Substrate self-rotating magnetron sputtering coating device and coating method for compensating target base distance

Abstract

The application provides a substrate self-rotation magnetron sputtering coating device and coating method for compensating target base distance, and relates to the technical field of magnetron sputtering equipment and process. The device comprises a vacuum cavity, a magnetron sputtering target source arranged in the vacuum cavity, and a substrate tray arranged in the vacuum cavity. The substrate tray is connected to a self-rotation driving system, and the self-rotation driving system is controlled by a control system. The self-rotation driving system is configured to drive the substrate tray to rotate at a constant speed during the coating process, so that the substrate tray can rotate through all regions from the target material to the farthest region in a sputtering time. Alternatively, the substrate tray is driven to rotate to a target azimuth angle and locked at the target azimuth angle for a preset time length according to a preset program, so as to actively compensate for the inherent film thickness difference of the partial region on the substrate. The uniformity of the magnetron sputtering is improved by the scheme.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering equipment technology, and more specifically, to a substrate rotation magnetron sputtering coating device and its method for compensating for uneven target-substrate distance. Background Technology

[0002] Magnetron sputtering is a key technique for preparing high-performance functional thin films, and one of the core evaluation indicators for film quality is the uniformity of film thickness. In the magnetron sputtering coating process, the ideal target-substrate distance should be a constant value, meaning the target surface and the substrate surface to be coated remain parallel. However, in actual equipment manufacturing and installation, factors such as installation accuracy, processing errors, thermal stress deformation, or uneven target erosion can lead to varying degrees of tilt or non-parallelism between the target surface and the substrate plane (i.e., uneven target-substrate distance).

[0003] This spatially fixed, uneven distribution of the target-substrate distance directly leads to a gradient distribution of sputtered particle flux density within the substrate plane. According to the basic principles of sputter deposition, the deposition rate is faster in areas closer to the target and slower in areas farther away, resulting in a systematic film thickness unevenness that gradually changes from one end to the other on the substrate, severely affecting product performance.

[0004] Traditional solutions often involve adjusting the angle of the target material through complex and expensive mechanical structures or using planetary rotating trays to try to improve this unevenness. However, the former has limited adjustment accuracy and cannot be dynamically compensated, while the latter is complex in structure, expensive, and introduces the eccentricity problem of the orbital system itself. Summary of the Invention The purpose of this invention is to provide a substrate rotation magnetron sputtering coating apparatus and method for compensating for uneven target-substrate distance. The apparatus achieves dynamic averaging of continuous uniform rotation and static time-sharing compensation by locking the angle according to a program through the same set of rotation mechanism, so as to adapt to different working conditions and improve film thickness uniformity.

[0005] The present invention adopts the following solution: A substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance includes: a vacuum chamber, a magnetron sputtering target source disposed within the vacuum chamber, and a substrate tray disposed within the vacuum chamber; the substrate tray is connected to a rotation drive system, which is controlled by a control system; wherein the rotation drive system is configured to drive the substrate tray to rotate continuously at a set speed during the coating process, so as to circulate through all regions from near to far of the target material within the sputtering time; or to drive the substrate tray to rotate to a target azimuth angle according to a preset program and lock it at the target azimuth angle for a preset time, so as to actively compensate for the inherent film thickness differences in some regions on the substrate.

[0006] Furthermore, the rotation drive system includes a drive device connected to the control system, a rotation spindle connected to the drive device, and a platform connected to the rotation spindle for carrying a tray, the platform being located within the vacuum chamber; and a heating device is provided between the platform and the tray.

[0007] Furthermore, the platform is provided with a fixing buckle for limiting the position of the tray.

[0008] Furthermore, the magnetron sputtering target source includes a target material and a magnetron sputtering gun head, and is equipped with a baffle to block sputtering particles during start-up, shutdown, or pre-sputtering phases.

[0009] Furthermore, the control system is a PLC control system, and the process parameters defined by the software Recipe include at least the rotation speed, azimuth sequence, holding time of each azimuth angle, and baffle opening and closing sequence.

