Indium tin zinc oxide thin film transistor and method of manufacturing the same

By introducing a finned metal insertion layer, a metal induction layer, and a hydrophobic barrier layer into an indium tin zinc oxide thin-film transistor, the problems of insufficient carrier mobility and stability are solved, realizing a high-performance thin-film transistor suitable for 8K displays and wearable devices, and possessing the advantages of low temperature and low cost in industrial applications.

CN122161142APending Publication Date: 2026-06-05SOUTH CHINA UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SOUTH CHINA UNIV OF TECH
Filing Date
2026-01-23
Publication Date
2026-06-05

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Abstract

The application discloses an indium tin zinc oxide thin film transistor and a preparation method thereof. The composition of the indium tin zinc oxide thin film transistor comprises a substrate, a gate electrode layer, a gate dielectric layer, an indium tin zinc oxide active layer, a source electrode layer, a drain electrode layer, a metal-induced layer and a hydrophobic barrier layer which are sequentially arranged in layers, and further comprises a first indium tin zinc oxide layer, a fin-shaped protruding metal insertion layer and a second indium tin zinc oxide layer which are arranged in the indium tin zinc oxide active layer. The indium tin zinc oxide thin film transistor has good bias stability while ensuring high mobility, and the preparation process is simple, low-temperature and low-cost, and is suitable for large-scale industrial application in the display field.
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