A simulation method and device for metal surface deposition morphology and a readable storage medium

CN122154629APending Publication Date: 2026-06-05SEMITRONIX

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMITRONIX
Filing Date
2026-05-09
Publication Date
2026-06-05

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Abstract

The application relates to a metal surface deposition morphology simulation method, device and readable storage medium, which comprises the following steps: obtaining an electrochemical deposition simulation model, adding a correction factor to an array height calculation formula in the electrochemical deposition simulation model, obtaining a correction factor coefficient through parameter iteration calibration, obtaining a correction array height calculation formula, obtaining a correction electrochemical deposition simulation model, obtaining layout extraction information after grid division of a chip to be simulated, and determining a target grid area of the simulation chip; based on the correction electrochemical deposition simulation model, electrochemical deposition simulation is carried out by using the layout extraction information of the target grid area, and an electrochemical deposition simulation result of the target grid area is generated. The metal surface deposition morphology simulation method effectively improves the simulation speed based on the electrochemical deposition morphology generation method of pure numerical calculation, and provides model correction for special areas with unexpected simulation results, so that the model prediction effect is ensured.
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