Detection device
By introducing different types of detection electrodes into the detection device and adjusting their contact area with the sensor layer, the problem of balancing sensitivity and accuracy in both high and low pressure detection was solved, achieving a dual improvement in sensitivity and accuracy.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JAPAN DISPLAY INC
- Filing Date
- 2025-11-27
- Publication Date
- 2026-06-05
AI Technical Summary
Existing detection devices struggle to simultaneously achieve both sensitivity and accuracy under high and low pressures, failing to maintain a wide pressure sensitivity range under high pressure while simultaneously achieving high-precision detection under low pressure.
By designing different types of detection electrodes in the detection device, including open detection electrodes and convex detection electrodes, the pressure sensitivity range can be adjusted by using different contact areas and contact methods, thereby achieving the adjustment of sensitivity and accuracy for different pressure ranges.
It achieves a wide pressure sensitivity range under high pressure while being able to detect low pressure with high precision, thus improving the sensitivity and accuracy of the detection device.
Smart Images
Figure CN122149697A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a detection device. Background Technology
[0002] The detection device is used to detect loads (pressures) acting perpendicularly on a detection surface. The detection device includes a protective layer, a sensor layer, and an array substrate stacked sequentially from the detection surface. It should be noted that one side of the protective layer constitutes the detection surface. Furthermore, the array substrate of Patent Document 1 described below has a detection electrode and a common electrode disposed on the surface opposite to the sensor layer. The sensor layer has contact surfaces that are respectively opposite to and separate from the detection electrode and the common electrode. When pressure is applied to the detection surface, the contact surfaces move to and contact the detection electrode and the common electrode, respectively. As a result, current flows from the common electrode to the detection electrode via the sensor layer. Additionally, if the pressure applied to the detection surface is large, the contact area of the contact surfaces contacting the common electrode and the detection electrode increases. Consequently, the current flowing from the common electrode to the detection electrode increases.
[0003] Existing technical documents
[0004] Patent documents
[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-109115 Summary of the Invention
[0006] However, the pressure input to the detection device varies. Therefore, it is desirable to achieve both a large pressure sensitivity range for detecting large pressures and a small pressure sensitivity range for detecting small pressures with high accuracy.
[0007] The purpose of this invention is to provide a detection device with different pressure-sensitive ranges for the detection electrodes.
[0008] The detection apparatus of the first aspect of this disclosure has an array substrate and a sensor layer stacked sequentially. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes disposed on the first surface and separated from the sensor layer. The plurality of detection electrodes includes a plurality of open detection electrodes having openings that expose the first surface. The plurality of open detection electrodes includes two or more types of open detection electrodes with different numbers of openings.
[0009] The detection apparatus of the second aspect of this disclosure has an array substrate and a sensor layer stacked sequentially. The array substrate has a first surface facing the sensor layer and a plurality of detection electrodes disposed on the first surface and separated from the sensor layer. The plurality of detection electrodes includes a plurality of protruding detection electrodes having protrusions extending toward the sensor layer. The plurality of protruding detection electrodes includes two or more types of protruding detection electrodes with different numbers of protrusions. Attached Figure Description
[0010] Figure 1 This is a schematic diagram of the detection device of Embodiment 1 viewed from the front.
[0011] Figure 2 This is a schematic cross-sectional view of the detection device of Embodiment 1, specifically showing a cross-section of the device. Figure 4 A schematic cross-sectional view showing a section cut along line II-II.
[0012] Figure 3 This is an enlarged view of a portion (4 separate detection areas) of the first surface of the array substrate of Embodiment 1 as seen from the sensor layer.
[0013] Figure 4 This is an enlarged view of a portion (a single detection area) of the first surface of the array substrate of Embodiment 1 as seen from the sensor layer.
[0014] Figure 5 This is a circuit diagram showing the circuit configuration of the detection device according to Embodiment 1.
[0015] Figure 6 This is a schematic cross-sectional view showing the state in which pressure is input to a separate detection area in the detection device of Embodiment 1, where a flat plate detection electrode is arranged.
[0016] Figure 7 This is a schematic cross-sectional view showing the state in which pressure is input to a separate detection area in the detection device of Embodiment 1, where an opening detection electrode (third opening detection electrode) is disposed.
[0017] Figure 8 It is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection device of Embodiment 1.
