A storage structure and method of manufacture

Abstract

The application discloses a storage structure and a preparation method, which comprises at least two phase change storage units arranged side by side, each of the phase change storage units comprises a first conductive structure, a phase change unit and a second conductive structure in sequence, a first insulating heat-conducting structure is connected between the first conductive structures of two adjacent phase change storage units, an electrically-conductive heat-conductive structure is arranged between the phase change units of the two adjacent phase change storage units, the electrically-conductive heat-conductive structure is connected with the first insulating heat-conducting structure, the electrically-conductive heat-conductive structure is insulated from the phase change storage units on both sides through a first insulating heat-insulating layer, and is led outwards. The application can effectively dissipate the phase change residual heat under the premise of meeting the heat required for normal operation of the storage structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor integrated circuit technology, and in particular to a memory structure and its fabrication method. Background Technology

[0002] Phase-change memories, especially three-dimensional phase-change memories, are prone to accumulating heat during operation, which can affect their data retention or write performance, and may also cause thermal crosstalk between phase-change cells, leading to data storage errors. Summary of the Invention

[0003] The purpose of this invention is to overcome the above-mentioned defects in the prior art and to provide a storage structure and preparation method.

[0004] To achieve the above objectives, the technical solution of the present invention is as follows: This invention provides a storage structure, comprising: At least two phase change memory cells are arranged side by side. Each phase change memory cell includes a first conductive structure, a phase change cell, and a second conductive structure in sequence. A first insulating and thermally conductive structure is connected between the first conductive structures of two adjacent phase change memory cells. A conductive and thermally conductive structure is provided between the phase change cells of two adjacent phase change memory cells. The conductive and thermally conductive structure is connected to the first insulating and thermally conductive structure. The conductive and thermally conductive structure is insulated and isolated from the phase change memory cells on both sides by a first insulating and thermally insulating layer and is led outward.

[0005] Furthermore, multiple phase-change memory cells are arranged in rows and columns to form an array, creating a two-dimensional storage structure. The first conductive structures of each phase-change memory cell in the same row are connected to form a first wire, and the second conductive structures of each phase-change memory cell in the same column are connected to form a second wire. A first insulating and thermally conductive structure is connected between any two adjacent first conductive structures of the phase-change memory cells in the same column. The first insulating and thermally conductive structures located between two adjacent rows are connected to form a first insulating heat conductor and connected to the first wires on both sides. The conductive and thermally conductive structures are located between any two adjacent phase-change memory cells in the same column. Between the phase change units of the phase change memory cell, the conductive and thermally conductive structures located between adjacent rows are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change units in the same column. The first insulating thermal insulation layers located between adjacent rows are continuously distributed along the row direction on both sides of the conductive and thermally conductive body. The second conductors in adjacent columns are connected by second insulating thermally conductive bodies continuously distributed along the column direction. The phase change units of any two adjacent phase change memory cells in the same row are insulated and isolated from each other by the second insulating thermal insulation layer. The thermally conductive body is insulated from the second conductor. Alternatively, the first conductive structures of each phase-change memory cell located in the same column are connected as a first conductor, and the second conductive structures of each phase-change memory cell located in the same row are connected as a second conductor. The first insulating thermally conductive structure is connected between the first conductive structures of any two adjacent phase-change memory cells in the same row. The first insulating thermally conductive structures located between two adjacent columns are connected as a first insulating thermally conductive body and connected to the first conductors on both sides. The conductive thermally conductive structure is located between any two adjacent phase-change memory cells in the same row. Each of the conductive and thermally conductive structures between two adjacent columns is connected to form a conductive and thermally conductive body, and is connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change unit in the same row. Each of the first insulating thermal insulation layers located between two adjacent columns is continuously distributed along the column direction on both sides of the conductive and thermally conductive body. A second insulating thermally conductive body continuously distributed along the row direction is connected between the second conductors of two adjacent rows. The phase change units of any two adjacent phase change storage units located in the same column are insulated and isolated from each other by the second insulating thermal insulation layer. The conductive and thermally conductive body is insulated and isolated from the second conductor.

[0006] Furthermore, the conductive and heat-conducting body is insulated from the second wire by a first dielectric layer.

[0007] Furthermore, the second insulating and heat-insulating layer is provided with a second dielectric layer, which is connected to the second insulating heat conductor and is isolated from the first wire through the second insulating and heat-insulating layer.

[0008] Furthermore, at least two of the two-dimensional storage structures are stacked sequentially to form a three-dimensional storage structure, wherein adjacent two two-dimensional storage structures are stacked with a 90-degree offset from each other in the stacking direction, such that the row on one corresponds to the column on the other, and the second conductor on one located on the stacking surface is aligned with the first conductor on the other as a single shared conductor, and each phase change memory cell on the adjacent two two-dimensional storage structures corresponds to each other in the stacking direction.

[0009] Furthermore, the lowest two-dimensional storage structure is disposed on an insulating substrate via its first conductor. The first conductor on any upper two-dimensional storage structure and the second conductor on the adjacent lower two-dimensional storage structure are aligned in the same direction to form an integrated common conductor. The two ends of the conductive and heat-conducting body are led out to the peripheral circuit. The first conductor on the lowest two-dimensional storage structure serves as a bit line, and the integrated common conductors on it and the second conductor on the highest two-dimensional storage structure alternately serve as word lines and bit lines. Alternatively, the first conductor on the lowest two-dimensional storage structure serves as a word line, and the integrated common conductors on it and the second conductor on the highest two-dimensional storage structure alternately serve as bit lines and word lines.

[0010] The present invention also provides a method for fabricating a storage structure, comprising: At least two phase change memory cells are arranged side by side, and each phase change memory cell sequentially includes a first conductive structure, a phase change unit, and a second conductive structure; A first insulating and thermally conductive structure is formed between the first conductive structures of two adjacent phase-change memory cells; A conductive and thermally conductive structure is formed between two adjacent phase change memory cells. The conductive and thermally conductive structure is connected to the first insulating and thermally conductive structure and extends outward. A first insulating and thermally insulating layer is formed between the conductive and thermally conductive structure and the phase change memory cells on both sides.

[0011] Further, it further includes: forming a plurality of phase change memory cells arranged in rows and columns to form a two-dimensional memory structure; wherein, the first conductive structures of each phase change memory cell in the same row are connected to form a first wire, the second conductive structures of each phase change memory cell in the same column are connected to form a second wire, the first insulating and thermally conductive structure is connected between any two adjacent first conductive structures of the phase change memory cells in the same column, and the first insulating and thermally conductive structures between two adjacent rows are connected to form a first insulating and thermally conductive body and connected to the first wires on both sides, the conductive and thermally conductive structures are disposed between any two adjacent phase change memory cells in the same column. Between adjacent phase change memory cells, the conductive and thermally conductive structures located between adjacent rows are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and phase change cells in the same column. The first insulating thermal insulation layers located between adjacent rows are continuously distributed along the row direction on both sides of the conductive and thermally conductive body. The second conductors in adjacent columns are connected by second insulating thermally conductive bodies continuously distributed along the column direction. The phase change cells of any two adjacent phase change memory cells in the same row are insulated and isolated from each other by the second insulating thermal insulation layer. The conductive and heat-conducting body is insulated from the second wire. Alternatively, the first conductive structures of each phase-change memory cell located in the same column are connected as a first wire, and the second conductive structures of each phase-change memory cell located in the same row are connected as a second wire. The first insulating heat-conducting structure is connected between the first conductive structures of any two adjacent phase-change memory cells in the same row. The first insulating heat-conducting structures located between two adjacent columns are connected as a first insulating heat-conducting body and connected to the first wires on both sides. The conductive and heat-conducting structure is disposed between any two adjacent phase-change memory cells in the same row. Each of the conductive and heat-conducting structures located between two adjacent columns is connected to form a conductive and heat-conducting body, and is connected to the first insulating heat-conducting body. The first insulating heat-insulating layer is disposed between any two adjacent conductive and heat-conducting structures and the phase change unit in the same row. Each of the first insulating heat-insulating layers located between two adjacent columns is continuously distributed along the column direction on both sides of the conductive heat-conducting body. A second insulating heat-conducting body continuously distributed along the row direction is connected between the second conductors of two adjacent rows. The phase change units of any two adjacent phase change storage units located in the same column are insulated and isolated from each other by the second insulating heat-insulating layer. The conductive heat-conducting body is insulated and isolated from the second conductor.

