Plasma etching apparatus and etching method thereof

Abstract

The application discloses a kind of plasma etching equipment and etching method thereof, it is related to semiconductor processing technical field, wherein, plasma etching equipment includes reaction cavity, excitation source, electrode main body and drive mechanism, etching chamber is formed in reaction cavity, excitation source is used to generate magnetic field in etching chamber, to excite the gas in etching chamber to form plasma, electrode main body is arranged in etching chamber, at least two accommodating grooves are provided on electrode main body, at least two accommodating grooves are symmetrically arranged relative to the center of magnetic field, each accommodating groove is used to accommodate mask substrate to be etched, drive mechanism is used to drive mask substrate to move and switch between each accommodating groove, mask substrate to be etched can switch position between symmetrically distributed accommodating grooves, can effectively compensate the etching difference caused by plasma density spatial gradient distribution, significantly improve the etching uniformity of mask substrate as a whole, to improve the yield and quality of etching product.

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