一种单晶硅片双面研磨的运动轨迹生成方法
By establishing a kinematic model of the double-sided polishing machine and optimizing its operating parameters, the motion trajectory parameter equation of the silicon wafer was generated, solving the problem of surface non-uniformity of the silicon wafer and realizing high-quality double-sided polishing of single-crystal silicon wafers.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MCL ELECTRONICS MATERIALS
- Filing Date
- 2026-05-06
- Publication Date
- 2026-07-17
AI Technical Summary
In existing double-sided polishing machines, improper setting of the rotation speed parameters of each rotating component leads to repetitive and uneven motion trajectories at various points on the silicon wafer, affecting processing quality and yield.
By establishing a kinematic model of a double-sided grinding machine, the motion trajectory parameter equations of any point on the silicon wafer are generated and discretized to generate a set of motion trajectory points. The coefficient of variation is calculated by combining the density matrix to evaluate the uniformity of the motion trajectory and optimize the operating parameters to achieve uniform grinding.
It achieves uniform grinding of silicon wafer surfaces, reduces total thickness variation and surface roughness, improves yield and consistency, and is suitable for silicon wafers and grinding machines of different specifications.
Smart Images
Figure CN122154243B_ABST