Multi-chip ring array vertical cavity surface emitting laser
CN122178181BActive Publication Date: 2026-07-21CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
- Filing Date
- 2026-05-13
- Publication Date
- 2026-07-21
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Figure CN122178181B_ABST
Abstract
The application relates to the field of semiconductor lasers, in particular to a multi-chip ring array vertical cavity surface emitting laser, which comprises a gain chip array, a beam-splitting axicon lens group, a beam-combining axicon lens group and an output coupling mirror which are coaxially arranged in sequence. The gain chip array comprises N (N>1) VECSEL gain chips which are arranged in the form of M (M>1) concentric circular rings; the beam-splitting axicon lens group comprises M beam-splitting axicon lenses; the beam-combining axicon lens group comprises M beam-combining axicon lenses; N laser beams first pass through the beam-splitting axicon lens group to generate M levels of Bessel beams, then pass through the beam-combining axicon lens group to combine into one resonant beam, and finally resonate in the coaxial resonant cavity formed by the output coupling mirror and the gain chip array to form output laser beams. The application adopts a modularized cascaded structure of axicon lenses, realizes the multi-ring parallel superposition of multi-chips, fully utilizes the radial spatial dimension and improves the chip integration density.
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