Levelness detection device and levelness adjustment method, and semiconductor apparatus

Abstract

A level detection device and a level adjustment method, and a semiconductor device, the level detection device is used for detecting the level of a wafer carrier in a sealed environment same as a process treatment, comprising: a base, the base comprises a support seat and a top plate, the top plate is provided with a transparent window on the side away from the support seat or in the top plate; a height calibration block located directly below the transparent window; a laser ranging assembly, the laser ranging assembly comprises a plurality of laser transceiver components fixedly arranged on the side of the transparent window away from the accommodation cavity, the laser transceiver components are located directly above the transparent window and the height calibration block, and are used for obtaining a first vertical distance from the reference position of the laser transceiver components to the height calibration block and a second vertical distance from the reference position of the laser transceiver components to the wafer carrier or a wafer; and a reflection plate located in the accommodation cavity. Since the first vertical distance and the second vertical distance can be obtained in the sealed environment same as the process treatment, more accurate level information of the wafer carrier can be obtained.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a levelness detection device and levelness adjustment method, as well as semiconductor equipment. Background Technology

[0002] With the rapid growth of the integrated circuit (IC) industry, semiconductor technology, driven by Moore's Law, continues to advance towards smaller process nodes, enabling integrated circuits to develop in the direction of smaller size, higher circuit precision, and higher circuit complexity.

[0003] In semiconductor manufacturing processes, a common step is depositing thin films on wafers. As process nodes continue to shrink, the thickness of some critical thin films is also decreasing.

[0004] However, the quality of the deposited films still needs to be improved. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a levelness detection device and a levelness adjustment method, as well as a semiconductor device, to improve the quality of thin film deposition.

[0006] To address the aforementioned problems, this invention provides a levelness detection device for detecting the levelness of a wafer carrier disk beneath it in a sealed environment identical to the process flow. The levelness detection device includes: a base, the base comprising a top plate and a support seat located on either side of the top plate, the support seat and the top plate forming a receiving cavity; a transparent window is provided on the side of the top plate facing away from the support seat, or the top plate has a transparent window within it; the transparent window allows a laser pulse to pass through and is used to observe the degree of levelness deviation of the wafer carrier disk; one end of the support seat facing away from the top plate is used for a sealed connection with the top of the process cavity, so that the receiving cavity and the process cavity are connected... The system comprises: a height calibration block located within the receiving cavity directly below the transparent window and detachably connected to the base; a laser ranging assembly fixedly connected to the base via a laser ranging assembly holder, the laser ranging assembly including multiple laser transceivers fixedly disposed on the side of the transparent window facing away from the receiving cavity, the laser transceivers being located directly above the transparent window and the height calibration block, and used to obtain a first vertical distance from their reference position to the height calibration block, and a second vertical distance from their reference position to the wafer carrier or wafer; and a reflector located within the receiving cavity, with at least the surface of the reflector facing the wafer carrier being a reflective surface.

[0007] Optionally, if a transparent window is provided on the side of the top plate facing away from the support, a through hole is provided in the top plate, and a transparent plate covering the through hole is provided on the surface of the top plate facing away from the receiving cavity. The transparent plate is fixedly connected to the top plate by a connector and a sealing member.

[0008] Optionally, the top plate has a first surface and a second surface arranged opposite to each other; the support base is disposed on the second surface; the levelness detection device further includes: a heat insulation plate, which is fixedly installed on the first surface and disposed away from the transparent window.

[0009] Optionally, the transparent window includes: a first transparent window for allowing laser pulses to pass through, and a second transparent window for observing the degree of horizontal offset of the wafer carrier; the laser transceiver is located above the first transparent window; and the heat insulation plate covers the first transparent window.

[0010] Optionally, the levelness detection device further includes an air blowing assembly disposed near the laser transceiver component.

[0011] Optionally, the top plate has a through air inlet; the levelness detection device further includes an air inlet pipe located on the side of the top plate facing away from the support and intersecting with the air inlet to connect to the receiving cavity.

[0012] Optionally, the number of laser transceivers is three, and each laser transceiver is evenly arranged around the center of the top plate.

[0013] Accordingly, embodiments of the present invention also provide a semiconductor device, including: a levelness detection device as described in any embodiment of the present invention; a process cavity; and a wafer carrier device located within the process cavity below the levelness detection device.

[0014] Optionally, the number of laser transceivers in the levelness detection device is three, and each laser transceiver is evenly arranged around the center of the top plate; the wafer carrier device includes three levelness adjustment components, each corresponding to a laser transceiver and located directly below the corresponding laser transceiver.

[0015] Accordingly, embodiments of the present invention also provide a method for adjusting flatness, comprising: in a sealed environment identical to the process, using the semiconductor device described in any embodiment of the present invention, obtaining a first vertical distance from the reference position of each laser transceiver component to a height calibration block, and a first difference between each of the first vertical distances; disassembling the height calibration block of the flatness detection device; after disassembling the height calibration block of the flatness detection device, in a sealed environment identical to the process, obtaining a second vertical distance from the reference position of each laser transceiver component to a wafer carrier or a wafer, and a second difference between each of the second vertical distances; calculating a third difference between each of the first differences and the corresponding second differences; and in a sealed environment identical to the process, adjusting the flatness of the wafer carrier to a preset requirement based on the third difference.

