Silicon carbide epitaxial growth processing apparatus and assembly inspection method
By using a central shaft with a longer axial dimension in the silicon carbide epitaxial growth apparatus to link with the rotating carrier, friction between the rotating carrier and the lower half-moon assembly is avoided, thus solving the problem of graphite powder contamination and improving the yield and molding quality of silicon carbide products.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING TIANKE HEDA SEMICON CO LTD
- Filing Date
- 2024-11-22
- Publication Date
- 2026-05-29
AI Technical Summary
In the prior art, the friction between the rotating carrier and the lower half-moon component in the silicon carbide epitaxial growth processing device causes graphite powder to be generated, which affects the yield of silicon carbide products.
A central rotating shaft with a long axial dimension is adopted, with its top end protruding from the top opening of the positioning shaft hole and linked with the rotating carrier to avoid direct contact and friction between the rotating carrier and the lower half-moon assembly. The rotating carrier is supported by protective gas.
This effectively avoids the contamination of silicon carbide products by graphite powder, and improves the yield rate and epitaxial growth quality of silicon carbide products.
Smart Images
Figure CN122105625A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor wafer finishing technology and related equipment, and particularly to a silicon carbide epitaxial growth processing apparatus and an assembly and inspection method for the apparatus. Background Technology
[0002] Silicon carbide wafers, as a core component in the semiconductor field, play a crucial role in the performance and technological development of semiconductor products. In the typical silicon carbide wafer manufacturing process, corresponding processing equipment is usually used to ensure the quality of epitaxial growth and forming of silicon carbide semiconductor materials. Consequently, the performance of this equipment for silicon carbide epitaxial growth and processing is one of the key areas for technological improvement in the industry.
[0003] Generally, silicon carbide epitaxial growth apparatuses typically use a lower crescent assembly as the bottom support structure. A central rotating shaft is then assembled in the middle of the lower crescent assembly, and a rotating carrier disk is aligned and assembled on top of the central rotating shaft, thus completing the main structure assembly of the apparatus. During actual operation, a protective gas introduced into the lower crescent assembly is used to moderately lift the rotating carrier disk, and the fixed-axis rotation of the rotating carrier disk enables the growth and shaping of the silicon carbide epitaxial layer located on the rotating carrier disk.
[0004] However, while the aforementioned device structure can meet the basic requirements of current silicon carbide epitaxial growth processing, the existing central rotating shaft is floatingly inserted into the central insertion hole of the lower half-moon module. During actual operation, the high-pressure airflow of the protective gas lifts the rotating carrier disk, which is linked to the central rotating shaft at its bottom, to complete the relevant operations. When the pressure or flow rate of the protective gas changes, causing a change in the lifting force of the airflow on the rotating carrier disk, or when the device pauses and the rotating carrier disk rapidly moves back to its original position on top of the lower half-moon module, the rotating carrier disk may fall back under its own inertial rotation and rub against the lower half-moon module. This causes the graphite-material-based lower half-moon module to generate graphite powder due to friction. This graphite powder is carried by the protective gas and blown onto the surface of the silicon carbide product during subsequent device operation, adversely affecting the silicon carbide epitaxial growth and molding quality, thus reducing the yield of the silicon carbide product.
[0005] In view of this, how to optimize the component structure of the silicon carbide epitaxial growth processing device, avoid the impact of graphite powder generated by the friction of its components on the quality of silicon carbide products, and improve the yield of silicon carbide products is an important technical problem that needs to be solved by those skilled in the art. Summary of the Invention
[0006] The purpose of this invention is to provide a silicon carbide epitaxial growth apparatus that effectively avoids the adverse effects of graphite powder generated by friction between the rotating carrier disk and the lower half-moon assembly on silicon carbide products, thereby improving the yield of silicon carbide products. Another purpose of this invention is to provide an assembly and inspection method for the aforementioned silicon carbide epitaxial growth apparatus.
[0007] To solve the above-mentioned technical problems, the present invention provides a silicon carbide epitaxial growth processing apparatus, including a lower crescent assembly with a positioning shaft hole in the middle. The lower crescent assembly is made of graphite. The axis of the positioning shaft hole extends vertically. A central rotating shaft is coaxially inserted into the positioning shaft hole in a fixed-axis rotatable manner. The bottom end of the central rotating shaft abuts against the bottom of the positioning shaft hole, and the top end of the central rotating shaft protrudes vertically from the top opening of the positioning shaft hole.