[0010] This invention also provides a magnetron sputtering coating method for compensating for target-substrate unevenness, employing a dynamic integral averaging mode, including: S1. Fix the substrate onto the substrate tray and evacuate the vacuum. S2. Introduce process gas into the vacuum chamber; turn on the magnetron sputtering target source for sputtering. S3. During sputtering, the rotation drive system is controlled to drive the substrate tray to rotate continuously and uniformly at a set speed, so that any point on the substrate completes at least one angular traversal within the sputtering time. This allows for time-integrated averaging of the spatially fixed deposition rate distribution to obtain a thin film with uniform thickness. Furthermore, the set rotation speed is coordinated with the total sputtering time to enable the substrate to complete an integer or near-integer rotation, thereby reducing the impact of the start and end angle offset on uniformity.

[0011] This invention also provides a magnetron sputtering coating method for compensating for target-substrate unevenness, employing a static time-division compensation mode, including: A1. Determine the first azimuth angle based on the film thickness distribution or deposition rate distribution obtained from previous film thickness tests. With the second azimuth angle and corresponding sputtering time and ; A2. Lock the substrate tray at the first azimuth angle. and splash Time; then the substrate tray is rotated and locked at the second azimuth angle. and splash time; A3. By setting and The time ratio allows the initial thin area to have a longer deposition time during the compensation stage, thereby actively compensating for the film thickness difference caused by the uneven target-substrate distance.

[0012] Furthermore, the static time-sharing compensation mode includes multi-segment control: sequentially controlling at n azimuth angles. ( =1…n) respectively lock the sputtering time, Determined based on the film thickness distribution or deposition rate distribution.

[0013] Beneficial effects: Compared with the prior art, the present invention has at least the following beneficial effects: 1) Dual-mode control: It combines dynamic averaging and static compensation, which can both cope with unknown deviations and accurately compensate for known deviations; 2) Simplified structure: No complex revolution mechanism or adjustable target base is required, reducing manufacturing and maintenance costs and improving reliability; 3) High versatility: It can be integrated into existing magnetron sputtering equipment with minimal modification requirements; 4) Improve yield: Effectively improve film thickness gradient and map eccentricity issues, and enhance film uniformity and batch consistency. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the structure of a substrate rotation magnetron sputtering coating device for compensating target-substrate distance according to an embodiment of the present invention; Figure 2 This is a top view of the substrate placement area.

[0015] Figure label: 1. Process gas delivery pipeline; 2. Vacuum pressure gauge; 3. Vacuum chamber; 4. Sputtering power supply; 5. Cooling system; 6. Magnetron sputtering nozzle; 7. Target material; 8. Baffle; 9. Substrate; 10. Tray; 11. Heating device; 12. Stage; 13. Spinning spindle; 14. Drive device; 15. Control valve; 16. Vacuum pump; 17. Magnetohydrodynamic seal; 18. Control system; 19. Fixing buckle. Detailed Implementation

[0016] like Figure 1 and Figure 2 As shown, the coating apparatus of the present invention includes a vacuum coating chamber 3. The vacuum chamber 3 is evacuated by a vacuum pump 16, and the vacuum is regulated by a control valve 15. A vacuum pressure gauge 2 is used to monitor the pressure inside the chamber. Process gas enters the vacuum chamber 3 via a process gas delivery pipeline 1. A magnetron sputtering target source is disposed within the vacuum chamber 3, including a magnetron sputtering nozzle 6, a target material 7, and a target material cooling system 5. The target material 7 is powered by a sputtering power supply 4. A baffle 8 can be provided to control deposition during pre-sputtering or start-up / stop phases.

[0017] The substrate 9 is placed on the tray 10, and the tray 10 is clamped and fixed by the fixing buckle 19. The tray 10 is connected to the stage 12, and the stage 12 is connected to the rotating spindle 13; the rotating spindle 13 passes through the vacuum chamber 3 and is connected to the drive device 14. In order to achieve rotary transmission and ensure sealing in a vacuum environment, a magnetohydrodynamic seal 17 is preferably provided between the rotating spindle 13 and the vacuum chamber 3. Preferably, a heating device 11 can be provided between the stage 12 and the tray 10 for heating the substrate 9.

[0018] The drive unit 14 includes a control system 18, which controls the rotation of the substrate tray. Preferably, the drive unit 14 employs a servo motor and a matching driver, and is configured with an angle encoder to form a closed-loop control, thereby achieving lower speed fluctuations and higher angle repeatability. The control system 18 can define the process flow through a Recipe, including rotation speed, angle sequence, holding time for each angle, opening and closing sequence of the baffle 8, and power variations of the sputtering power supply 4.