[0018] Figure 9 This is a cross-sectional view of the detection device of Embodiment 2 cut along the stacking direction; more specifically, it schematically shows... Figure 10 A schematic diagram of a cross-section cut along the IX-IX line.
[0019] Figure 10 This is an enlarged view of a portion (four separate detection areas) of the first surface of the array substrate in Embodiment 2, viewed from the sensor layer.
[0020] Figure 11 This is a cross-sectional view of the detection area in the detection device of Embodiment 2, where a pressure is input to a separate detection area equipped with a protrusion detection electrode.
[0021] Figure 12It is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection device of Embodiment 2.
[0022] The reference numerals in the attached figures are explained as follows:
[0023] 1 detection surface
[0024] 2. Back
[0025] 3 detection areas
[0026] 4 Surrounding Areas
[0027] 5 separate detection areas
[0028] 10-array substrate
[0029] 11 substrates
[0030] 12 array layers
[0031] Page 1 of 16
[0032] 17 basal convexity
[0033] 20 detection electrodes
[0034] 21 Opening detection electrode
[0035] 22 First opening detection electrode
[0036] 23 Second opening detection electrode
[0037] 24 Third opening detection electrode
[0038] 25 Flat plate detection electrode
[0039] 27 Opening
[0040] 30 common electrodes
[0041] 70 sensor layers
[0042] 80 protective layers
[0043] 100, 100A testing devices
[0044] 121 convex detection electrode
[0045] 122 First convex detection electrode
[0046] 123 Second convex detection electrode
[0047] 124 Third convex detection electrode
[0048] 127 convex part
[0049] 128 bottom Detailed Implementation
[0050] The embodiments of the detection apparatus used to implement this disclosure are described in detail with reference to the accompanying drawings. The invention disclosed herein is not limited to the embodiments described below. Furthermore, the constituent elements described below include those readily conceived or substantially identical to those skilled in the art. Moreover, the constituent elements described below can be appropriately combined. It should be noted that this disclosure is merely an example, and appropriate modifications that can be readily conceived by those skilled in the art in maintaining the spirit of the invention are naturally included within the scope of this invention. To make the description clearer, the width, thickness, shape, etc., of various parts of the drawings are sometimes schematically shown compared to the actual form, but this is merely an example and not a limitation on the interpretation of the invention. Additionally, in this specification and the drawings, the same reference numerals are sometimes used for constituent elements that are previously described with respect to existing drawings, and detailed descriptions are appropriately omitted.
[0051] Furthermore, in this specification and claims, when referring to the arrangement of other structures on top of a certain structure, the term "on top" includes, unless otherwise specified, both the case of arranging other structures directly above a certain structure in connection with it and the case of arranging other structures above a certain structure with another structure in between.
[0052] (Implementation Method 1)
[0053] Figure 1 This is a schematic diagram showing the detection device of Embodiment 1 from the front. The detection device 100 is a device for detecting the pressure acting on the detection surface 1. Figure 1 As shown, the detection device 100 is formed in the shape of a flat plate. The detection device 100 has a planar surface (detection surface 1) and a planar back surface 2 (in the detection area). Figure 1 Not illustrated. See also Figure 2 The detection device 100 appears rectangular when viewed from the normal direction of the detection surface 1. Figure 1 The detection device 100 shown has a planar detection surface 1, thus enabling it to detect the pressure distribution within the detection surface 1.
[0054] The detection surface 1 is divided into a detection area 3, which can detect pressure, and a peripheral area 4, which cannot detect pressure. The detection area 3 is located in the center of the detection surface 1. The peripheral area 4 is formed in a frame shape, surrounding the outer side of the detection area 3.
[0055] The detection area 3 is rectangular when viewed from the normal direction of the detection surface 1. Therefore, the outer frame M of the detection area 3 has a pair of short sides 3a and a pair of long sides 3b. The direction parallel to the detection surface 1 and parallel to the short sides 3a will be referred to as the first direction X. The direction parallel to the detection surface 1 and parallel to the long sides 3b will be referred to as the second direction Y. Thus, the second direction Y is orthogonal (intersecting) with the first direction X. Furthermore, the direction parallel to the detection surface 1 will sometimes be referred to as the planar direction.