[0008] A rotating carrier is linked to the top of the central rotating shaft. The center of the bottom surface of the rotating carrier has a linkage shaft hole. The top of the central rotating shaft is coaxially aligned and inserted into the linkage shaft hole. The height of the top of the central rotating shaft protruding vertically from the top opening of the positioning shaft hole is not less than the axial depth of the linkage shaft hole.
[0009] The outer wall of the lower half-moon assembly has an air supply port for the introduction of protective gas, and the interior of the lower half-moon assembly has an air guide pipe connecting the air supply port with the positioning shaft hole and the rotating carrier.
[0010] Preferably, the outer peripheral wall of the central rotating shaft is in close contact with and slidably adapted to the inner peripheral wall of the positioning shaft hole.
[0011] Preferably, the outer diameter of the central rotating shaft is 5.95mm to 6.05mm.
[0012] Preferably, the inner diameter of the positioning shaft hole is 5.95mm to 6.05mm.
[0013] Preferably, the inner diameter of the linkage shaft hole is 6.05mm to 6.15mm.
[0014] Preferably, the axial length of the top end of the central rotating shaft protruding from the top opening of the positioning shaft hole is not less than 4mm, and the axial depth of the linkage shaft hole is 4mm~6mm.
[0015] Preferably, the axial length of the central rotating shaft is 9mm to 13mm, and the axial depth of the positioning shaft hole is 5mm to 7mm.
[0016] Preferably, the protective gas introduced into the gas supply port is nitrogen.
[0017] The present invention also provides an assembly and inspection method for a silicon carbide epitaxial growth processing apparatus, used in any of the preceding claims, comprising the steps of:
[0018] Place the lower half of the moon assembly on a horizontal surface, then align and insert the central rotating shaft into the positioning shaft hole, so that the bottom end of the central rotating shaft abuts against the bottom of the positioning shaft hole. Then, lift the central rotating shaft slightly upward and use a vernier caliper to measure the height of the top end of the central rotating shaft protruding from the top opening of the positioning shaft hole, ensuring that this height is not less than the axial depth of the linkage shaft hole at the bottom of the rotating disk. After that, align and insert the top end of the central rotating shaft into the linkage shaft hole, so that the rotating disk and the central rotating shaft are linked and assembled.
[0019] Protective gas with a flow rate of 2-3 L / min is introduced into the air supply port through an external air supply device to drive the rotating carrier plate to rotate. At this time, observe whether the rotation of the rotating carrier plate is stable and whether the rotating carrier plate emits abnormal noise during the rotation. If the rotating carrier plate rotates stably and there is no abnormal noise, it is determined that the component installation of the current silicon carbide epitaxial growth process device is complete.
[0020] After the silicon carbide epitaxial growth device and other matching graphite accessories are assembled, they are placed into the process chamber. Then, the chamber is closed, vacuumed, gas backfilled and heated in sequence before the silicon carbide epitaxial growth operation is carried out.
[0021] Preferably, when the central rotating shaft is lifted moderately upward from the positioning shaft hole, a moderate lateral force is applied to the central rotating shaft, and it is observed whether the central rotating shaft has radial swing or loosening when the force is applied. If the central rotating shaft has no swing and no loosening, it is determined that the central rotating shaft and the positioning shaft hole are installed in place.
[0022] Compared to the aforementioned background technology, the silicon carbide epitaxial growth apparatus provided by this invention, during component assembly and operation, utilizes a central rotating shaft with a relatively long axial dimension. This allows the top end of the central rotating shaft to protrude vertically beyond the top opening of the positioning shaft hole after the bottom end of the central rotating shaft reliably abuts against the bottom end of the positioning shaft hole. Furthermore, the size of the top end of the central rotating shaft protruding beyond the top opening of the positioning shaft hole is not less than the depth of the bottom linkage shaft hole of the rotating disk. Consequently, after the top end of the central rotating shaft is aligned and inserted into the linkage shaft hole, the central rotating shaft can reliably support the main structure of the rotating disk, effectively avoiding rigid contact and structural friction between the bottom of the rotating disk and the top of the lower half-moon assembly. This, in turn, prevents the generation of graphite powder and other material dust and debris caused by the friction between the rotating disk and the lower half-moon assembly. This eliminates the adverse effects on silicon carbide products caused by high-pressure airflow of graphite powder and protective gas being blown onto the surface of the silicon carbide product on the rotating carrier, thus significantly improving the product forming effect after silicon carbide epitaxial growth and correspondingly increasing the yield of silicon carbide wafers and related products.
