一种利用固态硬盘主控芯片的闪存测试方法及系统
By acquiring hard drive operating data in real time and adjusting voltage parameters and timing settings using feedback control and adaptive timing optimization algorithms, the problem of insufficient hardware status awareness in existing flash memory testing methods is solved. This achieves accurate fault location and comprehensive test coverage, improving the reliability and accuracy of flash memory testing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG RUIZHAOXIN SEMICON TECH CO LTD
- Filing Date
- 2026-04-29
- Publication Date
- 2026-07-17
AI Technical Summary
Existing flash memory testing methods cannot perceive the underlying hardware status of the hard drive in real time and lack a collaborative feedback mechanism for voltage parameters and timing settings. This results in a disconnect between test parameters and the actual physical boundaries of the hardware, making it impossible to accurately locate fault points and creating blind spots in test coverage.
By collecting voltage fluctuation data and timing response signals during hard drive operation, and using feedback control algorithms and adaptive timing optimization algorithms to collaboratively adjust voltage parameters and timing settings, dynamic test parameters are generated. Multi-dimensional read and write stress tests are conducted, and combined with hardware feedback loops, fault location and quantitative evaluation of test coverage are achieved.
It significantly improves the authenticity and reliability of flash memory testing, achieves accuracy in fault location and sufficiency in test coverage, provides objective quantitative basis for reliability verification, and improves the degree of automation and the accuracy of evaluation results.
Smart Images
Figure CN122116993B_ABST