chamber housing 312 and a first chamber body 308 and a second chamber body 310. The chamber bodies are disposed within the common chamber housing 312 and are laterally separated by a lateral separation distance, and are positioned adjacent to each other on either side of a central plane 314. In such an example, the first chamber body 308 includes a first ceramic weldment having a first upper wall and a first lower wall, the first upper wall extending longitudinally between a first injection chamber flange and a longitudinally opposing first exhaust chamber flange, and the first lower wall below and parallel to the first upper wall, as previously described. In such an example, the second chamber body 310 is disposed within the common chamber housing, and the second chamber body includes a second ceramic weldment, a second upper wall, and a second lower wall, the second upper wall extending longitudinally between a second injection chamber flange and a longitudinally opposing second exhaust chamber flange, and the second lower wall below and parallel to the second upper wall, as previously described.

[0128] In various embodiments and references Figure 11 and Figure 12 The first chamber body 308 includes a first exhaust chamber flange 1102, and the second chamber body 310 includes a second exhaust chamber flange 1104. The first exhaust chamber flange 1102 and the second exhaust chamber flange 1104 are integrally formed with the first chamber body 308 and the second chamber body 310, respectively. A first exhaust flange 1106 is connected to the first exhaust flange 1106, and a second exhaust flange 1108 is connected to the second exhaust chamber flange 1104. The first and second exhaust flanges can be formed of any suitable material, such as stainless steel or Hastelloy. A first cover plate 1110 is connected to the first exhaust flange 1106, and a second cover plate 1112 is connected to the second exhaust flange 1108.

[0129] Figure 13 and Figure 14 The first exhaust flange 1106 and the second exhaust flange 1108, as well as the first cover plate 1110 and the second cover plate 1112, and how they are assembled are shown in more detail. For example, Figure 13 An exploded view of the components of the exhaust assembly, viewed toward the first exhaust chamber flange 1102 of the first chamber body 308, is shown. Figure 14 An exploded view of the components of the exhaust assembly, viewed from the first exhaust chamber flange 1102 away from the first chamber body 308, is shown. In various embodiments, the first chamber body, exhaust flange, cover plate, etc., are structurally identical or substantially similar to the second chamber body, exhaust flange, cover plate, etc., and are assembled in the same or substantially similar manner as the second chamber body, exhaust flange, cover plate, etc. Therefore, the following description of the first exhaust assembly is similarly applicable to the second exhaust assembly.

[0130] In various embodiments and references Figure 13 and Figure 14The first exhaust flange 1106 includes a first inner sealing surface 1402 configured to form a seal (e.g., a vacuum seal) with the first exhaust chamber flange 1102. To form a seal between the first exhaust flange 1106 and the first inner sealing surface 1402, the first inner sealing surface 1402 includes a recess 1404 configured and arranged to receive a sealing member (e.g., an O-ring, etc.), and the first exhaust chamber flange 1102 includes a first chamber recess 1308 configured and arranged to receive a sealing member. The first cover plate 1110 includes a first plate sealing surface 1406 configured to form a seal with the first outer sealing surface 1304 of the first exhaust flange 1106. In order to form a seal between the first cover plate 1110 and the first inner sealing surface 1402, the first plate sealing surface 1406 includes a first cover recess 1408 configured and arranged to receive a sealing member, and the first outer sealing surface 1304 includes an outer recess 1306 configured and arranged to receive a sealing member.

[0131] In various embodiments, the connection and sealing (i.e., vacuum sealing) between the first exhaust chamber flange 1102 and the first exhaust flange 1106, and between the second exhaust chamber flange 1104 and the second exhaust flange 1108, are achieved by employing a series of pressure cylinders.

[0132] In some embodiments, to maintain the necessary compressive force between the first exhaust flange 1106 and the first chamber body 308, the processing module 1100 is equipped with a first pressure cylinder 1114 and a second pressure cylinder 1116. These cylinders are connected to the common chamber housing 312 and include a first piston 1122 and a second piston 1124, respectively. These pistons are coupled to the first exhaust flange 1106 and configured to apply compressive force between the first exhaust flange 1106 and the first exhaust chamber flange 1102, thereby maintaining a seal (and internal vacuum) within the first chamber body 308.

[0133] Similarly, to maintain the necessary compressive force between the second exhaust flange 1108 and the second chamber body 310, the processing module 1100 is equipped with a third pressure cylinder 1118 and a fourth pressure cylinder 1120. These cylinders are connected to the common chamber housing and include a third piston 1126 and a fourth piston 1128, respectively. These pistons are coupled to the second exhaust flange 1108 and configured to apply compressive force between the second exhaust flange 1108 and the second injection first exhaust chamber flange 1102, thereby maintaining a seal (and internal vacuum) within the second chamber body 310.

