Micro-led micro display chip and preparation method

Abstract

This application relates to the field of display chip technology, proposing a Micro-LED microdisplay chip and its fabrication method. The chip includes: a driving substrate, a light-emitting structure, a grid network, and a color conversion structure. The light-emitting structure includes multiple LED mesas spaced apart on the driving substrate and driven individually. The grid network includes multiple metal dielectric rings surrounding portions of the LED mesas. The color conversion structure includes a first unit that independently covers the portion of the LED mesas not surrounded by the metal dielectric rings, a second unit that covers the remaining area not surrounded by the metal dielectric rings, and a third unit that fills within the metal dielectric rings. Full-color display is achieved when a pixel unit includes at least one LED mesas corresponding to the first unit, at least one LED mesas corresponding to the second unit, and at least one LED mesas corresponding to the third unit. The simplified arrangement of the metal dielectric rings eliminates the need for resin support material, improving the utilization rate of the pixel light-emitting area and enhancing brightness and lifespan.

Description

Technical Field

[0001] This application relates to the field of display chip technology, specifically to a Micro-LED microdisplay chip and its fabrication method. Background Technology

[0002] Micro-LED microdisplay chips, also known as miniature light-emitting diodes, integrate arrayed micron-sized LED light-emitting units onto an active addressable driver substrate to achieve individual control and illumination, thereby outputting displayed images. Full-color microdisplays have a wide range of applications, especially near-eye displays (including AR, VR, etc.).

[0003] In quantum dot and / or phosphor pink conversion-type Micro-LED microdisplay chips, to achieve effective isolation of pixels of different colors and avoid light crosstalk, traditional structures typically employ a design where a metal dielectric ring is wrapped around the color conversion material, and the metal dielectric ring is supported by a resin support material. However, traditional structures have the following drawbacks: Aging of resin support materials. Traditional structures require resin support materials for support. These materials are susceptible to aging due to factors such as light radiation and temperature changes, leading to decreased stability of the metal dielectric ring and affecting the chip's lifespan and reliability.

[0004] Low utilization rate of pixel light-emitting area. In traditional structures, each pixel requires an independent metal dielectric ring, which severely compresses the effective light-emitting area within the pixel region. In addition, the resin support material also occupies a certain amount of pixel area space, resulting in insufficient utilization of the light-emitting area in traditional structures and reducing the brightness of the chip.

[0005] The process is highly complex. Traditional structures require complex process steps, resulting in significant yield losses during the process.

[0006] Therefore, there is an urgent need to propose a microdisplay chip structure and fabrication method that can increase the light-emitting area, extend the service life, and reduce the process complexity while suppressing crosstalk. Summary of the Invention

[0007] To address the aforementioned issues, this application provides a Micro-LED microdisplay chip and its fabrication method. By optimizing the chip's structural design, eliminating the resin support material in traditional structures, and simplifying the arrangement of the metal dielectric rings in the grid network, the utilization rate of the pixel light-emitting area is improved, thereby enhancing the chip's brightness while suppressing crosstalk between different colors. Simultaneously, by simplifying the process steps, the complexity of the process and production costs are reduced, thus improving the chip's yield.

[0008] The technical solution adopted in this application is as follows: In a first aspect, a Micro-LED microdisplay chip is provided, comprising: a driving substrate, a light-emitting structure, a grid network, and a color conversion structure; The light-emitting structure includes multiple LED mesa surfaces, which are arranged at intervals on the driving substrate, and each LED mesa surface is driven individually by the driving substrate. The grid network includes multiple metal dielectric rings, each of which is independently arranged on a portion of the LED mesa, so that each portion of the LED mesa is surrounded by a metal dielectric ring; The color conversion structure includes a first unit, a second unit, and a third unit; the first unit independently covers the portion of the LED platform not surrounded by the metal dielectric ring, the second unit covers the remaining area not surrounded by the metal dielectric ring, and the third unit fills the metal dielectric ring; When a pixel unit includes at least one LED platform corresponding to the first unit, at least one LED platform corresponding to the second unit, and at least one LED platform corresponding to the third unit, full-color display of the microdisplay chip is achieved.

[0009] Optionally, the optical density of both the first and second units is not less than 2, and the wavelength of the light emitted through the third unit is shorter than the wavelength of the light emitted through the first unit and the wavelength of the light emitted through the second unit.

[0010] Optionally, the arrangement of multiple metal dielectric rings is such that only one LED platform in a 2×2 unit is surrounded by a metal dielectric ring; The arrangement of the first unit is as follows: in the 2×2 unit, only the LED platform diagonally opposite to the LED platform surrounded by the metal dielectric ring is covered by the first unit.

[0011] Optionally, the lateral dimension of the LED tabletop ranges from 0.5 to 10 μm, the lateral inner dimension of the metal dielectric ring ranges from 1.0 to 10.5 μm, and the inner diameter of the metal dielectric ring is larger than the diameter of the LED tabletop, and the wall thickness of the metal dielectric ring is 0.1 to 0.5 μm.

[0012] Optionally, the thickness of the first, second, and third units can range from 2 to 5 μm.

[0013] Optionally, the first unit converts the light emitted by the corresponding LED platform to green, the second unit converts the light emitted by the corresponding LED platform to red, and the third unit converts the light emitted by the corresponding LED platform to blue; Alternatively, the first unit converts the light emitted by the corresponding LED platform to red, the second unit converts the light emitted by the corresponding LED platform to green, and the third unit converts the light emitted by the corresponding LED platform to blue.

[0014] Optionally, the materials for the first, second, and third units may include quantum dots and / or phosphors.

[0015] Optionally, the first unit converts the light emitted by the corresponding LED platform into green, the second unit converts the light emitted by the corresponding LED platform into red, and the third unit transmits the blue light emitted by the corresponding LED platform. Alternatively, the first unit converts the light emitted by the corresponding LED platform into red, the second unit converts the light emitted by the corresponding LED platform into green, and the third unit transmits the blue light emitted by the corresponding LED platform.

[0016] Optionally, the materials of the first and second units include quantum dots and / or phosphors, and the material of the third unit is a transparent resin.