[0056] The detection area 3 is divided into multiple independent detection areas 5. In other words, the detection area 3 is composed of multiple independent detection areas 5. Furthermore, pressure values are detected in each independent detection area 5. Viewed from the normal direction of the detection surface 1, each independent detection area 5 is square. The multiple independent detection areas 5 are arranged along the first direction X and the second direction Y.
[0057] Figure 2 This is a schematic cross-sectional view of the detection device according to Embodiment 1; more specifically, it schematically shows a cross-section of the detection device according to Embodiment 1. Figure 3 A sectional view of the section cut along line II-II. (e.g.) Figure 2 As shown, the detection device 100 includes an array substrate 10, a sensor layer 70, and a protective layer 80 that are stacked sequentially. Hereinafter, the direction in which the array substrate 10, sensor layer 70, and protective layer 80 overlap is referred to as the stacking direction. It should be noted that the normal direction of the aforementioned detection surface 1 is the same as the stacking direction. Furthermore, the direction in the stacking direction from which the sensor layer 70 is arranged as viewed from the array substrate 10 is referred to as the first stacking direction Z1, and the opposite direction is referred to as the second stacking direction Z2. Viewing from the first stacking direction Z1 is referred to as top view.
[0058] The array substrate 10 includes a substrate 11 and an array layer 12 formed on the substrate 11 in a first stacking direction Z1. The substrate 11 has a plate-like structure that supports the array layer 12 and is insulating. Examples of substrates 11 include flexible substrates made of polyimide, but this disclosure is not limited thereto. In addition, the surface of the substrate 11 in the second stacking direction Z2 constitutes the back surface 2 of the detection device 100.
[0059] The array layer 12 has a first insulating layer 13, a second insulating layer 14, and a third insulating layer 15 sequentially stacked on the surface of the substrate 11 in the first stacking direction Z1. It should be noted that a gate insulating film 42 of the transistor 40, which will be described later, is provided between the first insulating layer 13 and the second insulating layer 14.
[0060] The first insulating layer 13, the second insulating layer 14, and the third insulating layer 15 are formed of insulating material. The insulating material can be either inorganic or organic. Furthermore, the third insulating layer 15 is a layer (planarization film) used to planarize the first surface 16 of the array layer 12 in the first stacking direction Z1. It should be noted that the array layer 12 of this embodiment has three insulating layers, but this disclosure does not impose any particular limitation on the number of insulating layers.
[0061] A detection electrode 20, a common electrode 30, a first contact hole 6, and a second contact hole 7 are formed on the first surface 16 of the array layer 12. The detection electrode 20 and the common electrode 30 are metal films (metal layers) formed on the first surface 16, for example, by a metal material such as ITO (Indium Tin Oxide).
[0062] Figure 3 This is an enlarged view of a portion (4 separate detection areas) of the first surface of the array substrate of Embodiment 1 as seen from the sensor layer. Figure 4 This is an enlarged view of a portion (a single detection area) of the first surface of the array substrate in Embodiment 1, viewed from the sensor layer. It should be noted that... Figure 3 and Figure 4 In order to make it easier to observe the detection electrode 20 and the common electrode 30, the detection electrode 20 and the common electrode 30 are marked with dot patterns.
[0063] like Figure 3 and Figure 4 As shown, a plurality of detection electrodes 20 are formed on the first surface 16. One detection electrode 20 is disposed for each individual detection region 5. The detection electrode 20 is disposed in the center of the individual detection region 5. When viewed from above, the detection electrode 20 appears to be square in shape.
[0064] A portion of the plurality of detection electrodes 20 has an opening 27. The opening 27 extends through the detection electrode 20 along the stacking direction. As a result, the first surface 16 is exposed from the opening 27. The opening 27 appears square when viewed from above. Hereinafter, the detection electrode 20 having the opening 27 will be referred to as the open detection electrode 21.
[0065] Multiple opening detection electrodes 21 include opening detection electrodes with different numbers of openings 27. Specifically, the types of opening detection electrodes 21 include a first opening detection electrode 22 with 9 openings 27, a second opening detection electrode 23 with 13 openings 27, and a third opening detection electrode 24 with 25 openings 27.
[0066] In addition, the plurality of detection electrodes 20 includes detection electrodes 20 without openings 27. Hereinafter, the detection electrodes 20 without openings 27 will be referred to as planar detection electrodes 25. In this embodiment, four adjacent individual detection regions 5 are grouped together, and the four detection electrodes 20 disposed in these four individual detection regions 5 are a first opening detection electrode 22, a second opening detection electrode 23, a third opening detection electrode 24, and a planar detection electrode 25.