[0016] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages: The levelness detection device provided in this invention is used to detect the levelness of a wafer carrier disk under a sealed environment identical to that of the process. The levelness detection device includes: a base, the base including a top plate and a support seat located on either side of the top plate, the support seat and the top plate forming a receiving cavity; a transparent window is provided on the side of the top plate facing away from the support seat, or the top plate has a transparent window; the transparent window is used for allowing laser pulses to pass through and for observing the degree of levelness deviation of the wafer carrier disk; the receiving cavity is connected and sealed to the process cavity; and the receiving cavity is located directly below the transparent window. The invention includes a height calibration block detachably connected to the base, and a laser ranging assembly fixedly connected to the base via a laser ranging assembly holder. The laser ranging assembly comprises multiple laser transceivers fixedly disposed on the side of the transparent window facing away from the receiving cavity. These transceivers are located directly above the transparent window and the height calibration block, and are used to acquire a first vertical distance from their reference position to the height calibration block and a second vertical distance from their reference position to the wafer carrier or wafer. A reflector is located within the receiving cavity, with at least one surface of the reflector facing the wafer carrier serving as a reflective surface. Because this invention can acquire the first vertical distance from the reference position of the laser transceiver to the height calibration block and the second vertical distance from the reference position of the laser transceiver to the wafer carrier or wafer within the same sealed environment as the process, and acquire the levelness of the wafer carrier below the levelness measuring device based on a first difference between the first vertical distances and a second difference between the second vertical distances, it helps to improve the accuracy of the acquired levelness information of the wafer carrier. Furthermore, the reflector located within the cavity can reflect the heat conducted from the wafer carrier area to the cavity area, making the temperature of the wafer carrier area closer to the actual process temperature while reducing the temperature of the level detection device. This helps to reduce the probability of the laser transceiver components exceeding their normal tolerance temperature and also helps to reduce the probability of operators suffering burns from high temperatures.

[0017] The semiconductor device provided in this embodiment includes a levelness detection device according to any embodiment of the present invention, and a wafer carrier device located below the levelness detection device. Since the levelness detection device can acquire the first vertical distance from the reference position of the laser transceiver component to the height calibration block and the second vertical distance from the reference position of the laser transceiver component to the wafer carrier or wafer under the same sealed environment as the process, and acquire the levelness of the wafer carrier below the levelness measurement device based on the first difference between each first vertical distance and the second difference between each second vertical distance, it is beneficial to improve the accuracy of the acquired levelness information of the wafer carrier. The semiconductor device can also adjust the levelness of the wafer carrier through the levelness adjustment component of the wafer carrier device under the same sealed environment as the process, so that the wafer carrier has better levelness during the process, thereby improving the uniformity and stability of the flow field within the process cavity during the process, and further improving the quality and uniformity of the formed film layer. Furthermore, since the transparent window also allows observation of the horizontal offset of the wafer carrier, the position of the ejector pins in the wafer carrier device can be monitored in real time during the adjustment of the wafer carrier's level, reducing the probability of pin damage due to incorrect adjustment of the wafer carrier's level. Moreover, the reflector plate located within the receiving cavity reflects heat conducted from the wafer carrier area to the receiving cavity area, making the temperature of the wafer carrier area closer to the actual process temperature while lowering the temperature of the level detection device. This helps reduce the probability of the laser transceiver components exceeding their normal operating temperature and also reduces the probability of operators suffering burns from high temperatures.

[0018] In the levelness adjustment method provided by this invention, under the same sealed environment as the process, using the semiconductor device of any embodiment of this invention, the first vertical distance from the reference position of each laser transceiver component to the height calibration block, and the first difference between each first vertical distance are obtained. After disassembling the height calibration block of the levelness detection device, under the same sealed environment as the process, the second vertical distance from the reference position of each laser transceiver component to the wafer carrier or wafer, and the second difference between each second vertical distance are obtained. A third difference between each first difference and the corresponding second difference is calculated. Under the same sealed environment as the process, the flatness of the wafer carrier is adjusted to a preset requirement according to the third difference, so that the wafer carrier has better levelness during the process, which is beneficial to improving the uniformity and stability of the flow field in the process cavity during the process, and thus beneficial to improving the quality and uniformity of the formed film layer. Furthermore, since the transparent window can also observe the degree of horizontal offset of the wafer carrier, the position status of the ejector pin of the wafer carrier device can be observed in real time during the adjustment of the levelness of the wafer carrier, reducing the probability of damage to the ejector pin due to incorrect adjustment of the levelness direction of the wafer carrier. Furthermore, the reflector located in the cavity can reflect the heat conducted from the wafer carrier area to the cavity area, making the temperature of the wafer carrier area closer to the actual process temperature while reducing the temperature of the level detection device. This helps to reduce the probability of the laser transceiver components exceeding the normal tolerance temperature and also helps to reduce the probability of operators being burned by high temperatures. Attached Figure Description

[0019] Figure 1 This is a top view schematic diagram of an embodiment of the levelness detection device of the present invention; Figure 2 yes Figure 1 Sectional view along AA1; Figure 3 This is a schematic diagram of an embodiment of the semiconductor device of the present invention in a levelness detection state; Figure 4 This is a schematic diagram of an embodiment of the semiconductor device of the present invention in a process state; Figure 5 This is a flowchart of an embodiment of the levelness adjustment method of the present invention. Detailed Implementation

[0020] In the wafer fabrication process, the levelness of the wafer carrier is crucial. Due to the high temperature and vacuum conditions, components within the process cavity expand due to heat, causing their elasticity to change with temperature. This can easily lead to levelness deviations in the wafer carrier, which is already horizontal in an atmospheric environment. Such deviations result in uneven spacing between the wafer carrier and the components above it (e.g., the showerhead), which in turn affects the uniformity and stability of the flow field between the wafer carrier and the showerhead, ultimately impacting the quality and uniformity of the film layer.

