A silicon carbide PiN diode with improved breakdown voltage and a method of manufacturing

Abstract

The application provides a silicon carbide PiN diode with improved breakdown voltage and a preparation method. The method comprises the following steps: forming an epitaxial layer on a silicon carbide substrate by lateral epitaxial growth; forming a P-type layer by epitaxial technology or ion implantation; forming a first barrier layer on the P-type layer, etching the first barrier layer to form a through hole, ion implantation, and forming an ion implantation region; removing the first barrier layer, re-forming a second barrier layer, etching the second barrier layer to form a through hole, and then etching the P-type layer; removing the second barrier layer, re-forming a third barrier layer, etching the third barrier layer to form a through hole, ion implantation, and forming a terminal structure; and completing diode manufacturing according to the prior art, so that the electric field concentration effect during reverse bias is avoided, and the breakdown voltage of the device is improved.

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