Semiconductor device and vehicle

Abstract

A semiconductor device includes: a first semiconductor element having a first electrode located on one side in a first direction; a first terminal opposite to the first semiconductor element; a first pillar electrically connected to the first electrode; and a first heat dissipation component electrically connected to the first terminal. A first flow path is provided between the first semiconductor element and the first terminal in the first direction. The first pillar and the first heat dissipation component are housed in the first flow path. The first heat dissipation component is electrically connected to the first pillar.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device. Background Technology

[0002] Patent Document 1 discloses an example of a semiconductor module having a semiconductor device and a cooler. The cooler includes a frame with a hollow region and a heat sink. An opening communicating with the hollow region is provided in the frame. The heat sink is mounted to the frame in a manner that blocks the opening. A portion of the heat sink is housed within the hollow region. The semiconductor device is engaged with the portion of the heat sink extending outward from the hollow region. When a refrigerant (cooling water, etc.) flows through the hollow region, the refrigerant comes into contact with the heat sink. Thus, the semiconductor device can be efficiently cooled via the heat sink.

[0003] However, in the structure of the semiconductor module disclosed in Patent Document 1, the cooling effect of the semiconductor device cannot be fully utilized relative to the size of the cooler.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: International Publication No. 2017 / 094370 Summary of the Invention

[0007] One object of this disclosure is to provide a semiconductor device that has been improved compared to the prior art. In particular, in view of the above, one object of this disclosure is to provide a semiconductor device capable of achieving further improvements in cooling efficiency.

[0008] A semiconductor device provided by a first aspect of this disclosure includes: a first semiconductor element having a first electrode located on one side in a first direction; a first terminal opposite to the first electrode; a first pillar electrically connected to the first electrode; and a first heat dissipation member electrically connected to the first terminal. In the first direction, a first flow path is provided between the first semiconductor element and the first terminal. The first pillar and the first heat dissipation member are housed in the first flow path. The first heat dissipation member is electrically connected to the first pillar.

[0009] A vehicle provided by a second aspect of this disclosure has a drive source and a semiconductor device. The semiconductor device is in communication with the drive source. The semiconductor device further has a second terminal relative to the semiconductor device provided by a first aspect of this disclosure. The second terminal is located on the side opposite to the first terminal of the semiconductor device, with reference to a first semiconductor element of the semiconductor device. The first semiconductor element has a second electrode that is in communication with the second terminal. The second electrode is located on the side opposite to the first electrode of the first semiconductor element in a first direction.

[0010] Other features and advantages of this disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. Attached Figure Description

[0011] Figure 1 This is a top view of a semiconductor device according to the first embodiment of this disclosure.

[0012] Figure 2 Is with Figure 1 The corresponding top view, seen through the frame.

[0013] Figure 3 Is with Figure 2 The corresponding top view omits the illustrations of the third terminal, multiple third heat dissipation components, and multiple fourth heat dissipation components.

[0014] Figure 4 Is with Figure 3 The corresponding top view omits the illustrations of the third signal terminal, the fourth signal terminal, multiple second semiconductor elements, multiple second protective layers, multiple third pillars, multiple fourth pillars, multiple second gate pillars, multiple second detection pillars, multiple third leads, and multiple fourth leads.

[0015] Figure 5 Is with Figure 4 The corresponding top view omits the illustrations of the first terminal and multiple first heat dissipation components.

[0016] Figure 6 yes Figure 1 The semiconductor device shown is viewed from below.

[0017] Figure 7 It is along Figure 3 A sectional view along line VII-VII.

[0018] Figure 8 It is along Figure 3 A cross-sectional view of line VIII-VIII.

[0019] Figure 9 It is along Figure 3 A cross-sectional view of the IX-IX line.

[0020] Figure 10 yes Figure 7 A magnified view of a portion of the image.

[0021] Figure 11 yes Figure 8 The enlarged view shows one of the multiple first semiconductor elements and its vicinity.

[0022] Figure 12 yes Figure 8 The enlarged view shows one of the multiple second semiconductor elements and its vicinity.

[0023] Figure 13 It means in Figure 1 A cross-sectional view of the state of the semiconductor device under the flow of coolant.

[0024] Figure 14 It is equipped with Figure 1 A schematic diagram of a vehicle carrying a semiconductor device.

[0025] Figure 15 This is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure, and... Figure 7 correspond.

[0026] Figure 16 yes Figure 15 The cross-sectional view of the semiconductor device shown is consistent with... Figure 8 correspond.

[0027] Figure 17 yes Figure 16 A magnified view of a portion of the image.

[0028] Figure 18 This is a cross-sectional view of a semiconductor device according to a third embodiment of this disclosure, and... Figure 7 correspond.

[0029] Figure 19 yes Figure 18 The cross-sectional view of the semiconductor device shown is consistent with... Figure 8 correspond.

[0030] Figure 20 yes Figure 18 A magnified view of a portion of the image.

[0031] Figure 21 This is a cross-sectional view of a semiconductor device according to the fourth embodiment of this disclosure, and... Figure 7 correspond.

[0032] Figure 22 yes Figure 21 The cross-sectional view of the semiconductor device shown is consistent with... Figure 8 correspond.

[0033] Figure 23 yes Figure 22 A magnified view of a portion of the image.

[0034] Figure 24 This is a top view of the semiconductor device according to the fifth embodiment of this disclosure, and... Figure 3 correspond.

[0035] Figure 25 yes Figure 24 The top view of the semiconductor device shown is consistent with... Figure 5 correspond.

[0036] Figure 26 It is along Figure 24 A cross-sectional view of the XXVI-XXVI line.

[0037] Figure 27 This is a top view of the semiconductor device according to the sixth embodiment of this disclosure, and... Figure 3 correspond.

[0038] Figure 28 yes Figure 27 The diagram shows a plan view of a semiconductor device, and corresponds to... Figure 5 .

[0039] Figure 29 It is along Figure 27 A cross-sectional view of the XXIX-XXIX line.

[0040] Figure 30 This is a top view of a semiconductor device according to the seventh embodiment of this disclosure.

[0041] Figure 31 yes Figure 30 The semiconductor device shown is viewed from below.

[0042] Figure 32 It is along Figure 30 A sectional view of the XXXII-XXXII line.

[0043] Figure 33 It is along Figure 30 A sectional view of line XXXIII-XXXIII.

[0044] Figure 34 This is a top view of a semiconductor device according to the eighth embodiment of this disclosure.

[0045] Figure 35 yes Figure 34 The top view of the semiconductor device shown is consistent with... Figure 2 correspond.

[0046] Figure 36 yes Figure 34 The top view of the semiconductor device shown is consistent with... Figure 3 correspond.

[0047] Figure 37 yes Figure 34 The top view of the semiconductor device shown is consistent with... Figure 5 correspond.

[0048] Figure 38 It is along Figure 35 A sectional view of the XXXVIII-XXXVIII line.

[0049] Figure 39 It is along Figure 35 A cross-sectional view of the XXXIX-XXXIX line. Detailed Implementation

[0050] The details of this disclosure are described with reference to the accompanying drawings.

[0051] First implementation method:

[0052] according to Figures 1-13 The semiconductor device A10 according to the first embodiment of this disclosure will be described. Generally, the semiconductor device A10 is used in power conversion circuits such as inverters. The semiconductor device A10 includes: a first terminal 11, a second terminal 12, a third terminal 13, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a plurality of first protective layers 23, a plurality of second protective layers 24, a plurality of first heat dissipation components 31, a plurality of second heat dissipation components 32, a plurality of fourth heat dissipation components 34, and a housing 50. The semiconductor device A10 includes: a plurality of first pillars 41, a plurality of second pillars 42, a plurality of first gate pillars 43, a plurality of first detection pillars 44, a plurality of third pillars 45, a plurality of fourth pillars 46, a plurality of second gate pillars 47, and a plurality of second detection pillars 48. The semiconductor device A10 also includes: a first signal terminal 16, a second signal terminal 17, a third signal terminal 18, a fourth signal terminal 19, a plurality of first leads 61, a plurality of second leads 62, a plurality of third leads 63, and a plurality of fourth leads 64. For ease of understanding, Figures 2-5 Through frame 50. Figures 2-5 In the diagram, an imaginary line (double-dotted line) represents the frame 50 that is visible through the image. Figure 3 In order to facilitate understanding, relative to Figure 2 The illustrations of the third terminal 13, multiple second heat dissipation components 32, and multiple fourth heat dissipation components 34 are omitted. Figure 4 In order to facilitate understanding, relative to Figure 3The illustrations of the third signal terminal 18, the fourth signal terminal 19, multiple second semiconductor elements 22, multiple second protective layers 24, multiple third pillars 45, multiple fourth pillars 46, multiple second gate pillars 47, multiple second detection pillars 48, multiple third leads 63, and multiple fourth leads 64 are omitted. Figure 5 In order to facilitate understanding, relative to Figure 4 The illustrations of the first terminal 11 and the plurality of first heat dissipation components 31 are omitted.

