A method for preparing titanium boride composite silicon carbide ceramic by reaction sintering, the ceramic prepared thereby and applications thereof
By preparing titanium boride composite silicon carbide ceramics through reaction sintering, the problems of impurity introduction and poor interfacial bonding in TiB2-SiC ceramics were solved, enabling the application of high-performance TiB2-SiC ceramics in ultra-high temperature extreme environments.
CN122167171APending Publication Date: 2026-06-09GUANGDONG UNIV OF TECH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGDONG UNIV OF TECH
- Filing Date
- 2026-05-11
- Publication Date
- 2026-06-09
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Figure CN122167171A_ABST
Abstract
The application belongs to the technical field of ceramic materials, and discloses a method for preparing titanium boride composite silicon carbide ceramic by reaction sintering, the ceramic prepared by the method and application of the ceramic. The method comprises the following operation steps: Ti3SiC2 powder and SiB6 powder with a molar ratio of 1:1 are mixed to obtain mixed powder, ball milling medium and solvent are added, and the ceramic precursor powder is obtained through mixing, ball milling, drying and sieving; the ceramic precursor powder is loaded into a graphite mold, heated to 1650-1950 DEG C, a pressure of 20-35 MPa is set, and discharge plasma sintering is carried out in an argon environment to prepare titanium boride composite silicon carbide ceramic. The high-entropy boride composite silicon carbide ceramic has a Vickers hardness of 18-25 GPa at 1200 DEG C high temperature, and a bending strength of 300-600 MPa, and is suitable for the field of super-high-temperature environment.
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