Reaction heat assisted semiconductor crystal polishing temperature-controlled carrier and method

Abstract

This invention discloses a temperature-controlled carrier plate and method for semiconductor crystal polishing based on reactive hot gas, belonging to the field of semiconductor manufacturing and ultra-precision machining technology. It includes a carrier plate body with a crystal groove on its lower surface and a gas flow channel inside; a gas guide ring with an inlet at its stationary end and an outlet at its rotating end, the outlet connected to the inlet of the carrier plate via a pipe; the gas guide ring being fixed to a machine tool spindle fixture via a threaded hole on a flange; and the rotating end of the gas guide ring being connected to the inlet of the gas flow channel; a reactive gas supply and temperature control unit, comprising an oxygen cylinder, a gas flow control valve, and a gas temperature controller connected in sequence; and a temperature monitoring system including a non-contact temperature sensor. This invention discloses a temperature-controlled carrier plate that integrates efficient and uniform thermal management functions to improve polishing performance.

Description

Technical Field

[0001] This invention relates to the fields of semiconductor manufacturing and ultra-precision machining technology, and in particular to a temperature-controlled carrier disk for semiconductor crystal polishing based on reactive hot gas assisted polishing. Background Technology

[0002] 4H-SiC, as a third-generation semiconductor material, has wide applications in high-temperature, high-frequency, and high-power devices. However, its extremely high hardness and chemical inertness make it one of the most difficult materials to process. In chemical mechanical polishing (CMP), the interface temperature is a key factor affecting the chemical reaction rate and mechanical removal efficiency of the polishing slurry, directly determining the final material removal rate (MRR) and surface quality.

[0003] Currently, the mainstream solution for temperature control in the polishing zone is to use an electrically heated carrier plate. For example, Chinese patent CN115837632A discloses a polishing system with adjustable processing zone temperature, which uses an electric heating tube in conjunction with a conductive slip ring for heating. Although this can achieve basic temperature control, using an electric heating tube as a point heat source results in a long heat conduction time and a slow heating rate. Secondly, uneven heat conduction paths can easily lead to temperature gradients on the carrier plate surface, resulting in poor uniformity. These thermal shortcomings directly cause uneven reactions on the wafer surface, affecting global planarization. At the same time, in order to overcome the chemical inertness of 4H-SiC, strong oxidants are generally added to the polishing slurry to soften its surface. However, this method has low reactant transfer efficiency, and the polishing slurry composition is complex and costly.

[0004] In other fields, such as chemical vapor deposition (CVD), there are solutions that use gases for temperature control. For example, Chinese patent CN119243121A discloses a wafer carrier disk that uses porous materials to diffuse gas, regulating the wafer temperature through uniformly diffused gas. However, this solution uses inert or non-reactive gases, its purpose being purely thermal management to avoid participation in chemical reactions; moreover, its core porous structure is easily clogged and contaminated by abrasive particles and polishing fluids in the polishing environment, making it unsuitable for CMP processes.

[0005] Therefore, there is an urgent need in this field for a solution that can integrate efficient and uniform thermal management functions and actively and directionally accelerate the chemical reaction on the 4H-SiC surface, thereby improving polishing performance. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, the technical problem to be solved by the present invention is to propose a temperature-controlled tray that integrates efficient and uniform thermal management functions to improve polishing performance.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] The present invention provides a temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted, comprising:

[0009] The disk body is a solid structure made of high thermal conductivity metal. The lower surface of the disk body is provided with a crystal groove for placing semiconductor crystals. The inside of the disk body is provided with a sealed gas flow channel. Gas outlets are provided around the crystal groove.

[0010] A gas guide slip ring is provided with an air inlet at its stationary end and an air outlet at its rotating end. The air outlet is connected to the air inlet of the loading plate through a pipe. The gas guide slip ring is fixed to the machine tool spindle fixture through a threaded hole on a flange. The rotating end of the gas guide slip ring is connected to the inlet of the gas flow channel for supplying gas to the high-speed rotating loading plate body.

