Ion beam processing apparatus

Abstract

The application provides an ion beam processing device, which effectively reduces the diffusion degree of an ion beam, reduces the irradiation on a non-processing area and reduces the metal particle pollution by improving the structure of the ion beam processing device. The ion beam processing device comprises a shell part, the shell part surrounds a gas-tight cavity, the shell part is provided with an air exhaust port, the air exhaust port is connected with a negative pressure device, the cavity contains a loading table and an emitting member arranged opposite to the loading table, the emitting member is provided with an ion beam emitting port and a plurality of first nozzles, the first nozzles are connected with a barrier gas source and are arranged around the emitting port. In this way, the ion beam can be blocked and trimmed in the diffusion direction of the ion beam, so that the diffusion range of the ion beam is matched with the workpiece to be processed, the irradiation of the ion beam on the non-processing area is reduced, and the metal particle pollution is reduced.

Description

Technical Field

[0001] This invention relates to the field of ion beam processing equipment, and more specifically, to an ion beam processing device. Background Technology

[0002] Ion beam processing technology, as a high-precision nanoscale processing method, has received widespread attention and application in recent years. Ion beam processing technology, especially ion beam etching, works by using high-speed ions to bombard the surface of the workpiece. Through physical collisions, atoms or molecules on the workpiece surface are ejected, thereby achieving precise material removal and etching of the desired structure.

[0003] However, metal contamination can occur in current production processes. This is because ion beams typically diffuse at an angle during processing, which can cause some ion beams to irradiate areas that are not being processed, resulting in unnecessary damage to other components within the chamber. In particular, the chamber often contains other metal components, which may generate metal particles under the bombardment of the ion beam. These particles contaminate the processing environment of the workpiece, severely impacting processing quality and product performance. Summary of the Invention

[0004] The purpose of this invention is to provide an ion beam processing device that, by improving the structure of the ion beam processing device, effectively reduces the diffusion of the ion beam, reduces irradiation of non-processing areas, and reduces metal particle contamination.

[0005] To achieve the above objectives, the present invention provides an ion beam processing device, including a shell portion forming an airtight cavity. The shell portion has an air extraction port connected to a negative pressure device. The cavity contains a stage and an emitter arranged opposite to the stage. The emitter is provided with an ion beam emission port and a plurality of first nozzles. The first nozzles are connected to a blocking gas source, and the plurality of first nozzles are arranged around the emission port.

[0006] In the technical solution of this application, a first nozzle is provided on the emitting component. The first nozzle is connected to a barrier gas source and is arranged around the ion beam emission port. During ion beam emission, the first nozzle can spray barrier gas outward at a set angle. This can block and trim the ion beam in the propagation direction, thereby reducing the diffusion range of the ion beam to match the workpiece to be processed. This reduces the irradiation of non-processed areas by the ion beam and reduces metal particle contamination.

[0007] Optionally, the emitter has an emitting surface, which is provided with the first nozzle. At least one or more openings are formed inside the first nozzle, and these openings together constitute the emitting port. In this way, the first nozzle surrounds the outside of all the openings used to eject the ion beam, thereby ensuring that the ion beam covers the processing area of ​​the workpiece while reducing contact between the ion beam and non-processing areas.

[0008] Optionally, a direction perpendicular to the platform is defined as a first direction; the platform is arranged opposite to the air extraction port in the first direction, and the launcher is located on the side of the platform opposite to the air extraction port, and is projected along the first direction, with the projection range of the platform covering the projection range of the air extraction port.

[0009] In this way, in the first direction, the exhaust port is located at the lower part of the stage, and the projection range of the stage in the first direction covers the range of the exhaust port. An emitter is set on the upper part of the stage, which maintains the stability of the ion beam processing environment. At the same time, the stage shields the exhaust port, which can also ensure the jet stability of the first nozzle.

[0010] Optionally, in the first direction, the surface of the platform located on the side opposite to the air extraction port is a first platform, the first platform including a first region and a second region, the second region being distributed around the first region and located outside the first region;

[0011] The first area is used to place the workpiece to be processed, and the second area is provided with a plurality of second nozzles, which are connected to the barrier air source.