[0023] Furthermore, this invention also provides an assembly and testing method for the aforementioned silicon carbide epitaxial growth apparatus. Through sequentially implemented operational steps, it effectively ensures the proper fit of the central rotating shaft after insertion into the positioning shaft hole. This ensures that the central rotating shaft extends sufficiently beyond the top of the positioning shaft hole to meet the operational requirements of the rotating carrier after insertion into the linkage shaft hole. After assembly, a suitable vertical clearance remains between the bottom of the rotating carrier and the lower half-moon component, preventing direct contact and friction between them. The method combines this with the equipment's operating status after the introduction of protective gas to determine if the assembly fit is adequate. The test results are accurate and reliable, fully guaranteeing the structural reliability of the assembled silicon carbide epitaxial growth apparatus. During operation, the assembled apparatus prevents the generation of graphite powder due to friction between the rotating carrier and the lower half-moon component, thus avoiding contamination of the silicon carbide product surface by graphite powder. This significantly optimizes the quality of silicon carbide epitaxial growth and improves the yield rate of silicon carbide products. Attached Figure Description
[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1This is an isometric perspective view of the assembly structure of a silicon carbide epitaxial growth apparatus provided in a specific embodiment of the present invention.
[0026] Figure 2 for Figure 1 Side sectional view.
[0027] in:
[0028] 11-Lower half-moon assembly; 111-Positioning shaft hole; 112-Air supply port;
[0029] 12-Center pivot;
[0030] 13-Rotating carrier; 131-Linkage shaft hole;
[0031] 14-High-pressure air pipe. Detailed Implementation
[0032] The core of this invention is to provide a silicon carbide epitaxial growth processing apparatus, which can effectively avoid the adverse effects of graphite powder generated by friction between the rotating carrier disk and the lower half-moon assembly on silicon carbide products, thereby improving the yield of silicon carbide products; and also provides an assembly and inspection method for the silicon carbide epitaxial growth processing apparatus used in the above-mentioned silicon carbide epitaxial growth processing apparatus.
[0033] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0034] Please refer to the reference. Figure 1 and Figure 2 .
[0035] In a specific embodiment, the silicon carbide epitaxial growth apparatus provided by the present invention includes a lower crescent assembly 11 with a positioning shaft hole 111 in the middle. The lower crescent assembly 11 is made of graphite. The axis of the positioning shaft hole 111 extends in the vertical direction. A central rotating shaft 12 is coaxially inserted into the positioning shaft hole 111 in a fixed-axis rotatable manner. The bottom end of the central rotating shaft 12 abuts against the bottom of the positioning shaft hole 111, and the top end of the central rotating shaft 12 protrudes vertically from the top opening of the positioning shaft hole 111.
[0036] A rotating carrier 13 is linked to the top of the central rotating shaft 12. The bottom center of the rotating carrier 13 has a linkage shaft hole 131. The top end of the central rotating shaft 12 is coaxially aligned and inserted into the linkage shaft hole 131. The height of the top end of the central rotating shaft 12 protruding vertically from the top opening of the positioning shaft hole 111 is not less than the axial depth of the linkage shaft hole 131.
[0037] The lower half of the crescent assembly 11 has an air supply port 112 on its outer wall for the introduction of protective gas, and the interior of the lower half of the crescent assembly 11 has an air guide pipe that connects the air supply port 112 with the positioning shaft hole 111 and the rotating carrier plate 13.
[0038] During the specific component assembly and operation, the use of a central rotating shaft 12 with a relatively long axial dimension ensures that after the bottom end of the central rotating shaft 12 reliably abuts against the bottom end of the positioning shaft hole 111, the top end of the central rotating shaft 12 can protrude vertically out of the top opening of the positioning shaft hole 111. The size of the top end of the central rotating shaft 12 protruding out of the top opening of the positioning shaft hole 111 is not less than the depth of the bottom linkage shaft hole 131 of the rotating carrier 13. Thus, after the top end of the central rotating shaft 12 is aligned and inserted into the linkage shaft hole 131, the central rotating shaft 12 can reliably support the main structure of the rotating carrier 13, thereby effectively avoiding rigid contact and structural friction between the bottom of the rotating carrier 13 and the top of the lower half-moon component 11, and thus avoiding the generation of graphite powder and other material dust and debris caused by the mutual friction between the rotating carrier 13 and the lower half-moon component 11. This eliminates the adverse effects on silicon carbide products caused by high-pressure airflow of graphite powder and protective gas being blown onto the surface of the silicon carbide product on the rotating carrier disk 13, thereby significantly improving the product forming effect after silicon carbide epitaxial growth and correspondingly increasing the yield of silicon carbide wafers and other related products.