[0011] The reactive gas supply and temperature control unit supplies reactive gas at a predetermined temperature and flow rate to the gas flow channel through the gas inlet. The reactive gas supply and temperature control unit includes an oxygen cylinder, a gas flow control valve, and a gas temperature controller connected in sequence. The gas temperature controller is connected to the gas inlet through a pipeline.

[0012] The temperature monitoring system includes a non-contact temperature sensor for real-time monitoring of the temperature of the carrier disk and semiconductor crystal, and maintains the preset polishing temperature by adjusting the supply of reaction gas and the temperature control unit.

[0013] A preferred embodiment of the present invention is that the reactive gas is oxygen or a mixture containing oxygen.

[0014] A preferred embodiment of the present invention is that the tray body is made of one of 304 stainless steel, aluminum alloy or high thermal conductivity nickel-based alloy.

[0015] A preferred embodiment of the present invention is that the gas flow channel is a coiled, serpentine, or grid-shaped sealed embedded channel, and is evenly distributed inside the body of the loading tray. The loading tray body is provided with an air inlet and an outlet that communicate with the gas flow channel.

[0016] A preferred embodiment of the present invention is that a heat insulation plate is provided between the upper part of the loading tray and the machine tool spindle fixture, and the heat insulation plate is made of mica material.

[0017] A preferred embodiment of the present invention is that the non-contact temperature sensor is an infrared thermometer, the detection end of the infrared thermometer is aligned with the surface of the loading plate, and the signal output end of the non-contact temperature sensor is connected to a gas temperature controller.

[0018] A preferred embodiment of the present invention is that an air valve is provided on the air inlet of the loading tray, and the air valve is connected to one end of the pipeline.

[0019] A preferred embodiment of the present invention is that a circular groove is provided on the outer wall of the tray body, and a rubber ring is embedded inside the circular groove to prevent gas leakage and the flow of processing and polishing liquid into the tray body.

[0020] A method for polishing semiconductor crystals on a temperature-controlled carrier disk, characterized by the following steps:

[0021] S1. Place the semiconductor crystal into the crystal groove of the carrier disk body, ensuring that the semiconductor crystal fits tightly against the inner wall of the crystal groove;

[0022] S2. Start the reaction gas supply and temperature control unit, heat the reaction gas to the target temperature, and then continuously introduce it into the gas flow channel of the carrier plate body through the gas guide slip ring.

[0023] S3. The temperature monitoring system monitors the temperature of the carrier plate and the semiconductor crystal in real time. By adjusting the heating power of the gas temperature controller and the gas flow rate of the gas flow control valve, the carrier plate and the semiconductor crystal are stabilized at the preset polishing temperature.

[0024] S4. Start the machine tool to rotate the tray body. At the same time, use a polishing pad to polish the upper surface of the semiconductor crystal. Simultaneously, the high-temperature reactive gas introduced reacts chemically with the processed surface of the semiconductor crystal to produce a softening layer. The softening layer works synergistically with the front mechanical polishing to promote efficient material removal.

[0025] S5. After polishing, shut off the reaction gas supply and temperature control unit. When the temperature monitoring system detects that the temperature of the semiconductor crystal has dropped to room temperature, shut off the gas valve and the machine tool, remove the semiconductor crystal, and perform roughness and material removal rate testing.

[0026] The beneficial effects of this invention are as follows:

[0027] 1. This invention uses gas convection heat transfer, which effectively improves the heating rate compared to traditional electric heating methods. It can reach a stable temperature within 40 seconds, with a small temperature difference on the working surface and greatly improved temperature uniformity, ensuring that the reaction rate of each region of the semiconductor crystal is consistent.

[0028] 2. This invention accelerates material removal from both physical and chemical dimensions through the synergistic effect of thermal activation and directional supply of reactive gas, activates the chemical reaction on the semiconductor crystal processing surface to generate a softening layer, reduces mechanical removal resistance, and significantly improves the material removal rate compared to the traditional CMP process, proving the effectiveness of the "thermo-chemical synergy" effect.

[0029] 3. This invention, through its solid structure and closed flow channel design, can effectively resist the erosion of polishing slurry and the blockage of abrasive particles. It is suitable for harsh CMP process environments. The temperature and flow rate of the reaction gas can be flexibly adjusted to meet the polishing requirements of different types of semiconductor crystals, and it has strong process adaptability.