[0012] Furthermore, forming the two-dimensional storage structure specifically includes: Form the first conductive layer; The first conductor layer is patterned to form multiple first conductors with gaps distributed along the X direction; A first insulating heat-conducting body is formed in the gap between each of the first wires, distributed along the X direction and connected to the first wires; A phase change unit layer is formed on the surface of the first conductor and on the surface of the first insulating heat conductor; The phase change unit layer is patterned to form multiple phase change unit bodies with gaps distributed along the Y direction; A second insulating and heat-insulating layer is formed in the gap between each phase change unit body along the Y direction on the sidewall of the phase change unit body and the surface of the first conductor, and a second dielectric layer is filled in the gap between each phase change unit body within the second insulating and heat-insulating layer; The phase change unit body is patterned to form multiple phase change units distributed in an array along the X and Y directions, exposing the surface of the first insulating heat conductor; A first insulating and heat-insulating layer is formed continuously along the X direction on the sidewalls of any two adjacent phase change units along the X direction, and a conductive and heat-conducting body is formed continuously along the X direction between adjacent first insulating and heat-insulating layers, with the top of the conductive and heat-conducting body being lower than the top of the first insulating and heat-insulating layer. A first dielectric layer is formed on the top of the conductive and heat-conducting body, and the surfaces of the first dielectric layer, the phase change unit, and the first insulating and heat-insulating layer are formed flush with each other, and then a second conductive layer is deposited. The second conductor layer is patterned to form multiple second conductors with gaps distributed along the Y direction; A second insulating heat conductor is formed in the gap between each of the second conductors, distributed along the Y direction and connected to the second conductors; The X direction is the row direction, and the Y direction is the column direction; or, the X direction is the column direction, and the Y direction is the row direction.

[0013] Furthermore, it also includes: forming at least two of the two-dimensional storage structures using the same method, such that the two-dimensional storage structures are stacked sequentially to form a three-dimensional storage structure, wherein adjacent two-dimensional storage structures are stacked with a 90-degree offset from each other in the stacking direction, such that the row on one corresponds to the column on the other, such that the second conductor on one of the stacked surfaces is aligned with the first conductor on the other as a single shared conductor, and the phase change memory cells on the adjacent two-dimensional storage structures correspond to each other in the stacking direction, and the last two-dimensional storage structure is disposed on an insulating substrate through its first conductor, wherein the insulating substrate includes a third dielectric layer or a third insulating thermally conductive layer.

[0014] As can be seen from the above technical solution, the present invention, by connecting a first insulating heat-conducting structure between the first conductive structures of two adjacent phase-change memory cells in the memory structure, and by setting a conductive heat-conducting structure connected to the first insulating heat-conducting structure between the phase-change cells of two adjacent phase-change memory cells, and insulating the conductive heat-conducting structure from the phase-change memory cells through a first insulating heat-insulating layer, can transfer excess heat other than the heat used for phase change in the phase-change cells to the conductive heat-conducting structure, and further transfer it to the outside for exhaust. Thus, while meeting the heat requirements for normal operation of the memory structure, it effectively dissipates excess phase-change heat, reduces excess heat accumulation, and reduces thermal crosstalk, thereby increasing operational reliability. The above structure can be further applied to array-type two-dimensional and three-dimensional memory structures. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the heat transfer path between the phase change units of a three-dimensional phase change memory.

[0016] Figures 2-4 This is a schematic diagram of a storage structure according to a preferred embodiment of the present invention.

[0017] Figure 5 This is a cross-sectional schematic diagram of a two-dimensional storage structure according to a preferred embodiment of the present invention. In the figure, (a) is the X-direction section and (b) is the Y-direction section.

[0018] Figure 6 This is a cross-sectional schematic diagram of a three-dimensional storage structure according to a preferred embodiment of the present invention. In the figure, (a) is the X-direction section and (b) is the Y-direction section.

[0019] Figure 7 This is a three-dimensional schematic diagram of a preferred embodiment of the present invention.

[0020] Figures 8-22 This is a schematic diagram of the process steps for preparing a three-dimensional storage structure according to a preferred embodiment of the present invention.

[0021] Figure 23 This is a schematic diagram of heat dissipation from the conductive and heat-conducting body in the three-dimensional storage structure of the present invention. In the figure, (a) is the conductive and heat-conducting body along the X direction, and (b) is the conductive and heat-conducting body along the Y direction. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0023] Phase-change RAM (PCRAM) is a novel type of memory that utilizes the different resistive properties of chalcogenide phase-change materials in their amorphous and crystalline states. In practical applications of PCRAM, Joule heating is generated when current passes through the heating electrodes and the phase-change material, causing the material to undergo a phase change. With the continuous SET or RESET operations of the PCRAM, a significant amount of heat accumulates within the memory array. For three-dimensional PCRAMs, due to their high array density, heat accumulation is even more pronounced, affecting data retention and write performance. Furthermore, for a single PCRAM cell, most of the heat is used to induce a phase change in the phase-change material; a small portion is transferred to other PCRAM cells via the dielectric and wires. This dissipated heat must be dissipated promptly; otherwise, thermal crosstalk may occur, leading to data storage errors. Therefore, it is necessary to improve the heat dissipation performance of three-dimensional PCRAMs.

[0024] Introducing heat-conducting wires into the interlayer medium between the phase-change memory cells of a three-dimensional phase-change memory allows the Joule heat of the phase-change cells to be dissipated through the wires, thus achieving heat dissipation. However, besides the medium 2, heat transfer between phase-change memory cells 1 can also occur through wires 6 (word lines and bit lines), such as... Figure 1 The arrow in the middle represents the heat transfer path. Figure 1The diagram shows a phase change unit structure containing a bidirectional threshold switch material layer 5 (OTS), a carbon layer 4 (C), and a phase change material layer 3 (PCM) for constructing a 1S1R phase change memory cell. Therefore, if the heat-conducting wires can effectively dissipate the heat transferred on the wire 6 and in the medium 2, heat dissipation efficiency can be effectively improved and thermal crosstalk reduced. On the other hand, phase change materials rely on Joule heating for phase change; while introducing heat-conducting wires can increase heat dissipation, it can also lead to a significant loss of Joule heat, reducing phase change efficiency. Therefore, the heat dissipation goal for phase change memory should be "to dissipate excess phase change heat and reduce heat accumulation while meeting the heat required for normal operation of the phase change memory."