[0019] The control system 18 can be implemented using a PLC (Programmable Logic Controller). A PLC is a digital computing and operating electronic system designed specifically for industrial applications. Designing the control system as a PLC control system can provide high reliability, strong anti-interference ability, good real-time performance, and ease of programming and maintenance, ensuring that all operation instructions in the coating process can be executed accurately and stably.

[0020] This embodiment defines various process parameters using a software Recipe. A software Recipe, or process formula, is a pre-defined program file containing a series of process parameters and operating steps. Defining process parameters using a software Recipe enables standardization, automation, and traceability of the coating process. The rotation speed refers to the rotational speed of the substrate tray in a uniform continuous rotation mode, expressed in revolutions per minute (RPM) or angular velocity (degrees per second). Defining this parameter in the software Recipe allows operators to flexibly set and adjust the speed at which the substrate circulates under the target material according to different coating requirements and substrate sizes, achieving a time-integral averaging of the deposition rate distribution. The azimuth sequence refers to the set of positions where the substrate tray needs to be rotated and locked to specific angles in static time-division compensation mode. For example, a sequence can be defined as […]. , , ..., ], each of which This represents a target azimuth angle. By defining an azimuth angle sequence using the Recipe software, targeted compensation can be achieved for film thickness differences in different regions of the substrate, such as rotating a thin area of ​​the substrate to a region with a higher target deposition rate. The holding time for each azimuth angle refers to the time the substrate tray is held at each target azimuth angle in the azimuth angle sequence. Locked-in time By defining these holding times using the software Recipe, the duration of sputtering on the substrate at a specific azimuth angle can be precisely controlled, thereby actively adjusting the film thickness increment in different regions. For example, for regions with initially thinner film thickness, a longer holding time can be set to obtain a greater deposition rate. The baffle opening and closing sequence refers to the time points or durations at which the baffle is opened and closed throughout the entire coating process. This includes the baffle closing time during the pre-sputtering stage, the baffle opening time at the start of formal sputtering, and the closing time at the end of coating or in abnormal situations. Defining the baffle opening and closing sequence using the software Recipe ensures effective shielding of sputtering particles when the target is not stably sputtered or the process is paused, preventing substrate contamination or affecting film quality, while ensuring the smooth progress of the formal coating stage. This also allows operators to easily set and switch between different coating modes (such as uniform continuous rotation mode and static time-sharing compensation mode) based on previous film thickness test results or specific compensation requirements, and to finely control the substrate's movement trajectory and dwell time under the target, as well as the baffle's opening and closing actions.

[0021] The coating apparatus of this embodiment, driven by the rotation of the tray 10, can address the problem of uneven film thickness caused by the uneven target-substrate distance in traditional magnetron sputtering. Through a uniform continuous rotation mode, each point on the substrate 9 is averaged over time during the sputtering period, thereby obtaining a uniform film. Alternatively, through a static time-division compensation mode, thin areas on the substrate can obtain a longer deposition time, compensating for inherent film thickness differences, improving film uniformity, and ultimately enhancing product performance.

[0022] Example 2 In one embodiment, a dynamic integral averaging mode is employed, and the method includes the following steps: First, the substrate is fixed onto the substrate tray and the vacuum chamber is evacuated. This step is a necessary preparation before magnetron sputtering coating. The substrate to be coated is securely mounted on the substrate tray, ensuring that it will not shift during subsequent rotation. Then, the vacuum chamber is evacuated using a vacuum pump to achieve the required base vacuum level for the process, thereby removing residual gases and impurities from the chamber and providing a clean, low-pressure environment for the subsequent sputtering process, preventing film contamination or undesirable reactions.

[0023] Next, process gas is introduced into the vacuum chamber, and the magnetron sputtering target source is activated for sputtering. Once the preset vacuum level is reached, the flow rate of the process gas (e.g., argon or reactive gas) is precisely controlled by a mass flow controller to ensure it enters the vacuum chamber and is maintained at the set operating pressure. Subsequently, the magnetron sputtering target source is activated, applying a high-voltage electric field to the target material to excite plasma within the process gas. Ions in the plasma bombard the target surface, sputtering target atoms, which are then deposited onto the substrate to form a thin film.