[0067] like Figure 3 and Figure 4 As shown, a plurality of common electrodes 30 are formed on the first surface 16. When viewed from above, the common electrodes 30 are formed in a four-sided border shape. One common electrode 30 is disposed for each individual detection region 5. Furthermore, a detection electrode 20 is disposed inside the common electrode 30, and the common electrode 30 surrounds the detection electrode 20. Additionally, the common electrode 30 and the detection electrode 20 are separated in the planar direction on the first surface 16 and are not connected.
[0068] The first contact hole 6 and the second contact hole 7 are holes extending from the first surface 16 of the array substrate 10 toward the second stacking direction Z2 (see...). Figure 2 ).like Figure 4 As shown, one first contact hole 6 and one second contact hole 7 are each formed for a single detection area 5. The first contact hole 6 is disposed in the portion of the first surface 16 covered by the detection electrode 20. The second contact hole 7 is disposed in the portion of the first surface 16 covered by the common electrode 30. Thus, as Figure 2 As shown, a portion of the detection electrode 20 is disposed within the first contact hole 6 and forms the first contact portion 29. Additionally, a portion of the common electrode 30 is disposed within the second contact hole 7 and forms the second contact portion 39.
[0069] Figure 5 This is a circuit diagram showing the circuit configuration of the detection device in Embodiment 1. Figure 5 As shown, transistors 40, gate lines 46, signal lines 47, reference potential wiring 48, and connection portions 50 are formed inside the array layer 12. Figure 1 ), Gate line drive circuit 51 (see Figure 1 ), Signal line selection circuit 52 (see Figure 1 ) and public cabling 53 (see Figure 1 In addition, multiple transistors 40, gate lines 46, signal lines 47 and reference potential wiring 48 are formed in the array layer 12 (array substrate 10).
[0070] Transistor 40 is a switching element. Multiple transistors 40 are configured, one for each independent detection region 5. For example... Figure 2As shown, transistor 40 includes a semiconductor layer 41, a gate insulating film 42, a gate electrode 43, a drain electrode 44, and a source electrode 45. Furthermore, the end of the source electrode 45 in the first stacking direction Z1 is connected to a connection wiring 49. The connection wiring 49 extends along the planar direction (see...). Figure 4 The source electrode 45 is connected to the first contact portion 29. Thus, the source electrode 45 is connected to the detection electrode 20 via the connecting wire 49 and the first contact portion 29.
[0071] like Figure 5 As shown, gate line 46 extends along the first direction X. Multiple gate lines 46 are arranged in the second direction Y. Figure 3 As shown, the gate line 46 has a branch 46a extending along the second direction Y. The branch 46a is disposed in each independent detection region 5. The gate line 46 connects via the branch 46a to the gate electrodes 43 of the plurality of transistors 40 arranged in the first direction X (see...). Figure 2 )connect.
[0072] like Figure 5 As shown, signal line 47 extends along the second direction Y. Furthermore, multiple signal lines 47 are arranged in the first direction X. And, the signal lines 47 connect with the drain electrodes 44 of the multiple transistors 40 arranged in the second direction Y (see...). Figure 2 )connect.
[0073] like Figure 5 As shown, the reference potential wiring 48 extends along the second direction Y. Multiple reference potential wirings 48 are arranged along the first direction X. Furthermore, as... Figure 2 As shown, the reference potential wiring 48 is connected to the second contact portion 39 of the common electrode 30.
[0074] like Figure 1 As shown, the connection portion 50, gate line driving circuit 51, signal line selection circuit 52, and common wiring 53 are disposed in the peripheral region 4 of the array layer 12. The connection portion 50 is used to connect to a driver IC (Integrated Circuit) disposed outside the detection device 100. It should be noted that the driver IC can also be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid substrate connected to the connection portion 50. Alternatively, the driver IC can also be mounted as a COG (Chip On Glass) on the peripheral region 4 of the array substrate 10.
[0075] Gate line drive circuit 51 drives multiple gate lines 46 (see [link]) based on various control signals from the driver IC. Figure 5 The circuit consists of a gate line drive circuit 51 that sequentially or simultaneously selects multiple gate lines 46 and supplies gate drive signals to the selected gate lines 46.
