一种Ni单原子 / 磷 / g-C3N4复合材料及其制备方法与应用

By doping phosphorus and Ni single atoms into graphitic carbon nitride (g-C3N4), a Ni single atom/phosphorus/g-C3N4 composite material was formed, which solved the problems of narrow photoresponse range and high recombination rate of photogenerated carriers, and achieved efficient photocatalytic water splitting to produce hydrogen.

CN122124843BActive Publication Date: 2026-07-17SHANDONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANDONG UNIV
Filing Date
2026-04-30
Publication Date
2026-07-17

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Abstract

本发明涉及光催化剂技术领域，具体涉及一种Ni单原子 / 磷 / g‑C3N4复合材料及其制备方法与应用。本发明提供的Ni单原子 / 磷 / g‑C3N4复合材料，以中空管状g‑C3N4为基体，同时掺杂磷和Ni单原子。结果表明同时掺杂磷和Ni单原子能够有效调控g‑C3N4电子构型，拓展可见光吸收，并促进电荷分离与转移。Ni单原子 / 磷 / g‑C3N4复合材料的产氢速率可达2707.7μmol h‑1g‑1，分别约为纯g‑C3N4（615.4μmol h‑1g‑1）、磷掺杂g‑C3N4复合材料（1602.2μmol h‑1g‑1）和Ni单原子掺杂g‑C3N4复合材料的4.4、1.7和1.5倍；其在400 nm下的表观量子效率为8.8%，并在6个光催化产氢循环中表现出优异稳定性。
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