[0039] It is easy to understand that during the specific operation of the equipment, high-pressure protective gas supplied by an external compressed gas supply device is sent into the interior of the silicon carbide epitaxial growth processing apparatus through the gas supply port 112. This high-pressure protective gas usually has two uses. First, it is used to transport the gas from bottom to top to the bottom of the rotating carrier 13 to support the rotating carrier 13, so that the rotating carrier 13 and the central rotating shaft 12 linked to its bottom are appropriately raised to prevent interference between the rotating carrier 13 and the central rotating shaft 12 and the main structure of the lower half-moon assembly 11 during subsequent rotation. Second, it is sent to the side of the main structure of the rotating carrier 13 or to a location that can be adapted to its tangential direction. The high-pressure airflow continuously blows through the rotating carrier 13, which is located in a horizontal or generally horizontal direction, causing the rotating carrier 13 to rotate on a fixed axis. This, in turn, causes the central rotating shaft 12 to rotate synchronously. Since most of the main structure of the central rotating shaft 12 is still inserted in the positioning shaft hole 111, the circumferential and radial adaptation between the positioning shaft hole 111 and the central rotating shaft 12 can effectively limit the effective range of motion of the central rotating shaft 12 and the rotating carrier 13, preventing the rotating carrier 13 from becoming radially loose or misaligned. This ensures the tracking and stability of the fixed axis rotation of the rotating carrier 13, thereby optimizing the corresponding silicon carbide epitaxial growth molding effect.
[0040] Generally, nitrogen is introduced into the gas supply port 112 as the protective gas, and the flow rate of nitrogen is 2-3 L / min, that is, the flow rate of nitrogen introduced into the silicon carbide epitaxial growth apparatus through the gas supply port 112 is 2 to 3 liters per minute. During the production and processing of silicon carbide, the chemical properties of nitrogen are relatively stable and it is unlikely to affect the silicon carbide processing. Of course, in practical applications, other chemically stable gases such as inert gases can also be used as protective gases introduced into the gas supply port 112 to meet the operational requirements of the silicon carbide epitaxial growth apparatus. However, considering the cost of using inert gases, it is still preferable to use nitrogen as the protective gas to further control the operation and maintenance costs of the silicon carbide epitaxial growth apparatus within a suitable range.
[0041] In addition, to ensure the efficiency of nitrogen supply, a high-pressure gas pipe 14 can be connected between the gas supply port 112 and the external gas supply equipment to ensure the gas pressure and delivery efficiency at the gas supply port 112, avoid pressure loss of nitrogen or other protective gases before they are delivered to the gas supply port 112, and ensure that the gas pressure delivered into the silicon carbide epitaxial growth processing device can meet the corresponding process requirements.
[0042] Specifically, the outer peripheral wall of the central rotating shaft 12 is in close contact with and slidably fitted to the inner peripheral wall of the positioning shaft hole 111. This allows the positioning shaft hole 111 to reliably limit the central rotating shaft 12 radially and circumferentially, preventing problems such as offset, swaying, or vibration during synchronous rotation with the rotating carrier plate 13. This improves the coaxiality and tracking performance of the central rotating shaft 12 during fixed-axis rotation, further optimizing the structural fit between the central rotating shaft 12 and the positioning shaft hole 111. It also prevents non-working wear between the central rotating shaft 12 and the positioning shaft hole 111, thereby extending their service life and making the rotation and operation of the central rotating shaft 12 smoother and more stable.
[0043] More specifically, the outer diameter of the central rotating shaft 12 is 5.95mm to 6.05mm, with 6mm being preferable. Correspondingly, the inner diameter of the positioning shaft hole 111 is generally 5.95mm to 6.05mm, with 6mm being preferable. This ensures that the inner diameter of the positioning shaft hole 111 and the outer diameter of the central rotating shaft 12 are fully matched, so that the outer peripheral wall of the central rotating shaft 12 and the inner peripheral wall of the positioning shaft hole 111 are tightly fitted and fully adapted to meet the high-precision assembly requirements of the components.