[0021] If the level of the wafer carrier disk needs to be adjusted in a vacuum and high-temperature environment, blind adjustment must be performed with the process cavity closed. Blind adjustment is not only difficult to operate, but it can also easily cause the lift pins on the wafer carrier disk to break.

[0022] To address the aforementioned technical problems, this invention provides a levelness detection device for detecting the levelness of a wafer carrier disk beneath it in a sealed environment identical to the process flow. The levelness detection device includes: a base, which includes a top plate and a support seat located on either side of the top plate. The support seat and the top plate form a receiving cavity. A transparent window is provided on the side of the top plate facing away from the support seat, or alternatively, a transparent window is provided within the top plate. The transparent window allows a laser pulse to pass through and is used to observe the degree of levelness deviation of the wafer carrier disk. The receiving cavity is connected to and sealed within the process cavity, and is located directly below the transparent window. The invention includes a height calibration block within a receiving cavity, detachably connected to a base, and a laser ranging assembly fixedly connected to the base via a laser ranging assembly holder. The laser ranging assembly comprises multiple laser transceivers fixedly disposed on the side of a transparent window facing away from the receiving cavity. These transceivers are located directly above the transparent window and the height calibration block, and are used to acquire a first vertical distance from their reference position to the height calibration block and a second vertical distance from their reference position to the wafer carrier or wafer. A reflector is located within the receiving cavity, with at least the surface of the reflector facing the wafer carrier being a reflective surface. Because this invention can acquire the first vertical distance from the reference position of the laser transceiver to the height calibration block and the second vertical distance from the reference position of the laser transceiver to the wafer carrier or wafer within the same sealed environment as the process, and acquire the levelness of the wafer carrier below the levelness measuring device based on a first difference between the first vertical distances and a second difference between the second vertical distances, it helps to improve the accuracy of the acquired levelness information of the wafer carrier. Furthermore, the reflector located in the cavity can reflect the heat conducted from the wafer carrier area to the cavity area, making the temperature of the wafer carrier area closer to the actual process temperature while reducing the temperature of the level detection device. This helps to reduce the probability of the laser transceiver components exceeding the normal tolerance temperature and also helps to reduce the probability of operators being burned by high temperatures.

[0023] This invention also provides a semiconductor device, including a levelness detection device according to any embodiment of the invention, and a wafer carrier device located below the levelness detection device. The semiconductor device can adjust the levelness of the wafer carrier device via a levelness adjustment component within the same sealed environment as the process, ensuring optimal levelness during processing. This improves the uniformity and stability of the flow field within the process cavity, thereby enhancing the quality and uniformity of the formed film. Furthermore, since the transparent window allows observation of the wafer carrier's horizontal offset, the position of the ejector pins in the wafer carrier device can be monitored in real time during levelness adjustment, reducing the probability of pin damage due to incorrect adjustment of the wafer carrier's levelness. Moreover, the reflector within the receiving cavity reflects heat conducted from the wafer carrier area to the receiving cavity area, ensuring the wafer carrier area temperature is closer to the actual process temperature while lowering the temperature of the levelness detection device. This reduces the probability of the laser transceiver exceeding its normal operating temperature and minimizes the risk of burns to operators.

[0024] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0025] Figure 1 This is a top view schematic diagram of an embodiment of the levelness detection device of the present invention. Figure 2 yes Figure 1 Sectional view along AA1.

[0026] refer to Figures 1 to 2The levelness detection device 10 is used to detect the levelness of the wafer carrier disk below it (i.e., the levelness detection device 10) in a sealed environment identical to the process. The levelness detection device 10 includes: a base 100, which includes a top plate 101 and a support 102 located on either side of the top plate 101. The support 102 and the top plate 101 form a receiving cavity 105. A transparent window 110 is provided on the side of the top plate 101 facing away from the support 102, or the top plate 101 has a transparent window 110. The transparent window 110 is used to allow laser pulses to pass through and to observe the degree of levelness deviation of the wafer carrier disk. The end of the support 102 facing away from the top plate 101 is used for a sealed connection with the top of the process cavity so that the receiving cavity 105 is in communication with the process cavity; and a height calibration block 120. The laser ranging assembly 130 is located in the receiving cavity 105 directly below the transparent window 110 and is detachably connected to the base 100. The laser ranging assembly 130 is fixedly connected to the base 100 via a laser ranging assembly holder 135. The laser ranging assembly 130 includes a plurality of laser transceiver components 131 fixedly disposed on the side of the transparent window 110 facing away from the receiving cavity 105. The laser transceiver components 131 are located directly above the transparent window 110 and the height calibration block 120, and are used to obtain the first vertical distance from their reference position (i.e., the reference position of the laser transceiver component 131) to the height calibration block 120, and to obtain the second vertical distance from their reference position to the wafer carrier or the wafer. The reflector 140 is located in the receiving cavity 105, and at least the surface of the reflector 140 facing the wafer carrier is a reflective surface 141.

[0027] Wherein, at least the surface of the reflector 140 facing the wafer carrier is a reflective surface 141, meaning that: the surface of the reflector 140 facing the wafer carrier is a reflective surface, or both the surface of the reflector 140 facing the wafer carrier and the surface facing away from the wafer carrier are reflective surfaces. The reference position of the laser transceiver component 131 refers to the measurement starting point of the laser ranging component 130.

[0028] It should be noted that the sealing environment during wafer carrier level testing is the same as the sealing environment during process processing, which means at least the sealing environment pressure during testing is the same as the sealing environment pressure during process processing.