[0025] The technical problem to be solved by this invention is to improve the heat dissipation performance of phase change memory, reduce thermal crosstalk, and improve device reliability while ensuring normal operation of phase change memory.

[0026] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0027] refer to Figure 2 A storage structure according to the present invention includes at least two phase change storage cells 10 arranged in parallel. Each phase change storage cell 10 includes, from bottom to top, a first conductive structure 11 (bottom electrode), a phase change cell 12, and a second conductive structure 13 (top electrode).

[0028] by Figure 2 Taking two adjacent phase-change memory cells 10 as an example, a first insulating and thermally conductive structure 16 is connected between the first conductive structures 11 of the two adjacent phase-change memory cells 10. Furthermore, a conductive and thermally conductive structure 14 is provided between the phase-change cells 12 of the two adjacent phase-change memory cells 10. The conductive and thermally conductive structure 14 is connected to the surface of the first insulating and thermally conductive structure 16 at its lower end. The conductive and thermally conductive structure 14 is insulated from the phase-change memory cells 10 on both sides by a first insulating and thermally insulating layer 15. The conductive and thermally conductive structure 14 extends outward to dissipate the heat transferred from the phase-change cells 12 to the outside of the memory structure.

[0029] In some embodiments, the storage structure is disposed within a medium. The space between the conductive and thermally conductive structure 14 and the first conductive structures 11 on both sides, and between the first insulating and thermally conductive structure 16 and the upper phase change unit 12, may be filled with a medium. A first insulating and thermally insulating layer 15 may also cover the top of the phase change unit 12, and the lower end of the second conductive structure 13 passes through the first insulating and thermally insulating layer 15 and connects to the top of the phase change unit 12.

[0030] It should be noted that the phase change unit 12 can be called a 1S1R structure as long as it contains at least one bidirectional threshold switching material layer (OTS) and one phase change material layer (PCM). However, in addition to the two materials OTS and PCM, the 1S1R structure may also contain other film layers such as C / W / NW.

[0031] In some embodiments, the phase change unit 12 comprises, from bottom to top, a bidirectional threshold switch material layer 121 (OTS), a carbon layer 122, a phase change material layer 123 (PCM), and a protective layer 124 (titanium nitride layer) to construct a 1S1R planar phase change memory. However, it is understood that this is only an example of a simple structure.

[0032] In some embodiments, the first conductive structure 11 and the first insulating and thermally conductive structure 16 are disposed on an insulating substrate.

[0033] Figure 3 An example is shown where a blade electrode 17 for heating is also provided between the first conductive structure 11 and the phase change unit 12.

[0034] It is worth noting that, for the 1S1R structure, the phase change material undergoes a phase change at the interface between the phase change material layer 123 and its adjacent film layer, such as the carbon layer 122. However, for planar phase change memories that do not contain OTS and carbon (such as 1T1R, 1D1R structures, etc.), ... Figure 4 As shown, the phase change material undergoes a phase change at the interface between the phase change material layer 123 and the first conductive structure 11. Therefore, in this case, the first insulating and thermally conductive structure 16 should be appropriately located away from the interface to prevent rapid heat loss, so as to dissipate residual heat while ensuring the normal operation of the phase change memory.

[0035] In some embodiments, a storage structure of the present invention includes a plurality of phase-change memory cells 10. Each phase-change memory cell 10 is arranged in rows and columns to form an array, forming a two-dimensional storage structure, which can be used to form a planar phase-change memory.

[0036] refer to Figure 5 An example of this is a two-dimensional storage structure having an array of 3×3 phase-change memory cells 10; Figure 5 (a) shows a cross-section of three of the phase-change memory cells 10 as seen from the X direction (perpendicular to the plane of the drawing). Figure 5 (b) shows a cross-section of three of the phase-change memory cells 10 as seen from the Y direction (perpendicular to the plane of the drawing). The X direction can be row-oriented, and the Y direction column-oriented. Alternatively, the X direction can be column-oriented, and the Y direction row-oriented.

[0037] Taking the X-axis as the row direction and the Y-axis as the column direction as an example, the first conductive structures 11 of each phase-change memory cell 10 located in the same row are connected as the first conductive wire 111. Thus, by... Figure 5(a) It can be seen that all three first guide wires 111 are perpendicular to the plane of the drawing, by Figure 5 (b) Only one of the first conductors 111 parallel to the plane of the drawing can be seen.

[0038] Furthermore, the second conductive structures 13 of each phase-change memory cell 10 located in the same column are connected as second conductive wires 131. Thus, by... Figure 5 (a) Only one of the second conductors 131 parallel to the plane of the drawing can be seen, by Figure 5 (b) All three second conductors 131 perpendicular to the plane of the drawing can be seen.

[0039] In this configuration, the first insulating and heat-conducting structure 16 is connected between the first conductive structures 11 of any two adjacent phase-change memory cells 10 in the same column. The first insulating and heat-conducting structures 16 located between two adjacent rows are connected to form a first insulating heat-conducting body 161, and are connected to the first wires 111 on both sides. Thus, [the following is a description of the first insulating and heat-conducting structure 16]. Figure 5 (a) It can be seen that all two first insulating heat conductors 161 are perpendicular to the plane of the figure, by Figure 5 (b) then the first insulating heat conductor 161 is not visible.

[0040] The conductive and thermally conductive structure 14 is disposed between any two adjacent phase change units 12 of the phase change memory unit 10 in the same column. Each conductive and thermally conductive structure 14 located between two adjacent rows is connected to form a conductive and thermally conductive body 141, and is connected to the first insulating thermally conductive body 161. Thus, by… Figure 5 (a) It can be seen that all two conductive heat conductors 141, perpendicular to the plane of the figure, are connected to the two first insulating heat conductors 161. Figure 5 (b) Then the conductive and heat-conducting body 141 cannot be seen.

[0041] The first insulating and heat-insulating layer 15 is disposed between any two adjacent conductive and heat-conducting structures 14 and phase change units 12 in the same column, and the first insulating and heat-insulating layers 15 located between adjacent rows are continuously distributed along the row direction on both sides of the conductive and heat-conducting body 141. Figure 5 (a) It can be seen that on both sides of each conductive and heat-conducting element 141, a first insulating and heat-insulating layer 15 is provided for insulating and heat-insulating the phase change unit 12 on the corresponding side. Figure 5 (b) In this case, the first insulating heat insulation layer 15 is not visible. The conductive heat conductor 141 can only be located on the corresponding first insulating heat conductor 161 and cannot be in contact with the first wires 111 on both sides of the first insulating heat conductor 161. Therefore, the first insulating heat insulation layer 15 needs to be located at least partially on the first insulating heat conductor 161.

[0042] A second insulating heat-conducting body 191, continuously distributed along the column direction, connects two adjacent columns of second conductive wires 131. The second insulating heat-conducting bodies 191 can be formed by connecting two adjacent second conductive structures 13 together. Thus... Figure 5 (b) Two second insulating heat conductors 191 perpendicular to the plane of the diagram can be seen, by... Figure 5 (a) then the second insulating heat conductor 191 cannot be seen.

[0043] The phase change units 12 of any two adjacent phase change memory units 10 located in the same row are insulated from each other by a second insulating and heat-insulating layer 21. Thus, by Figure 5 (b) Two second insulating and heat-insulating layers 21 located between adjacent phase change units 12 can be seen, which are made of Figure 5 (a) In this case, the second insulating heat insulation layer 21 cannot be seen, and only the first insulating heat insulation layer 15 can be seen.