[0012] In this way, the second nozzle works in conjunction with the exhaust port, allowing air to flow downwards from the first stage under the action of the exhaust port. During the flow, the air passes through the side wall of the stage, forming an air curtain. This air curtain covers the side wall of the stage, thus protecting the area of ​​the stage not covered by the workpiece, cutting off the path of the local ion beam, and preventing the ion beam from bombarding the exposed area of ​​the stage, thereby reducing the generation of metal contaminants.

[0013] Optionally, the second nozzle ejects barrier gas outward along the jet direction of the nozzle; the jet direction of the nozzle is deflected at a certain angle relative to the first direction, moving away from the first region. This avoids the barrier gas ejected from the second nozzle interfering with the ion beam processing of the workpiece, ensuring the processing effect of the workpiece.

[0014] Optionally, the ion beam processing equipment includes a driving component connected to the first region to drive the first region to rotate relative to the second region. The rotation of the first region can drive the workpiece to rotate, ensuring the ion beam processing effect on the workpiece.

[0015] Optionally, the portion of the shell with the air extraction port is defined as the first half-shell, and the shell further includes a second half-shell covering the first half-shell;

[0016] The portion of the second half-shell that connects with the first half-shell has a plurality of third nozzles, which are distributed around the air extraction port and are connected to the blocking air source connecting pipe.

[0017] Therefore, the third nozzle, in conjunction with the exhaust port, can form an air curtain, which can cover the first half-shell, thereby preventing the first half-shell from being bombarded by the ion beam, further reducing the contact between the ion beam and the non-processing area, and further reducing metal contamination.

[0018] Optionally, a gap is formed between the stage and the first half-shell in the first direction; the direction perpendicular to the first direction is defined as the second direction, and the third nozzle is opposite to the gap in the second direction. Thus, the gas ejected from the third nozzle can smoothly pass through the gap and exit the exhaust port, which not only protects the first half-shell but also increases the discharge rate of metal contaminants within the cavity.

[0019] Optionally, the second half-shell is hemispherical, and a motion axis is provided on the inner wall of the second half-shell, the motion axis extending in an arc; the launching member is adapted to the motion axis and can move along the motion axis. In this way, the launching member can move along the arc of the motion axis to adjust its angle relative to the platform.

[0020] Optionally, in the first direction, a centerline extending along the first direction and passing through its center passes through the center of the motion axis. This ensures the accuracy of the angle adjustment between the launcher and the platform.

[0021] Optionally, the launching element can move between two extreme positions, which are symmetrically distributed with respect to the center of the motion axis. This facilitates control and further improves the accuracy of angle adjustment.

[0022] Other features and advantages of this specification will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of this specification and, together with their description, serve to explain the principles of this specification.

[0024] Figure 1 This is a schematic diagram of the structure of the ion beam processing equipment in an embodiment of the present invention;

[0025] Figure 2This is a partial structural diagram of the launching component;

[0026] Figure 3 This is a schematic diagram of the structure of the platform, support rod, and the workpiece in an embodiment of the present invention;

[0027] Figure 4 This is an embodiment of the present invention. Figure 1 Air curtain flow diagram;

[0028] Figure 5 This is a comparison diagram of the ion beam divergence boundary of the ion beam processing equipment in the embodiments of the present invention;

[0029] Figure 6 This is a schematic diagram of the gas connection of the ion beam in an embodiment of the present invention;

[0030] Figure 7 This is a top view of the platform and the air extraction port in an embodiment of the present invention.

[0031] Figure label:

[0032] 1-Shell; 10-Cavity; 11-First Half-Shell; 111-Exhaust Port; 12-Second Half-Shell; 121-1a-Third Nozzle; 121-1b-Third Pipeline; 121-1c-Third Gas Flow Controller; m3-Third Gas Curtain; 122-Motion Shaft; 2-Emitting Component; 20-Shell Component; 21-Emitting Surface; 211-Orifice Plate; 211-1-Emitting Port; 211-2a-First Nozzle; 211-2b-First Pipeline; 211-2c-First Gas Flow Controller; m1 - First air curtain; 221- First air inlet pipe; 222- Second air inlet pipe; 3- Platform; 31- First table surface; 311- First area; 312- Second area; 312-1a- Second nozzle; 312-1b- Second pipeline; 312-1c- Second gas flow controller; m2- Second air curtain; 32- Second table surface; 33- Gap; 34- Side wall; 4- Support rod; 5- Blocking air source; 6- Negative pressure device; 7- Workpiece to be processed; S1- First direction; S2- Second direction. Detailed Implementation

[0033] This invention provides an ion beam processing device that, by improving the structure of the ion beam processing device, effectively reduces the diffusion of the ion beam, reduces irradiation of non-processing areas, and minimizes metal particle contamination.

