A method for processing through holes in TGV glass

Abstract

This invention relates to a method for processing through-holes in TGV glass, belonging to the field of communication packaging technology. The method includes: setting protective layers with a thickness of 0.1-100 μm on the upper and lower surfaces of a glass substrate, followed by laser induction and etching to form through-holes; wherein the protective layer comprises at least one of a plastic layer, a resin layer, or an adhesive layer. The processing method provided by this invention, by setting a protective layer on the glass substrate surface before laser induction and etching, allows the protective layer to resist corrosion by the etching solution and to be burned through during laser modification, without affecting the etching of the TGV through-hole, thereby improving the hole shape of the TGV through-hole and forming a through-hole. Simultaneously, the protective layer ensures that the glass thickness remains consistent regardless of the etching time when etching TGVs of different diameters, guaranteeing that the original glass thickness is retained when the TGV through-hole is completed, without affecting the product's structural reliability and improving the production efficiency of TGV glass.

Description

Technical Field

[0001] This invention relates to the field of communication packaging technology, and specifically to a method for processing a through-hole in TGV glass. Background Technology

[0002] Currently, TGV glass through-hole technology allows circuit connections between the top and bottom surfaces of glass, forming a glass substrate. However, during glass etching, funnel-shaped holes are easily formed, or the glass surface is corroded by HF acid or alkali, resulting in a reduction in the thickness of the glass substrate.

[0003] Existing technologies achieve the fabrication of through-hole TGV glass by improving the preparation process and optimizing the etching and laser-induced processes. For example, CN120155681A discloses a method and system for processing through-holes in glass using ultrafast lasers, including the following steps: bonding three glass workpieces together to form a sandwich workpiece using photoresist; focusing the Bessel beam onto the sandwich workpiece by adjusting the Bessel beam length; irradiating the sandwich workpiece with an ultrafast laser, causing the material structure of the internal region of the glass to change from a six-membered silicon-oxygen ring to a three-membered or four-membered silicon-oxygen ring, resulting in a sandwich workpiece with a modified microarray region penetrating vertically; separating the laser-processed sandwich workpiece by removing the photoresist, retaining only the target workpiece in the middle; immersing the target workpiece in an etching solution and introducing ultrasonic oscillation for etching, where the three-membered or four-membered silicon-oxygen rings in the modified microarray region are etched by the etchant, forming micro-through holes; and cleaning the etched target workpiece.

[0004] CN120613267A describes a method where a circular laser reflective layer pattern is first fabricated on a TGV glass substrate. The diameter of the laser-induced spot is between the inner and outer diameters of the laser reflective layer pattern. When laser induction is applied to the TGV glass substrate, the spot in the laser-induced area coincides with the center of the circular laser reflective layer. Therefore, due to the limitation of the laser reflective pattern, the size of the laser-induced area is consistent. Even if there are slight fluctuations in the size of the induced laser spot, the uniformity of the final TGV via can be guaranteed.

[0005] However, the current improvement process is still quite complex, which is not conducive to the efficient preparation of through holes in TGV glass. At the same time, it is impossible to simultaneously achieve the formation of through holes and avoid the glass surface being eroded by HF acid or alkali. Summary of the Invention

[0006] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for processing through holes in TGV glass, so as to achieve efficient preparation of through-hole TGV glass, and to process through holes while avoiding thinning caused by etching solution erosion of the glass surface.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] This invention provides a method for processing through holes in TGV glass, the method comprising:

[0009] Protective layers with a thickness of 0.1-100 μm are set on the upper and lower surfaces of the glass substrate, respectively, and then laser induction and etching are performed sequentially to form through holes;

[0010] The protective layer includes one or a combination of at least two of the following: a plastic layer, a resin layer, or an adhesive layer.

[0011] The processing method provided by the present invention involves laser induction and etching after setting a specific protective layer on the surface of the glass substrate. The protective layer can resist the corrosion of the etching solution and will be burned through during laser modification without affecting the etching of the TGV through hole, thereby improving the hole shape of the TGV through hole to form a straight through hole.

[0012] As a preferred embodiment of the present invention, the plastic layer comprises: a polytetrafluoroethylene layer and / or a parylene layer.

[0013] As a preferred embodiment of the present invention, the resin layer comprises: an epoxy resin layer and / or an ethylene-chlorotrifluoroethylene copolymer resin layer.

