一种VCSEL芯片晶圆去胶方法及系统

By employing steps such as infiltration swelling, pressure-reducing phase change stripping, photochemical bond breaking, and gas-phase fluorination replacement, the problem of removing residual adhesive from VCSEL chip wafers in existing technologies has been solved, achieving efficient residual adhesive removal and improving device yield and reliability.

CN122178179BActive Publication Date: 2026-07-17HUAXIN SEMICON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUAXIN SEMICON TECH CO LTD
Filing Date
2026-05-12
Publication Date
2026-07-17

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Abstract

本发明涉及一种VCSEL芯片晶圆去胶方法及系统，涉及晶圆去胶技术领域，包括，对待去胶的VCSEL芯片晶圆进行渗透溶胀，得到溶胀胶体晶圆；基于所述溶胀胶体晶圆进行降压相变剥离，得到初剥离晶圆；通过可调谐紫外光源对所述初剥离晶圆进行光化学断键，得到断键残胶晶圆；基于所述断键残胶晶圆进行气相氟化置换，得到氟化残渣晶圆；对所述氟化残渣晶圆进行动量传递吹扫，得到游离残渣晶圆；基于所述游离残渣晶圆进行去离子水冲洗，得到无胶目标晶圆，解决了常规方法难以有效清除深亚微米图形结构底部及侧壁附着的交联态残胶，导致后续沉积或键合工艺出现界面污染或空洞，严重影响器件良率与可靠性的技术问题。
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