Topological quasi-flat-band metal metasurface waveguide structure, design method and electromagnetic device

CN122158911AActive Publication Date: 2026-06-05TSINGHUA SHENZHEN INTERNATIONAL GRADUATE SCHOOL

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TSINGHUA SHENZHEN INTERNATIONAL GRADUATE SCHOOL
Filing Date
2026-05-09
Publication Date
2026-06-05

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Abstract

The application belongs to the field of waveguides, and particularly relates to a topological quasi-flatband metal metasurface waveguide structure, a design method and an electromagnetic device. The application provides a design method of a topological quasi-flatband metal metasurface waveguide structure, which comprises parallel plate waveguides and metal scatterers which jointly constitute a two-dimensional metal metasurface. The metal scatterers in different regions between two parallel metal plates of the parallel plate waveguides are rotated in different directions to form a valley Hall topological phase and a topological edge state. The size of all the metal scatterers is scaled while the rotation angle of each metal scatterer is kept unchanged to adjust the amplitude of an equivalent mass term in an equivalent Hamiltonian until the dispersion of the topological edge state is compressed into a quasi-flatband, and the topological edge state forms a deterministic spatially anchored edge mode along a preset interface section. The rotation angle of the metal scatterer is decoupled from the equivalent mass term, so that independent, stable and engineeringable adjustment of the topological phase characteristics and the dispersion compression capability can be realized.
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