[0017] Secondly, a method for fabricating a Micro-LED microdisplay chip is provided, comprising the following steps: Provide driving substrate; A light-emitting structure is formed, which includes multiple LED mesa, which are arranged at intervals on a driving substrate, and each LED mesa is driven individually by the driving substrate. A grid network is formed, which includes multiple metal dielectric rings. Each of the multiple metal dielectric rings is independently set on a portion of the LED mesa, so that the portion of the LED mesa is surrounded by the metal dielectric rings. A color conversion structure is formed, which includes a first unit, a second unit, and a third unit; the first unit independently covers the portion of the LED platform not surrounded by the metal dielectric ring, the second unit covers the remaining area not surrounded by the metal dielectric ring, and the third unit fills the metal dielectric ring; When a pixel unit includes at least one LED platform corresponding to the first unit, at least one LED platform corresponding to the second unit, and at least one LED platform corresponding to the third unit, full-color display of the microdisplay chip is achieved.

[0018] Optionally, forming a raster network and a color conversion structure includes: Each independent third unit is formed on a portion of the LED table surface; A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching, so that part of the metal dielectric layer is retained on the sidewall of the third unit to form multiple metal dielectric rings respectively; Each independent first unit is formed on the portion of the LED platform not surrounded by the metal dielectric ring; A second unit is formed in the remaining areas not surrounded by the metallic dielectric ring.

[0019] Optionally, forming a raster network and a color conversion structure includes: Each unit is formed into an independent third unit by arranging only one LED tabletop point in the 2×2 unit; A metal dielectric layer is sputtered, and part of the metal dielectric layer is removed by vertical etching, so that part of the metal dielectric layer is retained on the sidewall of the third unit to form multiple metal dielectric rings respectively; Each unit is formed by arranging the LED platform points diagonally opposite to the LED platform surrounded by the metal dielectric ring in a 2×2 unit. A second unit is formed in the remaining areas not surrounded by the metallic dielectric ring.

[0020] Optionally, a light-emitting structure is formed, including: A substrate is provided, on which an LED epitaxial material layer is disposed; Provide driving substrate; The LED epitaxial material layer is bonded to the driver substrate; Peel off the substrate; Based on the MESA pattern designed by the patterned mask, the LED epitaxial material layer is etched to form multiple LED mesa; The electrical connection structure allows each LED platform to be driven individually by a driver substrate.

[0021] Optionally, bonding the LED epitaxial material layer to the driving substrate includes: A first bonding layer is formed on the driving substrate; A second bonding layer is formed on the LED epitaxial material layer; The first bonding layer and the second bonding layer are bonded together using a bonding process.

[0022] The above-mentioned technical solution adopted in this application can achieve the following beneficial effects: The chip provided in this application includes: a driving substrate, a light-emitting structure, a grid network, and a color conversion structure; the light-emitting structure includes multiple LED mesas, which are spaced apart on the driving substrate, and each LED mesa is driven individually by the driving substrate; the grid network includes multiple metal dielectric rings, which are independently disposed on a portion of the LED mesas so that the portion of the LED mesa is surrounded by the metal dielectric rings; the color conversion structure includes a first unit, a second unit, and a third unit; the first unit independently covers the portion of the LED mesa not surrounded by the metal dielectric rings, the second unit covers the remaining area not surrounded by the metal dielectric rings, and the third unit fills the metal dielectric rings; when a pixel unit includes at least one LED mesa corresponding to the first unit, at least one LED mesa corresponding to the second unit, and at least one LED mesa corresponding to the third unit, full-color display of the microdisplay chip is realized.

[0023] The Micro-LED microdisplay chip proposed in this application arranges metal dielectric rings by independently corresponding to some LED mesa, which reduces the number of metal dielectric rings and makes great use of the light-emitting area. The light-emitting area is increased by 30-60% compared with the traditional structure, thereby improving the display brightness.

[0024] The Micro-LED microdisplay chip proposed in this application eliminates the resin support material of the traditional structure, thereby freeing up a large amount of pixel area space, while avoiding the impact of resin support material aging on chip performance and significantly improving the chip's lifespan.

[0025] The Micro-LED microdisplay chip proposed in this application reduces complex process steps and lowers production costs by suppressing crosstalk through the high reflectivity barrier of the metal dielectric ring and the high light absorption design of the first and second units. Attached Figure Description

[0026] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 A top view showing a conventional microdisplay chip structure; Figure 2 A schematic diagram of a conventional microdisplay chip with an AA cross-section is shown. Figure 3 A top view of a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 4 A schematic BB cross-sectional view of a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 5 A flowchart illustrating a method for fabricating a Micro-LED microdisplay chip according to an embodiment of this application is shown; Figure 6 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after the formation of the light-emitting structure is shown. Figure 7 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after the formation of the third unit is shown; Figure 8 A schematic cross-sectional view of the Micro-LED microdisplay chip after the formation of the metal dielectric layer according to the first embodiment of this application is shown. Figure 9 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the first embodiment of this application after the formation of the metal dielectric ring is shown. Figure 10 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the second embodiment of this application after forming a color conversion structure is shown. Figure 11 A top view of a Micro-LED microdisplay chip according to a second embodiment of this application after forming a color conversion structure is shown; Figure 12 A cross-sectional view of the Micro-LED microdisplay chip according to the third embodiment of this application after the formation of the third unit is shown. Figure 13 This diagram shows a cross-sectional view of a Micro-LED microdisplay chip according to a third embodiment of this application after the formation of a metal dielectric layer. Figure 14 A schematic cross-sectional view of the Micro-LED microdisplay chip according to the third embodiment of this application after the formation of the metal dielectric ring is shown. Figure 15 A cross-sectional view of the Micro-LED microdisplay chip according to the third embodiment of this application after forming a color conversion structure is shown. Figure 16 A top view of the Micro-LED microdisplay chip according to the third embodiment of this application after forming a color conversion structure is shown; Figure 17 A cross-sectional view of the Micro-LED microdisplay chip according to the fourth embodiment of this application after forming a color conversion structure is shown. Figure 18 A top view of the Micro-LED microdisplay chip according to the fourth embodiment of this application after forming a color conversion structure is shown. Detailed Implementation

[0027] Exemplary embodiments of this application will now be described in more detail. However, it should be understood that this application may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of this application and to fully convey the scope of this application to those skilled in the art.