[0029] It should also be noted that the sealing environment for detecting the level of the wafer carrier is the same as the sealing environment during the process, which may include one or more of the following: the temperature of the sealing environment for detecting the level of the wafer carrier is the same as the temperature of the sealing environment during the process; the type of gas in the sealing environment for detecting the level of the wafer carrier is the same as the type of gas in the sealing environment during the process; the gas flow rate in the sealing environment for detecting the level of the wafer carrier is the same as the gas flow rate in the sealing environment during the process.

[0030] The base 100 provides the technological basis for setting up the transparent window 110, the laser transceiver 131, the height calibration block 120, and the reflector 140. Specifically, the top plate 101 provides the technological basis for setting up the transparent window 110 and the laser transceiver 131; the support base 102 provides the technological basis for setting up the height calibration block 120; and the receiving cavity 105 formed by the top plate 101 and the support base 102 is used to receive the reflector 140.

[0031] In some embodiments, the base 100 is made of a metal, such as one or more of aluminum alloy, stainless steel, and Hastelloy. In other embodiments, the base may be made of other suitable metals.

[0032] Metals have the characteristic of high temperature resistance, which helps to improve the service life of the levelness detection device 10.

[0033] In some embodiments, the top plate 101 has a first surface 1018 and a second surface 1019 disposed opposite to each other; the support base 102 is disposed on the second surface 1019.

[0034] In some embodiments, a first sealing ring 106 is provided in the end face of the support base 102 facing away from the top plate 101. The first sealing ring 106 is used to seal the receiving cavity 105 with the process cavity.

[0035] In some embodiments, when a transparent window 110 is provided on the side of the top plate 101 facing away from the support base 102, a through hole 1011 is provided in the top plate 101, and a transparent plate 1012 covering the through hole 1011 is provided on the surface of the top plate 101 facing away from the receiving cavity 105. The transparent plate 1012 is fixedly connected to the top plate 101 through a cover plate 1013 and a sealing element (i.e., a first sealing element) (not shown).

[0036] The transparent panel 1012 is installed on the top plate 101, which facilitates the replacement of the transparent panel 1012.

[0037] Specifically, a cover plate 1013 is provided on the top surface of the transparent plate 1012 (i.e., the side of the transparent plate 1012 facing away from the top plate 101), a buffer pad 1014 is provided between the cover plate 1013 and the transparent plate 1012, and a second sealing ring 1015 is provided between the bottom surface of the transparent plate 1012 (i.e., the side of the transparent plate 1012 facing the top plate 101) and the top plate 101; the cover plate 1013 is fixed to the top plate 101 by bolts, and presses the second sealing ring 1015 and the transparent plate 1012 to achieve a vacuum seal between the transparent plate 1012 and the top plate 101.

[0038] More specifically, the cover plate 1013 is made of metal. The cushioning pad 1014 may be made of expanded polytetrafluoroethylene (EPTFE) or the like.

[0039] It should be noted that the transparent plate 1012 is made of quartz glass. In other embodiments, the transparent plate may also be made of other transparent and heat-resistant materials.

[0040] In other embodiments, when a transparent window is provided in the top plate, the top plate has a transparent panel, and a seal is provided between the transparent panel and the top plate.

[0041] In some embodiments, the top plate 101 has a through air inlet 103; the levelness detection device 10 further includes an air inlet pipe (gasline) 160, located on the side of the top plate 101 facing away from the support base 102 and penetrating the air inlet 103 to communicate with the receiving cavity 105.

[0042] The air inlet pipe 160 is used to introduce gas into the receiving cavity 105 and the process cavity communicating with the receiving cavity 105, so that the receiving cavity 105 and the process cavity are in the same sealed environment as the process, for example, to make the receiving cavity 105 and the process cavity in a sealed environment with the same pressure as the process.

[0043] In other embodiments, gas can also be introduced into the sealed space formed by the interconnected receiving cavity and the process cavity through the air inlet on the process cavity.

[0044] Specifically, the intake pipe 160 is sealed to the top plate 101 surrounding the intake port 103 via a sealing ring.

[0045] It should be noted that the gas introduced into the receiving cavity 105 and the process cavity communicating with the receiving cavity 105 includes inert gases, such as argon (Ar) and nitrogen (N2).

[0046] The height calibration block 120 is used to provide a process basis for obtaining the first vertical distance.

[0047] It should also be noted that the height calibration block 120 is made of metal. Metal has a small elastic deformation and is not easily deformed, which helps to improve the service life of the height calibration block 120. As an example, the material of the height calibration block 120 includes aluminum alloy, stainless steel, etc.

[0048] In some embodiments, a step 104 is provided on the support base 102, and a height calibration block 120 is disposed on the step 104 and fixedly connected to the base 100. The step 104 can limit the height calibration block 120, thereby improving the positional accuracy of the height calibration block 120 and reducing the difficulty of setting the height calibration block 120.

[0049] Specifically, there are multiple steps 104; there are multiple height calibration blocks 120, and the height calibration blocks 120 are set on the corresponding steps 104; the laser transceiver component 131 corresponds one-to-one with the height calibration block 120.

[0050] It is understandable that all steps 104 are located on the same horizontal plane. The faces of all height calibration blocks 120 facing the laser transceiver unit 131 are also located on the same horizontal plane.

[0051] In other embodiments, the number of steps may be one and circular; the number of height calibration blocks may also be one and circular. A certain position on the height calibration block of the laser transceiver unit corresponds to this position.