[0034] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0035] Relational terms such as “first” and “second” are used merely to distinguish one component from another that has the same name, without necessarily requiring or implying any such actual relationship or order between the components.

[0036] Please refer to Figures 1 to 7 , Figure 1 This is a schematic diagram of the structure of the ion beam processing equipment in an embodiment of the present invention; Figure 2 This is a partial structural diagram of launcher 2; Figure 3 This is a schematic diagram of the structure of the platform 3, support rod 4, and the workpiece in an embodiment of the present invention; Figure 4 This is an embodiment of the present invention. Figure 1 Air curtain flow diagram; Figure 5 This is a comparison diagram of the ion beam divergence boundary of the ion beam processing equipment in the embodiments of the present invention; Figure 6 This is a schematic diagram of the gas connection of the ion beam in an embodiment of the present invention; Figure 7 This is a top view of the platform 3 and the air extraction port 111 in an embodiment of the present invention.

[0037] As shown in the figure, the ion beam processing equipment includes a shell 1, which encloses an airtight cavity 10. The shell 1 is formed by a first half-shell 11 and a second half-shell 12, which are either integrally manufactured or assembled from separate parts. The shell 1 has an extraction port 111 located in the first half-shell 11. The portion of the first half-shell 11 located within the cavity 10 has an opening, which serves as the extraction port 111. The extraction port 111 is connected to a negative pressure device 6 to draw in gas and other substances inside the cavity 10, thereby maintaining a vacuum environment within the cavity 10.

[0038] The cavity 10 houses a stage 3, which is suspended within the cavity 10. Specifically, the ion beam processing equipment also includes a stage 3 support rod 4, which is perpendicular to the stage 3 and supports the stage 3 at a predetermined position within the cavity 10. The stage 3 is used to hold the workpiece 7 to be processed, such as a wafer. The surface of the stage 3 that supports the wafer is a first platform 31, and a second platform 32, which is connected to the support rod 4 and is positioned opposite to the first platform 31, is also present. The portion of the first platform 31 used to hold the workpiece can rotate around the central axis of the stage 3.

[0039] The cavity 10 is also provided with an emitter 2, which is arranged opposite to the first platform 31 of the stage 3. The emitter 2 is used to emit an ion beam into the cavity 10. The emitter 2 can ionize, filter and accelerate the gas introduced into it to form a directional ion beam outside the ion source. The ion beam is directed at the surface of the workpiece, thereby realizing the processing of the workpiece 7.

[0040] The emitter 2 includes a generally cylindrical shell 20. One end of the shell 20 is provided with a grid 211, and the other end is provided with a first inlet pipe 221. Process gas enters the interior of the shell 20 through the first inlet pipe 221, where it is ionized to form plasma. The plasma is then accelerated by the grid 211 to form a directional ion beam outside the ion source. The shell 20 also has a second inlet pipe 222. The first inlet pipe 221 and the second inlet pipe 222 are located at the same end of the shell 20, that is, the end furthest from the grid 211.

[0041] In a specific example, one end face of the shell 20 along the axis is the emitting surface 21, which is a grid structure with several holes. The several holes of the grid 211 serve as the emitting ports 211-1 of the emitting element 2.

[0042] The emitter 2 also has several first nozzles 211-2a, which are connected to the barrier gas source 5 via a first conduit 211-2b. These first nozzles 211-2a are arranged around the emitter 211-1. The first conduit 211-2b is also equipped with a first gas flow controller 211-2c, which delivers a certain flow rate of barrier gas to the first nozzles 211-2a. It is understood that the control of the first gas flow controller 211-2c includes both flow rate control and injection pressure control. By controlling the flow rate and pressure, a tubular channel is formed by a first gas curtain m1 with a set axial dimension. This allows for the blocking and trimming of the ion beam within its divergence range.

