一种浸没式ArF光刻胶组合物
By optimizing the combination of resin component I and resin component II, a spontaneous hydrophobic layer is formed, which solves the problems of process complexity and light transmittance of immersion ArF photoresist, and achieves efficient and clear photolithographic pattern formation and low defect rate.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU RAINBOW MATERIALS CO LTD
- Filing Date
- 2026-04-30
- Publication Date
- 2026-07-17
AI Technical Summary
Existing immersion ArF photoresists suffer from complex processes, high difficulty in supporting processes, poor matching degree between photoresist and topcoat, and insufficient light transmittance. Furthermore, the fluorinated resin and the main resin are on the same molecular chain, which leads to incomplete cleaning after development and affects the roughness of the line edges.
A combination of resin component I and resin component II is used. Resin component I is a copolymer formed from methacrylate monomers, and resin component II is a fluorinated methacrylate homopolymer. By optimizing the molecular weight and ratio, a spontaneous hydrophobic layer is formed. Combined with photoacid generators and organic solvents, the process flow is simplified.
It achieves self-layering during baking, forming a dense hydrophobic layer to prevent water from damaging the underlying photoresist, reduce photoacid leaching, improve production efficiency, ensure smooth edges of photolithographic patterns and low defect rate, and simplify the production process.
Smart Images
Figure CN122131545B_ABST