[0044] Furthermore, the conductive and heat-conducting element 141 is insulated from the second wire 131. For example, the conductive and heat-conducting element 141 and the second wire 131 are insulated from each other by a first dielectric layer 18, such as... Figure 5 As shown in (a).

[0045] Furthermore, a second dielectric layer 20 is provided in the second insulating and heat-insulating layer 21. The top of the second dielectric layer 20 is connected to the second insulating heat conductor 191, and the bottom of the second dielectric layer 20 is isolated from the first conductor 111 through the second insulating and heat-insulating layer 21. Figure 5 As shown in (b).

[0046] As a simple structural example, the phase change unit 12 includes, from bottom to top, a bidirectional threshold switch material layer 121 (OTS), a carbon layer 122, and a phase change material layer 123 (PCM). However, it is not limited to this.

[0047] In other embodiments, the phase change unit 12 does not contain OTS and a carbon layer, such as Figure 4 As shown.

[0048] When the X-axis is a column direction and the Y-axis is a row direction, you can refer to the above content for understanding. You only need to replace the row with column and the column with row in the above content.

[0049] In some embodiments, the two-dimensional storage structure is disposed on an insulating substrate via its first wire 111 and first insulating heat conductor 161.

[0050] In some embodiments, a storage structure of the present invention includes at least two two-dimensional storage structures; the two-dimensional storage structures are stacked sequentially to form a three-dimensional storage structure.

[0051] refer to Figures 6-7It shows an example of a three-dimensional storage structure that stacks the two two-dimensional storage structures mentioned above to form a two-layer structure, where each two-dimensional storage structure has the same... Figure 5 The two two-dimensional memory structures are stacked in a 3×3 phase-change memory cell array, consisting of 3×3 phase-change memory cells 10. The two two-dimensional memory structures are stacked in an opposite direction. Specifically, adjacent two-dimensional memory structures are stacked with a 90-degree offset from each other in the stacking direction (Z-direction), so that the rows on one two-dimensional memory structure correspond to the columns on the other. This ensures that the second conductor 131 on one of the two-dimensional memory structures (in this example, the lower layer) located at the stacking surface is aligned with the first conductor 111 on the other two-dimensional memory structure, forming a shared conductor 22. Furthermore, the phase-change memory cells 10 on the two two-dimensional memory structures correspond to each other in the stacking direction.

[0052] Figure 6 (a) shows a cross-section of three phase-change memory cells 10 in each layer of the two-dimensional memory structure as seen from the X direction (perpendicular to the plane of the drawing). Figure 6 (b) shows a cross section of three phase change memory cells 10 in each layer of the two-dimensional memory structure as seen from the Y direction (perpendicular to the plane of the drawing). Figure 7 The oblique side view of the three-dimensional storage structure is shown, allowing simultaneous viewing of the structure in both the X and Y directions, and comparing it with... Figure 6 (a) and Figure 6 (b) Corresponding.

[0053] and Figure 5 The difference in this embodiment is that, in this embodiment, when the X-direction represents the row direction of the array of a lower-level two-dimensional storage structure (denoted as lower-level two-dimensional storage structure 101) and the Y-direction represents the column direction of the array of a lower-level two-dimensional storage structure, then the column direction of the array of an upper-level two-dimensional storage structure (denoted as upper-level two-dimensional storage structure 102) corresponds to the X-direction, and the row direction of the array of an upper-level two-dimensional storage structure corresponds to the Y-direction. That is, the row direction of the array of lower-level two-dimensional storage structure 101 and the row direction of the array of upper-level two-dimensional storage structure 102 are offset by 90 degrees to each other in a plane perpendicular to the stacking direction, and the column direction of the array of lower-level two-dimensional storage structure 101 and the column direction of the array of upper-level two-dimensional storage structure 102 are also offset by 90 degrees to each other in a plane perpendicular to the stacking direction (a horizontal rotation of 90 degrees).

[0054] After stacking, the first conductor 111 on the bottom surface of the upper two-dimensional storage structure 102 and the second conductor 131 on the top surface of the lower two-dimensional storage structure 101 are aligned in the same direction to form an integral common conductor 22. That is, the second conductor 131 on the lower two-dimensional storage structure 101 is used as the first conductor 111 on the upper two-dimensional storage structure 102, and the second insulating heat conductor 191 on the top surface of the lower two-dimensional storage structure 101 is used as the first insulating heat conductor 161 on the bottom surface of the upper two-dimensional storage structure 102. As an integral common insulating heat conductor 23 formed on the stacking surface, the stacking height can be reduced.

[0055] In some embodiments, the two ends of the conductive and heat-conducting element 141 on the lower two-dimensional storage structure 101 and the two ends of the conductive and heat-conducting element 141 on the upper two-dimensional storage structure 102 are respectively led out to the peripheral circuit. Figure 23 The heat dissipation mechanism of the conductive and heat-conducting element 141 in the three-dimensional storage structure is shown. Figure 23 (a) shows the planar structure of the conductive and heat-conducting body 141 on the lower two-dimensional storage structure 101 arranged along the X direction, which is connected to the peripheral circuit by extension at both ends, and can further conduct excess heat in the lower two-dimensional storage structure 101 through interconnection lines (as shown by the arrow). Figure 23 (b) shows the planar structure of the conductive and heat-conducting element 141 on the upper two-dimensional storage structure 102 arranged along the Y direction, with both ends connected to the peripheral circuitry via extensions. This allows for further heat dissipation from the upper two-dimensional storage structure 102 through interconnecting lines. It can be seen that... Figure 23 (a) The conductive and heat-conducting element 141 on the lower two-dimensional storage structure 101 shown and Figure 23 (b) The conductive and heat-conducting elements 141 on the upper two-dimensional storage structure 102 shown are arranged at 90 degrees orthogonal in orientation.

[0056] In some embodiments, any phase change memory cell 10 on the lower two-dimensional storage structure 101 corresponds vertically to a phase change memory cell 10 on the upper two-dimensional storage structure 102.

[0057] In the X direction, the conductive and heat-conducting elements 141 and the first dielectric layer 18 on the lower two-dimensional storage structure 101 correspond vertically to the second dielectric layer 20 and the second insulating heat-conducting element 191 on the upper two-dimensional storage structure 102 and have the same orientation. In the Y direction, the conductive and heat-conducting elements 141 and the first dielectric layer 18 on the upper two-dimensional storage structure 102 correspond vertically to the second dielectric layer 20 on the lower two-dimensional storage structure 101 and the integrally shared insulating heat-conducting element 23 located on the stacked surface and have the same orientation.

[0058] In the X direction, the first insulating heat conductor 161 on the lower two-dimensional storage structure 101 and the second insulating heat conductor 191 on the upper two-dimensional storage structure 102 are vertically aligned and have the same orientation. The first wire 111 on the lower two-dimensional storage structure 101 and the second wire 131 on the upper two-dimensional storage structure 102 are vertically aligned and have the same orientation.

[0059] In the X direction, the first insulating and heat-insulating layer 15 on the lower two-dimensional storage structure 101 and the second insulating and heat-insulating layer 21 on the upper two-dimensional storage structure 102 are vertically aligned and have the same orientation. In the Y direction, the first insulating and heat-insulating layer 15 on the upper two-dimensional storage structure 102 and the second insulating and heat-insulating layer 21 on the lower two-dimensional storage structure 101 are vertically aligned and have the same orientation.

