一种增强结构的封装电路板及制备方法

By setting a polyimide material with a low coefficient of thermal expansion as an auxiliary structure on the substrate, the warping problem caused by the mismatch of the coefficient of thermal expansion of the Coreless ultrathin substrate is solved, thereby improving the bonding stability and lifespan of the substrate and the chip.

CN122138324BActive Publication Date: 2026-07-17QULIANG ELECTRONICS CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
QULIANG ELECTRONICS CO LTD
Filing Date
2026-04-30
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In the manufacturing process of Coreless ultrathin substrates, substrate warping is caused by the mismatch of thermal expansion coefficients between materials. Existing technologies that optimize the thermal expansion coefficients of materials have the problems of large R&D investment and long cycle.

Method used

By setting auxiliary structures on the substrate and using polyimide material with a low coefficient of thermal expansion to replace the edge position of the solder resist layer, a constraint on the solder resist layer is formed. Combined with chemical bonding and physical anchoring technology, the stress on the substrate is released and the expansion is suppressed.

Benefits of technology

It significantly reduces substrate warpage, improves the bonding stability and overall lifespan of the substrate and chip, and reduces the risk of cracking.

✦ Generated by Eureka AI based on patent content.

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Abstract

本发明涉及一种增强结构的封装电路板,其中增强结构的封装电路板包括基板,所述基板的第一面上设置有第一加工区和第二加工区,所述第一加工区与所述第二加工区相邻设置,所述第二加工区呈环形围绕所述第一加工区设置;阻焊层,所述阻焊层覆盖设置在所述基板的第一加工区上;芯片,所述芯片焊接在所述阻焊层的第一面上;辅助结构,所述辅助结构覆盖设置在所述基板的第二加工区上;其中,所述辅助结构的热膨胀系数低于所述阻焊层的热膨胀系数。本发明可通过辅助结构的介入,通过局部替换阻焊层,形成对阻焊层的约束,实现对基板应力的释放与膨胀抑制,从而改善翘曲程度。
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