Oligomer films for bottom-up gapfill processes

By selectively depositing flowable oligomer films on semiconductor substrates and controlling monomer concentration, the problem of uneven protection of the substrate surface in the prior art is solved, and uniform filling and efficient gap filling in different critical size characteristics are achieved.

CN122123181APending Publication Date: 2026-05-29APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2024-10-04
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Existing technologies struggle to selectively protect substrate surfaces in semiconductor manufacturing, particularly on the bottom and sidewalls of features, and existing methods are sensitive to critical size changes, leading to uneven gap filling.

Method used

A flowable oligomer membrane is selectively deposited within the feature, and by controlling the monomer concentration and purge time, the oligomer membrane is ensured to form on the bottom and fill a portion of the feature depth, while metal material is removed from the top surface and sidewalls.

Benefits of technology

This technology achieves uniform height filling of oligomeric films in features with different critical dimensions, reduces residues on the top surface and sidewalls, and improves process efficiency and semiconductor device quality.

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Abstract

Embodiments of the present disclosure relate to methods of protecting a substrate surface using an oligomer film. The oligomer film is formed on the substrate surface having a first feature and a second feature, each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film is selectively formed on a bottom and fills a portion of the feature depth. The oligomer film fills the feature depth in each of the first feature and the second feature to substantially the same or the same height. Methods of forming a semiconductor element using the oligomer film are also disclosed.
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