半导体设备外壳涂层的结合强度无损检测方法

By setting an acoustic coupling medium on the surface of the coating of a semiconductor device housing and using pulsed laser shock to generate acoustic signals, and calculating the change in reflection coefficient, the problem of non-destructive and rapid detection of coating bonding strength in existing technologies is solved, achieving non-destructive, rapid, and accurate detection results.

CN122109336BActive Publication Date: 2026-07-17BEIJING HAOHAI JIAYE MASCH TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING HAOHAI JIAYE MASCH TECH CO LTD
Filing Date
2026-04-29
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing destructive testing methods cannot meet the requirements for piece-by-piece, non-destructive, and rapid testing of the bonding strength of semiconductor device casing coatings, as they pose a risk of missed detections and are cumbersome to operate.

Method used

An acoustic coupling medium is placed on the surface of the coating of a semiconductor device housing, and an acoustic signal is generated by pulsed laser shock. The first echo signal and the second echo signal are collected to calculate the acoustic pressure reflection coefficient and its change. The bonding strength between the coating and the substrate is determined by combining the average value of the calculated reflection coefficient change.

Benefits of technology

It enables non-destructive, rapid, and reliable testing of the bonding strength of the coating on the finished product casing. The test results are consistent with those of destructive methods, eliminating the risk of missed detections and meeting the high-throughput requirements of semiconductor production lines.

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Abstract

本发明提供半导体设备外壳涂层的结合强度无损检测方法,属于半导体设备检测技术领域,解决现有技术中难以无损评估涂层与基底结合强度的问题。方法包括:在涂层表面设置声波耦合介质及声波传感器,选择至少3个激光冲击点,将脉冲激光器产生的激光束聚焦至冲击点,采集激光冲击后的纵波信号,读取第一回波信号峰值电压和第二回波信号峰值电压,计算声压反射系数R;对相同冲击点进行第二次相同能量密度的激光冲击,获得反射系数变化量△R,计算多个冲击点△R的平均值△Ravg,当△Ravg>0.05时判定涂层与基底结合强度不满足要求,反之,满足要求。本发明可用于半导体设备外壳涂层结合强度的快速、无损评估。
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