[0060] In some embodiments, the first conductor 111 on the lowest two-dimensional storage structure serves as a bit line, and the shared conductors 22 thereon and the second conductor 131 on the highest two-dimensional storage structure alternately serve as word lines and bit lines. Alternatively, the first conductor 111 on the lowest two-dimensional storage structure serves as a word line, and the shared conductors 22 thereon and the second conductor 131 on the highest two-dimensional storage structure alternately serve as bit lines and word lines.

[0061] For example in Figures 6-7 In the lower-level two-dimensional storage structure 101, the first conductor 111 serves as a bit line, the integrated common conductor 22 located at the stacking surface serves as a word line, and the second conductor 131 on the upper-level two-dimensional storage structure 102 serves as a bit line. Alternatively, the first conductor 111 on the lower-level two-dimensional storage structure 101 serves as a word line, the integrated common conductor 22 located at the stacking surface serves as a bit line, and the second conductor 131 on the upper-level two-dimensional storage structure 102 serves as a word line.

[0062] In some embodiments, the lower two-dimensional storage structure 101 is disposed on an insulating substrate via its first wire 111 and first insulating heat conductor 161.

[0063] This invention dissipates excess heat from the array gaps by embedding a high thermal conductivity thermally conductive material (conductive thermally conductive body 141) within the array gaps of the three-dimensional storage structure. Insulating thermally conductive materials (first insulating thermally conductive body 161, second insulating thermally conductive body 191) are embedded in the gaps between the word lines and bit lines (first conductor 111, second conductor 131, and integrated common conductor 22). These materials are connected to the aforementioned high thermal conductivity thermally conductive material, allowing excess heat from the phase change unit 12 to be transferred to them through the medium and conductors, thus dissipating heat from the peripheral circuit along the phase change array gaps. The phase change unit 12 is externally wrapped with insulating thermally insulating material (first insulating thermally insulating layer 15, second insulating thermally insulating layer 21), which then contacts the thermally conductive material. All thermally conductive materials and conductors are not electrically conductive. Therefore, excess heat can be dissipated while ensuring the heat required for phase change. This reduces excess heat accumulation and thermal crosstalk, increasing the reliability of the phase change memory.

[0064] The case where three or more two-dimensional storage structures are stacked in a three-dimensional storage structure can be understood by referring to the above embodiments.

[0065] The following detailed description, in conjunction with specific embodiments and accompanying drawings, provides a further detailed explanation of a method for preparing a storage structure according to the present invention.

[0066] refer to Figure 2 A method for fabricating a storage structure according to the present invention includes: At least two phase change memory cells 10 are arranged in parallel, and each phase change memory cell 10 includes a first conductive structure 11, a phase change unit 12, and a second conductive structure 13 in sequence. A first insulating and thermally conductive structure 16 is formed between the first conductive structures 11 of two adjacent phase change memory cells 10; A conductive and thermally conductive structure 14 is formed between two adjacent phase change memory cells 12. The conductive and thermally conductive structure 14 is connected to a first insulating and thermally conductive structure 16 and extends outward. A first insulating and thermally insulating layer 15 is formed between the conductive and thermally conductive structure 14 and the phase change memory cells 10 on both sides.

[0067] refer to Figure 5In some embodiments, a method for fabricating a storage structure according to the present invention further includes: forming a plurality of phase change memory cells 10 arranged in rows and columns to form a two-dimensional storage structure; wherein, the first conductive structures 11 of each phase change memory cell 10 located in the same row are connected to form a first wire 111, the second conductive structures 13 of each phase change memory cell 10 located in the same column are connected to form a second wire 131, a first insulating and thermally conductive structure 16 is connected between any two adjacent first conductive structures 11 of phase change memory cells 10 in the same column, each first insulating and thermally conductive structure 16 located between two adjacent rows is connected to form a first insulating and thermally conductive body 161 and connected to the first wires 111 on both sides, and a conductive and thermally conductive structure 14 is disposed between any two adjacent... Between the phase change units 12 of the phase change memory unit 10, each conductive and heat-conducting structure 14 located between two adjacent rows is connected to form a conductive and heat-conducting body 141, and is connected to a first insulating heat-conducting body 161. A first insulating heat-insulating layer 15 is disposed between any two adjacent conductive and heat-conducting structures 14 and phase change units 12 in the same column. Each first insulating heat-insulating layer 15 located between two adjacent rows is continuously distributed along the row direction on both sides of the conductive heat-conducting body 141. A second insulating heat-conducting body 191 continuously distributed along the column direction is connected between the second conductors 131 of two adjacent columns. The phase change units 12 of any two adjacent phase change memory units 10 located in the same row are insulated and isolated from each other by the second insulating heat-insulating layer 21. The conductive heat-conducting body 141 is insulated and isolated from the second conductors 131.

[0068] The rows and columns in the above embodiments can be interchanged.

[0069] refer to Figures 8-22 In some embodiments, the method for forming a two-dimensional storage structure includes the following steps in sequence (taking the formation of an array of 3×3 phase-change memory cells 10 as an example): Step S1: Form the first conductor layer 1111.

[0070] like Figure 8 As shown, a first conductive layer 1111 is deposited on the surface of an insulating substrate 100.

[0071] In some embodiments, the insulating substrate 100 includes a third dielectric layer or a third insulating thermally conductive layer. The material of the third dielectric layer includes, but is not limited to, silicon dioxide (the same applies when referring to dielectric materials below). The material of the third insulating thermally conductive layer is an insulating thermally conductive material, including, but not limited to, alumina, hexagonal boron nitride, and other insulating materials with good thermal conductivity (the same applies when referring to insulating thermally conductive materials below). When the substrate 100 is an insulating thermally conductive material, the heat dissipation effect is better.

[0072] The material of the first conductor layer 1111 includes, but is not limited to, metallic tungsten (the same applies when referring to conductor layer materials below).

[0073] Step S2: The first conductor layer 1111 is patterned to form a plurality of first conductors 111 with gaps distributed along the X direction.

[0074] like Figure 9 As shown, along the X direction, the first conductive layer 1111 is photolithographically and etched on the insulating substrate 100. Figures 9-22 The insulating substrate 100 has three patterned first conductors 111 with a gap distribution along the X direction on its surface (omitted), exposing the surface of the insulating substrate 100 located between the first conductors 111.

[0075] Step S3: Form a first insulating heat conductor 161 in the gap between each first conductor 111, which is distributed along the X direction and connected to the first conductor 111.

[0076] like Figure 9 As shown, an insulating and thermally conductive material is deposited on the surface of the structure formed above, and excess insulating and thermally conductive material is removed by chemical mechanical polishing (CMP). A first insulating and thermally conductive body 161 is formed in the gap between each first conductor 111, distributed along the X direction and connected to the first conductor 111, exposing the surface of the first conductor 111.

[0077] Step S4: A phase change unit layer 1211 is formed on the surface of the first conductor 111 and the surface of the first insulating heat conductor 161.

[0078] like Figure 10 As shown, a phase change unit layer 1211 is deposited on the surface of the structure formed above. As a simple structural example, a bidirectional threshold switch material layer 121 (OTS), a carbon layer 122, and a phase change material layer 123 (PCM) are sequentially deposited on the surface of the structure formed above to construct a 1S1R structure and form a phase change unit layer 1211. However, it is understood that the 1S1R structure is not limited to the above-described film structure.

