A thin film growth apparatus, an oxide thin film, and a method for growing the same

By adding a beam current limiting tube and a vacuum pump group to the molecular beam epitaxy equipment, a pressure difference isolation zone was constructed, which solved the problem of oxidation of easily oxidized source materials in an oxygen-rich environment. This enabled repeatable and precise control of the concentration of easily oxidized source materials in the thin film, and improved the stability and consistency of the thin film growth.

CN122105614APending Publication Date: 2026-05-29HANGZHOU FUJIA GALLIUM TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HANGZHOU FUJIA GALLIUM TECH CO LTD
Filing Date
2026-03-03
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In existing molecular beam epitaxy technology, easily oxidizable source materials are easily oxidized in oxygen-rich environments, leading to unsteady consumption of source materials and beam drift, making it impossible to achieve repeatability and precise control of the concentration of easily oxidizable source materials in the thin film.

Method used

A beam current limiting tube and a vacuum pump group are added between the main growth chamber and the beam source furnace to construct a pressure difference isolation zone. Reactive oxygen is captured through the gas diffusion principle to form a local ultra-high vacuum environment, which physically isolates the easily oxidized source material from the reactive oxygen, ensuring the stability and repeatability of the source material beam.

Benefits of technology

It achieves repeatable and precise control of the concentration of easily oxidized source materials, avoids the oxidation of source materials, ensures the stability and consistency of thin film growth, broadens the process window, and improves the control accuracy of low-concentration doping.

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Abstract

The application discloses a thin film growth device, an oxide thin film and a growth method thereof, and relates to the technical field of thin film growth. The thin film growth device comprises a molecular beam epitaxy device, the molecular beam epitaxy device comprises a main growth cavity, a plurality of beam source furnaces and an oxygen source generator, the oxygen source generator is used for providing an active oxygen atmosphere into the main growth cavity; a plurality of beam current limiting tubes, one end of each beam current limiting tube is connected with a different beam source furnace, and the other end is connected with the main growth cavity; and a plurality of vacuum pump groups, which are arranged on each beam current limiting tube and are used for pumping away the active oxygen diffused from the main growth cavity into the beam current limiting tube. The thin film growth device provided by the application physically isolates the oxygen-rich growth environment from the oxidizable source material, simultaneously meets the oxygen demand of thin film epitaxy and the anti-oxidation demand of the oxidizable source material, and guarantees the long-term flux stability and consistency of the oxidizable source material beam.
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