[0043] Here, you can refer to Figure 5 To understand, in Figure 5 The text includes the first ion beam divergence range a1 when the first nozzle 211-2a is not set, and the second ion beam divergence range a2 when the first nozzle 211-2a is set. Figure 5 As can be clearly seen, the divergence boundary of the first ion beam divergence range a1 is located outside the divergence range a2 of the second ion beam. The contact area between the ion beam in the first ion beam divergence range a1 and the stage 3 is larger than the contact area of ​​the ion beam in the second ion beam divergence range a2. This ensures that the ion beam covers the processing area of ​​the workpiece 7 while reducing the contact between the ion beam and the non-processing area.

[0044] In actual operation, the divergence range of the ion beam can be adjusted by adjusting parameters such as the flow rate, air pressure and / or spray angle of the first nozzle 211-2a, so that the ion beam can cover the workpiece 7 while reducing the contact area between the ion beam and the non-processing area of ​​the stage 3.

[0045] In the technical solution of this application, a first nozzle 211-2a is provided on the emitting surface 21. The first nozzle 211-2a is connected to the barrier gas source 5 and is arranged around the ion beam emitting port 211-1. At least one or more openings are formed inside the first nozzle 211-2a, and these openings together constitute the emitting port 211-1. Thus, the first nozzle 211-2a surrounds all the openings used for ion beam emission. During ion beam emission, the first nozzle 211-2a can eject barrier gas outward at a set angle, thereby blocking and trimming the ion beam in the propagation direction, reducing the diffusion range of the ion beam to match the workpiece 7. This reduces the irradiation of non-processed areas by the ion beam and minimizes metal particle contamination.

[0046] In some more specific embodiments, the direction perpendicular to the platform 3 is defined as the first direction S1, and the direction perpendicular to the first direction S1 is defined as the second direction S2. In the embodiment shown in the figure, the first direction S1 is the vertical direction in the figure, that is, the extension direction of the support rod 4. The extension direction of the platform 3 is the second direction S2, that is, the first platform 31 and the second platform 32 both extend along the second direction S2 and are arranged opposite to each other in the first direction S1.

[0047] The second platform 32 of the stage 3 is positioned opposite the air extraction port 111 in the first direction S1. The launcher 2 is located on the side of the stage 3 opposite to the air extraction port 111 and is projected along the first direction S1. The projection range of the stage 3 covers the projection range of the air extraction port 111.

[0048] In the example shown, the platform 3 is cylindrical, and the exhaust port 111 can be circular, square, etc. The area of ​​the platform 3 on the horizontal plane is larger than the area of ​​the exhaust port 111. In this way, the platform 3 covers the exhaust port 111, but does not block the exhaust port 111. The platform 3 is spaced apart from the exhaust port 111 in the first direction S1, and a gap 33 is formed between the platform 3 and the first half-shell 11. The gap 33 serves as a drainage channel, so that the substance entering the exhaust port 111 from the cavity 10 will pass through the gap 33 and then be extracted from the outside of the cavity 10 through the exhaust port 111.

[0049] In this way, in the first direction S1, the exhaust port 111 is located at the lower part of the stage 3, and the projection range of the stage 3 in the first direction S1 covers the range of the exhaust port 111. The emitter 2 is set on the upper part of the stage 3, which maintains the stability of the ion beam processing environment. At the same time, the stage 3 shields the exhaust port 111, which can also ensure the jet stability of the first nozzle 211-2a.

[0050] In the above embodiment, the first platform 31 is located on the side opposite to the exhaust port 111 in the first direction S1. The first platform 31 includes a first region 311 and a second region 312. The second region 312 is distributed around the first region 311 and is located outside the first region 311. The first region 311 is used to place the workpiece 7 to be processed. The second region 312 is provided with a plurality of second nozzles 312-1a, which are connected to the barrier gas source 5. The second nozzles 312-1a are connected to the barrier gas source 5 through a second pipe 312-1b. A second gas flow controller 312-1c is also provided in the second pipe 312-1b. The barrier gas ejected from the second nozzles 312-1a is controlled by controlling the second gas flow controller 312-1c. Because the platform 3 covers the air extraction port 111, a certain pressure difference is formed between the first platform 31 and the gap 33 of the platform 3. Under the action of this pressure difference, the blocking gas ejected from the second nozzle 312-1a will flow into the gap 33.

[0051] Optionally, the second nozzle 312-1a is located radially on the side of the second region 312 closer to the first region 311. This provides further protection for the non-processed area.