[0053] In the description of semiconductor device A10, for convenience, the normal direction of the first mounting surface 121A of the second terminal 12 (described later) is referred to as the "first direction z". Additionally, the direction orthogonal to the first direction z is referred to as the "second direction x". Furthermore, the direction orthogonal to both the first direction z and the second direction x is referred to as the "third direction y".

[0054] A half-bridge circuit is constructed in semiconductor device A10, which includes multiple first semiconductor elements 21 and multiple second semiconductor elements 22. Semiconductor device A10 converts direct current supplied to second terminal 12 and third terminal 13 into alternating current through the multiple first semiconductor elements 21 and multiple second semiconductor elements 22. Second terminal 12 is a P terminal (positive). Third terminal 13 is an N terminal (negative). The converted alternating current is input from first terminal 11 to power supply objects such as motors.

[0055] like Figures 7 to 9 As shown, the frame 50 supports the first terminal 11, the second terminal 12, the third terminal 13, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, and the fourth signal terminal 19, respectively. The frame 50 is made of an insulator containing resin. Alternatively, the frame 50 may also be made of a conductor containing a metal such as aluminum (Al).

[0056] like Figure 1 as well as Figure 6 As shown, the frame 50 has: a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 faces the side in the first direction z. The bottom surface 52 faces the side opposite to the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 face opposite sides to each other in the second direction x. The third side surface 533 and the fourth side surface 534 face opposite sides to each other in the third direction y.

[0057] like Figures 7-9 As shown, a hollow section 54 is provided in the frame 50. Atmosphere flows into the hollow section 54. Furthermore, as... Figure 13As shown, the hollow portion 54 can also be a structure in which the refrigerant 70 is always filled. The hollow portion 54 includes a first flow path 541, a second flow path 542, and a third flow path 543. The first flow path 541 is disposed in the first direction z between a plurality of first semiconductor elements 21 and a first terminal 11. The second flow path 542 is disposed in the first direction z between a second terminal 12 and the first flow path 541. The second flow path 542 communicates with the first flow path 541. The third flow path 543 is disposed in the first direction z between the first terminal 11 and the third terminal 13. Here, Figure 13 The refrigerant 70 shown must be an insulator. In this disclosure, the composition of the refrigerant 70 is not limited as long as it is an insulator.

[0058] like Figure 1 , Figure 3 , Figure 4 as well as Figure 6 As shown, the frame 50 is provided with an inlet 55 and an outlet 56. The inlet 55 opens on the third side 533 and communicates with the hollow portion 54. The outlet 56 opens on the fourth side 534 and communicates with the hollow portion 54. Within the frame 50, Figure 13 The refrigerant 70 shown flows into the hollow section 54 from the inlet 55. The refrigerant 70 flowing into the hollow section 54 is discharged from the outlet 56. Figure 4 As shown, the inlet 55 and outlet 56 are located on opposite sides of each other in the second direction x, with reference to a plurality of first heat dissipation components 31.

[0059] like Figures 7-9 As shown, the first terminal 11 is located on one side of the plurality of first semiconductor elements 21 in the first direction z. The first terminal 11 is, for example, a metal plate containing copper (Cu). The first terminal 11 has a first base 111 and a first expansion 112. The first base 111 is housed in the hollow portion 54 of the frame 50 and is in contact with the first flow path 541 and the third flow path 543. The first base 111 is a strip extending in the second direction x. The first base 111 has a second mounting surface 111A facing the same side as the top surface 51 of the frame 50 in the first direction z. The first expansion 112 is electrically connected to the second direction x side of the first base 111. The first expansion 112 is supported by the frame 50. A portion of the first expansion 112 protrudes outward from the second side 532 of the frame 50.

[0060] like Figures 7-9As shown, the second terminal 12 is located on the opposite side of the first terminal 11 in the first direction z, with reference to a plurality of first semiconductor elements 21. The second terminal 12 is, for example, a metal plate containing copper. The second terminal 12 has a second base 121 and a second expansion 122. The second base 121 is housed in the hollow portion 54 of the frame 50 and is in contact with the second flow path 542. The second base 121 is a strip extending in the second direction x. The second base 121 has a first mounting surface 121A in the first direction z facing the same side as the top surface 51 of the frame 50. The second expansion 122 is electrically connected to the second base 121 in the second direction x. The second expansion 122 is supported by the frame 50. A portion of the second expansion 122 protrudes outward from the first side surface 531 of the frame 50.

[0061] like Figures 7-9 As shown, the third terminal 13 is located on the opposite side of the first terminal 11 in the first direction z, with reference to a plurality of second semiconductor elements 22. The third terminal 13 is, for example, a metal plate containing copper. The third terminal 13 has a third base 131 and a third expansion 132. The third base 131 is housed in the hollow portion 54 of the frame 50 and is in contact with the third flow path 543. The third base 131 is a strip extending in the second direction x. The third expansion 132 is electrically connected to one side of the third base 131 in the second direction x. The third expansion 132 is supported by the frame 50. A portion of the third expansion 132 protrudes outward from the first side 531 of the frame 50.

[0062] like Figures 7-9 As shown, a plurality of first semiconductor elements 21 are located in the first direction z between the first base 111 of the first terminal 11 and the second base 121 of the second terminal 12. The plurality of first semiconductor elements 21 are housed in the second flow path 542 of the hollow portion 54 of the housing 50. All of the plurality of first semiconductor elements 21 are the same element. The plurality of first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the plurality of first semiconductor elements 21 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of semiconductor device A10, the plurality of first semiconductor elements 21 are exemplified by an n-channel, vertically oriented MOSFET. The plurality of first semiconductor elements 21 include a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). The plurality of first semiconductor elements 21 are arranged along the second direction x.

[0063] like Figure 11 As shown, the plurality of first semiconductor elements 21 each have: a first electrode 211, a second electrode 212, a first gate electrode 213 and a first protective film 214.

[0064] like Figure 11 As shown, the first electrode 211 is opposite to the first base 111 of the first terminal 11. The first electrode 211 is connected to the first terminal 11. The current corresponding to the power converted by the first semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 is equivalent to the source of the first semiconductor element 21. The first electrode 211 is in contact with the first flow path 541 of the hollow portion 54 of the frame 50.

[0065] like Figure 11 As shown, the second electrode 212 is opposite to the first mounting surface 121A of the second base 121 of the second terminal 12. The second electrode 212 is connected to the second terminal 12. The current corresponding to the power before conversion by the first semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 is equivalent to the drain of the first semiconductor element 21.

[0066] like Figure 11 As shown, the first gate electrode 213 is located on the same side as the first electrode 211 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. Figure 5 As shown, when viewed in the first direction z, the area of ​​the first gate electrode 213 is smaller than the area of ​​the first electrode 211.

[0067] like Figure 11 As shown, the first protective film 214 is located on the same side as the first electrode 211 in the first direction z. Viewed in the first direction z, the first protective film 214 surrounds the periphery of both the first electrode 211 and the first gate electrode 213. The first protective film 214 is an insulator. The first protective film 214 is, for example, formed by sequentially stacking a silicon dioxide (SiO2) layer, a silicon nitride (Si3N4) layer, and a polybenzoxazole (PBO) layer. Alternatively, a polyimide layer may be used instead of a polybenzoxazole layer in the first protective film 214.

[0068] like Figure 5 and Figures 7-9 As shown, a plurality of first protective layers 23 respectively cover at least a portion of one of a plurality of first semiconductor elements 21. The plurality of first protective layers 23 are insulators. The plurality of first protective layers 23 are, for example, made of a material comprising epoxy resin. Figure 5 As shown, when viewed in the first direction z, multiple first protective layers 23 respectively cover the entire periphery of one of the multiple first semiconductor elements 21. Figure 10 as well as Figure 11 As shown, multiple first protective layers 23 respectively cover a portion of the first protective film 214 of one of the multiple first semiconductor elements 21.

[0069] like Figure 10 as well as Figure 11 As shown, a first opening 231 and a second opening 232 are respectively provided in a plurality of first protective layers 23. The first opening 231 and the second opening 232 are located on opposite sides of each other in the first direction z. The first electrode 211 and the first gate electrode 213 of one of the plurality of first semiconductor elements 21 are exposed through the first opening 231. The first opening 231 is connected to the first flow path 541 of the hollow portion 54 of the frame 50. The size of the cross section of the first opening 231 orthogonal to the first direction z increases from the first electrode 211 toward the plurality of first heat dissipation components 31. The second electrode 212 of one of the plurality of first semiconductor elements 21 is exposed through the second opening 232. The size of the cross section of the second opening 232 orthogonal to the first direction z increases from the second electrode 212 toward the second base 121 of the second terminal 12.

