A silicon carbide paddle for use in a horizontal furnace tube

Abstract

The application discloses a silicon carbide paddle applied to a horizontal furnace tube. The silicon carbide paddle applied to the horizontal furnace tube comprises a silicon carbide supporting rod with a square section, a silicon carbide carrier area with a bowl-shaped section, a transition area of the silicon carbide supporting rod and the silicon carbide carrier, which is connected between the silicon carbide supporting rod and the silicon carbide carrier area and is smoothly transitioned from the square to the bowl-shaped, at least one long strip-shaped opening area arranged in the silicon carbide carrier area, and a high-purity silicon carbide coating covering the outer surface of the whole silicon carbide paddle. The application realizes the improvement of large-area surface contact into an accelerated guide groove structure to strip the fluid of free impurities, and cooperates with the high-purity silicon carbide coating as a physical barrier to reduce the negative influence of the precipitation of metal ions under the high-temperature process on the electrical performance of the semiconductor wafer, so as to improve the process yield and the device reliability.

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