[0134] In various embodiments, the first exhaust flange and the second exhaust flange include flange member 1310 and exhaust port member 1312.

[0135] In various embodiments, a first pressure cylinder 1114 is attached to a first side of a first exhaust flange in a first vertical position, while a second pressure cylinder is attached to a second side of the first exhaust flange in a second vertical position different from the first vertical position. Similarly, a third pressure cylinder is attached to a first side of a second exhaust flange in a first vertical position, and a fourth pressure cylinder is attached to a second side of a second exhaust flange in a second vertical position different from the first vertical position.

[0136] As a non-restrictive example, Figure 15 The first and second exhaust flanges (1106, 1108) are shown, with their associated pressure cylinders in place. Note that the pressure cylinder housing is omitted. Figure 15 As shown, the first pressure cylinder 1114 is attached to the first side 1136a of the first exhaust flange 1106 via the first connector 1130, and the second pressure cylinder 1116 is attached to the second side 1138a of the first exhaust flange 1106 via the second connector 1132. Similarly, the third pressure cylinder 1118 is attached to the first side 1136b of the second exhaust flange 1108 via the third first connector 1130, and the third pressure cylinder 1118 is attached to the second side 1138b of the second exhaust flange 1108 via the fourth connector 1136.

[0137] In some embodiments, the first connecting member 1130 is located near the bottom of the flange member 1310 of the first exhaust flange 1106, while the second connecting member is located near the top of the flange member 1310 of the first exhaust flange, such as... Figure 15 As shown. Similarly, the third connector 1134 can be positioned near the bottom of the flange member 1310 of the second exhaust flange 1108, while the fourth connector 1136 can be positioned near the top of the flange member 1310 of the second exhaust flange 1108. In other embodiments, the positions of the connectors can be mirrored, such that the first connector 1130 and the third connector 1134 are positioned at the top of the flange member 1310, and the second connector 1132 and the fourth connector 1136 are positioned at the bottom of the flange member 1310.

[0138] The positioning of the pressure cylinder and its associated connecting parts at the aforementioned locations can have the advantage of facilitating a compact form of the exhaust assembly and the corresponding processing module 1100. For example, as Figure 12 As shown, the second pressure cylinder 1116 and the third pressure cylinder 1118 can be positioned vertically relative to each other, thereby reducing the space required to accommodate the pressure cylinders.

[0139] In various embodiments, the vacuum assembly is coupled to the exhaust assembly of the processing module, specifically to a first exhaust port and a second exhaust port. For example, the vacuum assembly may be configured to provide independent control over the exhaust pressure from each of the first and second chamber bodies.

[0140] The vacuum assembly is designed to effectively manage the removal of gases and maintain the desired pressure level within the chamber body.

[0141] Return to reference Figure 11 The vacuum assembly 1140 may include a common vacuum source 1142, which can serve as the primary mechanism for generating vacuum conditions within the first chamber body 308 and the second chamber body 310. The common vacuum source 1142 is connected to both the first chamber body and the second chamber body via a dedicated exhaust duct.

[0142] In various embodiments, a first exhaust conduit 1148 is coupled to a first exhaust port 1144 of the first chamber body 308 and extends to a common vacuum source 1142. The first exhaust conduit 1148 facilitates the removal of gas from the first chamber body, ensuring a stable internal environment conducive to epitaxial deposition. To regulate the pressure within the first chamber body 308, a first pressure control valve 1152 is operatively coupled to the first exhaust conduit 1148. The first pressure control valve 1152 allows for precise control of the pressure level, thereby ensuring that desired vacuum conditions are maintained within the first chamber body. Similarly, a second exhaust conduit 1150 is coupled to a second exhaust port 1146 of the second chamber body 310 and extends to the common vacuum source 1142. The second exhaust conduit 1150 performs the same function as the first exhaust conduit, but for the second chamber body. The second exhaust conduit 1150 ensures effective gas removal and maintains a stable internal environment. A second pressure control valve 1154 is operatively coupled to the second exhaust conduit 1150, thereby providing the same level of precise pressure control as the first valve. This ensures that the vacuum conditions within the main body of the second chamber are also maintained at the desired level.

[0143] The integration of these components within the vacuum assembly (1140) allows for the simultaneous and independent management of gas and pressure levels in both chamber bodies. The common vacuum source 1142, together with the first and second exhaust ducts and their respective pressure control valves, ensures that the processing module (1100) operates efficiently and effectively, supporting the simultaneous epitaxial deposition of material layers.