[0030] 4. This invention avoids local over-reaction or under-reaction by using a uniform temperature field and directional chemical reaction, which can reduce the surface roughness of semiconductor crystals to a lower level, significantly reduce surface defects, and achieve ultra-smooth surface processing. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of the tray body provided in a specific embodiment of the present invention;

[0032] Figure 2 This is a top view of the tray body provided in a specific embodiment of the present invention;

[0033] Figure 3 This is a side view of the tray body provided in a specific embodiment of the present invention;

[0034] Figure 4 This is a schematic diagram of the spindle fixture provided in a specific embodiment of the present invention;

[0035] Figure 5 This is a 10s temperature difference diagram of the semiconductor crystal surface provided in a specific embodiment of the present invention;

[0036] Figure 6 This is a 20s temperature difference diagram of the semiconductor crystal surface provided in a specific embodiment of the present invention;

[0037] Figure 7 This is a 30s temperature difference diagram of the semiconductor crystal surface provided in a specific embodiment of the present invention;

[0038] Figure 8 This is a 40s temperature difference diagram of the semiconductor crystal surface provided in a specific embodiment of the present invention;

[0039] Figure 9 This is a 10s temperature difference diagram of the surface of the tray body provided in a specific embodiment of the present invention;

[0040] Figure 10 This is a 20s temperature difference diagram of the surface of the tray body provided in a specific embodiment of the present invention;

[0041] Figure 11 This is a 30s temperature difference diagram of the surface of the tray body provided in a specific embodiment of the present invention;

[0042] Figure 12 This is a 40s temperature difference diagram of the surface of the tray body provided in a specific embodiment of the present invention;

[0043] Figure 13 This is a schematic diagram of the surface roughness of the semiconductor crystal after processing, provided in a specific embodiment of the present invention;

[0044] Figure 14 This is a schematic diagram of the removal rate of semiconductor crystal material after processing provided in a specific embodiment of the present invention;

[0045] Figure 15 This is a surface morphology diagram of a semiconductor crystal before processing, provided in a specific embodiment of the present invention;

[0046] Figure 16 This is a semiconductor crystal surface morphology diagram after conventional CMP polishing provided in a specific embodiment of the present invention;

[0047] Figure 17 This is a surface morphology diagram of a semiconductor crystal after hot gas-assisted polishing, provided in a specific embodiment of the present invention.

[0048] The attached diagram lists the components represented by each number as follows:

[0049] 1. Oxygen cylinder; 2. Gas flow control valve; 3. Gas temperature controller; 4. Gas inlet; 5. Gas guide slip ring; 6. Threaded hole of moving slip ring; 7. Heat insulation plate; 8. Loading tray body; 9. Semiconductor crystal; 10. Gas valve; 11. Gas outlet; 12. Non-contact temperature sensor; 13. Loading tray gas inlet; 14. Pipe; 15. Spindle clamp; 16. Crystal groove; 17. Rubber ring. Detailed Implementation

[0050] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0051] Example 1

[0052] Reference Appendix Figures 1-5 The reactive hot gas-assisted semiconductor crystal polishing temperature control carrier includes a carrier body 8, which is a solid structure made of high thermal conductivity metal. The lower surface of the carrier body 8 is provided with a crystal groove 16 for placing a semiconductor crystal 9. Its shape and size match the semiconductor crystal 9 to be polished, and it is used to position and support the semiconductor crystal 9 wafer. The carrier body 8 is provided with a sealed gas flow channel inside, and gas outlets are provided around the crystal groove 16.

[0053] The air guide slip ring 5 has an air inlet 4 at its stationary end and an air outlet 11 at its rotating end. The air outlet 11 is connected to the air inlet 13 of the loading plate through a pipe 14. The air guide slip ring 5 is fixed to the machine tool spindle clamp 15 through the threaded hole 6 of the moving slip ring on the flange, thereby achieving synchronous rotation with the spindle. The rotating end of the air guide slip ring 5 is connected to the inlet of the gas flow channel for supplying gas to the high-speed rotating loading plate body 8.

