一种等离子体气相沉积设备
By optimizing gas flow using structures such as variable cross-section gas chambers and baffles in plasma vapor deposition equipment, the problem of uneven film deposition on large-size substrates was solved, achieving uniform gas pressure and film uniformity, and reducing by-product accumulation and particulate matter contamination.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUHAN OPTOSTONE OPTO-ELECTRONIC TECH CO LTD
- Filing Date
- 2026-04-30
- Publication Date
- 2026-07-17
AI Technical Summary
When processing large-size substrates, existing plasma vapor deposition equipment creates a significant difference in gas pressure and concentration between the center and edge regions of the substrate, resulting in uneven film deposition thickness and affecting deposition uniformity.
A static pressure flow field is constructed by using a variable cross-section gas chamber design and a baffle plate. The diffuser chamber and the pressure stabilizing chamber are separated by the baffle plate. Gas flow is optimized by using structures such as baffle holes and turbulence columns. Gas mixing and temperature control are improved by combining spiral blades and cooling channels to ensure uniform gas distribution.
This achieves uniform gas pressure of the process gas above the substrate, improves the deposition uniformity and chemical ratio consistency of the thin film, reduces the accumulation of by-products and particulate matter contamination, and enhances the processing precision of the equipment.
Smart Images
Figure CN122128691B_ABST