[0144] In various embodiments, the provided processing module includes an independently controllable lifting mechanism for raising and lowering an upper lamp housing containing multiple heating lamps for heating the interiors of a first chamber body and a second chamber body. By independently controlling the upper lamp housing, multiple lamps can be more easily accessed when maintenance and / or lamp replacement is required.

[0145] In one or more embodiments of this disclosure, the processing module includes: a support frame comprising a vertical frame and a horizontal frame; a common chamber housing supported by the support frame; and a first chamber body and a second chamber body disposed within the common chamber housing. Each chamber body includes a ceramic weldment having an upper wall and a lower wall. The module also includes a first lamp housing and a second lamp housing for heating the interior of the chamber body, and a first lifting mechanism and a second lifting mechanism for independently raising and lowering the lamp housing.

[0146] Figure 16 and Figure 17 One or more embodiments of the lifting mechanism are shown. Figure 16 A schematic diagram of the processing module 1600 is shown, in which both lamp housings are in the off position, while Figure 17 A schematic diagram of the processing module 1600 is shown, wherein the first lamp housing is in the open position and the second lamp housing is in the closed position.

[0147] In various embodiments, the processing module 1600 includes a support frame 1602, which includes a vertical frame 1604 and a horizontal frame 1606. The vertical frame 1604 provides structural support, while the horizontal frame 1606 provides stability and alignment for components housed within the processing module.

[0148] The common chamber housing 312 is supported by a support frame 1602. This housing surrounds a first chamber body 308 and a second chamber body 310, which are positioned adjacent to each other on either side of a central plane 314. Each chamber body includes a ceramic weldment having an upper wall and a lower wall. The upper wall extends longitudinally between an injection chamber flange and a longitudinally opposing exhaust chamber flange, while the lower wall is positioned below and parallel to the upper wall, with movable lifting elements as previously described.

[0149] The first lamp housing 1614 and the second lamp housing 1616 are configured to heat the interiors of the first chamber body 308 and the second chamber body 310, respectively. The first lamp housing 1614 and the second lamp housing 1616 are positioned on either side of the central plane 314 and each includes a housing bottom 1618, which is hingedly connected to the horizontal frame 1606 via a hinge mechanism 1620. A first lifting coupling 1636 is positioned on the upper surface of the housing bottom 1618.

[0150] The first lifting mechanism 1622 and the second lifting mechanism 1624 are operatively connected to the vertical frame 1604. Each lifting mechanism includes a movable lifting element 1626 having a second lifting coupling 1638, a drive mechanism 1628 configured to raise and lower the movable lifting element 1626 around the vertical frame 1604, and a lifting arm 1630 having a first pivot end 1632 connected to the first lifting coupling 1636 and a second pivot end 1634 connected to the second lifting coupling 1638. These lifting mechanisms are designed to independently raise and lower the first lamp housing 1614 and the second lamp housing 1616 between a closed position and an open position.

[0151] The support frame 1602 is constructed of durable materials to ensure stability and lifespan. The vertical frame 1604 is designed to bear the weight and operational stress of the common chamber housing 312 and the lamp housings (1614, 1616). The horizontal frame 1606 provides additional support and alignment to ensure that the chamber body and lamp housing remain properly positioned during operation.

[0152] In various embodiments, the first lifting mechanism 1622 and the second lifting mechanism 1624 also include a position sensor 1640, which is configured to monitor the position of the first lamp housing and the second lamp housing during raising and lowering operations. This position sensor 1640 ensures accurate and precise control of the lamp housing, enhancing the overall performance of the processing module.

[0153] In various embodiments, the drive mechanism 1628 includes a smart motor configured to control and regulate the travel speed of the first lamp housing 1614 and the second lamp housing 1616 during raising and lowering operations. The smart motor is operatively linked to a position sensor 1640 and configured to reduce the travel speed of the first lamp housing 1614 and the second lamp housing 1616 during lowering operations when they approach the first chamber body 308 and the second chamber body 310. These features prevent movement of the lamp housings during raising and lowering operations from displacing elements within the chamber bodies (e.g., support substrates) and also prevent any sudden movement that could disrupt the deposition process.

[0154] Additionally, the intelligent motor can be configured to reduce the travel speed of the first lamp housing 1614 and the second lamp housing 1616 when approaching the vertical frame 1604 during lifting operations. This ensures smooth and controlled movement of the lamp housings, thereby reducing the risk of mechanical failure or misalignment.