[0054] A reaction gas supply and temperature control unit is used to provide reactive gas at a predetermined temperature and flow rate. The unit supplies reactive gas at a predetermined temperature and flow rate to the gas flow channel through the inlet 4. The unit includes an oxygen cylinder 1, a gas flow control valve 2, and a gas temperature controller 3 connected in sequence. The oxygen cylinder 1 provides high-purity oxygen as the reaction gas source. The gas flow control valve 2 is used to precisely regulate the oxygen flow rate. The gas temperature controller 3 is used to heat and stabilize the oxygen at a preset polishing temperature. The gas temperature controller 3 is connected to the inlet 4 through a pipe 14.

[0055] The temperature monitoring system includes a non-contact temperature sensor 12, which is used to monitor the temperature of the tray body 8 in real time and maintain the preset polishing temperature by adjusting the supply of reaction gas and the temperature control unit.

[0056] The carrier disk body 8 is a solid structure with enclosed gas flow channels inside. This design ensures structural strength and compatibility with traditional processing methods, while avoiding the applicability issues of porous materials in polishing environments. It also solves the problem of uneven heat conduction in traditional ceramic carrier disks, achieving uniform heating of the semiconductor crystal 9. High-temperature reactive gas is continuously introduced into the interior of the high-speed rotating carrier disk body 8 through the gas guide slip ring 5. As the gas flows within the gas channels, it efficiently and uniformly transfers heat to the carrier disk body 8 and the semiconductor crystal 9 through convection, achieving rapid and uniform heating. At the same time, the heat greatly activates the chemical reaction (such as oxidation reaction) between the reactive gas and the processed surface of the semiconductor crystal 9, generating a layer on the processed surface of the semiconductor crystal 9 that is easily removed by mechanical action. When the polishing pad grinds the front side of the semiconductor crystal 9, this softened layer is efficiently removed, exposing a new 4H-SiC surface for further reaction, forming a highly efficient cycle of "thermal-assisted chemistry and chemically promoted removal." Through the directional and efficient "micro-reaction of the processing surface" and the synergistic effect of mechanical polishing on the front side, the material removal rate is significantly improved. The stationary-rotating end separation design of the gas guide slip ring 5 overcomes the problem of stable gas supply under high-speed rotation, ensuring the continuous action of the reactive gas. The reactive gas supply, temperature control unit, and temperature monitoring system form a closed-loop control, achieving precise control of the polishing temperature and avoiding thermal damage to the semiconductor crystal 9. Through a multi-component collaborative architecture, the three core problems of temperature control, gas supply, and real-time monitoring are solved simultaneously, providing a hardware foundation for reactive hot gas-assisted polishing.

[0057] As one possible implementation of this solution, preferably, the reactive gas is oxygen or a mixture containing oxygen.

[0058] Oxygen, as a reactive gas, can react with the surfaces of semiconductor crystals such as silicon and silicon carbide to form oxides. The softening layer, with a hardness lower than the substrate material, significantly reduces the cutting resistance during mechanical polishing. At the same time, the oxide layer has good chemical stability, avoiding secondary contamination, optimizing reaction efficiency and softening layer quality, and ensuring high efficiency of synergistic polishing.

[0059] As one possible implementation of this solution, preferably, the tray body 8 is made of one of 304 stainless steel, aluminum alloy or high thermal conductivity nickel-based alloy.

[0060] The selected materials have a thermal conductivity much higher than that of traditional ceramics, ensuring that heat from the gas flow channel is quickly transferred to the semiconductor crystal. 9. 304 stainless steel has both corrosion resistance and mechanical strength, aluminum alloy is lightweight and easy to rotate at high speed, and nickel-based alloy is resistant to high temperature (suitable for high-temperature polishing scenarios), adapting to different polishing temperature requirements and working conditions, ensuring the versatility and service life of the carrier plate. The metal material has excellent processing performance, making it easy to manufacture complex flow channel structures and solving the problem of difficult processing of ceramic carrier flow channels.