[0052] The laser ranging component 130 is used to obtain a first vertical distance from its reference position to the height calibration block, and a second vertical distance from its reference position to the wafer carrier or wafer.

[0053] Because the present invention can obtain the first vertical distance from the reference position of the laser transceiver 131 to the height calibration block 120 and the second vertical distance from the reference position of the laser transceiver 131 to the wafer carrier or wafer in the same sealed environment as the process, it can obtain the levelness of the wafer carrier below the levelness measuring device based on the first difference between each first vertical distance and the second difference between each second vertical distance, thereby improving the accuracy of the obtained levelness information of the wafer carrier.

[0054] In some embodiments, the laser ranging component 130 includes a data processing controller (not shown) and a laser transceiver component 131. The laser transceiver component 131 includes a laser emitter, an imaging objective, a photoelectric potential-sensitive receiver, and a charge-coupled device (CCD).

[0055] The laser emits laser pulses, which are reflected and scattered by the wafer carrier disk. Some of the scattered light returns to the photoelectric potential-sensitive receiver and is imaged onto the charge-coupled device (CCP). The CCP identifies the position of the target object by the peak value of the light distribution, thereby achieving high-precision displacement measurement.

[0056] It should be noted that the laser transceiver component 131 can be a laser sensor that uses a reflective operating mode.

[0057] As an example, the laser rangefinder 130 has a range of 50 mm to 500 mm.

[0058] In some embodiments, the number of laser transceiver components 131 is three, and each laser transceiver component is evenly arranged around the center of the top plate 101. The number of laser transceiver components 131 is three, which helps to avoid the limitations of local measurement and obtain more accurate information on the levelness of the wafer carrier when the number of laser transceiver components 131 is small.

[0059] The laser transceiver components are evenly arranged around the center of the top plate 101, which helps to improve the uniformity of the force on the base 100, thereby giving the base 100 better levelness.

[0060] In other embodiments, the number of laser transceivers is three, and the three laser transceivers are not located on the same straight line.

[0061] In other embodiments, the number of laser transceivers can also be greater than 3, such as 4, 5, 6, etc., and at least 3 laser transceivers are not located on the same straight line, which helps to avoid the limitations of local measurement and obtain more accurate information on the levelness of the wafer carrier.

[0062] In some embodiments, the levelness detection device 10 further includes a laser rangefinder assembly holder 135, one end of which is fixedly connected to the edge of the top plate 101, and the other end is fixedly connected to the laser transceiver component 131, so that the laser transceiver component 131 is located directly above the transparent window 110 and the height calibration block 120.

[0063] The reflector 140 can reflect the heat conducted from the wafer carrier area to the cavity 105 area, reducing heat loss from the wafer carrier area. This makes the temperature of the wafer carrier area closer to the actual process temperature, while also reducing the temperature of the level detection device 10. This helps to reduce the probability that the laser transceiver 131 exceeds the normal tolerance temperature, and also helps to reduce the probability that the operator will be burned by high temperature.

[0064] In some embodiments, the number of reflectors 140 is multiple, which is beneficial to the better effect of reflecting the heat conducted from the wafer carrier area to the cavity 105 area.

[0065] Specifically, the surface of the reflector 140 facing the wafer carrier is the reflective surface 141, or both the surface of the reflector 140 facing the wafer carrier and the surface facing away from the wafer carrier are reflective surfaces 141.

[0066] The reflector 140 has a reflective surface 141 on the side facing the wafer carrier, which helps to reduce the manufacturing cost of the reflector 140.

[0067] The reflector 140 has a reflective surface 141 on both the side facing the wafer carrier and the side facing away from the wafer carrier, which helps to further reduce heat loss in the wafer carrier area.

[0068] It should be noted that the gap between adjacent reflectors 140 should not be too small or too large. If the gap between adjacent reflectors 140 is too small, it will increase the probability of them contacting each other, resulting in heat conduction between them. If the gap between adjacent reflectors 140 is too large, it will result in an excessively large height of the receiving cavity 105, which in turn will lead to a larger height of the support 102, thus increasing the cost of manufacturing the support 102. Therefore, as an example, the gap between adjacent reflectors ranges from 2 mm to 6 mm.

[0069] In some embodiments, the reflector 140 is made of metal. Metal has the characteristic of high temperature resistance, which is beneficial to improving the service life of the reflector 140. As an example, the material of the reflector 140 includes aluminum alloy. Aluminum alloy has a low density, which is beneficial to reducing the weight of the reflector 140, thereby reducing the difficulty of setting up the reflector 140.

[0070] It should be noted that the reflective surface 141 is a polished metal mirror or a metal coating; that is, the reflective surface 141 is a mirror formed by polishing a metal substrate, or a metal coating deposited on the surface of the substrate. Polished metal mirrors have lower manufacturing costs; metal coatings have better heat insulation effects.

[0071] It is understandable that neither the light transmission nor the light receiving path of the laser transceiver component 131 can be blocked. Therefore, as an example, such as Figure 2 As shown, the reflector 140 has a through hole 1311 for the laser transceiver 131 to pass through. As another example, the reflector may not have a through hole, and the reflector may be detachably connected to the base.

[0072] In some embodiments, the top plate 101 has a first surface 1018 and a second surface 1019 disposed opposite to each other; the support base 102 is disposed on the second surface 1019; the levelness detection device 10 further includes: a heat insulation plate 150, which is fixedly installed on the first surface 1018 and disposed away from the transparent window 110.

[0073] The heat insulation plate 150 is used to reduce the temperature of the top plate 101 on the side facing away from the support base 102, thereby further reducing the probability of operators being burned by high temperature.