[0076] Signal line selection circuit 52 selects multiple signal lines 47 sequentially or simultaneously (see...). Figure 5 The switching circuit 52 is, for example, a multiplexer. The signal line selection circuit 52 connects the selected signal line 47 to the driver IC based on a selection signal supplied from the driver IC. The detection area 3 includes a transistor 40, a gate line 46, a signal line 47, and a reference potential wiring 48, therefore, the detection device 100 can measure the change in the pressure distribution in the surface over time.
[0077] The common wiring 53 is connected to the driver IC via the connection portion 50, and a fixed amount of current is supplied from the driver IC. The common wiring 53 extends in a ring shape along the peripheral area. Furthermore, the common wiring 53 is connected to the reference potential wiring 48. Thus, a fixed amount of current is supplied to the common electrode 30.
[0078] like Figure 2 As shown, the sensor layer 70 is formed of a conductive resin material (hereinafter referred to as conductive resin material) and is in the shape of a flat plate. The sensor layer 70 is bonded to the surface 81 of the protective layer 80 in the second stacking direction Z2 and is integrated with the protective layer 80. In addition, the surface of the sensor layer 70 in the second stacking direction Z2 is the contact surface 71. The contact surface 71 is opposite to the first surface 16 of the array substrate 10. In addition, the contact surface 71 is separated from the detection electrode 20 and the common electrode 30. Thus, a space S is formed between the contact surface 71 and the first surface 16.
[0079] like Figure 2 As shown, the protective layer 80 is formed of a material such as rubber or resin that is capable of elastic deformation and has insulating properties. The surface of the protective layer 80 in the first stacking direction becomes the detection surface 1. In addition, the integrated sensor layer 70 and the protective layer 80 are bonded to the array substrate 10 by means of a frame-shaped frame portion (not shown) in the area overlapping with the surrounding region 4.
[0080] Figure 6 This is a schematic cross-sectional view showing the state in which pressure is input to a separate detection area 5, which is equipped with a flat plate detection electrode in the detection device of Embodiment 1. Figure 7 This is a schematic cross-sectional view showing the state in which pressure is applied to the individual detection area 5, which is equipped with an opening detection electrode (third opening detection electrode) in the detection device of Embodiment 1. Next, the situation where pressure is applied to the individual detection area 5 will be described.
[0081] like Figure 6 , Figure 7As shown, when pressure F1 is applied to the detection surface 1, the protective layer 80 and sensor layer 70 of the individual detection area 5, to which pressure F1 is applied, deform in the second stacking direction Z2. Then, a portion of the contact surface 71 of the sensor layer 70 contacts the detection electrode 20. Consequently, current flows from the common electrode 30 into the detection electrode 20 via the sensor layer 70 (see...). Figure 6 Arrow A1 and Figure 7 Arrow A2).
[0082] Furthermore, if the pressure F1 increases, the deformation in the second stacking direction Z2 caused by the sensor layer 70 also increases. That is, the contact area between the sensor layer 70 and the detection electrode 20 increases, and the amount of current flowing from the common electrode 30 into the detection electrode 20 also increases. Then, the electrical signal (current value) input to the detection electrode 20 is output to the driver IC via signal line 47. The driver IC calculates the load input to the individual detection area 5 based on the magnitude of the current value.
[0083] It should be noted that, in this embodiment, as Figure 7 As shown, the opening detection electrode 21 (in) Figure 7 The third opening detection electrode 24 (shown in the diagram) has multiple openings 27. Therefore, even under the same pressure, the contact area between the opening detection electrode 21 and the sensor layer 70 is smaller than the contact area between the flat plate detection electrode 25 and the sensor layer 70. Consequently, the amount of current flowing into the opening detection electrode 21 ( Figure 7 Arrow A2) is less than the current flowing into the plate detection electrode 25 (see arrow A2). Figure 6 Arrow A1).