[0070] like Figures 7-9 As shown, a plurality of second semiconductor elements 22 are located on the opposite side of the plurality of first semiconductor elements 21, with reference to the first terminal 11, in the first direction z. Furthermore, the plurality of second semiconductor elements 22 are located between the first base 111 of the first terminal 11 and the third base 131 of the third terminal 13 in the first direction z. The plurality of second semiconductor elements 22 are housed in the third flow path 543 of the hollow portion 54 of the housing 50. Viewed in the first direction z, the plurality of second semiconductor elements 22 overlap with the plurality of first semiconductor elements 21. The plurality of second semiconductor elements 22 are the same elements as the plurality of first semiconductor elements 21. Therefore, the plurality of second semiconductor elements 22 are n-channel MOSFETs with a vertical configuration. The plurality of second semiconductor elements 22 are arranged along the second direction x.

[0071] like Figure 12 As shown, the plurality of second semiconductor elements 22 each have: a third electrode 221, a fourth electrode 222, a second gate electrode 223 and a second protective film 224.

[0072] like Figure 12 As shown, the third electrode 221 is opposite to the third base 131 of the third terminal 13. The third electrode 221 is connected to the third terminal 13. Current corresponding to the power converted by the second semiconductor element 22 flows through the third electrode 221. That is, the third electrode 221 is equivalent to the source of the second semiconductor element 22. The third electrode 221 is in contact with the third flow path 543 of the hollow portion 54 of the frame 50.

[0073] like Figure 12As shown, the fourth electrode 222 is opposite to the second mounting surface 111A of the first base 111 of the first terminal 11. The fourth electrode 222 is connected to the first terminal 11. A current corresponding to the power before conversion by the second semiconductor element 22 flows through the fourth electrode 222. That is, the fourth electrode 222 is equivalent to the drain of the second semiconductor element 22.

[0074] like Figure 12 As shown, the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. Figure 3 As shown, when viewed in the first direction z, the area of ​​the second gate electrode 223 is smaller than the area of ​​the third electrode 221.

[0075] like Figure 12 As shown, the second protective film 224 is located on the same side as the third electrode 221 in the first direction z. Viewed in the first direction z, the second protective film 224 surrounds the periphery of both the third electrode 221 and the second gate electrode 223. The second protective film 224 is an insulator. The composition of the second protective film 224 is the same as that of the first protective films 214 of each of the plurality of first semiconductor elements 21.

[0076] like Figure 3 and Figures 7-9 As shown, a plurality of second protective layers 24 respectively cover at least a portion of one of a plurality of second semiconductor elements 22. The plurality of second protective layers 24 are insulators. The plurality of second protective layers 24 are, for example, made of a material comprising epoxy resin. Figure 3 As shown, when viewed in the first direction z, multiple second protective layers 24 respectively cover the entire periphery of one of the multiple second semiconductor elements 22. Figure 12 As shown, multiple second protective layers 24 respectively cover a portion of the second protective film 224 of one of the multiple second semiconductor elements 22.

[0077] like Figure 12 As shown, a third opening 241 and a fourth opening 242 are respectively provided in multiple second protective layers 24. The third opening 241 and the fourth opening 242 are located on opposite sides of each other in the first direction z. The third electrode 221 and the second gate electrode 223 of one of the multiple second semiconductor elements 22 are exposed through the third opening 241. The third opening 241 communicates with the third flow path 543 of the hollow portion 54 of the frame 50. The size of the cross section of the third opening 241 perpendicular to the first direction z increases from the third electrode 221 toward the multiple second heat dissipation components 32. The fourth electrode 222 of one of the multiple second semiconductor elements 22 is exposed through the fourth opening 242. The size of the cross section of the fourth opening 242 orthogonal to the first direction z increases from the fourth electrode 222 toward the first base 111 of the first terminal 11.

[0078] like Figure 10 and Figure 11 As shown, a plurality of first pillars 41 are electrically connected to a first electrode 211 of one of a plurality of first semiconductor elements 21. The plurality of first pillars 41 may contain copper, for example. The plurality of first pillars 41 may be formed, for example, by plating. The plurality of first pillars 41 are housed in a first flow path 541 of a hollow portion 54 of a frame 50. At least a portion of each of the plurality of first pillars 41 is housed in a first opening 231 of one of a plurality of first protective layers 23. In the semiconductor device A10, the entire plurality of first pillars 41 is housed in the first opening 231. The plurality of first pillars 41 are separated in a direction orthogonal to a first direction z. The dimension of each of the plurality of first pillars 41 in the first direction z is smaller than the dimension of each of the plurality of first heat dissipation components 31 in the first direction z.

[0079] like Figure 10 as well as Figure 11 As shown, a plurality of second pillars 42 are electrically connected to the second electrode 212 of one of a plurality of first semiconductor elements 21. The plurality of second pillars 42 may contain copper, for example. The plurality of second pillars 42 may be formed, for example, by plating. The plurality of second pillars 42 are housed in the second flow path 542 of the hollow portion 54 of the frame 50. At least a portion of each of the plurality of second pillars 42 is housed in the second opening 232 of one of the plurality of first protective layers 23. In the semiconductor device A10, the entire plurality of second pillars 42 is housed in the second opening 232. The plurality of second pillars 42 are separated in a direction orthogonal to the first direction z. The dimension of each of the plurality of second pillars 42 in the first direction z is smaller than the dimension of each of the plurality of first heat dissipation components 31 in the first direction z. The plurality of second pillars 42 are electrically bonded to the first mounting surface 121A of the second base 121 of the second terminal 12 via a bonding layer 29. Thus, the second electrode 212 of each of the plurality of first semiconductor elements 21 is connected to the second terminal 12. The bonding layer 29 is solder. In addition, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like.

[0080] like Figure 11 As shown, a plurality of first gate pillars 43 are electrically connected to the first gate electrodes 213 of each of a plurality of first semiconductor elements 21. The plurality of first gate pillars 43 may contain, for example, copper. The plurality of first gate pillars 43 may be formed, for example, by plating. At least a portion of each of the plurality of first gate pillars 43 is housed in a first opening 231 of one of the plurality of first protective layers 23.

[0081] like Figure 5As shown, a plurality of first detection pillars 44 are electrically connected to the first electrodes 211 of each of a plurality of first semiconductor elements 21. The plurality of first detection pillars 44 may contain, for example, copper. The plurality of first detection pillars 44 may be formed, for example, by plating. At least a portion of each of the plurality of first detection pillars 44 is housed in a first opening 231 of one of a plurality of first protective layers 23.

[0082] like Figure 12 As shown, a plurality of third pillars 45 are electrically connected to the third electrode 221 of one of a plurality of second semiconductor elements 22. The plurality of third pillars 45 may contain, for example, copper. The plurality of third pillars 45 may be formed, for example, by plating. The plurality of third pillars 45 are housed in the third flow path 543 of the hollow portion 54 of the frame 50. At least a portion of each of the plurality of third pillars 45 is housed in the third opening 241 of one of a plurality of second protective layers 24. In the semiconductor device A10, the entire plurality of third pillars 45 is housed in the third opening 241. The plurality of third pillars 45 are separated in a direction orthogonal to the first direction z. The dimension of each of the plurality of third pillars 45 in the first direction z is smaller than the dimension of each of the plurality of second heat dissipation components 32 in the first direction z.

[0083] like Figure 12 As shown, a plurality of fourth pillars 46 are electrically connected to the fourth electrode 222 of one of a plurality of second semiconductor elements 22. The plurality of fourth pillars 46 may contain copper, for example. The plurality of fourth pillars 46 may be formed, for example, by plating. The plurality of fourth pillars 46 are housed in the third flow path 543 of the hollow portion 54 of the frame 50. At least a portion of each of the plurality of fourth pillars 46 is housed in the fourth opening 242 of one of a plurality of second protective layers 24. In the semiconductor device A10, the entirety of each of the plurality of fourth pillars 46 is housed in the fourth opening 242. The plurality of fourth pillars 46 are separated in a direction orthogonal to the first direction z. The dimension of each of the plurality of fourth pillars 46 in the first direction z is smaller than the dimension of each of the plurality of second heat dissipation components 32 in the first direction z. The plurality of fourth pillars 46 are electrically bonded to the second mounting surface 111A of the first base 111 of the first terminal 11 via the bonding layer 29. Thus, the fourth electrode 222 of each of the plurality of second semiconductor elements 22 is connected to the first terminal 11.