[0024] During sputtering, a control system drives the substrate tray to rotate continuously and uniformly at a set speed, ensuring that any point on the substrate completes at least one angular traversal within the sputtering time. This allows for time-integrated averaging of the spatially fixed deposition rate distribution, resulting in a film with uniform thickness. This step is the core of the dynamic integral averaging mode. The control system (e.g., the aforementioned PLC control system) precisely drives the rotation system, causing the substrate tray to rotate continuously at a preset constant speed throughout the sputtering process. In this way, any specific area on the substrate is exposed to different deposition rate regions of the magnetron sputtering target at different times. Over time, this continuous, uniform rotation effectively "integrates and averages" the deposition rate at each point on the substrate over time. In other words, the initially spatially non-uniform deposition rate distribution is transformed into a time-uniform average deposition rate through the continuous movement of the substrate, ultimately forming a highly uniform film thickness on the substrate surface. This time-integrated averaging mechanism can significantly compensate for film thickness differences caused by uneven target-substrate distance, localized target loss, or target characteristics, thereby obtaining a highly uniform film across the entire substrate surface. This method avoids the need for complex adjustments to the target source or cavity structure, and can achieve film thickness uniformity simply by optimizing the substrate motion trajectory. This greatly improves the stability of the coating process and the yield of thin film products, and has significant technical advantages for applications with strict requirements for film thickness uniformity.

[0025] Preferably, the set rotation speed is coordinated with the total sputtering time to ensure the substrate completes an integer or near-integer number of rotations, thereby reducing the impact of start and end angle offsets on uniformity. The total sputtering time refers to the duration from the start to the end of sputtering. The coordination of these two parameters ensures that the substrate can complete the expected number of rotations within a given sputtering time. For example, the control system can calculate the required set rotation speed based on the preset desired number of rotations and the total sputtering time, or determine the total sputtering time based on the set rotation speed and the preset desired number of rotations. This coordination can be achieved through an algorithm in the control system that receives the desired number of rotations and sputtering time input by the user, and then outputs a corresponding rotation speed command to the drive device, effectively avoiding the start and end angle offset problem caused by inconsistent substrate angles at the start and end of sputtering.

[0026] Example 3 This application further proposes a magnetron sputtering coating method for compensating for target-substrate unevenness, which adopts a static time-division compensation mode, including the following steps: First, based on the film thickness distribution or deposition rate distribution obtained from previous film thickness tests, the first azimuth angle is determined. With the second azimuth angle and corresponding sputtering time and Preliminary film thickness testing is fundamental for obtaining information on substrate film thickness unevenness. In practical applications, multiple sampling points can be preset on the substrate. After one or more standard coating processes, high-precision film thickness measurement equipment (e.g., ellipsometer, profilometer, X-ray fluorescence spectrometer, etc.) can be used to accurately measure the film thickness at these sampling points. By analyzing and processing this measurement data, a film thickness distribution map of the entire substrate surface can be constructed, or the deposition rate distribution of different regions can be derived. This data can clearly reveal which areas on the substrate have insufficient or excessive film thickness. Based on this film thickness distribution data, the control system or operator can analyze and determine the azimuth angle corresponding to the areas that require priority compensation. For example, the azimuth angle corresponding to the thinnest film area can be set as the first azimuth angle. And allocate a longer sputtering time to it. Set another area requiring compensation as the second azimuth angle. And allocate sputtering time Determining the azimuth angle and sputtering time is an optimization process aimed at achieving optimal uniformity in the final film thickness distribution through time-division sputtering.

[0027] Next, lock the substrate tray at the first azimuth angle. and splash Time; then the substrate tray is rotated and locked at the second azimuth angle. and splash Time. After determining the azimuth angle and time to be compensated, the self-rotation drive system will precisely rotate the substrate tray to the preset first azimuth angle. Once the azimuth angle is reached, the drive system locks it, ensuring the substrate remains stationary at that position. The magnetron sputtering target continues to operate during this period, sputtering and depositing material on the area of ​​the substrate corresponding to that azimuth angle for a duration of [duration missing]. The locking mechanism can be achieved through precise position control of the drive unit or mechanical braking. At the first azimuth angle... After sputtering is complete, the spin drive system will restart, moving the substrate tray from... Rotate to the preset second azimuth angle .arrive Then, the tray was locked again and proceeded with... Sputter deposition over time. This process can be repeated multiple times as needed to cover all areas requiring compensation.