[0084] Figure 8 This is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection device of Embodiment 1. Next, the relationship between the contact area between the sensor layer 70 and the detection electrode 20 and the amount of current flowing into the detection electrode 20 will be explained. When the contact area between the sensor layer 70 and the detection electrode 20 does not exceed a predetermined amount (threshold), a direct proportional relationship exists, that is, if the contact area between the sensor layer 70 and the detection electrode 20 increases, the current flowing into the detection electrode 20 also increases. On the other hand, when the contact area between the sensor layer 70 and the detection electrode 20 exceeds the predetermined amount (threshold), the rate of increase of the current flowing into the detection electrode 20 decreases relative to the rate of increase of the contact area, and a direct proportional relationship does not exist. It should be noted that the range in which a direct proportional relationship exists is used when detecting pressure values.
[0085] To be more specific, such as Figure 8As shown, a direct proportional relationship exists within the range of pressure values input to the individual detection area 5 equipped with the flat plate detection electrode 25 from 0 (zero) to B1. On the other hand, if the pressure value exceeds B1, the direct proportional relationship does not exist. That is, in the individual detection area 5 equipped with the flat plate detection electrode 25, when the pressure value is B1, the contact area with the sensor layer 70 reaches a threshold. Therefore, the pressure-sensitive range (the magnitude of the pressure that can be detected) of the individual detection area 5 equipped with the flat plate detection electrode 25 becomes the range of pressure from 0 (zero) to B1.
[0086] On the other hand, the first opening detection electrode 22 has an opening 27, so even if the pressure value is B1, the contact area will not reach the threshold. Therefore, in the individual detection area 5 where the first opening detection electrode 22 is located, when the pressure value is B2, which is greater than B1, the contact area with the sensor layer 70 reaches the threshold. As described above, the pressure-sensitive range of the individual detection area 5 where the first opening detection electrode 22 is located is from pressure 0 (zero) to B2.
[0087] The second opening detection electrode 23 has more openings 27 than the first opening detection electrode 22. Therefore, even if the pressure value is B2, the contact area with the sensor layer 70 will not reach the threshold. Then, in the individual detection area 5 where the second opening detection electrode 23 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B3, which is greater than B2. As described above, the pressure-sensitive range of the individual detection area 5 where the second opening detection electrode 23 is located is the range from pressure 0 (zero) to B3.
[0088] Because the opening 27 of the third opening detection electrode 24 is more than that of the second opening detection electrode 23, the contact area with the sensor layer 70 will not reach the threshold even if the pressure value is B3. Therefore, in the individual detection area 5 where the third opening detection electrode 24 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is B4, which is greater than B3. As described above, the pressure-sensitive range of the individual detection area 5 where the third opening detection electrode 24 is located is from a pressure of 0 (zero) to B4.
[0089] In this way, in the detection device 100 of Embodiment 1, the pressure-sensitive range of each individual detection region 5, which is provided with the flat plate detection electrode 25, the first opening detection electrode 22, the second opening detection electrode 23, and the third opening detection electrode 24, is different. In addition, the pressure-sensitive range of the flat plate detection electrode 25, the first opening detection electrode 22, the second opening detection electrode 23, and the third opening detection electrode 24 increases sequentially.
[0090] Furthermore, in Embodiment 1, the opening detection electrode 21 has an opening 27, and its installation area when viewed from above is smaller than that of the flat plate detection electrode. Therefore, the maximum current flowing into each detection electrode 20 (see...) Figure 8 The vertical axes (E1, E2, E3 and E4) are different, and they decrease in the order of plate detection electrode 25, first opening detection electrode 22, second opening detection electrode 23 and third opening detection electrode 24.
[0091] The first embodiment has been described above. It should be noted that the opening 27 in the first embodiment is quadrilateral, but this disclosure does not impose any particular limitation on the shape of the opening. Furthermore, in the first embodiment, one of the four detection electrodes 20 is a flat plate detection electrode 25; in this disclosure, all four detection electrodes 20 may be open detection electrodes 21. Additionally, in this embodiment, there are three types of open detection electrodes 21 with different numbers of openings 27, but this disclosure may have two or more types. Next, the detection device 100A of the second embodiment will be described. It should be noted that in the second embodiment, the description will focus on the differences from the first embodiment.
[0092] (Implementation Method 2)
[0093] Figure 9 This is a cross-sectional view of the detection device of Embodiment 2 cut along the stacking direction; more specifically, it is a cross-sectional view of the device with... Figure 10 A schematic diagram showing a cross-section cut along the IX-IX line. Figure 10 This is an enlarged view of a portion (four separate detection areas) of the first surface of the array substrate in Embodiment 2, viewed from the sensor layer. Figure 9 As shown, the detection device 100A of Embodiment 2 is provided with a protrusion detection electrode 121 instead of the opening detection electrode 21, which is different from Embodiment 1.