[0084] like Figure 12 As shown, a plurality of second gate pillars 47 are electrically connected to the second gate electrodes 223 of each of a plurality of second semiconductor elements 22. The plurality of second gate pillars 47 may contain, for example, copper. The plurality of second gate pillars 47 may be formed, for example, by plating. At least a portion of each of the plurality of second gate pillars 47 is housed in a third opening 241 of one of the plurality of second protective layers 24.

[0085] like Figure 3As shown, a plurality of second detection pillars 48 are electrically connected to the third electrodes 221 of each of a plurality of second semiconductor elements 22. The plurality of second detection pillars 48 may contain, for example, copper. The plurality of second detection pillars 48 may be formed, for example, by plating. At least a portion of each of the plurality of second detection pillars 48 is housed in a third opening 241 of one of the plurality of second protective layers 24.

[0086] like Figure 4 as well as Figure 5 As shown, the first signal terminal 16 is located on the third direction y side, between the first terminal 11 and the second terminal 12. The first signal terminal 16 is supported by the frame 50. The first signal terminal 16 is connected to the first gate electrode 213 of each of the plurality of first semiconductor elements 21. A gate voltage for driving the plurality of first semiconductor elements 21 is applied to the first signal terminal 16. The first signal terminal 16 is, for example, a metal lead containing copper. The first signal terminal 16 has an interior 161 and an exterior 162. The interior 161 is housed in the frame 50. Furthermore, a portion of the interior 161 is housed in the hollow portion 54 of the frame 50. The interior 161 includes a portion extending in the second direction x. The exterior 162 communicates with the interior 161. Figure 8 As shown, the outer part 162 protrudes outward from the third side 533 of the frame 50.

[0087] Multiple first leads 61 are respectively connected to one of the first gate electrodes 213 of each of the multiple first semiconductor elements 21 and the first signal terminal 16. For example... Figure 5 As shown, multiple first leads 61 extend in the third direction y. Figure 8 As shown, a portion of each of the plurality of first leads 61 is housed in the first flow path 541 of the hollow portion 54 of the housing 50. The plurality of first leads 61 are, for example, metal leads containing copper. Figure 11 As shown, one side of each of the plurality of first leads 61 in the third direction y is electrically bonded to one of the plurality of first gate pillars 43 via the bonding layer 29. The other side of each of the plurality of first leads 61 in the third direction y is electrically bonded to the interior 161 of the first signal terminal 16.

[0088] like Figure 4 as well as Figure 5As shown, the second signal terminal 17 is located on the same side as the first signal terminal 16 in the third direction y, with reference to the first terminal 11 and the second terminal 12. The second signal terminal 17 is supported by the frame 50. The second signal terminal 17 is conductive to the first electrode 211 of each of the plurality of first semiconductor elements 21. A voltage equivalent to the voltage applied to the first electrode 211 of each of the plurality of first semiconductor elements 21 is applied to the second signal terminal 17. The second signal terminal 17 is, for example, a metal lead containing copper. The second signal terminal 17 has an interior 171 and an exterior 172. The interior 171 is housed in the frame 50. Furthermore, a portion of the interior 171 is housed in the hollow portion 54 of the frame 50. The interior 171 includes a portion extending in the second direction x. Figure 8 and Figure 9 As shown, the inner part 171 is located closer to the top surface 51 of the frame 50 than the inner part 161 of the first signal terminal 16. The outer part 172 communicates with the inner part 171. Figure 9 As shown, the outer part 172 protrudes outward from the third side 533 of the frame 50.

[0089] Multiple second leads 62 are respectively connected to one of the first electrodes 211 and the second signal terminal 17 of the multiple first semiconductor elements 21. For example... Figure 5 As shown, when viewed in the first direction z, multiple second leads 62 extend in the third direction y. Figure 9 As shown, a plurality of second leads 62 respectively cross the interior 161 of the first signal terminal 16. A portion of each of the plurality of second leads 62 is housed in the first flow path 541 of the hollow portion 54 of the housing 50. The plurality of second leads 62 are, for example, metal leads containing copper. One third-direction y side of each of the plurality of second leads 62 is electrically connected to one of the plurality of first detection posts 44. The other third-direction y side of each of the plurality of second leads 62 is electrically connected to the interior 171 of the second signal terminal 17.

[0090] like Figure 2 and Figure 3 As shown, the third signal terminal 18 is located on the third direction y side of the first terminal 11 and the third terminal 13. Viewed in the first direction z, the third signal terminal 18 overlaps with the first signal terminal 16. The third signal terminal 18 is supported by the frame 50. The third signal terminal 18 is connected to the second gate electrode 223 of each of the plurality of second semiconductor elements 22. A gate voltage for driving the plurality of second semiconductor elements 22 is applied to the third signal terminal 18. The third signal terminal 18 is, for example, a metal lead containing copper. The third signal terminal 18 has an interior 181 and an exterior 182. The interior 181 is housed in the frame 50. A portion of the interior 181 is housed in the hollow portion 54 of the frame 50. The interior 181 includes a portion extending in the second direction x. The exterior 182 communicates with the interior 181. Figure 8 As shown, the outer part 182 protrudes outward from the third side 533 of the frame 50.

[0091] Multiple third leads 63 are respectively connected to one of the second gate electrodes 223 of the multiple second semiconductor elements 22 and the third signal terminal 18. For example... Figure 3 As shown, multiple third leads 63 extend in the third direction y, respectively. Figure 8 As shown, a portion of each of the plurality of third leads 63 is housed in the third flow path 543 of the hollow portion 54 of the housing 50. The plurality of third leads 63 are, for example, copper-containing metal leads. Figure 12 As shown, one side of each of the plurality of third leads 63 in the third direction y is electrically bonded to one of the plurality of second gate pillars 47 via the bonding layer 29. The other side of each of the plurality of third leads 63 in the third direction y is electrically bonded to the interior 181 of the third signal terminal 18.

[0092] like Figure 2 and Figure 3 As shown, the fourth signal terminal 19 is located on the same side as the third signal terminal 18 in the third direction y, with reference to the first terminal 11 and the third terminal 13. Viewed in the first direction z, the fourth signal terminal 19 overlaps with the second signal terminal 17. The fourth signal terminal 19 is supported by the frame 50. The fourth signal terminal 19 is conductive to the third electrode 221 of each of the plurality of second semiconductor elements 22. A voltage equivalent to the voltage applied to the third electrode 221 of each of the plurality of second semiconductor elements 22 is applied to the fourth signal terminal 19. The fourth signal terminal 19 is, for example, a metal lead containing copper. The fourth signal terminal 19 has an interior 191 and an exterior 192. The interior 191 is housed within the frame 50. Furthermore, a portion of the interior 191 is housed in the hollow portion 54 of the frame 50. The interior 191 includes a portion extending in the second direction x. Figure 8 and Figure 9 As shown, the inner part 191 is located closer to the top surface 51 of the frame 50 than the inner part 181 of the third signal terminal 18. The outer part 192 communicates with the inner part 191. Figure 9 As shown, the outer part 192 protrudes outward from the third side 533 of the frame 50.

[0093] Multiple fourth leads 64 are respectively connected to one of the third electrodes 221 of multiple second semiconductor elements 22 and the fourth signal terminal 19. For example... Figure 3 As shown, when viewed in the first direction z, multiple fourth leads 64 extend in the third direction y. Figure 9As shown, a plurality of fourth leads 64 respectively cross the interior 181 of the third signal terminal 18. A portion of each of the plurality of fourth leads 64 is housed in the third flow path 543 of the hollow portion 54 of the housing 50. The plurality of fourth leads 64 are, for example, metal leads containing copper. One side of each of the plurality of fourth leads 64 in the third direction y is electrically connected to one of the plurality of second detection posts 48. The other side of each of the plurality of fourth leads 64 in the third direction y is electrically connected to the interior 191 of the fourth signal terminal 19.

[0094] like Figures 7-9 As shown, a plurality of first heat dissipation components 31 are electrically connected to the first base 111 of the first terminal 11. The plurality of first heat dissipation components 31 are housed in the first flow path 541 of the hollow portion 54 of the frame 50. The plurality of first heat dissipation components 31 are, for example, copper-containing rod components. The plurality of first heat dissipation components 31 extend respectively in a first direction z. In the semiconductor device A10, one side of each of the plurality of first heat dissipation components 31 in the first direction z is electrically bonded to the first base 111, for example, by laser welding. Figure 10 and Figure 11 As shown, the other side of each of the plurality of first heat dissipation components 31 in the first direction z is electrically bonded to the plurality of first pillars 41 via the bonding layer 29. Thus, the first electrode 211 of each of the plurality of first semiconductor elements 21 is connected to the first terminal 11.