[0028] This application discloses numerous different embodiments or examples for implementing various structures. To simplify the disclosure, specific examples of components and arrangements are described herein. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. Additionally, this application provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0029] Generally, terms can be understood at least in part according to their usage in this application. For example, the term "one or more" as used in this application, at least in part according to this application, can be used to describe any component, structure, or feature in the singular, or can be used to describe a combination of components, structures, or features in the plural. Similarly, terms such as "a," "an," or "the" can also be understood, at least in part according to this application, to convey either a singular or a plural usage. Additionally, the term "based on..." can be understood not necessarily to convey an exclusive set of factors, but can instead, at least in part according to the context, allow for additional factors that do not necessarily have to be explicitly described.

[0030] It should be noted that, in the description of this application, the terms “on,” “above,” “on top of,” “above,” etc., should be interpreted in the broadest sense, meaning that a description containing these terms is interpreted as “a component may be disposed on another component in direct contact, or there may be an intermediate component or layer between the components.”

[0031] For ease of description, this application may also use spatial relative terms such as “under,” “below,” “below,” “below,” “upper,” and “lower” to describe the relationship between one component and another component shown in the accompanying drawings. In addition to the orientations described in the drawings, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways, and the spatial relative descriptions used in this application can be interpreted accordingly.

[0032] Figure 1 A top view of a microdisplay chip with a conventional structure is shown. Figure 2 A schematic diagram of the AA cross-sectional structure of a conventional microdisplay chip is shown. (Refer to...) Figures 1-2 As shown, a microdisplay chip with a traditional structure is explained.

[0033] In a conventional microdisplay chip, a light-emitting structure 2' is formed on a driving substrate 1'. The light-emitting structure 2' may include multiple LED mesas, which are arranged at intervals on the driving substrate 1', and each LED mesas is individually driven by the driving substrate 1'. The structural description of the driving substrate 1' and the light-emitting structure 2' will be described in detail later.

[0034] In order to achieve effective isolation of pixels of different colors and avoid light crosstalk, the traditional structure sets a metal dielectric ring 31' for each LED platform and supports the metal dielectric ring 31' with resin support material 5'.

[0035] Within each metal dielectric ring 31', color conversion units are filled to form a color conversion structure 4'. When the LED mesa does not emit blue light, a first color conversion unit is filled in a portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a first color (e.g., green); a second color conversion unit is filled in a portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a second color (e.g., red); and a third color conversion unit is filled in the remaining portion of the metal dielectric ring 31' to convert the light emitted by the corresponding LED mesa into a third color (e.g., blue). Each pixel unit corresponds to at least one LED mesa filled with a first color conversion unit, one LED mesa filled with a second color conversion unit, and one LED mesa filled with a third color conversion unit, thus achieving full-color display.

[0036] However, the traditional structure has the following drawbacks: First, the traditional structure requires a resin support material 5' to support the metal dielectric ring 31'. However, the resin support material 5' is susceptible to aging due to factors such as light radiation and temperature changes, which leads to a decrease in the stability of the metal dielectric ring 31' and affects the chip's lifespan and reliability.

[0037] Secondly, because each LED mesa has an independent metal dielectric ring 31', there are two light-blocking metal layers between adjacent LED mesas. However, in practice, only one light-blocking metal layer is needed between adjacent LED mesas. The redundant light-blocking metal layers severely compress the effective light-emitting area within the pixel region. In addition, the resin support material 5' in the traditional structure also occupies a certain amount of pixel region space as a support structure, further compressing the effective light-emitting area. This results in insufficient utilization of the light-emitting area in the traditional structure, reducing the brightness of the chip.

[0038] In addition, traditional structures require complex process steps, resulting in significant yield losses during the process.

[0039] To address the shortcomings of traditional structures, this application proposes a Micro-LED microdisplay chip to overcome the problems associated with traditional structures.

[0040] Figure 3 A top view of the Micro-LED microdisplay chip proposed in this application is shown. Figure 4 A schematic diagram of the BB cross-sectional structure of the Micro-LED microdisplay chip proposed in this application is shown. (Refer to...) Figures 3-4 The Micro-LED microdisplay chip proposed in this application is illustrated below.

[0041] The Micro-LED microdisplay chip proposed in this application includes: a driving substrate 1, a light-emitting structure 2, a grid network 3, and a color conversion structure 4.

[0042] The light-emitting structure 2 includes multiple LED mesa 21, which are arranged at intervals on the driving substrate 1, and each LED mesa 21 is driven individually by the driving substrate 1.

[0043] The grid network 3 includes multiple metal dielectric rings 31, each of which is independently disposed on a portion of the LED mesa 21, so that the portion of the LED mesa 21 is surrounded by the metal dielectric rings 31.

[0044] The color conversion structure 4 includes a first unit 41, a second unit 42 and a third unit 43; the first unit 41 independently covers the portion of the LED platform 21 not surrounded by the metal dielectric ring 31, the second unit 42 covers the remaining area not surrounded by the metal dielectric ring 31, and the third unit 43 fills the metal dielectric ring 31. When a pixel unit includes at least one LED platform 21 corresponding to the first unit 41, at least one LED platform 21 corresponding to the second unit 42, and at least one LED platform 21 corresponding to the third unit 43, full-color display of the micro display chip is realized.

[0045] The driving substrate 1 of the Micro-LED microdisplay chip proposed in this application can be the same as the driving substrate 1' of a conventional structure, and the light-emitting structure 2 of the Micro-LED microdisplay chip proposed in this application can be the same as the light-emitting structure 2' of a conventional structure. The driving substrate 1 and the light-emitting structure 2 will be described in detail below.

[0046] The driving substrate 1 may include a substrate 11, a driving circuit, and multiple contacts connected to the driving circuit (the multiple contacts may include a first contact 12 and a second contact 13). The driving substrate 1 may be provided with a circuit layer including a silicon-based CMOS (Complementary Metal Oxide Semiconductor) backplane, a TFT glass substrate, or a thin-film field-effect transistor, etc., to form the driving circuit. The material of the substrate 11 may include semiconductor materials such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, cobalt phosphide, etc.; it may also include non-conductive materials such as glass, plastic, sapphire wafers, etc.