[0094] like Figure 9 As shown, a base protrusion 17 protruding in the first stacking direction Z1 is formed on the first surface 16 of the array substrate 10. The base protrusion 17 is disposed in a region overlapping with the protrusion detection electrode 121. Therefore, the portion of the protrusion detection electrode 121 that is stacked on the base protrusion 17 becomes a protrusion 127 protruding into the sensor layer 70. It should be noted that the portion of the protrusion detection electrode 121 that is not stacked with the base protrusion 17 but is stacked with the first surface 16 is referred to as the bottom 128.
[0095] The base protrusion 17 becomes conical. Therefore, the protrusion 127 becomes conical. Additionally, as... Figure 10 As shown, the protrusion 127 appears as a circle when viewed from above.
[0096] like Figure 10As shown, the plurality of protrusion detection electrodes 121 include protrusion detection electrodes with different numbers of protrusions 127. Specifically, the types of protrusion detection electrodes 121 include a first protrusion detection electrode 122 having 4 protrusions 127, a second protrusion detection electrode 123 having 5 protrusions 127, and a third protrusion detection electrode 124 having 9 protrusions 127.
[0097] Next, we will explain the case where pressure is input to the individual detection area 5, which is equipped with the protrusion detection electrode 121. It should be noted that, as a representative example of the protrusion detection electrode 121, the second protrusion detection electrode 123 will be used for explanation.
[0098] Figure 11 This is a cross-sectional view of the state in which pressure is input to a separate detection area in the detection device of Embodiment 2, where a protruding detection electrode is arranged. For example... Figure 11 As shown, when pressure F2 is applied to the detection surface 1, the protective layer 80 and the sensor layer 70 deform in the second stacking direction Z2. Then, the contact surface 71 of the sensor layer 70 contacts the top of the protrusion 127 (the end in the first stacking direction Z1). Thus, current flows through the sensor layer 70 from the common electrode 30 (in...) Figure 11 (Not shown in the diagram) Flows into the second convex detection electrode 123 (see...) Figure 11 (A3).
[0099] If the pressure input to the detection surface 1 increases, the sensor layer 70 moves further in the second stacking direction Z2 and contacts the middle part of the convex portion 127 in the stacking direction. In addition, if the input pressure increases further, the sensor layer 70 contacts the entire convex portion 127 and the entire bottom portion 128, that is, contacts the entire second convex portion detection electrode 123.
[0100] As such, according to the convex detection electrode 121, when the sensor layer 70 moves in the second stacking direction Z2, it first contacts the convex part 127. Therefore, the sensor layer 70 is less likely to contact the bottom part 128. For this reason, when the same amount of pressure is input, the contact area between the convex detection electrode 121 and the sensor layer 70 is smaller than that of the flat plate detection electrode 25.
[0101] As described above, in this embodiment 2, when the same pressure is applied, the contact area between the detection electrode 20 and the sensor layer 70 decreases in the order of the flat plate detection electrode 25, the third protruding detection electrode 124, the second protruding detection electrode 123, and the first protruding detection electrode 122. Next, the pressure-sensitive range of each detection electrode 20 will be explained.
[0102] Figure 12 This is a graph showing the relationship between the pressure input to the detection surface and the amount of current flowing into the detection electrode in the detection device of Embodiment 2. For example... Figure 12 As shown, in the flat plate detection electrode 25 of Embodiment 2, the contact area with the sensor layer 70 reaches a threshold when the pressure value is C1. Therefore, the pressure-sensitive range (the magnitude of the pressure that can be detected) of the individual detection area 5 on which the flat plate detection electrode 25 is disposed becomes the range where the pressure is 0 (zero) C1.
[0103] The third protrusion detection electrode 124 has a protrusion 127, so even if the pressure value is C1, the contact area with the sensor layer 70 will not reach the threshold. Therefore, in the individual detection area 5 where the third protrusion detection electrode 124 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is greater than C1 (C2). As described above, the pressure-sensitive range of the individual detection area 5 where the third protrusion detection electrode 124 is located is the range of pressure 0 (zero) C2.