[0074] Specifically, the transparent window 110 includes: a first transparent window 111 for laser pulses to pass through, and a second transparent window 112 for observing the degree of horizontal offset of the wafer carrier; the laser transceiver 131 is located above the first transparent window 111; the heat insulation plate 150 covers the first transparent window 111.

[0075] The first transparent window 111 covered by the heat insulation plate 150 increases the area of ​​the top plate 101 covered by the heat insulation plate 150, thereby improving the effectiveness of the heat insulation plate 150 in reducing the temperature of the side of the top plate 101 facing away from the support base 102. In some embodiments, the heat insulation plate 150 does not cover the first transparent window.

[0076] More specifically, the first transparent window 111 and the second transparent window 112 are arranged alternately around the center of the top plate 101, and each of the second transparent windows 112 is evenly arranged on the same circumference with the center of the top plate 101 as the center.

[0077] It should be noted that a protrusion 1016 is provided on the first surface of the top plate 101, and the heat insulation plate 150 is provided on the protrusion 1016. This helps to reduce the contact area between the heat insulation plate 150 and the protrusion 1016, thereby reducing the heat conduction between the top plate 101 and the heat insulation plate 150, and thus further reducing the temperature of the side of the top plate 101 facing away from the support base 102.

[0078] It should also be noted that the material of the heat insulation panel 150 is an engineering plastic, such as one or both of polyetheretherketone and polyetherimide.

[0079] Engineering plastics have good thermal insulation properties, as well as good toughness and impact resistance, making them less prone to breakage, which helps to extend the service life of the insulation board 150.

[0080] In some embodiments, the levelness detection device 10 further includes an air blowing assembly 170, which is disposed near the laser transceiver component 131.

[0081] The air blowing assembly 170 is used to reduce the ambient temperature of the laser transceiver 131 during operation, thereby further reducing the probability that the laser transceiver 131 exceeds its normal operating temperature. Furthermore, while reducing the ambient temperature of the laser transceiver 131 during operation, the air blowing assembly 170 also helps reduce the probability of operators suffering burns from high temperatures.

[0082] Accordingly, the present invention also provides a semiconductor device. Figure 3 This is a schematic diagram of an embodiment of the semiconductor device of the present invention in a levelness detection state. Figure 4 This is a schematic diagram of an embodiment of the semiconductor device of the present invention in a process state.

[0083] refer to Figures 3 to 4 and in conjunction with references Figures 1 to 2 The semiconductor device 1 includes: a levelness detection device 10 as in any embodiment of the present invention; a process cavity 200; and a wafer carrier device 210 located in the process cavity 200 below the levelness detection device 10.

[0084] Because the levelness detection device 10 can acquire the first vertical distance from the reference position of the laser transceiver component 131 to the height calibration block and the second vertical distance from the reference position of the laser transceiver component 131 to the wafer carrier or wafer in the same sealed environment as the process, and acquire the levelness of the wafer carrier 212 below the levelness measurement device 10 based on the first difference between each first vertical distance and the second difference between each second vertical distance, it is beneficial to improve the accuracy of the acquired levelness information of the wafer carrier 212. The semiconductor device 1 can also adjust the levelness of the wafer carrier 212 through the levelness adjustment component 211 of the wafer carrier device 210 in the same sealed environment as the process, so that the wafer carrier 212 has better levelness during the process, which is beneficial to improve the uniformity and stability of the flow field in the process cavity during the process, and thus beneficial to improve the quality and uniformity of the formed film layer. Furthermore, since the transparent window 110 can also observe the horizontal offset of the wafer carrier, the position of the ejector pin 213 of the wafer carrier device 210 can be observed in real time during the adjustment of the wafer carrier's level. This reduces the probability of damage to the ejector pin 213 due to incorrect adjustment of the wafer carrier's level direction. Moreover, the reflector plate 140 located within the receiving cavity 105 can reflect heat conducted from the wafer carrier area to the receiving cavity 105 area. This makes the temperature of the wafer carrier 212 area closer to the actual process temperature while reducing the temperature of the level detection device 10. This helps reduce the probability of the laser transceiver component 131 exceeding its normal tolerance temperature and also helps reduce the probability of operators suffering burns from high temperatures.

[0085] It should be noted that for a detailed description of each component in the levelness detection device 10, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.

[0086] The process cavity 200 is used to provide space for process handling.

[0087] The wafer carrier device 210 is used to provide a process platform for processing wafers.

[0088] In some embodiments, the wafer carrier device 210 includes a wafer carrier 212 and a leveling adjustment member 211 located below the wafer carrier 212.

[0089] The wafer carrier 212 is used to carry the wafer; the leveling adjustment component 211 is used to adjust the level of the wafer carrier 212.

[0090] Specifically, in the levelness detection state, the wafer carrier device 210 is located below the levelness detection device 10.

[0091] It should be noted that the leveling adjustment component 211 includes a micrometer or set screw structure, etc.

[0092] In some embodiments, the number of laser transceiver components 131 is multiple, and at least three laser transceiver components 131 are not located on the same straight line; the wafer carrier device includes three leveling adjustment components.

[0093] In other embodiments, the number of laser transceivers is three, and the three laser transceivers are not located on the same straight line.

[0094] As an example, the levelness detection device 10 has three laser transceiver components 131, and each laser transceiver component 141 is evenly arranged around the center of the top plate 101; the wafer carrier device 210 includes three levelness adjustment components 211, each corresponding to a laser transceiver component 131 and located directly below the corresponding laser transceiver component 131, so as to obtain a third difference between the first difference and the second difference based on the first difference between each first vertical distance and the second difference between each second vertical distance, thereby adjusting the corresponding levelness adjustment component 211 according to the third difference, so that the corresponding first difference and the second difference are equal.