[0155] In various embodiments, the first lifting mechanism 1622 and the second lifting mechanism 1624 are connected to the vertical frame 1604 via a pivoting mechanism 1642. This pivoting mechanism 1642 is configured to allow the first lamp housing 1614 and the second lamp housing 1616 to rotate about the vertical frame 1604 when in the open position. The pivoting mechanism 1642 causes the first lamp housing 1614 and the second lamp housing 1616 about the vertical frame 1604 toward the exhaust chamber flange (see...). Figure 7 The lamp can be rotated to obtain a first plurality of lamps disposed in the first lamp housing 1614 and a second plurality of lamps disposed in the second lamp housing 1616.

[0156] Figure 17 The processing module 1600 is shown, with the first lamp housing 1614 in the open position and the second lamp housing 1616 in the closed position. Raising the first lamp housing 1614 to the open position can be achieved by engaging the drive mechanism 1628, thereby vertically raising the movable lifting element 1626 relative to the vertical frame.

[0157] In various embodiments, the horizontal frame 1606 also includes an operable sliding mechanism 1644 configured to allow movement of the first and second lamp housings in a direction away from the exhaust flange when in the open position. This feature facilitates lamp maintenance and replacement, enhancing the overall maintainability of the processing module.

[0158] In another embodiment, the first lifting mechanism 1622 is configured to operably move a first plurality of lights (e.g., lamps) between a closed position and an open position. Figure 4 (414), in the closed position, the first plurality of lights are positioned on the upper wall of the first chamber body (e.g., Figure 4 Above 430), in the open position, the first multiple lights (e.g.) Figure 4 (414) is located near the vertical frame 1604. Similarly, the second lifting mechanism 1624 is configured to operably move a second plurality of lights (e.g., ...) between a closed position and an open position. Figure 4 (416), in the closed position, the second plurality of lights are positioned on the upper wall of the second chamber body (e.g., Figure 4 Above 430), in the open position, the second plurality of lights are close to the vertical frame 1604.

[0159] For the purpose of summarizing the invention and its advantages relative to the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all of these objects or advantages may necessarily be achieved according to any particular embodiment of the invention. Therefore, for example, those skilled in the art will recognize that the invention may be practiced or performed in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0160] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings. The invention is not limited to any particular embodiment(s) disclosed.

Claims

1. A processing module configured to perform simultaneous epitaxial deposition of a material layer, the processing module comprising: Common chamber shell; A first chamber body is disposed in the common chamber shell. The first chamber body includes a first ceramic weldment having a first chamber exterior and a first chamber interior. The first chamber exterior includes a plurality of first external ribs extending laterally around the first chamber exterior. The first chamber interior surrounds a first processing volume. The second chamber body is disposed in the common chamber housing. The second chamber body includes a second ceramic weldment having a second chamber exterior and a second chamber interior. The second chamber exterior includes a plurality of second external ribs extending laterally around the second chamber exterior. The second chamber interior surrounds a second processing volume. Both the first chamber body and the second chamber body have an upper wall and a lower wall. The upper wall extends longitudinally between the injection chamber flange and the longitudinally opposite exhaust chamber flange. The lower wall is located below the upper wall and is parallel to the upper wall. The first chamber body and the second chamber body are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of the central plane.

2. The processing module according to claim 1, wherein, The upper wall includes an upper wall panel portion and an upper wall rib portion, the upper wall panel portion and the upper wall rib portion defining an unwelded ribbed area of ​​the upper wall, the unwelded ribbed area of ​​the upper wall being formed from a first single quartz workpiece using a subtractive manufacturing technique, thereby forming the upper portion of the plurality of first external ribs and the plurality of second external ribs.

3. The processing module according to claim 2, wherein, The lower wall includes a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed area of ​​the lower wall, the unwelded ribbed area of ​​the lower wall being formed from a second single quartz workpiece using a subtractive manufacturing technique, and forming the lower portion of the plurality of first external ribs and the plurality of second external ribs.

4. The processing module according to claim 3, further comprising a longitudinal coolant channel disposed between the first chamber body and the second chamber body, the longitudinal coolant channel being at least partially defined by the lateral separation distance between the first chamber body and the second chamber body.

5. The processing module according to claim 4, wherein, The longitudinal coolant passage extends at least partially from the injection chamber flange of the first chamber body and the second chamber body to the exhaust chamber flange.

6. The processing module of claim 5, further comprising a cooling system coupled to the longitudinal coolant channel, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant channel, thereby providing at least partially temperature isolation between the first processing volume and the second processing volume.

