光电逻辑门器件及单像素成像系统
By constructing a heterojunction using lead-free double perovskite and organic polymer materials in optoelectronic logic gate devices, the switching of five logic gate functions was realized, solving the problems of complex structure and high power consumption in existing technologies. This technology is suitable for edge computing and wearable devices and improves imaging quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG INSTITUTE OF QUALITY SCIENCES
- Filing Date
- 2026-05-08
- Publication Date
- 2026-07-17
AI Technical Summary
Existing optoelectronic logic gate devices have complex structures, are difficult to fabricate, and are costly. They also require additional gate voltages or multi-wavelength light sources, resulting in high system complexity.
A type II heterojunction was constructed using lead-free double perovskite material and organic polymer material as the photoelectric response layer. By modulating the polarity of the extremely small bias voltage applied to both ends of the device and the illumination intensity of the incident light signal, five different photoelectric logic gate functions were realized in a single device structure.
It simplifies the device structure and highly integrates functions, reduces manufacturing costs, significantly reduces power consumption, has high logic switching efficiency, is suitable for edge computing and wearable devices, and improves imaging quality.
Smart Images
Figure CN122161260B_ABST