一种片上集成垂直电感结构、变压器及应用电路
By using a multi-layer metal structure to design an on-chip integrated vertical inductor structure and employing a vertical winding method to achieve magnetic coupling cancellation, the problems of large inductor footprint and enhanced coupling are solved. This results in inductor miniaturization, reduced signal crosstalk, and improved system performance.
CN122136152BActive Publication Date: 2026-07-17CHENGDU LINGTONG SEMICONDUCTOR CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHENGDU LINGTONG SEMICONDUCTOR CO LTD
- Filing Date
- 2026-05-07
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing technologies, off-chip discrete inductors occupy valuable PCB area, increase assembly complexity and cost, limit system miniaturization, and the enhanced coupling between inductors leads to signal crosstalk, affecting chip performance.
Method used
The on-chip integrated vertical inductor structure adopts a multi-layer metal structure design and is connected by vertical winding. It uses the opposite direction of magnetic flux to achieve magnetic coupling cancellation, reduce the coupling between the inductor and the device, and reduce signal crosstalk.
Benefits of technology
This enables inductor miniaturization, reduces chip costs, decreases electromagnetic coupling between inductors and devices, improves system performance, and reduces signal crosstalk.
✦ Generated by Eureka AI based on patent content.
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Figure CN122136152B_ABST
Abstract
本发明涉及一种片上集成垂直电感结构、变压器及应用电路，属于电感设计领域，它包括第一绕线结构、第二绕线结构和第三绕线结构依次连接形成的垂直绕线电感，垂直绕线电感垂直于XOY平面，在第一绕线结构上设置有信号输入和输出的馈线结构；第一绕线结构和第三绕线结构采用多层金属结构硅基工艺，信号输入和输出的馈线结构设置在第一绕线结构的中间层金属Mn层和Mn‑1层；所述第二绕线结构分别连接第一绕线结构和第三绕线结构的金属Mn层和Mn‑1层。本发明采用垂直立体绕线利用多层金属工艺中的过孔和金属走线垂直连接形成电感，进一步缩小了电感XY方向的面积，实现了小型化和降低了芯片成本。
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