[0044] Accordingly, the inner diameter of the linkage shaft hole 131 is 6.05mm~6.15mm, with 6.1mm being preferable. The inner diameter of the linkage shaft hole 131 can be slightly larger than the outer diameter of the central rotating shaft 12, so that the top end of the central rotating shaft 12 can be smoothly inserted and withdrawn from the linkage shaft hole 131, so as to quickly complete the linkage connection and disengagement between the central rotating shaft 12 and the rotating carrier 13 when necessary, thereby meeting the operational requirements of different processes or special working conditions.
[0045] On the other hand, the axial length of the top end of the central rotating shaft 12 protruding from the top opening of the positioning shaft hole 111 is not less than 4mm, while the axial depth of the linkage shaft hole 131 is 4mm to 6mm. Considering the installation and adaptation effect and application requirements under most working conditions, the axial length of the top end of the central rotating shaft 12 protruding from the top opening of the positioning shaft hole 111 in the vertical direction is preferably 5mm to 6mm.
[0046] In this way, after the central rotating shaft 12 is aligned and assembled with the positioning shaft hole 111 and the linkage shaft hole 131 respectively, the vertical clearance between the rotating carrier disk 13 and the lower half-moon component 11 is guaranteed, avoiding the generation of graphite powder and other impurity powders due to friction caused by direct contact between the two. It also avoids problems such as imbalance and easy swaying of the rotating structure caused by the excessive axial dimension of the central rotating shaft 12. Thus, the rotation tracking and stability of the central rotating shaft 12 are effectively guaranteed, and the operation of the silicon carbide epitaxial growth processing device is made more stable and efficient, and the corresponding silicon carbide epitaxial growth forming effect is optimized accordingly.
[0047] Furthermore, the axial length of the central rotating shaft 12 is 9mm~13mm, and the axial depth of the positioning shaft hole 111 is 5mm~7mm. Similar to the design concept mentioned above, this axial length dimension helps to further optimize the fit between the central rotating shaft 12 and the positioning shaft hole 111, avoiding unstable rotation caused by excessive axial length of the central rotating shaft 12. At the same time, it can also fully ensure that the size of the top of the central rotating shaft 12 protruding from the top opening of the positioning shaft hole 111 meets the insertion and fitting requirements of the linkage shaft hole 131.
[0048] In addition, it should be emphasized again that for the equipment assembly and process application requirements under most working conditions, the length of the central rotating shaft 12 should be controlled within 9~13mm, and the outer diameter of the central rotating shaft 12 should be controlled within 6±0.05mm; the inner diameter of the positioning shaft hole 111 of the lower half-moon assembly 11 should be controlled within 6±0.05mm, and the axial depth of the positioning shaft hole 111 should be controlled within 5~7mm; the inner diameter of the linkage shaft hole 131 on the rotating carrier 13 should be controlled within 6.1±0.05mm, and its axial depth should be controlled within 4~6mm.
[0049] Of course, in specific assembly applications, the structural dimensions of the above-mentioned shafts and holes can be adjusted according to different actual working conditions. However, for most conventional silicon carbide processing operations, it is still advisable to use the above-mentioned dimensional parameters for design and application.
[0050] In one specific embodiment, the assembly and inspection method for the silicon carbide epitaxial growth apparatus provided by the present invention, using the silicon carbide epitaxial growth apparatus as described above, includes the following steps:
[0051] First, place the lower half-moon assembly 11 on a horizontal surface. Then, align and insert the central rotating shaft 12 into the positioning shaft hole 111, so that the bottom end of the central rotating shaft 12 abuts against the bottom of the positioning shaft hole 111. Then, lift the central rotating shaft 12 upwards slightly and use a vernier caliper to measure the height of the top end of the central rotating shaft 12 protruding from the top opening of the positioning shaft hole 111. Ensure that this height is not less than the axial depth of the linkage shaft hole 131 at the bottom of the rotating carrier 13. Then, align and insert the top end of the central rotating shaft 12 into the linkage shaft hole 131, so that the rotating carrier 13 and the central rotating shaft 12 are linked and assembled.
[0052] Afterwards, a protective gas with a flow rate of 2~3L / min can be introduced into the air supply port 112 through an external air supply device to drive the rotating carrier 13 to rotate. At this time, observe whether the rotation of the rotating carrier 13 is stable and observe whether the rotating carrier 13 emits abnormal noise during the rotation. If the rotating carrier 13 rotates stably and there is no abnormal noise, it is determined that the components of the current silicon carbide epitaxial growth processing device have been installed.
