一种掩膜版图优化方法、设备、存储介质及程序产品

By optimizing the rotation and merging of the initial layout in the integrated circuit photolithography process, the full coverage and reasonable layout of auxiliary patterns are achieved, solving the problem of unreasonable or missing auxiliary patterns, and improving the process window and chip manufacturing yield.

CN122110595BActive Publication Date: 2026-07-17NEXCHIP SEMICON CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NEXCHIP SEMICON CO LTD
Filing Date
2026-04-28
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In integrated circuit photolithography, improper addition of auxiliary patterns or missing parts in certain areas can lead to a low process window, affecting chip manufacturing yield.

Method used

By synchronously rotating the target graphic on the initial layout to multiple different angles, adding sub-resolution auxiliary graphics and merging them, and optimizing according to the mask manufacturing rules, the auxiliary graphics achieve full coverage and reasonable layout.

Benefits of technology

It effectively improved the photolithography process window, solved the problem of fragmented auxiliary pattern placement, and improved chip manufacturing yield.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122110595B_ABST
    Figure CN122110595B_ABST
Patent Text Reader

Abstract

本发明涉及集成电路技术领域,公开了一种掩膜版图优化方法、设备、存储介质及程序产品,所述方法包括:获取待优化的初始版图,所述初始版图上包括多个目标图形,目标图形为具有对称性的孔洞图形;将所述初始版图上的多个目标图形同步旋转至多个不同角度,得到多个中间版图;对初始版图和每个中间版图,分别添加亚分辨率辅助图形,得到多个亚分辨率辅助图形集合;将所述多个亚分辨率辅助图形集合进行合并;将合并后的亚分辨率辅助图形集合添加至初始版图;根据掩膜可制造规则,对合并后的亚分辨率辅助图形集合进行优化。本发明通过旋转目标图形至多个角度,添加适配各个角度的辅助图形并进行合并,实现了辅助图形的充分添加,提升了工艺窗口。
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Method for keeping consistency of auxiliary pattern during addition of auxiliary pattern and hole layer pattern

    CN121657354A

  • Method of designing a reticle and forming a semiconductor device therewith

    US20040248016A1