[0079] The OTS and PCM are separated by a carbon layer 122, and their top and bottom positions can be reversed. When the PCM material is on the bottom, Joule heat is easily lost through the bit lines, so having the OTS material on the bottom is the preferred option.

[0080] Step S5: The phase change unit layer 1211 is patterned to form multiple phase change unit bodies 1212 with gaps distributed along the Y direction.

[0081] like Figure 11 As shown, the phase change unit layer 1211 is photolithographically and etched along the Y direction to form three patterned phase change unit bodies 1212 with gaps distributed along the Y direction, exposing the surface of the first wire 111 located between the phase change unit bodies 1212 and distributed along the X direction and the surface of the first insulating heat conductor 161.

[0082] Step S6: A second insulating and heat-insulating layer 21 is formed in the gap between each phase change unit 1212 along the Y direction on the side wall of the phase change unit 1212 and the surface of the first conductor 111, and a second dielectric layer 20 is filled in the gap between each phase change unit 1212 within the second insulating and heat-insulating layer 21.

[0083] like Figure 12 As shown, an insulating and heat-insulating material is deposited on the surface of the structure formed above using a deposition process. The insulating and heat-insulating material is deposited on the sidewalls of the phase change unit 1212 on both sides of the gap, and on the surface of the exposed first conductor 111 and the surface of the first insulating heat conductor 161, but the gap is not filled.

[0084] Then, a deposition process is used to fill the remaining gaps within the aforementioned insulating and heat-insulating material with the second dielectric layer 20 material, and CMP is used to remove the excess insulating and heat-insulating material and dielectric material above, exposing the surface of the phase change unit 1212, forming a second insulating and heat-insulating layer 21 along the Y direction between two adjacent phase change unit 1212, and a second dielectric layer 20 filled in the second insulating and heat-insulating layer 21.

[0085] Insulating and heat-insulating materials include, but are not limited to, silicon nitride, nano-silica particles, aerogel, polystyrene, polyurethane, etc. (the same applies when referring to insulating and heat-insulating materials below).

[0086] Step S7: The phase change unit body 1212 is patterned to form multiple phase change units 12 distributed in an array along the X and Y directions, exposing the surface of the first insulating heat conductor 161.

[0087] like Figure 13 As shown, the phase change unit body 1212 is photolithographically and etched along the X direction, forming three phase change units 12 on each first wire 111, and exposing the surface of the first insulating heat conductor 161 in the X direction. This forms nine phase change units 12 (an array of 3×3 phase change units 12).

[0088] The morphology of phase transition unit 12 in the Y direction can be found in [reference]. Figure 12 To understand.

[0089] Step S8: Form a first insulating and heat-insulating layer 15 continuously distributed along the X direction on the sidewalls of any two adjacent phase change units 12 along the X direction, and form a conductive and heat-conducting body 141 continuously distributed along the X direction between adjacent first insulating and heat-insulating layers 15, and make the top of the conductive and heat-conducting body 141 lower than the top of the first insulating and heat-insulating layer 15.

[0090] like Figure 14As shown, an insulating and heat-insulating material is deposited again on the surface of the structure formed above using a deposition process. This material is deposited on the sidewalls of two adjacent phase change units 12 along the X-direction and on the exposed surface of the first insulating heat conductor 161, but the gap between the two adjacent phase change units 12 is not filled. Then, an etch back is performed to remove the insulating and heat-insulating material from the surfaces of the phase change units 12 and the first insulating heat conductor 161, exposing the surface of the first insulating heat conductor 161. This results in the formation of a first insulating and heat-insulating layer 15 continuously distributed along the X-direction on the opposite sidewalls of two adjacent phase change units 12.

[0091] like Figure 15 As shown, a deposition process is used to continue filling the remaining gaps within the two adjacent first insulating and heat-insulating layers 15 with conductive and thermally conductive material. Then, an etch-back process is performed to remove the conductive and thermally conductive material on the surface of the phase change unit 12. The top height of the remaining conductive and thermally conductive material within the two adjacent first insulating and heat-insulating layers 15 is lower than the surface height of the phase change unit 12 and the top height of the first insulating and heat-insulating layer 15 (this structure is to prevent the conductive and thermally conductive material from contacting the second wire 131 subsequently formed on top, which could lead to short circuits and other problems). A conductive and thermally conductive body 141 continuously distributed along the X direction is formed between two adjacent phase change units 12.

[0092] In some embodiments, the conductive and thermally conductive materials include metals such as tungsten, silver, and copper.

[0093] Step S9: A first dielectric layer 18 is formed on the top of the conductive and heat-conducting body 141, and the surfaces of the first dielectric layer 18, the phase change unit 12, and the first insulating and heat-insulating layer 15 are formed flush with each other, and then a second conductor layer 1311 is deposited.

[0094] like Figure 16 As shown, a deposition process is used to deposit a first dielectric layer 18 material on the surface of the structure formed above, filling the remaining voids on the top of the conductive and heat-conducting body 141. Then, CMP is performed to flatten the surface and expose the surface of the phase change unit 12, forming the first dielectric layer 18 along the X direction on the top of the conductive and heat-conducting body 141. Next, a second conductive layer 1311 is deposited to form.

[0095] At this time, the conductive and heat-conducting body 141 and the second conductor layer 1311 are separated by the insulating first dielectric layer 18.

[0096] Step S10: The second conductor layer 1311 is patterned to form a plurality of second conductors 131 with gaps distributed along the Y direction.

[0097] like Figure 17As shown, the second conductor layer 1311 is photolithographically and etched along the Y direction to form three patterned second conductors 131 with gaps distributed along the Y direction on the surface of the phase change unit 12, exposing the surface of the second insulating and heat-insulating layer 21 and the surface of the second dielectric layer 20 located between adjacent second conductors 131.

[0098] Step S11: A second insulating heat conductor 191 is formed in the gap between each second conductor 131, distributed along the Y direction and connected to the second conductor 131.

[0099] like Figure 17 As shown, an insulating and thermally conductive material is deposited on the surface of the structure formed above using a deposition process, and excess insulating and thermally conductive material is removed using CMP. A second insulating and thermally conductive body 191 is formed in the gap between each second conductor 131, distributed along the Y direction and connected to the second conductor 131, exposing the surface of the second conductor 131.

[0100] At this point, the construction of one two-dimensional storage structure is complete. The fabricated two-dimensional storage structure and... Figure 5 The two-dimensional storage structure shown corresponds to this.

[0101] As an example, the X direction is defined as the row direction of the array of the two-dimensional storage structure formed above, and the Y direction is the column direction.

[0102] Furthermore, using the same method, a second two-dimensional storage structure (i.e., an upper two-dimensional storage structure 102) can be formed on top of the first two-dimensional storage structure (i.e., the lower two-dimensional storage structure 101) to prepare a two-layer three-dimensional storage structure formed by stacking two two-dimensional storage structures. Specifically, the following steps can be taken: Step S12: Using the second conductor 131 as an integral common conductor 22 and the second insulating heat conductor 191 as an integral common insulating heat conductor 23, a phase change unit layer 1211 is formed on the surface of the integral common conductor 22 and the surface of the integral common insulating heat conductor 23.