[0095] like Figure 7 and Figure 8 As shown, a plurality of second heat dissipation components 32 are connected to the second base 121 of the second terminal 12. The plurality of second heat dissipation components 32 are located on the side opposite to the plurality of first semiconductor elements 21 in the first direction z, with the second terminal 12 as a reference. The plurality of second heat dissipation components 32 are housed in the hollow portion 54 of the frame 50. The plurality of second heat dissipation components 32 are, for example, copper-containing rod components. The plurality of second heat dissipation components 32 extend in the first direction z. In the semiconductor device A10, one side of each of the plurality of second heat dissipation components 32 in the first direction z is electrically bonded to the second base 121, for example, by laser welding.

[0096] like Figures 7-9 As shown, a plurality of third heat dissipation components 33 are electrically connected to the third base 131 of the third terminal 13. The plurality of third heat dissipation components 33 are housed in the third flow path 543 of the hollow portion 54 of the frame 50. The plurality of third heat dissipation components 33 are, for example, copper-containing rod components. The plurality of third heat dissipation components 33 extend respectively in the first direction z. In the semiconductor device A10, one side of each of the plurality of third heat dissipation components 33 in the first direction z is electrically bonded to the first base 111, for example, by laser welding. Figure 12As shown, the other side of each of the plurality of third heat dissipation components 33 in the first direction z is electrically bonded to the plurality of third pillars 45 via the bonding layer 29. Thus, the third electrode 221 of each of the plurality of second semiconductor elements 22 is connected to the third terminal 13.

[0097] like Figure 7 and Figure 8 As shown, a plurality of fourth heat dissipation components 34 are connected to the third base 131 of the third terminal 13. The plurality of fourth heat dissipation components 34 are located on the side opposite to the plurality of second semiconductor elements 22 in the first direction z, with the third terminal 13 as a reference. The plurality of fourth heat dissipation components 34 are housed in the hollow portion 54 of the frame 50. The plurality of fourth heat dissipation components 34 are, for example, copper-containing rod components. The plurality of fourth heat dissipation components 34 extend in the first direction z. In the semiconductor device A10, one side of each of the plurality of fourth heat dissipation components 34 in the first direction z is electrically bonded to the third base 131, for example, by laser welding.

[0098] Next, according to Figure 14 The following describes a vehicle B equipped with a semiconductor device A10. Vehicle B is, for example, an electric vehicle (EV).

[0099] like Figure 14 As shown, vehicle B includes: an on-board charger 81, a battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from an outdoor power supply facility (not shown). Alternatively, the power supply unit from the power supply facility to the on-board charger 81 can also be wired. The on-board charger 81 is a boost-type DC-DC converter. The voltage supplied to the on-board charger 81 is boosted by this converter before supplying power to the battery 82. The boosted voltage is, for example, 600V.

[0100] Drive system 83 drives vehicle B. Drive system 83 includes inverter 831 and drive source 832. Semiconductor device A10 forms part of inverter 831. Power stored in battery 82 supplies power to inverter 831. The power supplied from battery 82 to inverter 831 is direct current. Furthermore, it can be connected to… Figure 14Unlike the power system shown, a boost-type DC-DC converter is also provided between the battery 82 and the inverter 831. The inverter 831 converts DC power to AC power. The inverter 831, which includes a semiconductor device A10, is connected to the drive source 832. The drive source 832 has an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates, and this rotation is transmitted to the transmission. The transmission rotates the drive shaft of vehicle B by appropriately reducing the speed transmitted from the AC motor. Thus, vehicle B is driven. When driving vehicle B, the speed of the AC motor needs to be freely operated according to information such as the amount of change in the accelerator pedal. Therefore, the semiconductor device A10 in the inverter 831 needs to output AC power with an appropriately changed frequency to correspond to the required speed of the AC motor.

[0101] Next, the function and effect of semiconductor device A10 will be explained.

[0102] Semiconductor device A10 includes: a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. By adopting this structure, as... Figure 13 As shown, when the refrigerant 70 flows into the hollow portion 54 of the frame 50, the refrigerant 70 flows down into the first flow path 541. Therefore, at least the refrigerant 70 is in direct contact with the first heat dissipation component 31, and thus the cooling efficiency of the semiconductor device A10 is higher than before. Therefore, according to this structure, a further improvement in cooling efficiency can be achieved in the semiconductor device A10.

[0103] The semiconductor device A10 also has a first protective layer 23 as an insulator. The first protective layer 23 covers at least a portion of the first semiconductor element 21. By adopting this structure, the first semiconductor element 21 can be protected against external factors. In this case, from the viewpoint of protecting the first semiconductor element 21, it is preferable that, when viewed in the first direction z, the first protective layer 23 covers the entire periphery of the first semiconductor element 21. Furthermore, by adopting a structure in which the first protective layer 23 covers a portion of the first protective film 214, leakage current from the first semiconductor element 21 can be effectively suppressed.

[0104] The first protective layer 23 has a first opening 231 for exposing the first electrode 211 of the first semiconductor element 21. At least a portion of the first pillar 41 is received in the first opening 231. By adopting this structure, especially when manufacturing the semiconductor device A10, it is possible to suppress the action of external forces in a direction orthogonal to the first direction z on the first pillar 41.

[0105] The first terminal 11 is in contact with the first flow path 541. By adopting this structure, the coolant 70 is also in direct contact with the first terminal 11, thus enabling a further improvement in the cooling efficiency of the semiconductor device A10.

[0106] The first electrode 211 of the first semiconductor element 21 is in contact with the first flow path 541. By adopting this structure, the coolant 70 also comes into direct contact with the first electrode 211, thus further improving the cooling efficiency of the semiconductor device A10. In this case, the size of the cross-section of the first opening 231 of the first protective layer 23 in the direction orthogonal to the first direction z increases from the first electrode 211 towards the first heat dissipation member 31. By adopting this structure, the coolant 70 easily flows into the first opening 231, thus, in addition to the first electrode 211, the coolant 70 also easily comes into direct contact with the first column 41.

[0107] The semiconductor device A10 also has a second terminal 12. The first semiconductor element 21 is electrically connected to the second terminal 12. In the first direction z, a second flow path 542 communicating with the first flow path 541 is provided between the second terminal 12 and the first flow path 541. The second terminal 12 is in contact with the second flow path 542. By adopting this structure, the coolant 70 is also in direct contact with the second terminal 12, thus further improving the cooling efficiency of the semiconductor device A10.

[0108] The semiconductor device A10 further includes a first terminal 11, a second terminal 12, and a housing 50 supporting the second terminal 12. An inlet 55 and an outlet 56 are provided in the housing 50. The inlet 55 and the outlet 56 are located on opposite sides of each other in a direction orthogonal to the first direction z, with reference to the first heat dissipation component 31. By adopting this structure, the refrigerant 70 can flow down in a manner that allows it to easily come into direct contact with the first heat dissipation component 31.

[0109] Second implementation method:

[0110] according to Figures 15-17 The semiconductor device A20 according to the second embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 15 With respect to semiconductor device A10 Figure 7 correspond. Figure 16 With respect to semiconductor device A10 Figure 8 correspond.

[0111] In semiconductor device A20, the structure of the plurality of first protective layers 23, the plurality of second protective layers 24, the plurality of second pillars 42 and the plurality of fourth pillars 46 is different from that of semiconductor device A10.

[0112] like Figures 15-17 As shown, each of the plurality of second pillars 42 includes a portion protruding in a first direction z from a second opening 232 of one of the plurality of first protective layers 23. The plurality of first protective layers 23 are respectively separated from the second base 121 of the second terminal 12. Thus, a portion of the second flow path 542 of the hollow portion 54 of the frame 50 is located between the first mounting surface 121A of the second base 121 and the plurality of first protective layers 23. Therefore, the second opening 232 of each of the plurality of first protective layers 23 communicates with the second flow path 542. The second electrode 212 of each of the plurality of first semiconductor elements 21 is in contact with the second flow path 542.

[0113] like Figure 15 and Figure 16 As shown, each of the plurality of fourth pillars 46 includes a portion protruding in a first direction z from a fourth opening 242 of one of the plurality of second protective layers 24. The plurality of second protective layers 24 are respectively separated from the first base 111 of the first terminal 11. Thus, a portion of the third flow path 543 of the hollow portion 54 of the frame 50 is located between the second mounting surface 111A of the first base 111 and the plurality of second protective layers 24. Therefore, the fourth opening 242 of each of the plurality of second protective layers 24 communicates with the third flow path 543. The fourth electrode 222 of each of the plurality of second semiconductor elements 22 is in contact with the third flow path 543.