[0047] Multiple LED mesa 21 can be arranged on the driving substrate 1 in a regular or irregular manner. The driving substrate 1 can refer to the control panel of the multiple LED mesa 21. The driving substrate 1 generates driving signals based on the image to be displayed and applies them to the multiple LED mesa 21, so that each LED mesa 21 independently releases a light beam in response to the driving signals.

[0048] The LED display panel 21 can be a miniature light-emitting diode (LED) or a miniature organic light-emitting diode (OLED). The miniature LED is formed based on inorganic semiconductor materials, such as gallium nitride, aluminum gallium nitride, gallium arsenide, and aluminum gallium indium phosphide. The miniature OLED is formed based on organic materials, such as small molecules, polymers, and phosphorescent materials.

[0049] Each LED platform 21 can be trapezoidal in shape. That is, the sidewalls of the LED platform 21 can be sloping, and the angle between the sidewalls and the top surface of the LED platform 21 can be obtuse, thereby improving the light-focusing effect of the LED platform 21. Of course, the LED platform 21 can also be columnar, in which case the angle between the sidewalls and the top surface of the LED platform 21 is a right angle.

[0050] The Micro-LED microdisplay chip can be a common cathode structure, a common anode structure, or each chip can be independent. Figure 4 In the case shown, the Micro-LED microdisplay chip has a common cathode structure.

[0051] Specifically, each LED mesa 21 may include a first electrode layer 211, a bonding layer 212 disposed on the first electrode layer 211, and an epitaxial layer 213 disposed on the bonding layer 212. Multiple LED mesa 21 are respectively connected to multiple first contacts 12 (anode contacts) of the driving substrate 1. Passivation layers 22 are disposed on the sidewalls of the first electrode layer 211, the bonding layer 212, and the epitaxial layer 213. A transparent electrode layer 23 covers the multiple LED mesa 21, the passivation layer 22, and the driving substrate 1. The transparent electrode layer 23 is connected to the epitaxial layer 213 of each LED mesa 21 and to the second contacts 13 (cathode contacts) of the driving substrate 1. In this case, the multiple LED mesa 21 form a common cathode structure through a common cathode—the transparent electrode layer 23.

[0052] For an LED platform 21, its first electrode layer 211 is connected to a first contact 12 of the driving substrate 1. A bonding layer 212 is disposed on the first electrode layer 211. The material of the first electrode layer 211 can be a metal or a metal alloy, including indium tin oxide, chromium, platinum, gold, aluminum, germanium, tin, indium, copper, or titanium, etc.

[0053] An epitaxial layer 213 is disposed on the bonding layer 212. The epitaxial layer 213 may include a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer stacked together. The first doped semiconductor layer may be a p-type GaN or InGaN layer formed by doping or ion implantation, etc., and the first doped semiconductor layer may be a multilayer structure. The second doped semiconductor layer may be an n-type GaN or InGaN layer formed by doping or ion implantation, etc., and the second doped semiconductor layer may also be a multilayer structure. The light-emitting layer is a layer that outputs light of a specific wavelength based on the recombination of holes provided by the first doped semiconductor layer and electrons provided by the second doped semiconductor layer. The light-emitting layer may have a single quantum well structure or a multiple quantum well (MQW) structure, and may also have well layers and barrier layers stacked alternately.

[0054] The passivation layer 22 covers the sidewalls of the first electrode layer 211, the bonding layer 212, and the epitaxial layer 213. The material of the passivation layer 22 may include inorganic or organic materials. Inorganic materials may include, but are not limited to, any one or a combination of silicon dioxide, aluminum oxide, zirconium dioxide, titanium dioxide, silicon nitride, and hafnium oxide; organic materials include any one or a combination of black matrix photoresist, color filter photoresist, polyimide, bank adhesive, overcoat adhesive, near-ultraviolet negative photoresist, and styrene.

[0055] A transparent electrode layer 23 is covered on multiple LED mesa 21, passivation layer 22, and driving substrate 1. The transparent electrode layer 23 is connected to the epitaxial layer 213 of each LED mesa 21 and to the second contact 13 of the driving substrate 1. The transparent electrode layer 23 can be a conductive and highly transparent thin film material, which may include: indium tin compound, conductive SiO2, conductive PI, molybdenum, silver, etc.

[0056] The light-emitting structure 2 has a grid network 3, which includes multiple metal dielectric rings 31. According to the arrangement of the multiple LED mesa 21, the multiple metal dielectric rings 31 are independently and correspondingly disposed on a portion of the LED mesa 21.

[0057] In some alternative embodiments, the multiple metal dielectric rings 31 are arranged such that only one LED platform 21 in a 2×2 unit is surrounded by the metal dielectric rings 31. That is, refer to... Figure 3 As shown, in a 2×2 unit, only one LED platform 21 is surrounded by a metal dielectric ring 31.

[0058] In practice, the arrangement of the metal dielectric rings 31 is not limited to 2×2 units. They can also be arranged in 3×3 units, with only one LED mesa 21 surrounded by the metal dielectric rings 31; or in 4×4 units, with only one LED mesa 21 surrounded by the metal dielectric rings 31. In more extended cases, the arrangement of the metal dielectric rings 31 can be irregular, as long as they are distributed to a portion of the LED mesa 21. In other words, the core function of the grid network 3 is to divide the multiple LED mesa 21 into a portion surrounded by the metal dielectric rings 31 and another portion not surrounded by the metal dielectric rings 31.

[0059] A color conversion structure 4 is covered on the LED platform 21. The color conversion structure 4 includes a first unit 41, a second unit 42, and a third unit 43.

[0060] The first unit 41 independently covers the portion of the LED platform 21 not surrounded by the metal dielectric ring 31, the second unit 42 covers the remaining area not surrounded by the metal dielectric ring 31, and the third unit 43 fills the metal dielectric ring 31.

[0061] In some optional embodiments, when multiple metal dielectric rings 31 are arranged in a 2×2 unit such that only one LED mesa 21 is surrounded by a metal dielectric ring 31, the arrangement of the first unit 41 is such that only the LED mesa 21 diagonally opposite to the LED mesa 21 surrounded by the metal dielectric ring 31 in the 2×2 unit is covered by the first unit 41. That is, refer to Figure 3As shown, in a 2×2 unit, only one LED platform 21 diagonally opposite to the LED platform 21 surrounded by the metal dielectric ring 31 is covered by the first unit 41.