[0103] like Figure 18 As shown, the second conductor 131 of the lower two-dimensional storage structure 101 is shared as the first conductor 111 of the upper two-dimensional storage structure 102, serving as an integral shared conductor 22 formed on the stacked surface; the second insulating heat conductor 191 of the lower two-dimensional storage structure 101 is shared as the first insulating heat conductor 161 of the upper two-dimensional storage structure 102, serving as an integral shared insulating heat conductor 23 formed on the stacked surface. Based on this, the phase change unit layer 1211 of the upper two-dimensional storage structure 102 is deposited on the surface of the integral shared conductor 22 and the surface of the integral shared insulating heat conductor 23 using the method in step S4.

[0104] Step S13: The phase change unit layer 1211 is patterned to form multiple phase change unit bodies 1212 with gaps distributed along the X direction.

[0105] like Figure 19 As shown, using the method in step S5, photolithography and etching are performed on the phase change unit layer 1211 along the X direction to form three patterned upper two-dimensional storage structure 102 phase change unit bodies 1212 with gaps distributed along the X direction, exposing the surface of the integrated common conductor 22 located between the phase change unit bodies 1212 and distributed along the Y direction and the surface of the integrated common insulating heat conductor 23.

[0106] Step S14: A second insulating and heat-insulating layer 21 is formed in the gap between each phase change unit 1212 along the X direction on the side wall of the phase change unit 1212 and the surface of the integral common conductor 22, and a second dielectric layer 20 is filled in the gap between each phase change unit 1212 within the second insulating and heat-insulating layer 21.

[0107] like Figure 20 As shown, the method in step S6 is used to form a second insulating and heat-insulating layer 21 and a second dielectric layer 20 of the upper two-dimensional storage structure 102 that are continuously distributed along the X direction.

[0108] Step S15: The phase change unit body 1212 is patterned to form multiple phase change units 12 distributed in an array along the X and Y directions, exposing the surface of the integrated common insulating heat conductor 23.

[0109] like Figure 21 As shown, using the method in step S7, photolithography and etching are performed on the phase change unit body 1212 along the Y direction to form three phase change units 12 of the upper two-dimensional memory structure 102 on each integrated common conductor 22, and the surface of the integrated common insulating heat conductor 23 is exposed in the Y direction. In this way, nine phase change units 12 of the upper two-dimensional memory structure 102 (an array of 3×3 phase change units 12) are formed.

[0110] Step S16: Form a first insulating and heat-insulating layer 15 continuously distributed along the Y direction on the sidewalls of any two adjacent phase change units 12 along the Y direction, and form a conductive and heat-conducting body 141 continuously distributed along the Y direction between adjacent first insulating and heat-insulating layers 15, and make the top of the conductive and heat-conducting body 141 lower than the top of the first insulating and heat-insulating layer 15.

[0111] like Figure 22 As shown, the method in step S8 is used to form a first insulating and heat-insulating layer 15 and a conductive and heat-conducting body 141 that are continuously distributed along the Y direction.

[0112] Step S17: A first dielectric layer 18 is formed on the top of the conductive and heat-conducting body 141, and the surfaces of the first dielectric layer 18, the phase change unit 12, and the first insulating and heat-insulating layer 15 are formed flush with each other, and then a second conductor layer 1311 is deposited.

[0113] like Figure 22 As shown, using the method in step S9, a first dielectric layer 18 continuously distributed along the Y direction is formed on the top of the conductive and heat-conducting body 141. A second conductive layer 1311 is also formed.

[0114] Step S18: The second conductor layer 1311 is patterned to form a plurality of second conductors 131 with gaps distributed along the X direction, and a second insulating heat conductor 191 distributed along the X direction and connected to the second conductors 131 is formed in the gaps between each second conductor 131.

[0115] like Figure 22 As shown, using step S10, three second conductors 131 with gaps distributed along the X direction are formed. Using step S11, two second insulating heat conductors 191 with gaps distributed along the X direction are formed, thereby forming an upper two-dimensional storage structure 102 on the lower two-dimensional storage structure 101 (see reference). Figure 6 ).

[0116] In this structure, the column direction of the array in the upper two-dimensional storage structure 102 corresponds to the X-axis, and the row direction of the array in the upper two-dimensional storage structure 102 corresponds to the Y-axis. The fabricated two-layer three-dimensional storage structure... Figure 6 and Figure 7 The three-dimensional storage structure shown corresponds to this.

[0117] In summary, this invention, by connecting a first insulating and heat-conducting structure 16 between the first conductive structures 11 of two adjacent phase change memory cells 10 in the memory structure, and by setting a conductive and heat-conducting structure 14 connected to the first insulating and heat-conducting structure 16 between the phase change cells 12 of two adjacent phase change memory cells 10, and insulating the conductive and heat-conducting structure 14 from the phase change memory cells 10 through a first insulating and heat-insulating layer 15, can transfer excess heat other than the heat used for phase change in the phase change cells 12 to the conductive and heat-conducting structure 14, and further transfer it to the outside for exhaust. This effectively dissipates excess phase change heat while meeting the heat requirements for normal operation of the memory structure, reducing excess heat accumulation and thermal crosstalk, thus increasing operational reliability. The above structure can be further applied to array-type two-dimensional and three-dimensional memory structures.

[0118] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A storage structure, characterized in that, include: At least two phase change memory cells are arranged side by side. Each phase change memory cell includes a first conductive structure, a phase change cell, and a second conductive structure in sequence. A first insulating and thermally conductive structure is connected between the first conductive structures of two adjacent phase change memory cells. A conductive and thermally conductive structure is provided between the phase change cells of two adjacent phase change memory cells. The conductive and thermally conductive structure is connected to the first insulating and thermally conductive structure. The conductive and thermally conductive structure is insulated and isolated from the phase change memory cells on both sides by a first insulating and thermally insulating layer and is led outward.

2. The storage structure according to claim 1, characterized in that, Multiple phase-change memory cells are arranged in rows and columns to form an array, creating a two-dimensional storage structure. The first conductive structures of each phase-change memory cell in a row are connected to form a first wire, and the second conductive structures of each phase-change memory cell in a column are connected to form a second wire. A first insulating and thermally conductive structure is connected between the first conductive structures of any two adjacent phase-change memory cells in the same column. The first insulating and thermally conductive structures between adjacent rows are connected to form a first insulating heat conductor and are connected to the first wires on both sides. The conductive and thermally conductive structures are located between any two adjacent phase-change memory cells in the same column. Between the phase change units of the unit, the conductive and thermally conductive structures located between adjacent rows are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change units in the same column. The first insulating thermal insulation layers located between adjacent rows are continuously distributed along the row direction on both sides of the conductive and thermally conductive body. The second conductors in adjacent columns are connected by second insulating thermally conductive bodies continuously distributed along the column direction. The phase change units of any two adjacent phase change memory units in the same row are insulated and isolated from each other by the second insulating thermal insulation layer. The body is insulated from the second conductor, or, the first conductive structures of each phase change memory cell in the same column are connected as a first conductor, and the second conductive structures of each phase change memory cell in the same row are connected as a second conductor. The first insulating thermally conductive structure is connected between any two adjacent phase change memory cells in the same row, and the first insulating thermally conductive structures between two adjacent columns are connected as a first insulating thermally conductive body and connected to the first conductors on both sides. The conductive thermally conductive structure is disposed between any two adjacent phase change memory cells in the same row, located in the phase change... The conductive and thermally conductive structures between two adjacent columns are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change unit in the same row. The first insulating thermal insulation layers located between two adjacent columns are continuously distributed along the column direction on both sides of the conductive and thermally conductive body. The second insulating thermally conductive body continuously distributed along the row direction is connected between the second conductors of two adjacent rows. The phase change units of any two adjacent phase change storage units in the same column are insulated and isolated from each other by the second insulating thermal insulation layer. The conductive and thermally conductive body is insulated and isolated from the second conductor.

