一种薄膜错配应力变化规律的测试方法
By correcting the electron beam wavelength and working distance, combined with thermal expansion coefficient correction, the error problem in thin film stress detection was solved, enabling accurate testing of thin film mismatch stress variation patterns on different devices, thus improving testing accuracy and result consistency.
CN122108409BActive Publication Date: 2026-07-17NORTHEASTERN UNIV CHINA
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NORTHEASTERN UNIV CHINA
- Filing Date
- 2026-04-28
- Publication Date
- 2026-07-17
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Figure CN122108409B_ABST
Abstract
本发明一种薄膜错配应力变化规律的测试方法，属于薄膜应力测试技术领域，该方法利用已知晶格常数的标准样品，结合衍射原理进行逆向标定，在任意设备上获得精确的工作距离，消除对固定机械尺寸的依赖；明确采用经相对论修正的电子波长计算，确保波长的计算在高电压条件下仍保持理论精确度；实现对薄膜应力大小和类型的精确判定，使得测量结果在不同实验室或设备间具有可靠的可比性与复现性；通过旋转样品台改变电子束入射角度，采集衬底及生长薄膜后的RHEED图像，确定衬底与薄膜在界面处匹配的晶格常数最大公约数，明确界面匹配模式，通过考虑热膨胀系数对晶格常数的影响，校正得到衬底生长温度下的实际晶格常数；计算经热膨胀校正后的实际错配度。
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