[0014] As a preferred embodiment of the present invention, the adhesive layer comprises: a perfluoroether rubber layer and / or a fluorosilicone layer.

[0015] As a preferred technical solution of the present invention, the protective layer is provided by means of coating and / or chemical vapor deposition.

[0016] As a preferred technical solution of the present invention, the laser used in the laser induction includes: femtosecond laser or picosecond laser with a wavelength of 515-1660nm.

[0017] As a preferred embodiment of the present invention, the frequency of the laser used for laser induction is 1-2 kHz.

[0018] As a preferred embodiment of the present invention, the power of the laser used in the laser induction is 10-100W.

[0019] As a preferred technical solution of the present invention, the etching solution used in the etching includes: HF acid etching solution or alkaline etching solution.

[0020] As a preferred embodiment of the present invention, the etching temperature is 25-60℃.

[0021] Preferably, the etching time is 4-48 hours.

[0022] Compared with existing technical solutions, the present invention has the following beneficial effects:

[0023] (1) The processing method provided by the present invention provides that by setting a specific protective layer on the glass substrate, the glass substrate can obtain a good through hole after laser induction and etching, and the diameter change along the depth direction of the through hole is <0.1μm.

[0024] (2) HF will also corrode unmodified glass during etching. For example, after etching the TGV through hole, the thickness of 1.0 mm thick glass is reduced to 0.8 mm. The processing method provided by this invention can retain the original glass thickness when completing the TGV through hole, so that the glass thickness will not be different due to different etching time when etching TGV of different diameters, thus affecting the reliability of the product structure and improving the production efficiency of TGV glass. Attached Figure Description

[0025] Figure 1 This is a SEM image of the TGV glass through-hole obtained in Embodiment 1 of the present invention;

[0026] Figure 2 This is a SEM image of the TGV glass through-hole obtained in Comparative Example 1 of this invention;

[0027] Figure 3 This is a SEM image of the TGV glass through-hole obtained in Comparative Example 3 of this invention.

[0028] The present invention will now be described in further detail. However, the examples described below are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims. Detailed Implementation

[0029] To better illustrate the present invention and facilitate understanding of its technical solutions, typical but non-limiting embodiments of the present invention are as follows:

[0030] Currently, TGV glass is prone to forming funnel-shaped holes during etching, which is detrimental to subsequent metal filling, electrical interconnect reliability, and packaging density. Therefore, this invention addresses this issue by applying a specific protective layer to the glass substrate surface before laser-induced etching. This protective layer resists corrosion from the etching solution and is burned through during laser modification, without affecting the etching of TGV vias. This improves the via shape, forming straight-through vias, as detailed below:

[0031] This embodiment provides a method for processing a through hole in TGV glass, the method comprising:

[0032] Protective layers with a thickness of 0.1-100 μm are formed on the upper and lower surfaces of the glass substrate, respectively, followed by laser induction and etching to form through holes.

[0033] In this invention, the thickness of the glass substrate can be reasonably selected according to actual needs, for example, 50-550μm, such as 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 120μm, 140μm, 160μm, 180μm, 200μm, 220μm, 240μm, 260μm, 280μm, 300μm, 320μm, 340μm, 360μm, 380μm, 400μm, 420μm, 440μm, 460μm, 480μm, 500μm, 520μm, 540μm or 550μm, but is not limited to the listed values, other unlisted values ​​within this range also meet the requirements.

[0034] In this invention, the thickness of the protective layer is 0.1-100μm, for example, it can be 0.1μm, 0.2μm, 0.4μm, 0.6μm, 0.8μm, 1μm, 2μm, 4μm, 6μm, 8μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm or 100μm, but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0035] The protective layer includes one or a combination of at least two of the following: a plastic layer, a resin layer, or an adhesive layer.

[0036] The plastic layer includes a polytetrafluoroethylene layer and / or a parylene layer.

[0037] The resin layer includes: an epoxy resin layer and / or an ethylene-chlorotrifluoroethylene copolymer resin layer.

[0038] The adhesive layer includes: a perfluoroether rubber layer and / or a fluorosilicone layer.

[0039] The protective layer can be configured by coating and / or chemical vapor deposition.

[0040] The laser used in the laser induction includes femtosecond lasers or picosecond lasers with wavelengths of 515-1660nm.