[0053] If abnormal noise is emitted during the rotation of the rotating carrier 13, or if there is instability such as shaking or swaying during the rotation of the rotating carrier 13, it is determined that there is an abnormality in the assembly structure between the rotating carrier 13, the central rotating shaft 12, and the lower half-moon component 11. The operator needs to adjust the assembly structure of the above components to a suitable state. If necessary, the assembled parts can be disassembled again. After the structural abnormality is investigated, they can be reassembled and the above detection process can be repeated until there is no abnormal noise during the rotation of the rotating carrier 13 and the rotation is smooth and stable.
[0054] Finally, after the silicon carbide epitaxial growth device and other matching graphite accessories are assembled, they are placed into the process chamber. Then, the chamber is closed, vacuumed, gas is backfilled, and heated in sequence before the silicon carbide epitaxial growth operation is carried out.
[0055] In the operational application of the above-mentioned assembly and testing method, the sequential implementation of each operational step effectively ensures the fit structure of the central rotating shaft 12 after it is inserted into the positioning shaft hole 111. This ensures that the size of the central rotating shaft 12 extending beyond the top of the positioning shaft hole 111 is sufficient to meet the operational requirements of the rotating carrier 13 after its insertion into the linkage shaft hole 131. Furthermore, after the assembly is completed, there remains a suitable vertical clearance between the bottom of the rotating carrier 13 and the lower half-moon assembly 11, preventing any misalignment between the bottom of the rotating carrier 13 and the top of the lower half-moon assembly 11. The direct contact and friction between the components, combined with the equipment operation status after the introduction of protective gas, determine whether the component installation and adaptation are in place. The test results are accurate and reliable, which can fully guarantee the structural reliability of the silicon carbide epitaxial growth processing device after assembly. During the operation of the assembled silicon carbide epitaxial growth processing device, graphite powder will not be generated due to the mutual friction between the rotating carrier disk 13 and the lower half-moon component 11, thereby avoiding contamination of the silicon carbide product surface by graphite powder. This significantly optimizes the quality of silicon carbide epitaxial growth and improves the yield of silicon carbide products.
[0056] In another specific embodiment, the assembly and inspection method for the silicon carbide epitaxial growth apparatus provided by the present invention uses the silicon carbide epitaxial growth apparatus as described above and includes the following steps:
[0057] First, place the lower half of the crescent assembly 11 on a horizontal surface. Then, align and insert the central rotating shaft 12 into the positioning shaft hole 111, so that the bottom end of the central rotating shaft 12 abuts against the bottom of the positioning shaft hole 111. Then, lift the central rotating shaft 12 upwards moderately and apply a moderate lateral force to the central rotating shaft 12. Observe whether the central rotating shaft 12 has radial wobble or loosening when the force is applied. If the central rotating shaft 12 has no wobble and no loosening, it is determined that the central rotating shaft 12 and the positioning shaft hole 111 are installed in place.
[0058] If the central rotating shaft 12 has radial or circumferential sway or looseness, it is determined that there is an abnormality in the assembly structure between the central rotating shaft 12 and the positioning shaft hole 111. The operator needs to adjust the assembly structure of the above components to a suitable state. If necessary, the assembled parts can be disassembled and the corresponding parts replaced. After the structural abnormality is investigated, the parts are reassembled and the above detection process is repeated until the central rotating shaft 12 no longer has radial or circumferential sway or looseness.
[0059] At this time, use a vernier caliper to measure the height of the top end of the center rotating shaft 12 protruding from the top opening of the positioning shaft hole 111, so that the height is not less than the axial depth of the linkage shaft hole 131 at the bottom of the rotating carrier 13. Then, align and insert the top end of the center rotating shaft 12 into the linkage shaft hole 131, so that the rotating carrier 13 and the center rotating shaft 12 are linked and assembled.
[0060] Afterwards, a protective gas with a flow rate of 2~3L / min can be introduced into the air supply port 112 through an external air supply device to drive the rotating carrier 13 to rotate. At this time, observe whether the rotation of the rotating carrier 13 is stable and observe whether the rotating carrier 13 emits abnormal noise during the rotation. If the rotating carrier 13 rotates stably and there is no abnormal noise, it is determined that the components of the current silicon carbide epitaxial growth processing device have been installed.
[0061] If abnormal noise is emitted during the rotation of the rotating carrier 13, or if there is instability such as shaking or swaying during the rotation of the rotating carrier 13, it is determined that there is an abnormality in the assembly structure between the rotating carrier 13, the central rotating shaft 12, and the lower half-moon component 11. The operator needs to adjust the assembly structure of the above components to a suitable state. If necessary, the assembled parts can be disassembled again. After the structural abnormality is investigated, they can be reassembled and the above detection process can be repeated until there is no abnormal noise during the rotation of the rotating carrier 13 and the rotation is smooth and stable.