[0095] In some embodiments, the semiconductor device 1 further includes a gas equalization disk 220, which is located above the wafer carrier disk 212 in the process state. Accordingly, the spacing between the wafer carrier disk 212 and the gas equalization disk 220 above it is relatively uniform, and the uniformity and stability of the flow field between the wafer carrier disk 212 and the gas equalization disk 220 are improved.

[0096] As an example, semiconductor devices are chemical vapor deposition (CVD) devices or atomic layer deposition (ALD) devices.

[0097] Accordingly, the present invention also provides a method for adjusting the levelness. Figure 5 This is a flowchart of an embodiment of the crystal level adjustment method of the present invention.

[0098] refer to Figure 5 and in conjunction with references Figures 1 to 4 Step S1: Under the same sealed environment as the process, using the semiconductor device of any embodiment of the present invention, obtain the first vertical distance from the reference position of each laser transceiver 131 to the height calibration block, and the first difference between each first vertical distance.

[0099] It should be noted that the sealing environment during wafer carrier level testing is the same as the sealing environment during process processing, which means at least the sealing environment pressure during testing is the same as the sealing environment pressure during process processing.

[0100] It should also be noted that the sealing environment for detecting the level of the wafer carrier is the same as the sealing environment during the process, which may include one or more of the following: the temperature of the sealing environment for detecting the level of the wafer carrier is the same as the temperature of the sealing environment during the process; the type of gas in the sealing environment for detecting the level of the wafer carrier is the same as the type of gas in the sealing environment during the process; the gas flow rate in the sealing environment for detecting the level of the wafer carrier is the same as the gas flow rate in the sealing environment during the process.

[0101] The first difference is used as a reference value for the height relationship between the various laser transceiver components.

[0102] As an example, such as Figure 2 As shown, the reflector 140 has a through hole 1311 for the laser transceiver 131 to pass through. Accordingly, a first vertical distance can be obtained when the semiconductor device is equipped with the reflector 140.

[0103] As another example, the reflector may not have a through hole, and the reflector may be detachably connected to the base. Accordingly, the reflector is removed before obtaining the reference position of each of the laser transceivers to the first vertical distance from the height calibration block.

[0104] refer to Figure 5 and in conjunction with references Figures 1 to 4 Step S2: Disassemble the height calibration block 120 of the levelness detection device 10.

[0105] The height calibration block 120 of the disassembled levelness detection device 10 is used to provide a basis for obtaining the second vertical distance and the second difference.

[0106] refer to Figure 5 and in conjunction with references Figures 1 to 4 Step S3: After disassembling the height calibration block 120 of the levelness detection device 10, in the same sealed environment as the process, obtain the second vertical distance from the reference position of each laser transceiver component 131 to the wafer carrier or wafer, and the second difference between each second vertical distance.

[0107] The second difference is used as a measurement height difference between the various positions corresponding to the laser transceiver component 131 on the wafer carrier or wafer.

[0108] As another example, the reflector may not have a through hole, and the reflector may be detachably connected to the base. The reflector is removed before obtaining the first vertical distance from the reference position of each laser transceiver component to the height calibration block. Correspondingly, the reflector is installed in the receiving cavity before obtaining the second vertical distance from the reference position of each laser transceiver component to the wafer carrier or wafer.

[0109] refer to Figure 5 and in conjunction with references Figures 1 to 4 Step S4: Calculate the third difference between each first difference and the corresponding second difference.

[0110] The third difference is used as the actual height difference between the various positions corresponding to the laser transceiver component 131 on the wafer carrier or wafer.

[0111] refer to Figure 5 and in conjunction with references Figures 1 to 4 Step S5: In the same sealed environment as the process, adjust the flatness of the wafer carrier to the preset requirement according to the third difference.

[0112] In a sealed environment identical to the process, using the semiconductor device of any embodiment of the present invention, the first vertical distance from the reference position of each laser transceiver 131 to the height calibration block 120, and the first difference between each first vertical distance are obtained. After disassembling the height calibration block 120 of the levelness detection device 10, in a sealed environment identical to the process, the second vertical distance from the reference position of each laser transceiver 131 to the wafer carrier 212 or the wafer, and the second difference between each second vertical distance are obtained. The third difference between each first difference and the corresponding second difference is calculated. In a sealed environment identical to the process, the flatness of the wafer carrier 212 is adjusted to a preset requirement based on the third difference, so that the wafer carrier 212 has better levelness during the process, which is beneficial to improving the uniformity and stability of the flow field in the process cavity 200 during the process, and thus beneficial to improving the quality and uniformity of the formed film layer. Furthermore, since the transparent window 110 can also observe the horizontal offset of the wafer carrier 212, the position of the ejector pin 213 of the wafer carrier device can be observed in real time during the adjustment of the level of the wafer carrier 212, reducing the probability of damage to the ejector pin 213 due to incorrect adjustment of the level of the wafer carrier 212. Moreover, the reflector 140 located in the receiving cavity 105 can also reflect the heat conducted from the wafer carrier 212 area to the receiving cavity 105 area, making the temperature of the wafer carrier 212 area closer to the actual process temperature, while reducing the temperature of the level detection device 10. This helps to reduce the probability of the laser transceiver component 131 exceeding the normal tolerance temperature and also helps to reduce the probability of operators being burned by high temperature.