[0061] As a possible implementation of this solution, preferably, the gas flow channel is a coiled, serpentine, or grid-shaped sealed embedded channel, and is evenly distributed inside the tray body 8. The tray body 8 is provided with an air inlet and an air outlet that communicate with the gas flow channel. The outer wall of the tray body 8 is provided with a circular groove, and a rubber ring 17 is embedded inside the circular groove to prevent gas leakage and the flow of processing and polishing liquid into the tray body 8.

[0062] The uniformly distributed flow channel design ensures a uniform temperature field in the carrier disk body 8, preventing local overheating or insufficient temperature in the semiconductor crystal 9. The coiled / serpentine / grid flow channels extend the gas residence time, improve heat exchange efficiency, and reduce gas consumption. The closed flow channel structure and the overfitting rubber ring 17 prevent gas leakage, ensuring that the reactive gas acts on the processing surface of the semiconductor crystal 9 in a concentrated manner, avoiding waste and environmental interference.

[0063] As a possible implementation of this solution, preferably, a heat insulation plate 7 is provided between the upper part of the loading tray body 8 and the machine tool spindle clamp 15, and the heat insulation plate 7 is made of mica material.

[0064] The mica plate has a low thermal conductivity, which effectively blocks the heat of the tray body 8 from being transferred to the machine tool spindle, preventing the spindle bearing from aging due to high temperature and extending the service life of the equipment. The heat insulation plate 7 also prevents the heat of the spindle from being transferred back to the tray body 8, thus avoiding affecting the stability of the polishing temperature. The mica plate is resistant to high temperature and has high mechanical strength, making it suitable for high-temperature polishing processes.

[0065] As a possible implementation of this solution, preferably, the non-contact temperature sensor 12 is an infrared thermometer, the detection end of the infrared thermometer is aligned with the surface of the tray body 8, and the signal output end of the non-contact temperature sensor 12 is connected to the gas temperature controller 3.

[0066] The infrared thermometer achieves non-contact temperature measurement, avoiding interference from contact sensors on high-speed rotating parts and ensuring safe operation of the equipment. The detection end is directly aligned with the surface of the semiconductor crystal 9, with a temperature measurement error of ≤0.5℃. This solves the lag problem of traditional indirect temperature measurement (measuring the temperature of the loading disk body 8). The signal output end is directly connected to the temperature controller, achieving fast closed-loop control with a temperature response time of ≤0.5s and improving temperature stability.

[0067] As a possible implementation of this solution, preferably, an air valve 10 is provided on the air inlet 13 of the loading tray, and the air valve 10 is connected to one end of the pipe 14.

[0068] An air valve 10 is installed at the air inlet 13 of the loading tray, which can realize the rapid opening and closing of the gas flow channel and the pressure regulation, facilitate the gas preheating before polishing and the pressure relief after polishing. At the same time, it can quickly cut off the gas source in case of equipment failure, improve operational safety, and enhance both operational convenience and equipment safety.

[0069] Example 2

[0070] Reference Appendix Figures 5-17 A method for polishing semiconductor crystals on a temperature-controlled carrier disk, characterized by the following steps:

[0071] S1. Place the semiconductor crystal 9 into the crystal groove 16 of the carrier disk body 8, ensuring that the semiconductor crystal 9 is in close contact with the inner wall of the crystal groove 16;

[0072] S2. Open the gas valve 10, and oxygen cylinder 1 releases oxygen. After the oxygen is adjusted to a suitable flow rate by the flow control valve 2, it is heated to the target temperature by the gas temperature controller 3. The heated oxygen enters the gas inlet 4 at the stationary end of the gas guide slip ring 5 through the pipe 14, and then enters the cargo tray body 8 through the rotating end outlet 11, the pipe 14, and the cargo tray inlet 13. Finally, it continues to pass through the gas flow channel.