[0062] Finally, after the silicon carbide epitaxial growth device and other matching graphite accessories are assembled, they are placed into the process chamber. Then, the chamber is closed, vacuumed, gas is backfilled, and heated in sequence before the silicon carbide epitaxial growth operation is carried out.
[0063] In the operational application of the above-mentioned assembly and testing method, the sequential implementation of each operational step effectively ensures the fit structure of the central rotating shaft 12 after it is inserted into the positioning shaft hole 111. This ensures that the size of the central rotating shaft 12 extending beyond the top of the positioning shaft hole 111 is sufficient to meet the operational requirements of the rotating carrier 13 after its insertion into the linkage shaft hole 131. Furthermore, after the assembly is completed, there remains a suitable vertical clearance between the bottom of the rotating carrier 13 and the lower half-moon assembly 11, preventing any misalignment between the bottom of the rotating carrier 13 and the top of the lower half-moon assembly 11. The direct contact and friction between the components, combined with the equipment operation status after the introduction of protective gas, determine whether the component installation and adaptation are in place. The test results are accurate and reliable, which can fully guarantee the structural reliability of the silicon carbide epitaxial growth processing device after assembly. During the operation of the assembled silicon carbide epitaxial growth processing device, graphite powder will not be generated due to the mutual friction between the rotating carrier disk 13 and the lower half-moon component 11, thereby avoiding contamination of the silicon carbide product surface by graphite powder. This significantly optimizes the quality of silicon carbide epitaxial growth and improves the yield of silicon carbide products.
[0064] In summary, the silicon carbide epitaxial growth apparatus provided in this invention, during component assembly and operation, utilizes a central rotating shaft with a relatively long axial dimension. This allows the top end of the central rotating shaft to protrude vertically beyond the top opening of the positioning shaft hole after the bottom end of the central rotating shaft reliably abuts against the bottom end of the positioning shaft hole. Furthermore, the size of the top end of the central rotating shaft protruding beyond the top opening of the positioning shaft hole is not less than the depth of the bottom linkage shaft hole of the rotating disk. Consequently, after the top end of the central rotating shaft is aligned and inserted into the linkage shaft hole, the central rotating shaft can reliably support the main structure of the rotating disk, effectively avoiding rigid contact and structural friction between the bottom of the rotating disk and the top of the lower half-moon assembly. This, in turn, prevents the generation of graphite powder and other material dust and debris caused by the friction between the rotating disk and the lower half-moon assembly. This eliminates the adverse effects on silicon carbide products caused by high-pressure airflow of graphite powder and protective gas being blown onto the surface of the silicon carbide product on the rotating carrier, thus significantly improving the product forming effect after silicon carbide epitaxial growth and correspondingly increasing the yield of silicon carbide wafers and related products.
[0065] Furthermore, the assembly and inspection method for the silicon carbide epitaxial growth processing apparatus provided in this invention, used in the silicon carbide epitaxial growth processing apparatus as described above, effectively ensures the fit structure of the central rotating shaft after it is inserted into the positioning shaft hole through the sequential implementation of each operation step. This ensures that the size of the central rotating shaft extending beyond the top of the positioning shaft hole is sufficient to meet the operational requirements of the rotating carrier after the central rotating shaft is inserted into the linkage shaft hole. After the components are installed, there is still a suitable vertical clearance between the bottom of the rotating carrier and the lower half-moon component, avoiding direct contact and friction between the bottom of the rotating carrier and the top of the lower half-moon component. The method combines the equipment operation status after the protective gas is introduced to determine whether the component installation and fit are in place. The inspection results are accurate and reliable, which can fully guarantee the structural reliability of the silicon carbide epitaxial growth processing apparatus after assembly. During the operation of the assembled silicon carbide epitaxial growth processing apparatus, graphite powder will not be generated due to the friction between the rotating carrier and the lower half-moon component, thereby avoiding contamination of the silicon carbide product surface by graphite powder. This significantly optimizes the silicon carbide epitaxial growth molding quality and improves the yield of silicon carbide products.