3. The storage structure according to claim 2, characterized in that, The conductive and heat-conducting body is insulated from the second wire by a first dielectric layer.

4. The storage structure according to claim 3, characterized in that, The second insulating and heat-insulating layer includes a second dielectric layer, which is connected to the second insulating heat conductor and is isolated from the first conductor through the second insulating and heat-insulating layer.

5. The storage structure according to claim 4, characterized in that, At least two of the two-dimensional storage structures are stacked sequentially to form a three-dimensional storage structure, wherein adjacent two two-dimensional storage structures are stacked with a 90-degree offset from each other in the stacking direction, such that the row on one corresponds to the column on the other, and the second wire on one of the stacked surfaces is aligned with the first wire on the other as a single shared wire, and each phase change memory cell on the adjacent two two-dimensional storage structures corresponds to each other in the stacking direction.

6. The storage structure according to claim 5, characterized in that, The last two-dimensional storage structure is disposed on an insulating substrate via its first conductor. The first conductor on any upper two-dimensional storage structure and the second conductor on the adjacent lower two-dimensional storage structure are aligned in the same direction to form an integrated common conductor. The two ends of the conductive and heat-conducting body are led out to the peripheral circuit. The first conductor on the last two-dimensional storage structure serves as a bit line, and the integrated common conductors on it and the second conductor on the uppermost two-dimensional storage structure alternately serve as word lines and bit lines. Alternatively, the first conductor on the last two-dimensional storage structure serves as a word line, and the integrated common conductors on it and the second conductor on the uppermost two-dimensional storage structure alternately serve as bit lines and word lines.

7. A method for fabricating a storage structure, characterized in that, include: At least two phase change memory cells are arranged side by side, and each phase change memory cell sequentially includes a first conductive structure, a phase change unit, and a second conductive structure; A first insulating and thermally conductive structure is formed between the first conductive structures of two adjacent phase-change memory cells; A conductive and thermally conductive structure is formed between two adjacent phase change memory cells. The conductive and thermally conductive structure is connected to the first insulating and thermally conductive structure and extends outward. A first insulating and thermally insulating layer is formed between the conductive and thermally conductive structure and the phase change memory cells on both sides.

8. The method for fabricating the storage structure according to claim 7, characterized in that, Further includes: Multiple phase-change memory cells are arranged in an array in rows and columns to form a two-dimensional memory structure. The first conductive structures of each phase-change memory cell in a row are connected to form a first wire; the second conductive structures of each phase-change memory cell in a column are connected to form a second wire; a first insulating and thermally conductive structure is connected between the first conductive structures of any two adjacent phase-change memory cells in the same column; the first insulating and thermally conductive structures between two adjacent rows are connected to form a first insulating heat conductor and connected to the first wires on both sides. The conductive and thermally conductive structures are located between any two adjacent phase-change memory cells in the same column. Between the phase change units of the storage cell, the conductive and thermally conductive structures located between adjacent rows are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change units in the same column. The first insulating thermal insulation layers located between adjacent rows are continuously distributed along the row direction on both sides of the conductive and thermally conductive body. The second conductors in adjacent columns are connected by second insulating thermally conductive bodies continuously distributed along the column direction. The phase change units of any two adjacent phase change storage cells in the same row are insulated and isolated from each other by the second insulating thermal insulation layer. The heat conductor is insulated from the second conductor. Alternatively, the first conductive structures of each phase change memory cell in the same column are connected as a first conductor, and the second conductive structures of each phase change memory cell in the same row are connected as a second conductor. The first insulating heat-conducting structure is connected between the first conductive structures of any two adjacent phase change memory cells in the same row. The first insulating heat-conducting structures between two adjacent columns are connected as a first insulating heat conductor and connected to the first conductors on both sides. The conductive heat-conducting structure is located between any two adjacent phase change memory cells in the same row. The conductive and thermally conductive structures between two adjacent columns are connected to form a conductive and thermally conductive body, and are connected to the first insulating thermally conductive body. The first insulating thermal insulation layer is disposed between any two adjacent conductive and thermally conductive structures and the phase change unit in the same row. The first insulating thermal insulation layers located between two adjacent columns are continuously distributed along the column direction on both sides of the conductive and thermally conductive body. The second insulating thermally conductive body continuously distributed along the row direction is connected between the second conductors of two adjacent rows. The phase change units of any two adjacent phase change storage units in the same column are insulated and isolated from each other by the second insulating thermal insulation layer. The conductive and thermally conductive body is insulated and isolated from the second conductor.

9. The method for fabricating the storage structure according to claim 8, characterized in that, The formation of the two-dimensional storage structure specifically includes: Form the first conductive layer; The first conductor layer is patterned to form multiple first conductors with gaps distributed along the X direction; A first insulating heat-conducting body is formed in the gap between each of the first wires, distributed along the X direction and connected to the first wires; A phase change unit layer is formed on the surface of the first conductor and on the surface of the first insulating heat conductor; The phase change unit layer is patterned to form multiple phase change unit bodies with gaps distributed along the Y direction; A second insulating and heat-insulating layer is formed in the gap between each phase change unit body along the Y direction on the sidewall of the phase change unit body and the surface of the first conductor, and a second dielectric layer is filled in the gap between each phase change unit body within the second insulating and heat-insulating layer; The phase change unit body is patterned to form multiple phase change units distributed in an array along the X and Y directions, exposing the surface of the first insulating heat conductor; A first insulating and heat-insulating layer is formed continuously along the X direction on the sidewalls of any two adjacent phase change units along the X direction, and a conductive and heat-conducting body is formed continuously along the X direction between adjacent first insulating and heat-insulating layers, with the top of the conductive and heat-conducting body being lower than the top of the first insulating and heat-insulating layer. A first dielectric layer is formed on the top of the conductive and heat-conducting body, and the surfaces of the first dielectric layer, the phase change unit, and the first insulating and heat-insulating layer are formed flush with each other, and then a second conductive layer is deposited. The second conductor layer is patterned to form multiple second conductors with gaps distributed along the Y direction; A second insulating heat conductor is formed in the gap between each of the second conductors, distributed along the Y direction and connected to the second conductors; The X direction is the row direction, and the Y direction is the column direction; or, the X direction is the column direction, and the Y direction is the row direction.

10. The method for fabricating the storage structure according to claim 9, characterized in that, Also includes: Using the same method, at least two two-dimensional storage structures are formed, and the two-dimensional storage structures are stacked sequentially to form a three-dimensional storage structure. The two adjacent two-dimensional storage structures are stacked with a 90-degree offset from each other in the stacking direction, so that the row on one corresponds to the column on the other, and the second conductor on one of the stacked surfaces is aligned with the first conductor on the other as a single common conductor. The phase change memory cells on the two adjacent two-dimensional storage structures are corresponding to each other in the stacking direction. The last two-dimensional storage structure is disposed on an insulating substrate through its first conductor. The insulating substrate includes a third dielectric layer or a third insulating thermally conductive layer.

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