[0104] Since the second protrusion detection electrode 123 has fewer protrusions 127 than the third protrusion detection electrode 124, the contact area will not reach the threshold even if the pressure value is C2. Therefore, in the individual detection area 5 where the second protrusion detection electrode 123 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is C3, which is greater than C2. As described above, the pressure-sensitive range of the individual detection area 5 where the second protrusion detection electrode 123 is located is the range from pressure 0 (zero) to C3.
[0105] Since the first protrusion detection electrode 122 has fewer protrusions 127 than the second protrusion detection electrode 123, the contact area will not reach the threshold even if the pressure value is C3. Therefore, in the individual detection area 5 where the first protrusion detection electrode 122 is located, the contact area with the sensor layer 70 reaches the threshold when the pressure value is C4, which is greater than C3. As described above, the pressure-sensitive range of the individual detection area 5 where the first protrusion detection electrode 122 is located becomes the range where the pressure is 0 (zero) C4.
[0106] As described above, in the detection device 100A of Embodiment 2, the pressure-sensitive range of each individual detection region 5, which is provided with the flat plate detection electrode 25, the first convex detection electrode 122, the second convex detection electrode 123, and the third convex detection electrode 124, is different. Furthermore, the pressure-sensitive range of the flat plate detection electrode 25, the third convex detection electrode 124, the second convex detection electrode 123, and the first convex detection electrode 122 increases sequentially.
[0107] Furthermore, the installation area of the protrusion detection electrode 121 in Embodiment 2 when viewed from above is the same as that of the flat plate detection electrode 25 (see [link]). Figure 10 Therefore, the maximum current flowing into each detection electrode 20 (see...) Figure 12 The vertical axis E is the same in the flat plate detection electrode 25 and the convex detection electrode 121.
[0108] The above describes Embodiment 2. It should be noted that the protrusion 127 in Embodiment 2 is a frustum (cone), but in this disclosure, it can also be a column (including a cylindrical column and a square column), and the shape of the protrusion 127 is not limited. Furthermore, the protrusion 127 in Embodiment 2 appears circular when viewed from above, but this disclosure does not have any particular limitation on the shape of the protrusion when viewed from above. In Embodiment 2, one of the four detection electrodes 20 is a flat plate detection electrode 25, but in this disclosure, all four detection electrodes 20 can be protruding detection electrodes 121. Additionally, the opening 27 can also have a long side in the planar direction, becoming a groove. Furthermore, the protrusion 127 can also have a long side in the planar direction, becoming convex. In this embodiment, there are three types of protruding detection electrodes 121 with different numbers of protrusions 127, but this disclosure can have two or more.
[0109] Furthermore, regarding the sensor layer 70, in the embodiment, a sensor layer formed of a conductive resin material is cited as an example. However, this disclosure may also include a sensor layer having a deformable and insulating main body portion such as silicone rubber, and conductive particles dispersed within the main body portion. When such a sensor layer is not subjected to applied pressure, its resistance is high. On the other hand, when the sensor layer is subjected to applied pressure and the main body portion deforms, the conductive particles come into contact with or approach the sensor layer, and the resistance decreases. However, in this disclosure, the material of the sensor layer is not limited to materials that can be printed on the first surface.
Claims
1. A detection device, characterized in that, It has an array substrate and a sensor layer stacked sequentially. The array substrate has: The first surface facing the sensor layer; and Multiple detection electrodes disposed on the first surface and separated from the sensor layer The plurality of detection electrodes includes a plurality of open detection electrodes having openings that expose the first surface. The plurality of opening detection electrodes comprises two or more types of opening detection electrodes with different numbers of openings.
2. The detection device according to claim 1, characterized in that, The plurality of detection electrodes include a flat plate detection electrode that does not have the opening formed thereon.
3. A detection device, characterized in that, It has an array substrate and a sensor layer stacked sequentially. The array substrate has: The first surface facing the sensor layer; and Multiple detection electrodes disposed on the first surface and separated from the sensor layer The plurality of detection electrodes includes a plurality of protruding detection electrodes having protrusions projecting toward the sensor layer. The plurality of said protrusion detection electrodes include two or more types of protrusion detection electrodes with different numbers of said protrusions.
4. The detection device according to claim 3, characterized in that, The plurality of detection electrodes include a flat plate detection electrode that does not have the protrusion formed thereon.