[0041] The frequency of the laser used for laser induction is 1-2kHz, for example, it can be 1kHz, 1.1kHz, 1.2kHz, 1.3kHz, 1.4kHz, 1.5kHz, 1.6kHz, 1.7kHz, 1.8kHz, 1.9kHz or 2kHz, but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0042] The power of the laser used in the laser induction is 10-100W, for example, it can be 10W, 19W, 28W, 37W, 46W, 55W, 64W, 73W, 82W, 91W or 100W, but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0043] The etching solution used in the etching process includes: HF acid etching solution or alkaline etching solution.

[0044] For example, the HF etching solution can be selected as 10-20% HF + 20-40% H2SO4, 15-25% HF + 10-20% HCl, 0.5-2% HF + 30-40% NH4F, 8-12% HF + C6H8O7 / C2H2O4, etc., and the specific selection and design can be based on the conventional requirements for forming TGV glass in this field, on a mass percentage basis.

[0045] For example, the alkaline etching solution can be selected from KOH etching solution with a mass concentration of 20-50%, NaOH etching solution with a mass concentration of 10-30%, TMAH etching solution with a mass concentration of 5-25%, etching solution (KOH 30-40% + IPA 5-15%), etc., and can be selected and designed according to the conventional requirements for forming TGV glass in this field.

[0046] The etching temperature is 25-60℃, for example, it can be 25℃, 28.5℃, 32℃, 35.5℃, 39℃, 42.5℃, 46℃, 49.5℃, 53℃, 56.5℃ or 60℃, but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0047] The etching time is 4-48h, for example, it can be 4h, 8.4h, 12.8h, 17.2h, 21.6h, 26h, 30.4h, 34.8h, 39.2h, 43.6h or 48h, but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0048] In this invention, a through hole refers to a through hole whose diameter variation along the depth direction is <0.1μm.

[0049] In this invention, the diameter of the through hole is 5-100 μm.

[0050] II. To illustrate the processing effects achievable by the processing method provided by this invention, the following practical examples are used for explanation:

[0051] Example 1

[0052] This embodiment provides a method for processing through holes in TGV glass, as detailed below:

[0053] A protective layer with a thickness of 50µm was set on the upper and lower surfaces of a glass substrate (100µm thick), and then laser induction and etching were performed sequentially to form a through hole.

[0054] The protective layer is a plastic layer, and the plastic layer is a polytetrafluoroethylene layer; the protective layer is applied by coating.

[0055] The laser used in the laser induction includes: a femtosecond laser with a wavelength of 1000nm; the frequency of the laser used in the laser induction is 1.5kHz; and the power of the laser used in the laser induction is 50W.

[0056] The etching solution used in the etching process includes: a fluorine acid (HF) etching solution (HF 15% + H2SO4 30% by mass percentage); the etching temperature is 50°C; and the etching time is 24 hours.

[0057] Example 2

[0058] This embodiment provides a method for processing through holes in TGV glass, as detailed below:

[0059] A protective layer with a thickness of 100µm was set on the upper and lower surfaces of the glass substrate (thickness 550µm), and then laser induction and etching were performed sequentially to form a through hole;

[0060] The protective layer is a resin layer; the resin layer is an epoxy resin layer; the protective layer is applied by coating.

[0061] The laser used in the laser-induced process includes: a picosecond laser with a wavelength of 1500nm; the frequency of the laser used in the laser-induced process is 1kHz; and the power of the laser used in the laser-induced process is 100W.

[0062] The etching solution used in the etching process includes: a fluorine acid (HF) etching solution (HF 1% + NH4F 35% by mass percentage); the etching temperature is 20°C; and the etching time is 48 hours.

[0063] Example 3

[0064] This embodiment provides a method for processing through holes in TGV glass, as detailed below:

[0065] A protective layer with a thickness of 0.1µm was set on the upper and lower surfaces of the glass substrate (thickness 50µm), and then laser induction and etching were performed sequentially to form a through hole;

[0066] The protective layer is an adhesive layer; the adhesive layer is a fluorosilicone layer; the protective layer is formed by chemical vapor deposition.

[0067] The laser used in the laser-induced process includes: a femtosecond laser or a picosecond laser with a wavelength of 600 nm; the frequency of the laser used in the laser-induced process is 2 kHz; and the power of the laser used in the laser-induced process is 10 W.

