一种压接型IGBT器件封装结构优化方法及系统
By constructing an equivalent model of electro-thermal-carrier coupling and using the Krylov subspace projection method, the packaging structure of the press-fit IGBT device is optimized, which solves the problem of uneven current distribution in large-scale parallel IGBT chips and improves the accuracy and reliability of the current sharing characteristics calculation of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MAINTENANCE BRANCH COMPANY STATE GRID ZHEJIANG ELECTRIC POWER
- Filing Date
- 2026-04-29
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies make it difficult to achieve accurate current sharing characteristic assessment in large-scale parallel IGBT chip packaging structures, resulting in uneven current distribution between chips, which affects device lifespan and safety.
An equivalent model of the electric-thermal-carrier coupling of a press-fit IGBT device is constructed. The packaging structure is optimized by using differential algebraic equations and the Krylov subspace projection method to achieve accuracy and stability in the calculation of current sharing characteristics.
It improves the current distribution uniformity and heat dissipation capacity of large-scale parallel IGBT chip packaging structure, enhances the reliability and safety of the device, and is suitable for power electronic equipment such as DC circuit breakers, ultra-high voltage converters and high-power inverters.
Smart Images
Figure CN122113812B_ABST