[0066] The foregoing has provided a detailed description of the silicon carbide epitaxial growth apparatus and the assembly and inspection method for the silicon carbide epitaxial growth apparatus provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are merely for the purpose of helping to understand the method and core ideas of the present invention. It should be noted that those skilled in the art can make various improvements and modifications to the present invention without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of the present invention.
Claims
1. A silicon carbide epitaxial growth processing apparatus, characterized in that, The device includes a lower crescent assembly with a positioning shaft hole in the middle. The lower crescent assembly is made of graphite. The axis of the positioning shaft hole extends vertically. A central rotating shaft is coaxially inserted into the positioning shaft hole in a fixed-axis rotational manner. The bottom end of the central rotating shaft abuts against the bottom of the positioning shaft hole, and the top end of the central rotating shaft protrudes vertically from the top opening of the positioning shaft hole. A rotating carrier is linked to the top of the central rotating shaft. The center of the bottom surface of the rotating carrier has a linkage shaft hole. The top of the central rotating shaft is coaxially aligned and inserted into the linkage shaft hole. The height of the top of the central rotating shaft protruding vertically from the top opening of the positioning shaft hole is not less than the axial depth of the linkage shaft hole. The outer wall of the lower half-moon assembly has an air supply port for the introduction of protective gas, and the interior of the lower half-moon assembly has an air guide pipe connecting the air supply port with the positioning shaft hole and the rotating carrier.
2. The silicon carbide epitaxial growth apparatus as described in claim 1, characterized in that, The outer peripheral wall of the central rotating shaft is in close contact with and slidably adapted to the inner peripheral wall of the positioning shaft hole.
3. The silicon carbide epitaxial growth apparatus as described in claim 2, characterized in that, The outer diameter of the central rotating shaft is 5.95mm~6.05mm.
4. The silicon carbide epitaxial growth apparatus as described in claim 3, characterized in that, The inner diameter of the positioning shaft hole is 5.95mm~6.05mm.
5. The silicon carbide epitaxial growth apparatus as described in claim 3, characterized in that, The inner diameter of the linkage shaft hole is 6.05mm~6.15mm.
6. The silicon carbide epitaxial growth apparatus as described in claim 1, characterized in that, The axial length of the top end of the central rotating shaft protruding from the top opening of the positioning shaft hole is not less than 4mm, and the axial depth of the linkage shaft hole is 4mm~6mm.
7. The silicon carbide epitaxial growth apparatus as described in claim 6, characterized in that, The axial length of the central rotating shaft is 9mm~13mm, and the axial depth of the positioning shaft hole is 5mm~7mm.
8. The silicon carbide epitaxial growth apparatus as described in claim 1, characterized in that, The protective gas introduced into the gas supply port is nitrogen.
9. A method for assembling and inspecting a silicon carbide epitaxial growth apparatus, characterized in that, An apparatus for silicon carbide epitaxial growth as described in any one of claims 1 to 8, comprising the steps of: Place the lower half of the moon assembly on a horizontal surface, then align and insert the central rotating shaft into the positioning shaft hole, so that the bottom end of the central rotating shaft abuts against the bottom of the positioning shaft hole. Then, lift the central rotating shaft slightly upward and use a vernier caliper to measure the height of the top end of the central rotating shaft protruding from the top opening of the positioning shaft hole, ensuring that this height is not less than the axial depth of the linkage shaft hole at the bottom of the rotating disk. After that, align and insert the top end of the central rotating shaft into the linkage shaft hole, so that the rotating disk and the central rotating shaft are linked and assembled. Protective gas with a flow rate of 2-3 L / min is introduced into the air supply port through an external air supply device to drive the rotating carrier plate to rotate. At this time, observe whether the rotation of the rotating carrier plate is stable and whether the rotating carrier plate emits abnormal noise during the rotation. If the rotating carrier plate rotates stably and there is no abnormal noise, it is determined that the component installation of the current silicon carbide epitaxial growth process device is complete. After the silicon carbide epitaxial growth device and other matching graphite accessories are assembled, they are placed into the process chamber. Then, the chamber is closed, vacuumed, gas backfilled and heated in sequence before the silicon carbide epitaxial growth operation is carried out.
10. The assembly and inspection method for the silicon carbide epitaxial growth apparatus as described in claim 9, characterized in that, When the central rotating shaft is lifted moderately upward from the positioning shaft hole, a moderate lateral force is applied to the central rotating shaft, and it is observed whether the central rotating shaft has radial swing or loosening when the force is applied. If the central rotating shaft has no swing and no loosening, it is determined that the central rotating shaft and the positioning shaft hole are installed in place.