[0073] S3, an infrared thermometer monitors the surface temperature of semiconductor crystal 9 in real time, combined with the attached... Figures 5-8 It can be seen that the surface temperature difference of semiconductor crystal 9 is 0.3℃ at 10S, 0.35℃ at 20S, 0.4℃ at 30S, and 0.45℃ at 40S, all ≤±0.5℃. If the temperature deviates, the heating power of gas temperature controller 3 and the gas flow rate of gas flow control valve 2 are adjusted to stabilize the carrier disk body 8 and semiconductor crystal 9 at the preset polishing temperature. Figures 9-12 It can be seen that the temperature fluctuation of the disk body 8 is stable, which proves that the heat transfer in the gas flow channel is uniform.

[0074] S4. Start the machine tool to rotate the tray body 8. At the same time, use a polishing pad to polish the upper surface of the semiconductor crystal 9. Simultaneously, the high-temperature oxygen introduced reacts chemically with the processed surface of the semiconductor crystal 9 to generate... The softening layer works in conjunction with the front mechanical polishing to promote efficient material removal.

[0075] S5. After polishing, turn off the gas temperature controller 3 and keep the gas flow control valve 2 to supply room temperature oxygen. When the infrared thermometer detects that the temperature of the semiconductor crystal 9 has dropped to room temperature, turn off the gas valve 10 and the machine tool, remove the semiconductor crystal 9, and perform roughness and material removal rate tests.

[0076] The clamping method of the semiconductor crystal 9 and the crystal groove 16 in close contact ensures unobstructed heat conduction path and avoids temperature unevenness caused by poor local heat conduction. The preheating stage allows the temperature of the semiconductor crystal 9 to reach the preset value in advance, shortening the temperature stabilization time in the early stage of polishing. Temperature control and polishing are carried out simultaneously to compensate for temperature fluctuations caused by polishing friction heat in real time. The process design of generating a softening layer with reactive hot gas and mechanical polishing in synergy improves polishing efficiency while reducing crystal surface roughness, thus solving the contradiction between efficiency and quality in traditional mechanical polishing.

[0077] As attached Figures 5-12Simulation results show that, after adopting the reactive thermo-oxidation assisted scheme of the present invention, the carrier disk 8 and the semiconductor crystal 9 can reach a stable temperature within about 40 seconds, and the heating rate is improved compared with the traditional electric heating scheme; at the same time, the temperature difference on the surface of the semiconductor crystal 9 can be stabilized at a low level, and the temperature uniformity is improved, thereby enabling a more uniform reaction on the surface of the semiconductor crystal 9; as shown in the attached figure. Figure 13 As shown, within the same polishing time, the surface roughness of the wafer polished by the gas-assisted heating of the present invention exhibits a stable and rapid decreasing trend, and is significantly lower than the level achievable by the traditional CMP polishing process.

[0078] like Figure 14 As shown, the gas-assisted heating polishing method of the present invention has a material removal rate (MRR) that is significantly higher than that of traditional CMP polishing, and can be further improved with process optimization; as shown in the attached figure. Figures 15-17 As shown, the surface morphology comparison of AFM clearly shows that the original processed surface has obvious scratches and undulations; after traditional CMP polishing, the surface morphology is improved, but some micro-defects still remain; while after gas-assisted heating polishing of the present invention, the surface becomes flatter and smoother, and the micro-undulations are effectively removed.

[0079] In summary, combined with the appendix Figures 5-17 It is evident that this invention not only solves the technical bottleneck of thermal management, but also significantly surpasses traditional technologies in two core indicators—polishing efficiency (MRR) and surface quality (roughness and flatness)—by introducing reactive thermal oxygen.

[0080] This invention has been described through preferred embodiments. Those skilled in the art will understand that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of the invention. This invention is not limited to the specific embodiments disclosed herein; other embodiments falling within the scope of the claims are also within the protection scope of this invention.

