一种Zn / Ge共掺杂n型PbS基热电材料及其制备方法
By co-doping PbS0.5Se0.35Te0.15 matrix material with Zn/Ge, optimizing carrier concentration and reducing lattice thermal conductivity, the problem of insufficient thermoelectric performance of PbS-based materials is solved, realizing a high-performance near-room temperature thermoelectric material suitable for thermoelectric refrigeration devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Filing Date
- 2026-05-09
- Publication Date
- 2026-07-17
AI Technical Summary
Existing PbS-based thermoelectric materials have poor thermoelectric performance due to their high lattice thermal conductivity and low carrier concentration, which limits their application in near-room temperature thermoelectric refrigeration.
The PbS0.5Se0.35Te0.15 matrix material was modified by Zn/Ge bimetallic co-doping. Zn forms interstitial Zn ions in the interstices of the PbS lattice, providing additional free electrons. Ge doping increases the carrier concentration and conductivity while reducing the lattice thermal conductivity.
It achieves excellent thermoelectric performance in the near-room temperature range, with a room temperature thermoelectric figure of merit (ZT) of 0.54 and an average thermoelectric figure of merit (ZTave) of 0.80. It has a low-cost advantage and is suitable for large-scale production and application.
Smart Images
Figure CN122161334B_ABST