[0052] Furthermore, the second nozzle 312-1a can be arranged in several concentric rings in the radial direction. Each ring of the second nozzle 312-1a can be opened or closed according to the size requirements of the workpiece 7, thereby further covering the non-processing area of ​​the first table surface 31 and accommodating workpieces 7 of more sizes.

[0053] In this way, the second nozzle 312-1a cooperates with the exhaust port 111, allowing the air to flow downward from the first platform 31 under the action of the exhaust port 111. During the flow, the air passes through the side wall 34 of the platform 3, thereby forming a second air curtain m2. This second air curtain m2 covers the side wall 34 of the platform 3, thereby protecting the area of ​​the platform 3 not covered by the workpiece, cutting off the path of the local ion beam, and preventing the ion beam from bombarding the exposed area of ​​the platform 3, thus reducing the generation of metal contaminants.

[0054] In the technical solution of this application, the second nozzle 312-1a ejects barrier gas outward along the jet direction p1 of the nozzle; the jet direction p1 of the nozzle is deflected at a certain angle relative to the first direction S1 in a direction away from the first region 311, and the angle ranges from 20° to 90°. This can prevent the barrier gas ejected from the second nozzle 312-1a from interfering with the ion beam processing of the workpiece 7, and ensure the processing effect of the workpiece 7.

[0055] In the above scheme, the ion beam processing equipment includes a driving component connected to the first region 311 to drive the first region 311 to rotate relative to the second region 312. The rotation of the first region 311 drives the workpiece 7 to rotate, ensuring the ion beam processing effect of the workpiece 7.

[0056] In some other embodiments of this application, the portion of the second half-shell 12 that connects to the first half-shell 11 is provided with a plurality of third nozzles 121-1a. The third nozzles 121-1a are distributed around the air extraction port 111, and the third nozzles 121-1a are connected to the blocking air source 5 via a connecting pipe. The third nozzles 121-1a are connected to the blocking air source 5 through a third pipe 121-1b, and the third pipe 121-1b is also provided with a third gas flow controller 121-1c, thereby controlling parameters such as the jet volume of the third nozzles 121-1a.

[0057] Therefore, the third nozzle 121-1a, in conjunction with the exhaust port 111, can form a third gas curtain m3, which can cover the first half-shell 11, thereby preventing the first half-shell 11 from being bombarded by the ion beam, further reducing the contact between the ion beam and the non-processing area, and further reducing metal contamination.

[0058] Optionally, in the first direction S1, the third nozzle 121-1a is opposite to the gap 33 in the second direction S2. Thus, the gas ejected from the third nozzle 121-1a can smoothly pass through the gap 33 and flow out of the exhaust port 111, which not only protects the first half-shell 11, but also increases the discharge rate of metal contaminants in the cavity 10.

[0059] In the example shown, the second half-shell 12 is a hemispherical structure, and a motion shaft 122 is provided on the inner shell wall of the second half-shell 12. The motion shaft 122 is an arc-shaped structure. The launching element 2 is adapted to the motion shaft 122 and can move along the motion shaft 122. In this way, the launching element 2 can move along the arc of the motion shaft 122 to adjust its angle relative to the platform 3.

[0060] Furthermore, in the first direction S1, the centerline of the stage 3 extending along the first direction S1 passes through the center of the motion axis 122. This ensures the accuracy of angle adjustment between the launcher 2 and the stage 3. The launcher 2 can move between two extreme positions, which are symmetrically distributed with respect to the center of the motion axis 122. This facilitates control and further improves the accuracy of angle adjustment.

[0061] The above embodiments can be implemented individually or in combination, and all are within the protection scope of this application. The specific structures of the first half-shell 11 and the second half-shell 12 are only illustrated here as supporting examples, and the other shell structures 1 are also within the protection scope of this application. The barrier gas is an inert gas, such as argon, nitrogen, radon, xenon, and krypton.

[0062] In this embodiment, the first nozzle 211-2a, the second nozzle 312-1a, and the third nozzle 121-1a can adopt the structure of a gas nozzle and have the function of adjusting the ejection direction. Those skilled in the art can choose the type of nozzle themselves. In addition, the first nozzle 211-2a, the second nozzle 312-1a, and the third nozzle 121-1a can all be evenly distributed circumferentially, and adjacent nozzles can be circumferentially spaced or circumferentially connected. When they are circumferentially connected, an approximately wave-shaped structure is formed, etc. All such structures or similar structures are within the protection scope of this application.