[0028] Finally, through settings and The time ratio allows for a longer deposition time in the initial thin region during the compensation phase, thereby actively compensating for film thickness differences caused by uneven target-substrate distance. This is achieved by precisely calculating and adjusting the sputtering time at different azimuth angles ( , , ... This allows for control over the deposition rate in different regions. For example, if a region is thinner in the initial film thickness distribution, a relatively longer sputtering time is allocated during the compensation phase when the substrate tray rotates to the azimuth angle corresponding to that region, allowing it to achieve a higher deposition rate. This strategy directly addresses the problem of uneven film thickness by extending the residence time of thin areas directly below the sputtering source or in areas with higher deposition rates, effectively increasing the film thickness in those areas and gradually catching up with the film thickness in other areas. Uneven target-substrate distance is a common cause of uneven film thickness. Static time-sharing compensation mode, through targeted time allocation, can actively and locally increase or decrease the deposition rate, thereby offsetting the deposition rate differences caused by uneven target-substrate distance and ultimately achieving uniform film thickness across the entire substrate surface. This compensation is "active" because it is not a simple averaging but a directional correction based on pre-measured film thickness differences.

[0029] Through the above technical solution, this method overcomes the limitations of traditional uniform continuous rotation mode in handling local film thickness unevenness. By pre-obtaining the film thickness distribution or deposition rate distribution of the substrate and determining the azimuth angle and corresponding sputtering time required for compensation, the substrate tray can be locked at a specific azimuth angle for targeted sputtering. This static time-sharing compensation mode, by precisely controlling the sputtering time ratio at different azimuth angles, especially by extending the residence time of the initial thin area under the sputtering source, can actively and precisely increase the deposition amount in that area, thereby effectively compensating for local film thickness differences caused by uneven target-substrate distance. Ultimately, this method achieves refined control and optimization of the substrate film thickness distribution, significantly improving the overall uniformity of the film.

[0030] It should be noted that the static time-sharing compensation mode includes multi-segment control: it can sequentially control at n azimuth angles. ( =1…n) respectively lock the sputtering time, The determination is based on the film thickness distribution or deposition rate distribution. Multi-segment control refers to dividing the rotation period of the substrate tray into multiple discrete azimuth angle regions and independently controlling the sputtering time within each region. This control method can perform fine-grained time allocation at more azimuth points according to the actual film thickness distribution on the substrate, thereby more accurately compensating for complex film thickness non-uniformity. Its implementation is as follows: during the coating process, the control system drives the substrate tray to rotate sequentially to n preset azimuth angles. ( =1…n), and in each azimuth angle The system remains locked, and preset splashing is performed on each component. Time. For example, first lock the substrate tray at the first azimuth angle. and splash Time, then rotated and locked at the second azimuth angle. and splash The time interval continues in this manner until all n preset azimuth angles are completed. Splash Time. This segmented locking and sputtering method allows each azimuth region to obtain a deposition time that matches its film thickness requirements, thereby enabling precise local adjustment of the film thickness distribution.

[0031] Among them, the Based on the aforementioned film thickness distribution or deposition rate distribution, before implementing multi-segment control, it is necessary to obtain film thickness distribution or deposition rate distribution data on the substrate through preliminary testing or simulation. The control system uses this data to analyze the differences in film thickness or deposition rate in different azimuth regions on the substrate, and then calculates the thickness distribution for each azimuth angle. Required sputtering time For example, for regions with thinner films, the corresponding... The value will be relatively large to increase the deposition in that area; conversely, for areas with thicker films, The value will be relatively small. This dynamic time allocation mechanism based on actual distribution data ensures the targetedness and effectiveness of the compensation. This refined time allocation mechanism enables the coating process to locally compensate for any complex or irregular film thickness non-uniformity on the substrate. Therefore, even when facing film thickness differences caused by complex target-substrate distance unevenness, the overall uniformity of the film can be significantly improved through more flexible and precise control, thereby meeting the requirements for the preparation of highly uniform films.

[0032] Example 3 For local or systemic film thickness differences caused by complex factors such as uneven target-substrate distance, target aging, or incomplete asymmetry in sputtered particle distribution, a single dynamic integral averaging mode may be insufficient to achieve the desired fine uniformity. Furthermore, while static time-sharing compensation modes can provide precise compensation for specific regions, directly applying them to situations with significant initial film thickness distribution differences may require lengthy compensation times or complex parameter settings, and their efficiency in improving overall macroscopic uniformity is relatively low.