[0062] In some alternative embodiments, the optical density of both the first unit 41 and the second unit 42 is not less than 2, and the wavelength of the light emitted through the third unit 43 is shorter than the wavelength of the light emitted through the first unit 41 and the wavelength of the light emitted through the second unit 42.

[0063] To prevent cross-lighting between the light passing through the first unit 41 and the light passing through the second unit 42, the film thickness and film material concentration of the first unit 41 and the second unit 42 are modulated to make the OD (optical density) of the film layer ≥2, thereby suppressing transverse cross-lighting through high absorbance.

[0064] In some alternative implementations, when the LED platform 21 does not emit blue light, the first unit 41 converts the light emitted by the corresponding LED platform 21 to green, the second unit 42 converts the light emitted by the corresponding LED platform 21 to red, and the third unit 43 converts the light emitted by the corresponding LED platform 21 to blue.

[0065] Alternatively, if the LED platform 21 does not emit blue light, the first unit 41 converts the light emitted by the corresponding LED platform 21 to red, the second unit 42 converts the light emitted by the corresponding LED platform 21 to green, and the third unit 43 converts the light emitted by the corresponding LED platform 21 to blue.

[0066] At this point, the first unit 41, the second unit 42, and the third unit 43 can all be photoluminescent color conversion materials, which may include quantum dots and / or phosphors. The phosphors may be yttrium aluminum garnet, cerium phosphors, (oxy)nitride phosphors, silicate phosphors, and Mn4+ activated fluoride phosphors, etc. The quantum dots may include one or more combinations of CdSe, CdS, CdZnSe, CdZnS, CdZnSeS, ZnSeS, ZnSe, CuInS, CuInSe, InP, InZnP, and perovskite quantum dots, etc.

[0067] Because shorter wavelengths of light have stronger penetrating power and more significant lateral diffusion, blue light is more prone to cross-pixel crosstalk than red and green light, leading to a decrease in color purity. The high reflectivity of the metal dielectric ring 31 forms a physical optical barrier for blue light, confining it within the ring and preventing it from diffusing to adjacent pixel areas. Red and green light, with their longer wavelengths and weaker penetrating power, only require the first unit 41 and the second unit 42 to satisfy OD≥2 to suppress crosstalk.

[0068] In some alternative implementations, when the LED platform 21 emits blue light, the first unit 41 converts the light emitted by the corresponding LED platform 21 into green, the second unit 42 converts the light emitted by the corresponding LED platform 21 into red, and the third unit 43 transmits the blue light emitted by the corresponding LED platform 21.

[0069] Alternatively, when the LED platform 21 emits blue light, the first unit 41 converts the light emitted by the corresponding LED platform 21 into red, the second unit 42 converts the light emitted by the corresponding LED platform 21 into green, and the third unit 43 transmits the blue light emitted by the corresponding LED platform 21.

[0070] At this point, both Unit 41 and Unit 42 can be photoluminescent color conversion materials, which may include quantum dots and / or phosphors. The phosphors may be yttrium aluminum garnet, cerium phosphors, (oxy)nitride phosphors, silicate phosphors, and Mn4+ activated fluoride phosphors, etc. The quantum dots may include one or more combinations of CdSe, CdS, CdZnSe, CdZnS, CdZnSeS, ZnSeS, ZnSe, CuInS, CuInSe, InP, InZnP, and perovskite quantum dots. The material of Unit 43 is a transparent resin.

[0071] Since the function of transparent resin (such as polymethyl methacrylate PMMA) is to transmit blue light without color conversion, it cannot suppress crosstalk by its own OD value. If it is not placed inside the metal dielectric ring 31, the blue light will directly diffuse to adjacent pixel areas, causing crosstalk. Therefore, by filling the metal dielectric ring 31 with transparent resin, the metal dielectric ring 31 forces the blue light to be confined within the ring, thereby forming physical isolation from other pixel areas.

[0072] Through the above-described embodiments, when a pixel unit includes at least one LED mesa 21 corresponding to the first unit 41, at least one LED mesa 21 corresponding to the second unit 42, and at least one LED mesa 21 corresponding to the third unit 43, full-color display of the Micro-LED microdisplay chip can be realized.

[0073] For the Micro-LED microdisplay chip proposed in this application, the lateral dimension of each LED mesa 21 ranges from 0.5 to 10 μm. The lateral inner dimension of the metal dielectric ring 31 ranges from 1.0 to 10.5 μm, and the lateral inner dimension of the metal dielectric ring 31 is larger than the lateral dimension of the LED mesa 21 (i.e., the lateral inner dimension of the metal dielectric ring 31 is approximately 0.5 μm larger than the lateral dimension of the LED mesa 21 it surrounds).

[0074] The size of the metal dielectric ring 31 must match the size of the LED tabletop 21 to ensure that the metal dielectric ring 31 can completely surround the LED tabletop 21 and prevent the light emitted by the LED tabletop 21 from leaking into adjacent areas.

[0075] The wall thickness of the metal dielectric ring 31 is 0.1~0.5μm. This wall thickness ensures that the metal dielectric ring 31 has sufficient structural strength and reflectivity to achieve effective optical blocking, while also reducing the space occupied by the metal dielectric ring 31 in the pixel area.

[0076] The metal dielectric ring 31 can be made of a highly reflective metal material to achieve light reflection, thereby preventing cross-color light.

[0077] The thickness of the first unit 41, the second unit 42, and the third unit 43 ranges from 2 to 5 μm. This thickness ensures that the first unit 41 and the second unit 42 can fully absorb the light emitted by the LED mesa 21 and convert it into the target color, while avoiding light scattering loss and manufacturing difficulties caused by excessive thickness.

[0078] The metal dielectric ring 31 can be a circular ring or a ring of other shapes. For example, the cross-section of the metal dielectric ring 31 is a square.