7. The processing module according to claim 6, wherein, The longitudinal coolant channel further includes a first longitudinal diaphragm member connected to the first chamber body and a second longitudinal diaphragm member connected to the second chamber body; Wherein, the first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of the central plane; and The first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly, which is configured to receive the coolant fluid flow from the cooling system.

8. The processing module of claim 7, further comprising a first upper heater array and a second upper heater array, the first upper heater array being positioned above the upper wall of the first chamber body, the second upper heater array being positioned above the upper wall of the second chamber body, the first heater array and the second heater array being configured to independently heat the first processing volume and the second processing volume.

9. The processing module according to claim 1, wherein, Both the first chamber body and the second chamber body have an aspect ratio between 0.7 and 0.

4.

10. The processing module according to claim 1, wherein, Both the first chamber body and the second chamber body have an aspect ratio between 0.7 and 0.

4.

11. A semiconductor processing system, comprising: A wafer transfer module includes a facet having a first lateral hole and a second lateral hole; A gate valve assembly, which is connected to the wafer transfer module, the gate valve assembly includes a first substrate channel and a second substrate channel; as well as A processing module, connected to the gate valve assembly, the processing module comprising: Common chamber shell; A first chamber body is disposed in the common chamber shell. The first chamber body includes a first ceramic weldment having a first chamber exterior and a first chamber interior. The first chamber exterior includes a plurality of first external ribs extending laterally around the first chamber exterior. The first chamber interior surrounds a first processing volume. The second chamber body is disposed in the common chamber housing. The second chamber body includes a second ceramic weldment having a second chamber exterior and a second chamber interior. The second chamber exterior includes a plurality of second external ribs extending laterally around the second chamber exterior. The second chamber interior surrounds a second processing volume. Both the first chamber body and the second chamber body have an upper wall and a lower wall. The upper wall extends longitudinally between the injection chamber flange and the longitudinally opposite exhaust chamber flange. The lower wall is located below the upper wall and is parallel to the upper wall. The first chamber body and the second chamber body are laterally separated by a lateral separation distance and are positioned adjacent to each other on either side of the central plane.

12. The semiconductor processing system according to claim 11, wherein, The upper wall includes an upper wall panel portion and an upper wall rib portion, the upper wall panel portion and the upper wall rib portion defining an unwelded ribbed area of ​​the upper wall, the unwelded ribbed area of ​​the upper wall being formed from a first single quartz workpiece using a subtractive manufacturing technique and forming the upper part of the plurality of first external ribs and the plurality of second external ribs.

13. The semiconductor processing system according to claim 12, wherein, The lower wall includes a lower wall plate portion and a lower wall rib portion, the lower wall plate portion and the lower wall rib portion defining an unwelded ribbed area of ​​the lower wall, the unwelded ribbed area of ​​the lower wall being formed from a second single quartz workpiece using a subtractive manufacturing technique and forming the lower portion of the plurality of first external ribs and the plurality of second external ribs.

14. The semiconductor processing system of claim 13, further comprising a longitudinal coolant channel disposed between the first chamber body and the second chamber body, the longitudinal coolant channel being at least partially defined by the lateral separation distance between the first chamber body and the second chamber body.

15. The semiconductor processing system according to claim 14, wherein, The longitudinal coolant passage extends at least partially from the injection chamber flange of the first chamber body and the second chamber body to the exhaust chamber flange.

16. The semiconductor processing system of claim 15, further comprising a cooling system coupled to the longitudinal coolant channel, the cooling system being configured to provide a coolant fluid flow through the longitudinal coolant channel, thereby providing at least partially temperature isolation between the first processing volume and the second processing volume.

17. The semiconductor processing system according to claim 16, wherein, The longitudinal coolant channel further includes a first longitudinal diaphragm member connected to the first chamber body and a second longitudinal diaphragm member connected to the second chamber body; Wherein, the first longitudinal diaphragm member and the second longitudinal diaphragm member are laterally positioned adjacent to each other on either side of the central plane; and The first longitudinal diaphragm member and the second longitudinal diaphragm member form a heat exchanger assembly, which is configured to receive the coolant fluid flow from the cooling system.

18. The semiconductor processing system of claim 17, further comprising a first upper heater array and a second upper heater array, the first upper heater array being positioned above the upper wall of the first chamber body, the second upper heater array being positioned above the upper wall of the second chamber body, the first heater array and the second heater array being configured to independently heat the first processing volume and the second processing volume.

19. The semiconductor processing system according to claim 11, wherein, Both the first chamber body and the second chamber body have an aspect ratio between 0.7 and 0.

4.

20. The semiconductor processing system according to claim 11, wherein, The semiconductor processing system is a cluster-type platform.

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