[0068] The etching solution used in the etching process includes: alkaline etching solution (KOH 30% by mass percentage); the etching temperature is 90℃; and the etching time is 4 hours.

[0069] Example 4

[0070] This embodiment provides a method for processing through holes in TGV glass, as detailed below:

[0071] A protective layer with a thickness of 10µm was set on the upper and lower surfaces of the glass substrate (thickness 300µm), and then laser induction and etching were performed sequentially to form a through hole;

[0072] The protective layer is a plastic layer; the plastic layer is a parylene layer; the protective layer is formed by chemical vapor deposition.

[0073] The laser used in the laser-induced process includes: a femtosecond laser or a picosecond laser with a wavelength of 1000 nm; the frequency of the laser used in the laser-induced process is 1.5 kHz; and the power of the laser used in the laser-induced process is 50 W.

[0074] The etching solution used in the etching process includes: alkaline etching solution (NaOH 20% by mass percentage); the etching temperature is 50°C; and the etching time is 12 hours.

[0075] Example 5

[0076] The only difference from Example 1 is that the plastic layer is replaced with a polypropylene layer of the same thickness.

[0077] Example 6

[0078] The only difference from Example 1 is that the plastic layer is replaced with a silicone layer of the same thickness.

[0079] Example 7

[0080] The only difference from Example 1 is that the plastic layer is replaced with a phenolic resin layer of the same thickness.

[0081] Example 8

[0082] The only difference from Example 1 is that the plastic layer is replaced with a nitrile rubber layer of the same thickness.

[0083] Comparative Example 1

[0084] The only difference from Example 1 is that no protective layer is provided.

[0085] Comparative Example 2

[0086] The only difference from Example 1 is that the thickness of the protective layer is 0.05 μm.

[0087] Comparative Example 3

[0088] The only difference from Example 1 is that the thickness of the protective layer is 150 μm.

[0089] The vias etched in the above embodiments and comparative examples were inspected using a laser confocal microscope (Keyence VK-X series). The results are shown in Table 1 below. The SEM image of the TGV glass through-hole obtained in Example 1 is shown below. Figure 1 As shown, the SEM image of the TGV glass through-hole obtained in Comparative Example 1 is as follows: Figure 2 As shown, the SEM image of the TGV glass through-hole obtained in Comparative Example 3 is as follows: Figure 3 As shown.

[0090] Table 1

[0091]

[0092] As shown in Table 1, in the solution provided by the present invention, by setting a specific protective layer on the glass substrate, the glass substrate can obtain good through holes after laser induction and etching. The diameter change along the depth direction of the through hole is <0.1μm, and the thickness of the obtained glass substrate does not change.

[0093] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0094] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0095] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for processing a through hole in TGV glass, characterized in that, The processing method includes: Protective layers with a thickness of 0.1-100 μm are set on the upper and lower surfaces of the glass substrate, respectively, and then laser induction and etching are performed sequentially to form through holes; The protective layer includes one or a combination of at least two of the following: a plastic layer, a resin layer, or an adhesive layer.

2. The processing method as described in claim 1, characterized in that, The plastic layer includes: a polytetrafluoroethylene layer and / or a parylene layer.

3. The processing method as described in claim 1, characterized in that, The resin layer includes: an epoxy resin layer and / or an ethylene-trifluorochloroethylene copolymer resin layer.

4. The processing method as described in claim 1, characterized in that, The adhesive layer includes: a perfluoroether rubber layer and / or a fluorosilicone layer.

5. The processing method as described in claim 1, characterized in that, The protective layer can be configured by coating and / or chemical vapor deposition.

6. The processing method as described in claim 1, characterized in that, The lasers used in the laser induction include femtosecond lasers or picosecond lasers with wavelengths of 515-1660nm.

7. The processing method as described in claim 1, characterized in that, The frequency of the laser used for laser induction is 1-2 kHz.

8. The processing method as described in claim 1, characterized in that, The power of the laser used in the laser induction is 10-100W.

9. The processing method as described in claim 1, characterized in that, The etching solution used in the etching process includes: HF acid etching solution or alkaline etching solution.

10. The processing method as described in claim 1, characterized in that, The etching temperature is 25-60℃; Preferably, the etching time is 4-48 hours.

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