一种应用于卧式炉管的碳化硅桨
By designing a convergent fluid acceleration channel and a high-purity silicon carbide coating on the silicon carbide propeller, the problem of metal impurities contaminating silicon wafers in the high-temperature diffusion process was solved, achieving efficient impurity removal and improved electrical performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI FENGZHENG CHUANGZHAN SEMICONDUCTOR CO LTD
- Filing Date
- 2026-05-09
- Publication Date
- 2026-07-17
AI Technical Summary
In existing silicon carbide substrates, metallic impurities are easily precipitated and contaminate the silicon wafer during high-temperature diffusion processes. Furthermore, the closed structure restricts airflow circulation, preventing impurities from being carried away and affecting the electrical performance of semiconductor chips.
Design a silicon carbide propeller, including a square support rod, a bowl-shaped substrate area and a transition area. The substrate area is provided with a convergent fluid acceleration guide groove and a high-purity silicon carbide coating. By improving the fluid dynamics, the diffusion channel of metal ions is cut off, and the diffusion of impurities is prevented by high-speed jet and physical barrier.
It effectively reduces the diffusion of metal ions into the silicon wafer, improves process yield and device reliability, and reduces the impact of impurities on electrical performance.
Smart Images
Figure CN122161390B_ABST