[0063] Compared with existing technologies, the advantages of this application are:

[0064] First, the divergence boundary upstream of the ion beam is trimmed by the first nozzle 211-2a, thereby effectively reducing the contact area between the ion beam and the workpiece 7, making it more precise, reducing the contact area between the ion beam and the non-processed surface of the stage 3, and reducing metal contamination.

[0065] Secondly, by selectively opening the second nozzle 312-1a and / or the third nozzle 121-1a, that is, by opening one of them alone or by opening both nozzles simultaneously, a corresponding gas curtain can be formed, thereby protecting the corresponding part, further reducing the contact area between the ion beam and other parts inside the cavity 10, and further reducing the contact area between the ion beam and the non-processing area.

[0066] This article uses specific examples to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the core ideas of the present invention. It should be noted that those skilled in the art can make several improvements and modifications to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. An ion beam processing device, characterized in that, The device includes a shell (1) that forms an airtight cavity (10). The shell (1) has an air extraction port (111) that is connected to a negative pressure device (6). The cavity (10) contains a stage (3) and an emitter (2) that is arranged opposite to the stage (3). The emitter (2) is provided with an ion beam emission port (211-1) and a plurality of first nozzles (211-2a). The first nozzles (211-2a) are connected to a blocking gas source (5). The plurality of first nozzles (211-2a) are arranged around the emission port (211-1).

2. The ion beam processing equipment according to claim 1, characterized in that, The direction in which the stage (3) supports the workpiece (7) is defined as the first direction (S1); The platform (3) is arranged opposite to the air extraction port (111) in the first direction (S1). The launcher (2) is located on the side of the platform (3) opposite to the air extraction port (111) and is projected along the first direction (S1). The projection range of the platform (3) covers the projection range of the air extraction port (111).

3. The ion beam processing equipment according to claim 2, characterized in that, In the first direction (S1), the surface of the platform (3) opposite to the air extraction port (111) is the first platform (31). The first platform (31) includes a first region (311) and a second region (312). The second region (312) is distributed around the first region (311) and is located outside the first region (311). The first area (311) is used to place the workpiece (7) to be processed, and the second area (312) is provided with a plurality of second nozzles (312-1a), which are connected to the blocking air source (5).

4. The ion beam processing equipment according to claim 3, characterized in that, The second nozzle (312-1a) ejects barrier gas outward along the jet direction (P1) of the nozzle; The jet direction (P1) of the nozzle is deflected at a certain angle relative to the first direction (S1) toward a direction away from the first region (311).

5. The ion beam processing equipment according to claim 4, characterized in that, Includes a drive member connected to the first region (311) to drive the first region (311) to rotate relative to the second region (312).

6. The ion beam processing equipment according to claim 2, characterized in that, The portion of the shell (1) with the air extraction port (111) is defined as the first half-shell (11), and the shell (1) further includes a second half-shell (12) covering the first half-shell (11). The second half-shell (12) has a plurality of third nozzles (121-1a) in the part that is connected to the first half-shell (11). The third nozzles (121-1a) are distributed around the air extraction port (111). The third nozzles (121-1a) are connected to the blocking air source (5) through a pipe.

7. The ion beam processing equipment according to claim 6, characterized in that, In the first direction (S1), a gap (33) is formed between the stage (3) and the first half-shell (11). The direction perpendicular to the first direction (S1) is defined as the second direction (S2), and the third nozzle (121-1a) is opposite to the gap (33) in the second direction (S2).

8. The ion beam processing equipment according to claim 6, characterized in that, The second half-shell (12) is hemispherical, and a motion shaft (122) is also provided on the inner shell wall of the second half-shell (12), the motion shaft (122) extending in an arc shape; The launcher (2) is adapted to the motion axis (122) and can move along the motion axis (122).

9. The ion beam processing equipment according to claim 8, characterized in that, In the first direction (S1), the launcher (2) is located on the upper part of the platform (3), which extends along the first direction (S1) and passes through the center line of its center, and also passes through the center of the motion axis (122).

10. The ion beam processing equipment according to any one of claims 1-9, characterized in that, The launching element (2) has a launching surface (21), the launching surface (21) is provided with the first nozzle (211-2a), and at least one or more openings are provided in the region inside the first nozzle (211-2a), the openings together constitute the launching port (211-1).

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