[0033] In response, this embodiment proposes an improved magnetron sputtering coating method, which first performs a dynamic integral averaging mode for coarse uniformity in the same coating process, and then performs a static time-division compensation mode for fine compensation.

[0034] In the initial stage of the coating process, the control system drives the rotation drive system to make the substrate tray rotate continuously and uniformly at a set speed. During this process, any point on the substrate completes at least one angular traversal within the sputtering time, thereby performing time-integrated averaging on the spatially fixed deposition rate distribution. This dynamic integrated averaging mode can efficiently eliminate macroscopic film thickness non-uniformity caused by variations in target size, shape, or target-substrate distance, quickly achieving initial homogenization of the film and providing a good foundation for subsequent fine compensation. For example, the set speed can be coordinated with the total sputtering time to make the substrate complete an integer or near-integer rotation, thereby reducing the impact of start and end angle offsets on uniformity.

[0035] After initial coarse homogenization, the coating process enters a static time-division compensation mode. In this stage, the control system, based on pre-acquired film thickness or deposition rate distribution (e.g., by measuring film thickness at multiple sampling points on the substrate and generating a film thickness map, then automatically or semi-automatically calculating the holding time parameters for each azimuth angle), determines the azimuth angle sequence requiring compensation and the corresponding sputtering time. Subsequently, the control system drives the rotation drive system to rotate the substrate tray to the first azimuth angle. And lock, proceed Sputtering over time; then, rotating and locking the substrate tray at the second azimuth angle. and splash The time interval is calculated sequentially, until compensation for all preset azimuth angles is completed. The static time-division compensation mode may include multi-segment control, i.e., sequentially at n azimuth angles. ( =1…n) respectively lock the sputtering Time, of which Determined based on the film thickness distribution or deposition rate distribution.

[0036] By combining the coarse uniformity capability of the dynamic integral averaging mode with the fine compensation capability of the static time-division compensation mode, the overall film thickness uniformity can be significantly improved. The dynamic integral averaging mode first quickly and efficiently eliminates macroscopic non-uniformity, laying the foundation for subsequent fine compensation. Based on this, the static time-division compensation mode can precisely correct residual local or systemic film thickness differences that the dynamic integral averaging mode failed to completely eliminate. This staged, collaborative strategy not only optimizes the efficiency and precision of the coating process but also enables the acquisition of high-quality, highly uniform films even when faced with complex target-substrate spacing or other factors causing film thickness differences, effectively solving the technical problem of achieving optimal uniformity under a single mode.

[0037] In this embodiment, obtaining the film thickness distribution includes measuring the film thickness at multiple sampling points on the substrate and generating a film thickness map. The control system automatically or semi-automatically calculates the holding time parameters for each azimuth angle based on the film thickness map. The film thickness distribution is obtained by selecting multiple representative sampling points on the substrate and measuring the film thickness at these sampling points using high-precision film thickness measurement equipment. These measuring devices can be spectroscopic ellipsometers, X-ray fluorescence spectrometers, profilometers, or optical interferometers, etc., which can provide accurate film thickness data. After the measurement is completed, these discrete film thickness data are interpolated and visualized using data processing software to generate an intuitive and quantitative film thickness map. This film thickness map clearly reflects the film thickness differences in different regions of the substrate surface.

[0038] Based on this, the control system, such as a PLC control system, is configured to automatically or semi-automatically calculate the holding time parameters for each azimuth angle in static time-sharing compensation mode, according to the generated film thickness map. In automatic calculation mode, the algorithm built into the control system analyzes the film thickness deviation in each region of the film thickness map and, based on the set sputtering rate, presets a compensation strategy (such as target film thickness, maximum allowable sputtering time, etc.) to intelligently allocate the sputtering time for each azimuth angle to achieve film thickness uniformity. In semi-automatic calculation mode, the control system can provide a user interface displaying the film thickness map and the preliminary calculated holding time parameters, allowing operators to fine-tune according to experience or specific needs, thereby achieving more flexible process control. The core of this calculation logic lies in effectively converting two-dimensional film thickness distribution information into a one-dimensional azimuth angle time series, ensuring that thin areas obtain longer deposition times and thick areas obtain relatively shorter deposition times.