Claims

1. A temperature-controlled carrier disk for reactive hot gas-assisted semiconductor crystal polishing, characterized in that: include The disk body (8) is a solid structure made of high thermal conductivity metal. The lower surface of the disk body (8) is provided with a crystal groove (16) for placing semiconductor crystals (9). The disk body (8) is provided with a sealed gas flow channel inside. The crystal groove (16) is provided with gas outlets around its perimeter. The air guide slip ring (5) has an air inlet (4) at its stationary end and an air outlet (11) at its rotating end. The air outlet (11) is connected to the air inlet (13) of the loading plate through a pipe (14). The air guide slip ring (5) is fixed to the machine tool spindle fixture (15) through the threaded hole (6) of the moving slip ring on the flange. The rotating end of the air guide slip ring (5) is connected to the inlet of the gas flow channel and is used to deliver gas to the high-speed rotating loading plate body (8). The reactive gas supply and temperature control unit supplies reactive gas at a predetermined temperature and flow rate to the gas flow channel through the gas inlet (4). The reactive gas supply and temperature control unit includes an oxygen cylinder (1), a gas flow control valve (2), and a gas temperature controller (3) connected in sequence. The gas temperature controller (3) is connected to the gas inlet (4) through a pipe (14). The temperature monitoring system includes a non-contact temperature sensor (12) for real-time monitoring of the temperature of the tray body (8) and for maintaining the preset polishing temperature by adjusting the supply of reaction gas and the temperature control unit.

2. The temperature-controlled carrier disk for reactive hot gas-assisted semiconductor crystal polishing according to claim 1, characterized in that: The reactive gas is oxygen or a mixture of gases containing oxygen.

3. The temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted according to claim 1, characterized in that: The tray body (8) is made of one of 304 stainless steel, aluminum alloy or high thermal conductivity nickel-based alloy.

4. The temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted according to claim 1, characterized in that: The gas flow channel is a coiled, serpentine or grid-shaped sealed embedded channel, and is evenly distributed inside the tray body (8). The tray body (8) is provided with an air inlet and an air outlet that communicate with the gas flow channel.

5. The temperature-controlled carrier disk for reactive hot gas-assisted semiconductor crystal polishing according to claim 1, characterized in that: A heat insulation plate (7) is provided between the upper part of the loading tray body (8) and the machine tool spindle clamp (15), and the heat insulation plate (7) is made of mica material.

6. The temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted by claim 1, characterized in that: The non-contact temperature sensor (12) is an infrared thermometer. The detection end of the infrared thermometer is aligned with the surface of the tray body (8). The signal output end of the non-contact temperature sensor (12) is connected to the gas temperature controller (3).

7. The temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted according to claim 1, characterized in that: An air valve (10) is provided on the air inlet (13) of the cargo tray, and the air valve (10) is connected to one end of the pipe (14).

8. The temperature-controlled carrier disk for polishing semiconductor crystals based on reactive hot gas assisted according to claim 1, characterized in that: The outer wall of the tray body (8) is provided with a circular groove, and a rubber ring (17) is embedded in the circular groove to prevent gas leakage and the flow of processing and polishing liquid into the tray body (8).

9. A method for polishing a semiconductor crystal on a temperature-controlled carrier disk as described in any one of claims 1-8, characterized in that: Includes the following steps: S1. Place the semiconductor crystal (9) into the crystal groove (16) of the carrier disk body (8) to ensure that the semiconductor crystal (9) is in close contact with the inner wall of the crystal groove (16); S2. Start the reaction gas supply and temperature control unit, heat the reaction gas to the target temperature, and then continuously introduce it into the gas flow channel of the carrier plate body (8) through the gas guide slip ring (5); S3. The temperature monitoring system monitors the temperature of the disk body (8) and the semiconductor crystal (9) in real time. By adjusting the heating power of the gas temperature controller (3) and the gas flow rate of the gas flow control valve (2), the disk body (8) and the semiconductor crystal (9) are stabilized at the preset polishing temperature. S4. Start the machine tool and rotate the tray body (8). At the same time, polish the upper surface of the semiconductor crystal (9) with a polishing pad. Meanwhile, the high-temperature reactive gas introduced reacts chemically with the processed surface of the semiconductor crystal (9) to produce a softening layer. The softening layer works synergistically with the front mechanical polishing to promote the efficient removal of materials. S5. After polishing, shut off the reaction gas supply and temperature control unit. When the temperature monitoring system detects that the temperature of the semiconductor crystal (9) has dropped to room temperature, shut off the gas valve (10) and the machine tool, remove the semiconductor crystal (9), and perform roughness and material removal rate detection.

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