Semiconductor devices and their fabrication methods, power modules, power conversion circuits, vehicles

By introducing a third region with varying ion concentration gradients into the semiconductor device, the gate oxide breakdown problem of trench silicon carbide MOSFETs is solved, the breakdown voltage is increased and the on-resistance is reduced, thereby improving device performance.

CN122138434APending Publication Date: 2026-06-02ANHUI YOFC ADVANCED SEMICONDUCTOR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ANHUI YOFC ADVANCED SEMICONDUCTOR CO LTD
Filing Date
2026-03-04
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In related technologies, trench-type silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer from concentrated electric fields in the drift region. The high electric fields at the bottom and corners of the trench cause the gate oxide layer to break down easily, affecting device performance.

Method used

A third region is introduced into the semiconductor device. The third region consists of N sub-regions with varying ion concentration gradients. The highly doped region is used to suppress parasitic transistors, while the low-doped region reduces the impact on current transmission, thereby reducing the electric field strength at the corner of the gate trench.

Benefits of technology

By varying the ion concentration gradient, the breakdown voltage was increased, the on-resistance was reduced, and the overall performance of the device was enhanced.

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Abstract

This invention discloses a semiconductor device and its fabrication method, a power module, a power conversion circuit, and a vehicle. The semiconductor device includes a semiconductor body with a first surface and a second surface disposed opposite to each other. The semiconductor body further includes a first region, a well region, a second region, and a third region. The second region is configured with a first conductivity type and is located on the side of the well region away from the first region. The third region extends from the first surface into the second region and is located on the side of the well region away from the gate trench. The third region includes N sub-regions. The k-th sub-region covers the side of the (k-1)-th sub-region away from the first surface. The sub-regions are configured with a second conductivity type, and the ion concentration of the k-th sub-region is less than the ion concentration of the (k-1)-th sub-region. This invention can reduce the electric field strength at the corner of the gate trench, thereby improving device performance.
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