[0113] In some embodiments, the number of laser transceiver components 131 is multiple, and at least three laser transceiver components 131 are not located on the same straight line; the wafer carrier device includes three leveling adjustment components. Under the same sealed environment as the process, the step of adjusting the flatness of the wafer carrier to a preset requirement based on a third difference includes: if the third difference is equal to or less than a preset value, the flatness of the wafer carrier meets the preset requirement; if the third difference is greater than the preset value, the levelness of the wafer carrier is adjusted by the leveling adjustment components so that the difference between the first difference and the second difference between the adjusted second vertical distances meets the preset requirement.

[0114] It should be noted that the difference between the first difference and the second difference between the adjusted second vertical distances can be 0 or other reasonable ranges.

[0115] As an example, the levelness detection device 10 has three laser transceiver components 131, and each laser transceiver component 131 is evenly arranged around the center of the top plate 101. The wafer carrier device includes three levelness adjustment components, each corresponding to a laser transceiver component and located directly below the corresponding laser transceiver component. Under the same sealed environment as the process, the step of adjusting the flatness of the wafer carrier to a preset requirement according to the third difference includes: if the third difference is less than or equal to the preset value, the flatness of the wafer carrier meets the preset requirement; if the third difference is greater than the preset value, the corresponding levelness adjustment component is adjusted according to the value of the third difference, so that the corresponding position of the wafer carrier device rises or falls by the value of the third difference, so that the difference between the first difference and the second difference between the adjusted second vertical distances meets the preset requirement, for example: the difference between the first difference and the second difference between the adjusted second vertical distances is 0.

[0116] It should be noted that for a detailed description of each component in the levelness detection device, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.

[0117] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A levelness detection device, characterized in that, For detecting the levelness of a wafer carrier disk beneath it in a sealed environment identical to the process flow, the levelness detection device includes: The base includes a top plate and a support seat located on either side of the top plate. The support seat and the top plate form a receiving cavity. A transparent window is provided on the side of the top plate facing away from the support seat, or a transparent window is provided in the top plate. The transparent window is used to allow laser pulses to pass through and to observe the degree of horizontal deviation of the wafer carrier. The end of the support seat facing away from the top plate is used for a sealed connection with the top of the process cavity so that the receiving cavity is in communication with the process cavity. A height calibration block is located in the receiving cavity directly below the transparent window and is detachably connected to the base; A laser ranging assembly is fixedly connected to the base via a laser ranging assembly holder. The laser ranging assembly includes multiple laser transceivers fixedly disposed on the side of the transparent window facing away from the receiving cavity. The laser transceivers are located directly above the transparent window and the height calibration block, and are used to obtain a first vertical distance from their reference position to the height calibration block and a first difference between each of the first vertical distances. After the height calibration block is removed, they are used to obtain a second vertical distance from their reference position to the wafer carrier or wafer and a second difference between each of the second vertical distances, so as to obtain a third difference between each of the first differences and the corresponding second differences by calculation. A reflector is located within the receiving cavity, and at least the surface of the reflector facing the wafer carrier is a reflective surface.

2. The levelness detection device as described in claim 1, characterized in that, When a transparent window is provided on the side of the top plate facing away from the support base, a through hole is provided in the top plate, and a transparent plate covering the through hole is provided on the surface of the top plate facing away from the receiving cavity. The transparent plate is fixedly connected to the top plate by a connector and a sealing member.

3. The levelness detection device as described in claim 1, characterized in that, The top plate has a first side and a second side arranged opposite to each other; the support base is disposed on the second side. The levelness detection device further includes a heat insulation plate, which is fixedly installed on the first surface and is positioned away from the transparent viewing window.

4. The levelness detection device as described in claim 3, characterized in that, The transparent window includes: a first transparent window for allowing laser pulses to pass through, and a second transparent window for observing the degree of horizontal offset of the wafer carrier. The laser transceiver is located above the first transparent window; On the first transparent window of the portion covered by the heat insulation panel.

5. The levelness detection device as described in claim 1, characterized in that, The levelness detection device further includes an air blowing component, which is located near the laser transceiver component.

6. The levelness detection device as described in claim 1, characterized in that, The top plate has a through air inlet; The levelness detection device further includes an air inlet pipe, located on the side of the top plate facing away from the support base and intersecting with the air inlet to connect to the receiving cavity.

7. The levelness detection device as described in claim 1, characterized in that, The number of laser transceivers is three, and each laser transceiver is evenly arranged around the center of the top plate.

8. A semiconductor device, characterized in that, include: The levelness detection device as described in any one of claims 1 to 7; Process cavity; The wafer carrier device is located within the process cavity below the levelness detection device.

9. The semiconductor device as claimed in claim 8, characterized in that, The levelness detection device has three laser transceiver components, and each laser transceiver component is evenly arranged around the center of the top plate. The wafer carrier device includes three leveling adjustment components, each corresponding to a laser transceiver component and located directly below the corresponding laser transceiver component.

10. A method for adjusting levelness, characterized in that, include: In a sealed environment identical to the process, using the semiconductor device as described in claim 8 or 9, the first vertical distance from the reference position of each of the laser transceivers to the height calibration block, and the first difference between each of the first vertical distances are obtained. Disassemble the height calibration block of the levelness detection device; After disassembling the height calibration block of the levelness detection device, in a sealed environment identical to the process, the second vertical distance from the reference position of each laser transceiver component to the wafer carrier or wafer, and the second difference between each second vertical distance are obtained. Calculate the third difference between each of the first differences and the corresponding second differences; Under the same sealed environment as the process, the flatness of the wafer carrier is adjusted to a preset requirement based on the third difference.

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