[0114] Next, the function and effect of the semiconductor device A20 will be explained.

[0115] Semiconductor device A20 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A20. Furthermore, semiconductor device A20, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0116] In the semiconductor device A20, a portion of the second flow path 542 is located between the second terminal 12 and the first protective layer 23 in the first direction z. The second electrode 212 of the first semiconductor element 21 is in contact with the second flow path 542. By adopting this structure, the coolant 70 is also in direct contact with the second electrode 212, thus enabling a further improvement in the cooling efficiency of the semiconductor device A20.

[0117] Third implementation method:

[0118] according to Figures 18-20 The semiconductor device A30 according to the third embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 18 With respect to semiconductor device A10 Figure 7 correspond. Figure 19 With respect to semiconductor device A10 Figure 8 correspond.

[0119] In semiconductor device A30, the structure of the plurality of first protective layers 23 and the plurality of second protective layers 24 differs from that of semiconductor device A10. Furthermore, semiconductor device A30 does not have the plurality of second pillars 42 and the plurality of fourth pillars 46.

[0120] like Figure 20 As shown, no second opening 232 is provided in each of the plurality of first protective layers 23. The second electrode 212 of each of the plurality of first semiconductor elements 21 is exposed from one side of the plurality of first protective layers 23 in the first direction z. The second electrode 212 of each of the plurality of first semiconductor elements 21 is electrically bonded to the first mounting surface 121A of the second base 121 of the second terminal 12 via the bonding layer 29.

[0121] Similar to the case of multiple first protective layers 23, no fourth opening 242 is provided in each of the multiple second protective layers 24. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is exposed from one side of each of the multiple second protective layers 24 in the first direction z. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is electrically bonded to the second mounting surface 111A of the first base 111 of the first terminal 11 via the bonding layer 29.

[0122] Next, the function and effect of the semiconductor device A30 will be explained.

[0123] Semiconductor device A30 includes: a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A30. Furthermore, semiconductor device A30, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0124] In semiconductor device A30, the second electrode 212 of the first semiconductor element 21 is electrically connected to the second terminal 12. By adopting this structure, the length of the conductive path between the second terminal 12 and the second electrode 212 is further shortened. As a result, parasitic inductance in semiconductor device A30 can be reduced.

[0125] Fourth implementation method:

[0126] according to Figures 21-23 The semiconductor device A40 according to the fourth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 21 With respect to semiconductor device A10 Figure 7 correspond. Figure 22 With respect to semiconductor device A10 Figure 8 correspond.

[0127] In semiconductor device A40, the structure of the plurality of first pillars 41 and the plurality of third pillars 45 is different from that of semiconductor device A30 described above.

[0128] like Figure 21 and Figure 22 As shown, a portion of each of the plurality of first pillars 41 is covered by one of the plurality of first protective layers 23. A portion of each of the plurality of third pillars 45 is covered by one of the plurality of second protective layers 24. Figure 23 As shown, in each of the plurality of first protective layers 23, the first opening 231 comprises a plurality of regions separated from each other in the first direction z. A plurality of first pillars 41 are respectively housed in the plurality of regions.

[0129] Next, the function and effect of the semiconductor device A40 will be explained.

[0130] Semiconductor device A40 includes: a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat dissipation component 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat dissipation component 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat dissipation component 31 are housed in the first flow path 541. The first heat dissipation component 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A40. Furthermore, semiconductor device A40, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0131] Fifth implementation method:

[0132] according to Figures 24-26 The semiconductor device A50 according to the fifth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 24 With respect to semiconductor device A10 Figure 3 correspond. Figure 25 With respect to semiconductor device A10 Figure 5 correspond.

[0133] In semiconductor device A50, the structure of the plurality of first protective layers 23 and the plurality of second protective layers 24 is different from that of semiconductor device A10.

[0134] like Figure 25 as well as Figure 26 As shown, multiple first protective layers 23 become a single component interconnected in the second direction x. Figure 24 as well as Figure 26 As shown, multiple second protective layers 24 also become a single component connected to each other in the second direction x.

[0135] Next, the function and effect of the semiconductor device A50 will be explained.

[0136] Semiconductor device A50 includes: a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A50. Furthermore, semiconductor device A50, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0137] In the semiconductor device A50, multiple first protective layers 23 are interconnected as a single component. By adopting this structure, multiple first semiconductor elements 21 are sealed by a single first protective layer 23. Thus, during the manufacture of the semiconductor device A50, positional displacement of the multiple first semiconductor elements 21 relative to the first terminal 11 and the second terminal 12 can be suppressed.

[0138] Sixth implementation method:

[0139] according to Figures 27-29 The semiconductor device A60 according to the sixth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 27 With respect to semiconductor device A10 Figure 3 correspond. Figure 28 With respect to semiconductor device A10 Figure 5 correspond.

[0140] In semiconductor device A60, the structure of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 is different from that of semiconductor device A10.

[0141] like Figure 27 and Figure 28 As shown, the number of both the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 is two. Figure 27 as well as Figure 29 As shown, when viewed in the first direction z, multiple second semiconductor elements 22 are separated from multiple first semiconductor elements 21.

[0142] Next, the function and effect of the semiconductor device A60 will be explained.

[0143] Semiconductor device A60 includes: a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A60. Furthermore, semiconductor device A60, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0144] In the semiconductor device A60, viewed in the first direction z, the second semiconductor element 22 is separated from the first semiconductor element 21. By adopting this structure, the heat distribution concentration in the first terminal 11 caused by the heat generated by the first semiconductor element 21 and the second semiconductor element 22 can be reduced.

[0145] Seventh implementation method:

[0146] according to Figures 30-33 The semiconductor device A70 according to the seventh embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted.

[0147] In semiconductor device A70, the structures of the second terminal 12 and the third terminal 13 differ from those in semiconductor device A10. Furthermore, semiconductor device A70 does not have multiple second heat dissipation components 32 and multiple fourth heat dissipation components 34.

[0148] like Figures 31-33 As shown, the second base 121 of the second terminal 12 has a first exposed surface 121B facing in the first direction z toward a side opposite to the side where the plurality of first semiconductor elements 21 are located. The first exposed surface 121B is exposed from the bottom surface 52 of the frame 50. The dimension of the second base 121 in the first direction z is larger than the dimension of the first base 111 of the first terminal 11 in the first direction z.

[0149] like Figure 30 , Figure 32 and Figure 33 As shown, the third base 131 of the third terminal 13 has a second exposed surface 131A facing in the first direction z toward the side opposite to the side where the plurality of second semiconductor elements 22 are located. The second exposed surface 131A is exposed from the top surface 51 of the frame 50. The dimension of the third base 131 in the first direction z is larger than the dimension of the first base 111 of the first terminal 11 in the first direction z.

[0150] Next, the function and effect of the semiconductor device A70 will be explained.

[0151] Semiconductor device A70 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A70. Furthermore, semiconductor device A70, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0152] In the semiconductor device A70, the second terminal 12 has a first exposed surface 121B facing in the first direction z toward the side opposite to the side where the first semiconductor element 21 is located. The third terminal 13 has a second exposed surface 131A facing in the first direction z toward the side opposite to the side where the second semiconductor element 22 is located. The first exposed surface 121B and the second exposed surface 131A are exposed from the housing 50. By adopting this structure, the size of the semiconductor device A70 in the first direction z can be further reduced.

[0153] Eighth implementation method:

[0154] according to Figures 34-39 The semiconductor device A80 according to the eighth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are labeled with the same symbols, and repeated descriptions are omitted. Figure 35 With respect to semiconductor device A10 Figure 2 correspond. Figure 36 With respect to semiconductor device A10 Figure 3 correspond. Figure 37 With respect to semiconductor device A10 Figure 5 correspond.

[0155] In semiconductor device A80, the structure of the first terminal 11, the second terminal 12, the third terminal 13, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, the fourth signal terminal 19, the frame 50, the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 is different from that of semiconductor device A10.

[0156] like Figure 36 and Figure 39As shown, the first expansion portion 112 of the first terminal 11 is located on the third y-direction side of the first base 111. (As...) Figure 34 and Figure 39 As shown, a portion of the first expansion 112 protrudes outward from the third side 533 of the frame 50.

[0157] like Figure 35 , Figure 37 and Figure 38 As shown, the second expansion portion 122 of the second terminal 12 and the third expansion portion 132 of the third terminal 13 are located on the opposite side of the first expansion portion 112 of the first terminal 11, with reference to the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the third direction y. Figure 34 , Figure 38 as well as Figure 39 As shown, a portion of each of the second expansion portion 122 and the third expansion portion 132 protrudes outward from the fourth side 534 of the frame 50. The second expansion portion 122 and the third expansion portion 132 are separated from each other in the second direction x.