[0079] Figure 5 A schematic flowchart illustrating a method for fabricating a Micro-LED microdisplay chip according to an embodiment of this application is shown. (Refer to...) Figure 5 The preparation method proposed in this application includes the following steps: Step S1, provide driving substrate 1; Step S2: Forming a light-emitting structure 2, which includes multiple LED mesa 21. The multiple LED mesa 21 are arranged at intervals on the driving substrate 1, and each LED mesa 21 is driven individually by the driving substrate 1.

[0080] Step S3: Forming a grid network 3. The grid network 3 includes multiple metal dielectric rings 31. Each of the multiple metal dielectric rings 31 is independently disposed on a portion of the LED platform 21, so that the portion of the LED platform 21 is surrounded by the metal dielectric rings 31.

[0081] Step S4: A color conversion structure 4 is formed, which includes a first unit 41, a second unit 42, and a third unit 43. The first unit 41 independently covers the portion of the LED mesa 21 not surrounded by the metal dielectric ring 31, the second unit 42 covers the remaining area not surrounded by the metal dielectric ring 31, and the third unit 43 fills the metal dielectric ring 31. When a pixel unit includes at least one LED mesa 21 corresponding to the first unit 41, at least one LED mesa 21 corresponding to the second unit 42, and at least one LED mesa 21 corresponding to the third unit 43, full-color display of the microdisplay chip is achieved.

[0082] In some alternative implementations, forming a raster network 3 and forming a color conversion structure 4 includes: Each independent third unit 43 is formed on a portion of the LED tabletop 21; Sputtering a metal dielectric layer 31-a, and removing part of the metal dielectric layer 31-a by vertical etching, so that part of the metal dielectric layer 31-a is retained on the sidewall of the third unit 43 to form multiple metal dielectric rings 31 respectively; Each independent first unit 41 is formed on the portion of the LED platform 21 that is not surrounded by the metal dielectric ring 31; A second unit 42 is formed in the remaining area not surrounded by the metal dielectric ring 31.

[0083] In some alternative embodiments, the light-emitting structure 2 is formed, including: A substrate is provided, on which an LED epitaxial material layer is disposed; Provide a driver substrate 1; The LED epitaxial material layer is bonded to the driving substrate 1; Peel off the substrate; Based on the MESA pattern designed by the patterned mask, the LED epitaxial material layer is etched to form multiple LED mesa 21; The electrical connection structure is formed so that each LED platform 21 is driven individually by the driving substrate 1.

[0084] Specifically, bonding the LED epitaxial material layer to the driving substrate 1 includes: A first bonding layer is formed on the driving substrate 1; A second bonding layer is formed on the LED epitaxial material layer; The first bonding layer and the second bonding layer are bonded together using a bonding process.

[0085] The following example illustrates the fabrication method of a Micro-LED microdisplay chip, using the arrangement of multiple metal dielectric rings 31 as an example: in a 2×2 unit, only one LED mesa 21 is surrounded by the metal dielectric ring 31, and in the arrangement of the first unit 41 as an example: only the LED mesa 21 diagonally opposite to the LED mesa 21 surrounded by the metal dielectric ring 31 in the 2×2 unit is covered by the first unit 41.

[0086] Figures 6-9 and Figures 3-4 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the first embodiment is shown. See also Figures 6-9 and Figures 3-4 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0087] Figure 6 A schematic cross-sectional view of the structure after forming multiple light-emitting structures 2 is shown. See also some embodiments of this application. Figure 6 Forming a light-emitting structure 2, comprising: A substrate is provided, an LED epitaxial material layer is grown on the substrate, and a first bonding material is grown on the LED epitaxial material layer.

[0088] A driving substrate 1 is provided. The driving substrate 1 may be provided with a circuit layer including a silicon-based CMOS backplane, a TFT glass substrate, or a thin-film field-effect transistor, etc., to form a driving circuit. The driving substrate 1 also includes a plurality of contacts connected to the driving circuit. The plurality of contacts include a plurality of first contacts 12 and second contacts 13. A first electrode material and a second bonding material are grown on the driving substrate 1.

[0089] The LED epitaxial material layer, the first bonding material, the first electrode material, and the second bonding material can be formed by deposition.

[0090] The first and second bonding materials are metal-bonded together, and the substrate is then peeled off from the LED epitaxial material layer. Substrate peeling methods include, but are not limited to, laser peeling, dry etching, wet etching, and mechanical polishing.

[0091] Thinning operations are performed on the LED epitaxial material layer, including dry etching, wet etching, or mechanical polishing.

[0092] Based on the MESA pattern designed using a patterned mask, the LED epitaxial material layer is etched, followed by the etching of the bonding material and the first electrode material. The etched LED epitaxial material layer forms multiple epitaxial layers 213, the etched bonding material forms multiple bonding layers 212, and the etched first electrode material forms multiple first electrode layers 211. Each first electrode layer 211 is connected to each first contact 12, each bonding layer 212 is located on each first electrode layer 211, and each epitaxial layer 213 is located on each bonding layer 212. Etching can be performed using either dry or wet methods.

[0093] Passivation layers 22 are deposited on the side surfaces of multiple epitaxial layers 213, multiple bonding layers 212, and multiple first electrode layers 211 to form multiple LED mesa 21. Transparent electrode material is deposited on the multiple LED mesa 21 and the driving substrate 1 to form a transparent electrode layer 23. The transparent electrode layer 23 connects each epitaxial layer 213 and a second contact 13, thereby forming a light-emitting structure 2.

[0094] Figure 7 A schematic cross-sectional view of the structure after the formation of the third unit 43 is shown. See also some embodiments of this application. Figure 7 The third unit 43 is formed, which includes: each independent third unit 43 is formed according to the arrangement of only one LED table 21 in the 2×2 unit; wherein, the third unit 43 is a blue light conversion unit.

[0095] Figure 8 A schematic cross-sectional view of the structure after the formation of the metallic dielectric layer 31-a is shown. See also some embodiments of this application. Figure 8 Forming a metal dielectric layer 31-a includes: preparing the metal dielectric layer 31-a by sputtering.

[0096] Figure 9 A schematic cross-sectional view of the structure after the metal dielectric ring 31 is formed is shown. See also some embodiments of this application. Figure 9 The process of forming a metal dielectric ring 31 includes: removing part of the metal dielectric layer 31-a by vertical etching, so as to retain part of the metal dielectric layer 31-a on the sidewall of the blue light conversion unit to form multiple metal dielectric rings 31 respectively.

