A cleaning method for etching residue of an antireflection layer

Abstract

The present application belongs to the technical field of wet cleaning in the integrated circuit manufacturing industry, and particularly relates to a cleaning method for etching residues of an anti-reflection layer. The steps of the present application are as follows: step one, cleaning the wafer with a pre-cleaning agent, and the cleaning temperature is 40-60 DEG C; step two, rinsing with deionized water; step three, cleaning with a corresponding cleaning agent; and step four, cleaning with deionized water. The present application provides a cleaning method for etching residues in the back-end-of-line, which can effectively improve the cleaning effect and reduce the amount of chemicals used in the cleaning process.

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