[0158] like Figure 34 and Figure 37 As shown, the outer portion 162 of the first signal terminal 16 and the outer portion 172 of the second signal terminal 17 protrude outward from the first side 531 of the frame 50. Figure 34 As shown, the outer surface 182 of the third signal terminal 18 and the outer surface 192 of the fourth signal terminal 19 protrude outward from the first side 531.

[0159] like Figure 34 As shown, the inlet 55 of the frame 50 opens on the second side 532 of the frame 50. The outlet 56 of the frame 50 opens on the first side 531.

[0160] like Figures 37-39As shown, the plurality of first semiconductor elements 21 include a plurality of first switching elements 21A and a plurality of first diodes 21B. The plurality of first diodes 21B are connected in parallel with the plurality of first switching elements 21A. The plurality of first switching elements 21A each have a first electrode 211, a second electrode 212, and a first gate electrode 213. The plurality of first switching elements 21A are transistors such as MOSFETs and IGBTs. In the semiconductor device A80, the plurality of first switching elements 21A are, for example, MOSFETs. The plurality of first diodes 21B have a first electrode 211 as an anode and a second electrode 212 as a cathode. In the semiconductor device A80, the plurality of first diodes 21B function as freewheeling diodes for the plurality of first switching elements 21A. In the semiconductor device A80, the plurality of first diodes 21B are, for example, Schottky barrier diodes. A plurality of first pillars 41 are electrically connected to the first electrode 211 of one of the plurality of first switching elements 21A and the plurality of first diodes 21B. The multiple second pillars 42 are electrically connected to the second electrode 212 of one of the multiple first switching elements 21A and multiple first diodes 21B.

[0161] like Figure 36 , Figure 38 as well as Figure 39 As shown, the plurality of second semiconductor elements 22 include a plurality of second switching elements 22A and a plurality of second diodes 22B. The plurality of second diodes 22B are connected in parallel with the plurality of second switching elements 22A. The plurality of second switching elements 22A each have a third electrode 221, a fourth electrode 222, and a second gate electrode 223. The plurality of second switching elements 22A are the same elements as the plurality of first switching elements 21A. The plurality of second diodes 22B each have a third electrode 221 as an anode and a fourth electrode 222 as a cathode. In the semiconductor device A80, the plurality of second diodes 22B function as freewheeling diodes for the plurality of second switching elements 22A. The plurality of second diodes 22B are the same elements as the plurality of first diodes 21B. A plurality of third pillars 45 are electrically connected to the third electrode 221 of one of the plurality of second switching elements 22A and the plurality of second diodes 22B. A plurality of fourth pillars 46 are electrically connected to the fourth electrode 222 of one of the plurality of second switching elements 22A and the plurality of second diodes 22B.

[0162] Therefore, like the semiconductor device A80, the plurality of first semiconductor elements 21 can be configured to include not only all identical elements, but also a structure containing multiple elements. Similarly, the plurality of second semiconductor elements 22 can be configured to include not only all identical elements, but also a structure containing multiple elements.

[0163] Next, the function and effect of the semiconductor device A80 will be explained.

[0164] Semiconductor device A80 includes a first semiconductor element 21, a first terminal 11, a first pillar 41, and a first heat sink 31. The first pillar 41 is electrically connected to a first electrode 211 of the first semiconductor element 21. The first heat sink 31 is electrically connected to the first terminal 11. A first flow path 541 is provided between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first pillar 41 and the first heat sink 31 are housed in the first flow path 541. The first heat sink 31 is electrically connected to the first pillar 41. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A80. Furthermore, semiconductor device A80, by having a structure common to semiconductor device A10, achieves the same functional effect as semiconductor device A10.

[0165] This disclosure is not limited to the embodiments described above. The specific structure of each part of this disclosure can be freely modified in various ways.

[0166] This disclosure includes embodiments described in the following notes.

[0167] Postscript 1.

[0168] A semiconductor device having:

[0169] A first semiconductor element having a first electrode located on one side in a first direction;

[0170] The first terminal is opposite to the first electrode;

[0171] A first column, electrically connected to the first electrode; and

[0172] The first heat dissipation component is electrically connected to the first terminal.

[0173] In the first direction, a first flow path is provided between the first semiconductor element and the first terminal.

[0174] The first column and the first heat dissipation component are housed in the first flow path.

[0175] The first heat dissipation component is electrically connected to the first column.

[0176] Postscript 2.

[0177] According to the semiconductor device described in Appendix 1, wherein,

[0178] The semiconductor device also has a first protective layer that acts as an insulator.

[0179] The first protective layer covers at least a portion of the first semiconductor element.

[0180] Appendix 3.

[0181] According to the semiconductor device described in Appendix 2, wherein,

[0182] The first protective layer has a first opening for exposing the first electrode.

[0183] At least a portion of the first column is housed within the first opening.

[0184] Appendix 4.

[0185] According to the semiconductor device described in Appendix 3, wherein...

[0186] The first terminal is in contact with the first flow path.

[0187] Postscript 5.

[0188] According to the semiconductor device described in Appendix 4, wherein...

[0189] The dimension of the first column in the first direction is smaller than the dimension of the first heat dissipation component in the first direction.

[0190] Postscript 6.

[0191] According to the semiconductor device described in Appendix 5, wherein...

[0192] The first electrode is in contact with the first flow path.

[0193] Postscript 7.

[0194] According to the semiconductor device described in Appendix 6, wherein...

[0195] The size of the cross section of the first opening, which is orthogonal to the first direction, increases from the first electrode toward the first heat dissipation component.

[0196] Postscript 8.

[0197] According to the semiconductor device described in Appendix 5, wherein...

[0198] A portion of the first column is covered by the first protective layer.

[0199] Postscript 9.

[0200] The semiconductor device according to any one of Appendices 3 to 8, wherein,

[0201] The semiconductor device further includes: a second terminal, which is located on the opposite side of the first terminal, with reference to the first semiconductor element.

[0202] The first semiconductor element has a second electrode located on the side opposite to the first electrode in the first direction and connected to the second terminal.

[0203] Postscript 10.

[0204] According to the semiconductor device described in Appendix 9, wherein...

[0205] In the first direction, a second flow path is provided between the second terminal and the first flow path.

[0206] The second flow path is connected to the first flow path.

[0207] The second terminal is in contact with the second flow path.

[0208] Postscript 11.

[0209] According to the semiconductor device described in Appendix 10, wherein,

[0210] Viewed in the first direction, the first protective layer covers the entire periphery of the first semiconductor element.

[0211] Postscript 12.

[0212] According to the semiconductor device described in Appendix 11, wherein,

[0213] The semiconductor device further comprises: a second pillar electrically connected to the second electrode.

[0214] The second column is electrically connected to the second terminal.

[0215] The second column is housed in the second flow path.

[0216] Postscript 13.

[0217] According to the semiconductor device described in Appendix 12, wherein,

[0218] The first protective layer has a second opening for exposing the second electrode.

[0219] At least a portion of the second column is received within the second opening.

[0220] Postscript 14.

[0221] According to the semiconductor device described in Appendix 13, wherein...

[0222] A portion of the second flow path is located between the second terminal and the first protective layer in the first direction.

[0223] Postscript 15.

[0224] According to the semiconductor device described in Appendix 14, wherein,

[0225] The second electrode is in contact with the second flow path.

[0226] Postscript 16.

[0227] According to the semiconductor device described in Appendix 15, wherein,

[0228] The first protective layer is separated from the second terminal.

[0229] Postscript 17.

[0230] According to the semiconductor device described in Appendix 11, wherein,

[0231] The second electrode is electrically connected to the second terminal.

[0232] Postscript 18.

[0233] According to the semiconductor device described in Appendix 10, wherein,

[0234] The semiconductor device also has a frame.

[0235] The first terminal and the second terminal are supported by the frame.

[0236] The frame is provided with a hollow portion containing the first flow path and the second flow path.

[0237] Postscript 19.

[0238] According to the semiconductor device described in Appendix 18, wherein...

[0239] The semiconductor device further includes a second heat dissipation component connected to the second terminal.

[0240] The second heat dissipation component is located on the side opposite to the first semiconductor element, with the second terminal as a reference.

[0241] The second heat dissipation component is housed in the hollow portion.

[0242] Postscript 20.

[0243] A vehicle having:

[0244] Driver source; and

[0245] The semiconductor device described in Appendix 9,

[0246] The semiconductor device is connected to the driving source.

[0247] Postscript 21.

