一种NAND闪存数据迁移方法
By optimizing the data migration strategy of NAND flash memory using an external calculator and particle swarm optimization algorithm, the problem of insufficient computing power of the built-in controller is solved, high-precision migration decisions are achieved, and wear leveling, bandwidth utilization and performance are improved.
CN122131985BActive Publication Date: 2026-07-17SICHUAN SILICON MICROELECTRONICS TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SICHUAN SILICON MICROELECTRONICS TECHNOLOGY CO LTD
- Filing Date
- 2026-04-30
- Publication Date
- 2026-07-17
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Figure CN122131985B_ABST
Abstract
本申请涉及三维闪存存储器、垂直NAND、数据迁移、粒子群算法技术领域,具体而言,涉及一种NAND闪存数据迁移方法,能适用于3D闪存和垂直NAND闪存存储。包括如下步骤:步骤1:外置计算器获取NAND储存器中最小的物理页的物理地址以及最小的物理块的物理地址,建立仿真地址表格;步骤2:监测NAND储存器中控制器的控制指令,控制指令包括对物理页的读取指令、物理页的写入指令,以及物理块的擦除指令。本申请通过外置计算器强大的处理能力,彻底解决了NAND闪存内置控制器算力严重受限的瓶颈,得以实时运行复杂的粒子群优化算法,对仿真出的NAND物理状态进行全局、动态、多目标协同优化,生成高精度的最佳平衡指令。
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