Method of forming a semiconductor device

Abstract

The application discloses a method for forming a semiconductor device. A first electrode layer is formed on a substrate, and a bidirectional threshold function layer is formed on the first electrode layer. A laser annealing process is performed on the bidirectional threshold function layer, and a second electrode layer is formed on the bidirectional threshold function layer. After the bidirectional threshold function layer is formed, the laser annealing process is performed on the bidirectional threshold function layer to reduce same polarity bond and initial state delocalized state defects, thereby inhibiting subsequent threshold voltage drift. Moreover, due to the high coherence, high collimation, high energy density, high precision and other characteristics of the laser, by selecting a specific laser light source and process parameters, rapid heating and quenching of specific materials, specific depths and specific regions can be achieved, the heating efficiency is higher, and the control is more accurate. The laser annealing process can also achieve local defect repair while avoiding grain growth, the heat distribution is limited, the bidirectional threshold function layer is maintained in an amorphous state, and the component interdiffusion with other structures is reduced.

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