Method for constructing pressure regulation model and control method

By constructing a pressure regulation model based on chemical mechanical grinding equipment and utilizing the coupling effect between zones, the adjustment methods of the pressure regulation term are enriched, the shortcomings of the existing APC model in zone pressure regulation are solved, and more efficient global flattening control is achieved.

CN122142891APending Publication Date: 2026-06-05SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
Filing Date
2024-12-05
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

Existing APC models have limited means of adjusting zone pressure during chemical mechanical grinding (CMP), making it difficult to comprehensively and effectively regulate pressure and thus compromising the stability of global planarization in CMP.

Method used

A pressure regulation model based on a chemical mechanical polishing (CMP) device is constructed. By obtaining the correspondence between the pressure regulation term and the wafer partition polishing rate, an asymmetric pressure regulation model is established. By utilizing the coupling effect between partitions, the adjustment methods of the pressure regulation term are enriched, including the pressure adjustment of the holding ring.

Benefits of technology

It improves the accuracy of pressure regulation and the control capability of global flattening, removes the adjustment restriction of one-to-one correspondence between pressure regulation items and zones, and enhances the level of process control.

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    Figure CN122142891A_ABST
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Abstract

The application discloses a construction method and a control method of a pressure regulation model. The construction method comprises the following steps: acquiring sample data composed of the corresponding relationship between the pressure output by N pressure regulation items and the polishing rate of M partitions of a wafer; wherein M is a positive integer greater than 1; and establishing a first pressure regulation model based on the sample data, with the pressure output by the N pressure regulation items as the independent variable and the polishing rate of each partition as the dependent variable. The method eliminates the adjustment restriction that the pressure regulation items and the partitions are in one-to-one correspondence, enriches the adjustment means of the partition pressure, and more comprehensively and effectively performs pressure regulation.
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