[0248] According to the semiconductor device described in Appendix 9, wherein...

[0249] The semiconductor device also has a first signal terminal.

[0250] The first semiconductor element has: a first gate electrode located on the same side as the first electrode in the first direction.

[0251] The first gate electrode is connected to the first signal terminal.

[0252] Postscript 22.

[0253] According to the semiconductor device described in Appendix 10, wherein,

[0254] The semiconductor device further comprises: a second semiconductor element, which is located on the opposite side of the first semiconductor element, with reference to the first terminal.

[0255] The second semiconductor element is connected to the first terminal.

[0256] Postscript 23.

[0257] According to the semiconductor device described in Appendix 22, wherein,

[0258] Viewed in the first direction, the second semiconductor element overlaps with the first semiconductor element.

[0259] Postscript 24.

[0260] According to the semiconductor device described in Appendix 22, wherein,

[0261] Viewed in the first direction, the second semiconductor element is separated from the first semiconductor element.

[0262] Postscript 25.

[0263] According to the semiconductor device described in Appendix 22, wherein,

[0264] The semiconductor device further includes a third terminal, which is located on the opposite side of the first terminal, with reference to the second semiconductor element.

[0265] The second semiconductor element is connected to the third terminal.

[0266] In the first direction, a third flow path is provided between the first terminal and the third terminal.

[0267] The second semiconductor element is housed in the third flow path.

[0268] Postscript 26.

[0269] According to the semiconductor device described in Appendix 25, wherein,

[0270] The second terminal and the third terminal are in contact with the third flow path.

[0271] Postscript 27.

[0272] According to the semiconductor device described in Appendix 26, wherein,

[0273] The semiconductor device further includes a third heat dissipation component electrically connected to the third terminal.

[0274] The second semiconductor element is connected to the third heat dissipation component.

[0275] The third heat dissipation component is housed in the third flow path.

[0276] Postscript 28.

[0277] According to the semiconductor device described in Appendix 27, wherein,

[0278] The semiconductor device further includes a fourth heat dissipation component connected to the third terminal.

[0279] The fourth heat dissipation component is located on the opposite side of the third heat dissipation component, with the third terminal as a reference.

[0280] Postscript 29.

[0281] According to the semiconductor device described in Appendix 11, wherein,

[0282] The first semiconductor element has: a first protective film located on the same side as the first electrode in the first direction;

[0283] Viewed in the first direction, the first protective film surrounds the periphery of the first electrode.

[0284] The first protective layer covers a portion of the first protective film.

[0285] Postscript 30.

[0286] According to the semiconductor device described in Appendix 16, wherein,

[0287] The dimension of the second column in the first direction is greater than the dimension of the first column in the first direction.

[0288] Postscript 31.

[0289] According to the semiconductor device described in Appendix 18, wherein...

[0290] The frame has an inlet and an outlet, which are respectively connected to the hollow section.

[0291] The inlet and the outlet are located on opposite sides of each other in a direction orthogonal to the first direction, with the first heat dissipation component as a reference.

[0292] Postscript 32.

[0293] According to the semiconductor device described in Appendix 31, wherein...

[0294] The second terminal has a first exposed surface that faces in the first direction toward a side opposite to the side where the first semiconductor element is located.

[0295] The first exposed surface is exposed from the frame.

[0296] Symbol Explanation

[0297] A10~A80: Semiconductor devices; B: Vehicles

[0298] 11: First terminal 111: First base

[0299] 111A: Second mounting surface; 112: First expansion section

[0300] 12: Second terminal; 121: Second base

[0301] 121A: Second mounting surface; 121B: First exposed surface

[0302] 122: Second expansion section; 13: Third terminal

[0303] 131: Third base 131A: Second exposed surface

[0304] 132: Third expansion section; 16: First signal terminal

[0305] 161: Internal 162: External

[0306] 17: Second signal terminal 171: Internal

[0307] 172: External 18: Third signal terminal

[0308] 181: Internal 182: External

[0309] 19: Fourth signal terminal; 191: Internal

[0310] 192: External 21: First semiconductor element

[0311] 21A: First switching element; 21B: First diode

[0312] 211: First electrode; 212: Second electrode

[0313] 213: First gate electrode; 214: First protective film

[0314] 22: Second semiconductor element; 22A: Second switching element

[0315] 22B: Second diode; 221: Third electrode

[0316] 222: Fourth electrode; 223: Second gate electrode

[0317] 224: Second protective film; 23: First protective layer

[0318] 231: First opening 232: Second opening

[0319] 24: Second protective layer; 241: Third opening

[0320] 242: Fourth opening; 29: Bonding layer

[0321] 31: First heat dissipation component; 32: Second heat dissipation component

[0322] 33: Third heat dissipation component; 34: Fourth heat dissipation component

[0323] 41: First column 42: Second column

[0324] 43: First gate pillar; 44: First detection pillar

[0325] 45: Third column 46: Fourth column

[0326] 47: Second gate pillar; 48: Second detection pillar

[0327] 50: Frame 51: Top surface

[0328] 52: Bottom surface; 531~534: First side surface~Fourth side surface

[0329] 54: Hollow part 541~543: First flow path~third flow path

[0330] 55: Inlet 56: Outlet

[0331] 61~64: First lead~Fourth lead; 70: Refrigerant

[0332] 81: Car charger 82: Battery

[0333] 83: Drive system 831: Inverter

[0334] 832: Driver source z: First direction

[0335] x: Second direction; y: Third direction.

Claims

1. A semiconductor device comprising: A first semiconductor element having a first electrode located on one side in a first direction; The first terminal is opposite to the first electrode; The first column is electrically connected to the first electrode; as well as The first heat dissipation component is electrically connected to the first terminal. In the first direction, a first flow path is provided between the first semiconductor element and the first terminal. The first column and the first heat dissipation component are housed in the first flow path. The first heat dissipation component is electrically connected to the first column.

2. The semiconductor device according to claim 1, wherein, The semiconductor device also has a first protective layer that acts as an insulator. The first protective layer covers at least a portion of the first semiconductor element.

3. The semiconductor device according to claim 2, wherein, The first protective layer has a first opening for exposing the first electrode. At least a portion of the first column is housed within the first opening.

4. The semiconductor device according to claim 3, wherein, The first terminal is in contact with the first flow path.

5. The semiconductor device according to claim 4, wherein, The dimension of the first column in the first direction is smaller than the dimension of the first heat dissipation component in the first direction.

6. The semiconductor device according to claim 5, wherein, The first electrode is in contact with the first flow path.

7. The semiconductor device according to claim 6, wherein, The size of the cross section of the first opening, which is orthogonal to the first direction, increases from the first electrode toward the first heat dissipation component.

8. The semiconductor device according to claim 5, wherein, A portion of the first column is covered by the first protective layer.

9. The semiconductor device according to any one of claims 3 to 8, wherein, The semiconductor device further includes: a second terminal, which is located on the opposite side of the first terminal, with reference to the first semiconductor element. The first semiconductor element has a second electrode located on the side opposite to the first electrode in the first direction and connected to the second terminal.

10. The semiconductor device according to claim 9, wherein, In the first direction, a second flow path is provided between the second terminal and the first flow path. The second flow path is connected to the first flow path. The second terminal is in contact with the second flow path.

11. The semiconductor device according to claim 10, wherein, Viewed in the first direction, the first protective layer covers the entire periphery of the first semiconductor element.

12. The semiconductor device according to claim 11, wherein, The semiconductor device further comprises: a second pillar electrically connected to the second electrode. The second column is electrically connected to the second terminal. The second column is housed in the second flow path.

13. The semiconductor device according to claim 12, wherein, The first protective layer has a second opening for exposing the second electrode. At least a portion of the second column is received within the second opening.

14. The semiconductor device according to claim 13, wherein, A portion of the second flow path is located between the second terminal and the first protective layer in the first direction.

15. The semiconductor device according to claim 14, wherein, The second electrode is in contact with the second flow path.

16. The semiconductor device according to claim 15, wherein, The first protective layer is separated from the second terminal.

17. The semiconductor device according to claim 11, wherein, The second electrode is electrically connected to the second terminal.

18. The semiconductor device of claim 10, wherein, The semiconductor device also has a frame. The first terminal and the second terminal are supported by the frame. The frame is provided with a hollow portion containing the first flow path and the second flow path.

19. The semiconductor device according to claim 18, wherein, The semiconductor device further includes a second heat dissipation component connected to the second terminal. The second heat dissipation component is located on the side opposite to the first semiconductor element, with the second terminal as a reference. The second heat dissipation component is housed in the hollow portion.

20. A vehicle having: Driver source; and The semiconductor device of claim 9, The semiconductor device is connected to the driving source.

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