[0039] The above technical solution enables precise and quantitative acquisition of film thickness distribution information on the substrate surface, overcoming the limitations of traditional methods that suffer from inaccurate film thickness distribution acquisition or reliance on experience-based judgment. Based on this, the control system automatically or semi-automatically calculates the holding time parameters for each azimuth angle according to the generated film thickness map. This eliminates the need for manual experience or tedious manual calculations during the compensation process, significantly improving the accuracy and efficiency of compensation. This intelligent calculation method based on actual film thickness data feedback ensures that the static time-sharing compensation mode can more accurately compensate for inherent film thickness differences on the substrate, thereby effectively improving the uniformity of the final film, simplifying the process debugging, and reducing reliance on operator experience.

[0040] It should be understood that the above are merely preferred embodiments of the present invention, and the scope of protection of the present invention is not limited to the above embodiments. All technical solutions that fall within the scope of the present invention are within the scope of protection of the present invention.

[0041] The accompanying drawings used in the above description of the embodiments only illustrate certain embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

Claims

1. A substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance, comprising: The invention comprises a vacuum chamber, a magnetron sputtering target disposed within the vacuum chamber, and a substrate tray disposed within the vacuum chamber; characterized in that the substrate tray is connected to a rotation drive system, the rotation drive system being controlled by a control system; wherein the rotation drive system is configured to drive the substrate tray to rotate continuously at a set rotation speed during the coating process, so as to circulate through all regions from near to far of the target material within the sputtering time; or to drive the substrate tray to rotate to a target azimuth angle according to a preset program and lock and maintain the target azimuth angle for a preset time, so as to actively compensate for the inherent film thickness differences in some regions on the substrate.

2. The substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance according to claim 1, characterized in that, The rotation drive system includes a drive device connected to the control system, a rotation spindle connected to the drive device, and a platform connected to the rotation spindle for carrying a tray, the platform being located inside the vacuum chamber; and a heating device is provided between the platform and the tray.

3. The substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance according to claim 2, characterized in that, The platform is equipped with a fixing buckle to limit the position of the tray.

4. The substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance according to claim 1, characterized in that, The magnetron sputtering target source includes a target material and a magnetron sputtering gun head, and is equipped with a baffle to block sputtering particles during start-up, shutdown, or pre-sputtering phases.

5. The substrate rotation magnetron sputtering coating apparatus for compensating target-substrate distance according to claim 4, characterized in that, The control system is a PLC control system, and the process parameters defined by the software Recipe include at least the rotation speed, azimuth sequence, holding time of each azimuth angle, and baffle opening and closing sequence.

6. A magnetron sputtering coating method for compensating for target-substrate unevenness using the apparatus according to any one of claims 1 to 5, characterized in that, The dynamic integral averaging model is adopted, including: S1. Fix the substrate onto the substrate tray and evacuate the vacuum. S2. Introduce process gas into the vacuum chamber; turn on the magnetron sputtering target source for sputtering. S3. During sputtering, control the rotation drive system to drive the substrate tray to rotate continuously at a set speed, so that any point on the substrate can complete at least one angular traversal within the sputtering time, thereby performing time integration averaging on the spatially fixed deposition rate distribution to obtain a thin film with uniform film thickness.

7. The coating method according to claim 6, characterized in that, The set rotation speed is coordinated with the total sputtering time to enable the substrate to complete an integer or near-integer rotation, thereby reducing the impact of the start and end angle offset on uniformity.

8. A magnetron sputtering coating method for compensating for target-substrate unevenness using the apparatus according to any one of claims 1 to 5, characterized in that, The static time-sharing compensation mode is adopted, including: A1. Determine the first azimuth angle based on the film thickness distribution or deposition rate distribution obtained from previous film thickness tests. With the second azimuth angle and corresponding sputtering time and ; A2. Lock the substrate tray at the first azimuth angle. and splash Time; then the substrate tray is rotated and locked at the second azimuth angle. and splash time; A3. By setting and The time ratio allows the initial thin area to have a longer deposition time during the compensation stage, thereby actively compensating for the film thickness difference caused by the uneven target-substrate distance.

9. The coating method according to claim 8, characterized in that, The static time-sharing compensation mode includes multi-segment control: sequentially at n azimuth angles. ( =1…n) respectively lock the sputtering time, Determined based on the film thickness distribution or deposition rate distribution.

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