[0097] Figure 3 A top view is shown after the color conversion structure 4 is formed. Figure 4 A schematic cross-sectional view of the structure after the formation of color conversion structure 4 is shown. See also... Figures 3-4In some embodiments of this application, a color conversion structure 4 is formed, including: forming independent first units 41 in a 2×2 unit arrangement that leaves points only diagonally opposite to the LED platform 21 surrounded by the metal dielectric ring 31; forming second units 42 in the remaining areas not surrounded by the metal dielectric ring 31; wherein, the first unit 41 is a green light conversion unit and the second unit 42 is a red light conversion unit.

[0098] When the LED platform 21 does not emit blue light (such as UV LED), the first unit 41 is used to convert the light emitted by the corresponding LED platform 21 into green; the second unit 42 is used to convert the light emitted by the corresponding LED platform 21 into red; and the third unit 43 is used to convert the light emitted by the corresponding LED platform 21 into blue.

[0099] Figures 6-11 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the second embodiment is shown. See also Figures 6-11 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0100] The steps before forming the metal dielectric ring 31 in the second embodiment are the same as those in the first embodiment, and will not be repeated here.

[0101] Figure 10 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 11 A top view is shown after the color conversion structure 4 has been formed. See also Figures 10-11 , Figure 10 The cross-section shown is Figure 11 The CC cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: forming independent first units 41 in a 2×2 unit arrangement that leaves points only on the LED mesa 21 diagonally opposite to the LED mesa 21 surrounded by the metal dielectric ring 31; and forming second units 42 in the remaining areas not surrounded by the metal dielectric ring 31; wherein, the first unit 41 is a red light conversion unit and the second unit 42 is a green light conversion unit.

[0102] When the LED platform 21 does not emit blue light (such as UV LED), the first unit 41 is used to convert the light emitted by the corresponding LED platform 21 into red; the second unit 42 is used to convert the light emitted by the corresponding LED platform 21 into green; and the third unit 43 is used to convert the light emitted by the corresponding LED platform 21 into blue.

[0103] Figure 6 , Figures 12-16 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the third embodiment is shown. See also Figure 6, Figures 12-16 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0104] The steps for forming the light-emitting structure 2 in the third embodiment are the same as those in the first embodiment, and will not be repeated here.

[0105] Figure 12 A schematic cross-sectional view of the structure after the formation of the third unit 43 is shown. See also some embodiments of this application. Figure 12 The third unit 43 is formed by arranging each unit independently according to the arrangement of only one LED tabletop 21 in the 2×2 unit; wherein the third unit 43 is a transparent resin unit.

[0106] Figure 13 A schematic cross-sectional view of the structure after the formation of the metallic dielectric layer 31-a is shown. See also some embodiments of this application. Figure 13 Forming a metal dielectric layer 31-a includes: preparing the metal dielectric layer 31-a by sputtering.

[0107] Figure 14 A schematic cross-sectional view of the structure after the metal dielectric ring 31 is formed is shown. See also some embodiments of this application. Figure 14 The process of forming a metal dielectric ring 31 includes: removing a portion of the metal dielectric layer 31-a by vertical etching, so as to retain a portion of the metal dielectric layer 31-a on the sidewall of the transparent resin unit to form a plurality of metal dielectric rings 31.

[0108] Figure 15 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 16 A top view is shown after the color conversion structure 4 has been formed. See also Figures 15-16 , Figure 15 The cross-section shown is Figure 16 The DD cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, including: forming independent first units 41 in a 2×2 unit arrangement that leaves points only on the LED mesa 21 diagonally opposite to the LED mesa 21 surrounded by the metal dielectric ring 31; forming second units 42 in the remaining areas not surrounded by the metal dielectric ring 31; wherein, the first unit 41 is a green light conversion unit and the second unit 42 is a red light conversion unit.

[0109] When the LED platform 21 emits blue light (such as BlueLED), the first unit 41 is used to convert the light emitted by the corresponding LED platform 21 into green, the second unit 42 is used to convert the light emitted by the corresponding LED platform 21 into red, and the third unit 43 directly transmits the blue light emitted by the corresponding LED platform 21.

[0110] Figure 6 , Figures 12-14 , Figures 17-18 A schematic diagram illustrating different stages in the fabrication process of the Micro-LED microdisplay chip according to the fourth embodiment is shown. See also Figure 6 , Figures 12-14 , Figures 17-18 The fabrication method of the Micro-LED microdisplay chip in this embodiment will be described in detail.

[0111] The steps before forming the metal dielectric ring 31 in the fourth embodiment are the same as those in the third embodiment, and will not be repeated here.

[0112] Figure 17 A schematic diagram of the cross-sectional structure after the formation of color conversion structure 4 is shown. Figure 18 A top view is shown after the color conversion structure 4 has been formed. See also Figures 17-18 , Figure 17 The cross-section shown is Figure 18 The EE cross-section in the image. In some embodiments of this application, a color conversion structure 4 is formed, comprising: forming independent first units 41 in a 2×2 unit arrangement that leaves points only on the LED mesa 21 diagonally opposite to the LED mesa 21 surrounded by the metal dielectric ring 31; and forming second units 42 in the remaining areas not surrounded by the metal dielectric ring 31; wherein, the first unit 41 is a red light conversion unit and the second unit 42 is a green light conversion unit.

[0113] When the LED platform 21 emits blue light (such as BlueLED), the first unit 41 is used to convert the light emitted by the corresponding LED platform 21 into red, the second unit 42 is used to convert the light emitted by the corresponding LED platform 21 into green, and the third unit 43 directly transmits the blue light emitted by the corresponding LED platform 21.

[0114] The preparation method proposed in this application eliminates the preparation and processing of resin support materials, and can directly use the third unit 43 as the retention point, simplifying the preparation process, reducing process steps, and preventing the impact of complex processes on product yield.

[0115] The above description is merely a specific embodiment of this application. Under the guidance of the above teachings, those skilled in the art can make other improvements or modifications based on the above embodiments. Those skilled in the art should understand that the above specific description is only to better explain the purpose of this application, and the scope of protection of this application should be determined by the scope of the claims.

[0116] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.

