Method, apparatus and control method for removing metal oxides from the surface of an organic substrate
CN122142032APending Publication Date: 2026-06-05AMBER INTELLIGENCE SEMICONDUCTOR EQUIPMENT (SHANGHAI) LTD (AISEC)
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- AMBER INTELLIGENCE SEMICONDUCTOR EQUIPMENT (SHANGHAI) LTD (AISEC)
- Filing Date
- 2026-05-08
- Publication Date
- 2026-06-05
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Figure CN122142032A_ABST
Abstract
The application discloses a method and device for removing metal oxide on the surface of an organic substrate and a control method thereof. The method comprises the following steps: step 1, providing an organic substrate and placing the organic substrate in a reaction chamber; step 2, introducing a process gas into the reaction chamber; the process gas comprises formic acid gas; step 3, heating the organic substrate to a process temperature, so that the process gas reacts with the metal oxide to generate gaseous products, thereby removing the metal oxide; wherein the heating rate of the organic substrate is less than or equal to 1.8 DEG C / s, and the process temperature is less than or equal to 250 DEG C. The metal oxide on the surface of the organic substrate is completely removed by slow heating, a low-temperature process and a flattening mechanism.
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