一种基于石墨烯的自支撑GaN衬底的制备方法
By using graphene layer patterning and vapor deposition, non-destructive separation of GaN epitaxial layers from the substrate was achieved, solving the problem of strong interfacial adhesion and improving the growth quality and production efficiency of self-supporting GaN substrates.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU UNIV
- Filing Date
- 2026-05-06
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies, the interface bonding between the GaN epitaxial layer and the substrate is strong, making it difficult to achieve non-destructive peeling and easily introducing damage and defects, which affects the improvement of device performance.
The graphene layer is patterned to form window and mask regions. Combined with metal-organic chemical vapor deposition and hydride vapor phase epitaxy, the GaN substrate is non-destructively peeled off from the substrate by weak van der Waals forces, avoiding laser, chemical etching or mechanical force.
This technology enables non-destructive peeling of high-quality self-supporting GaN substrates, reducing production costs, improving growth quality and production efficiency, ensuring a smooth and crack-free surface, and reducing defect density.
Smart Images
Figure CN122147517B_ABST