Claims

1. A Micro-LED micro display chip, characterized in that, include: Driving substrate, light-emitting structure, grid network, color conversion structure; The light-emitting structure includes multiple LED mesa surfaces, which are arranged at intervals on the driving substrate, and each LED mesa surface is driven individually by the driving substrate. The grid network includes multiple metal dielectric rings, each of which is independently disposed on a portion of the LED platform, such that the portion of the LED platform is respectively surrounded by the metal dielectric rings. The color conversion structure includes a first unit, a second unit, and a third unit; the first unit independently covers the portion of the LED platform not surrounded by the metal dielectric ring, the second unit covers the remaining area not surrounded by the metal dielectric ring, and the third unit fills the metal dielectric ring; When a pixel unit includes at least one LED platform corresponding to the first unit, at least one LED platform corresponding to the second unit, and at least one LED platform corresponding to the third unit, the microdisplay chip can achieve full-color display.

2. The Micro-LED microdisplay chip of claim 1, wherein, The optical density of both the first unit and the second unit is not less than 2, and the wavelength of the light emitted through the third unit is shorter than the wavelength of the light emitted through the first unit and the wavelength of the light emitted through the second unit.

3. The Micro-LED microdisplay chip of claim 1, wherein, The arrangement of the multiple metal dielectric rings is such that only one LED platform in the 2×2 unit is surrounded by the metal dielectric rings; The arrangement of the first unit is as follows: in the 2×2 unit, only the LED platform diagonally opposite to the LED platform surrounded by the metal dielectric ring is covered by the first unit.

4. The Micro-LED microdisplay chip of claim 1, wherein, The lateral dimension of the LED platform ranges from 0.5 to 10 μm, the lateral inner dimension of the metal dielectric ring ranges from 1.0 to 10.5 μm, and the lateral inner dimension of the metal dielectric ring is larger than the lateral dimension of the LED platform. The wall thickness of the metal dielectric ring is 0.1 to 0.5 μm.

5. The Micro-LED microdisplay chip of claim 1, wherein, The thickness of the first unit, the second unit, and the third unit ranges from 2 to 5 μm.

6. The Micro-LED microdisplay chip of claim 1, wherein, The first unit converts the light emitted by the corresponding LED platform into green, the second unit converts the light emitted by the corresponding LED platform into red, and the third unit converts the light emitted by the corresponding LED platform into blue; Alternatively, the first unit converts the light emitted by the corresponding LED platform to red, the second unit converts the light emitted by the corresponding LED platform to green, and the third unit converts the light emitted by the corresponding LED platform to blue.

7. The Micro-LED microdisplay chip according to claim 6, characterized in that, The materials of the first unit, the second unit, and the third unit include quantum dots and / or phosphors.

8. The Micro-LED microdisplay chip according to claim 1, characterized in that, The first unit converts the light emitted by the corresponding LED platform into green, the second unit converts the light emitted by the corresponding LED platform into red, and the third unit transmits the blue light emitted by the corresponding LED platform. Alternatively, the first unit converts the light emitted by the corresponding LED platform into red, the second unit converts the light emitted by the corresponding LED platform into green, and the third unit transmits the blue light emitted by the corresponding LED platform.

9. The Micro-LED microdisplay chip of claim 8, wherein, The materials of the first unit and the second unit include quantum dots and / or phosphors, and the material of the third unit is a transparent resin. 10.A method for manufacturing a Micro-LED micro-display chip, characterized in that, Includes the following steps: Provide driving substrate; A light-emitting structure is formed, the light-emitting structure including a plurality of LED mesa, the plurality of LED mesa being arranged at intervals on the driving substrate, and each LED mesa being driven individually by the driving substrate; A grid network is formed, the grid network including multiple metal dielectric rings, each of the multiple metal dielectric rings being independently disposed on a portion of the LED mesa, so that the portion of the LED mesa is respectively surrounded by the metal dielectric rings; A color conversion structure is formed, the color conversion structure including a first unit, a second unit and a third unit; the first unit independently covers the portion of the LED platform not surrounded by the metal dielectric ring, the second unit covers the remaining area not surrounded by the metal dielectric ring, and the third unit fills the metal dielectric ring; When a pixel unit includes at least one LED platform corresponding to the first unit, at least one LED platform corresponding to the second unit, and at least one LED platform corresponding to the third unit, the microdisplay chip can achieve full-color display.

11. The method of claim 10, wherein the method further comprises: The formation of the raster network and the formation of the color conversion structure include: Multiple independent third units are formed on a portion of the LED platform; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching, so that a portion of the metal dielectric layer is retained on the sidewall of the third unit to form a plurality of metal dielectric rings; Each independent first unit is formed on the portion of the LED platform not surrounded by the metal dielectric ring; The second unit is formed in the remaining area not surrounded by the metal dielectric ring.

12. The method of claim 11, wherein the method further comprises: The formation of the raster network and the formation of the color conversion structure include: Each of the three units is formed by arranging only one LED tabletop point in the 2×2 unit; A metal dielectric layer is sputtered, and a portion of the metal dielectric layer is removed by vertical etching, so that a portion of the metal dielectric layer is retained on the sidewall of the third unit to form a plurality of metal dielectric rings; The first unit is formed by arranging the LED platform points diagonally opposite to the LED platform surrounded by the metal dielectric ring in a 2×2 unit; The second unit is formed in the remaining area not surrounded by the metal dielectric ring.

13. The method for fabricating a Micro-LED microdisplay chip according to claim 10, characterized in that, The formation of the light-emitting structure includes: A substrate is provided, on which an LED epitaxial material layer is disposed; Provide the driving substrate; The LED epitaxial material layer is bonded to the driving substrate; Peel off the substrate; Based on the MESA pattern designed by the patterned mask, the LED epitaxial material layer is etched to form multiple LED mesa surfaces; An electrical connection structure is formed such that each of the LED platforms is individually driven by the driving substrate.

14. The method for fabricating a Micro-LED microdisplay chip according to claim 13, characterized in that, The step of bonding the LED epitaxial material layer to the driving substrate includes: A first bonding layer is formed on the driving substrate; A second bonding layer is formed on the LED epitaxial material layer; The first bonding layer and the second bonding layer are bonded together using a bonding process.

Images