Silicon-based oled display screen, preparation method and ar device

Abstract

The application discloses a kind of silicon-based OLED display screens, including drive circuit substrate, first anode metal layer, second anode metal layer, first light-emitting structure layer being arranged in the side of first anode metal layer away from drive circuit substrate and second light-emitting structure layer being arranged in the side of second anode metal layer away from drive circuit substrate, first anode metal layer and second anode metal layer are located at the opposite sides of drive circuit substrate respectively.The silicon-based OLED display screen of the application can realize double-sided light emission, improve display effect;When applied to AR glasses, the silicon-based OLED screen is vertically placed in the middle, the image is transmitted to the left and right sides, respectively through the mirror into the polarization beam splitter, the polarization beam splitter reflects the light to the half-mirror, and the half-mirror returns the light to the eye, reducing system complexity.The application also discloses a preparation method of the silicon-based OLED display screen and an AR device.

Description

Technical Field

[0001] This invention belongs to the field of optical display technology. Specifically, this invention relates to a silicon-based OLED display screen, its preparation method, and an AR device. Background Technology

[0002] Micro OLED (Micro-Organic Light-Emitting Diode) displays have advantages such as small size, light weight, high contrast, fast response speed and low power consumption. In recent years, they have been widely used as near-eye displays in the field of augmented reality (AR).

[0003] AR glasses, taking the Birdbath structure as an example, have a roughly similar optical architecture as follows: Figure 7 As shown, it includes a dual-sided display screen, a prism, a polarizing beam splitter, and a semi-transparent, semi-reflective curved mirror. To display a stereoscopic image, two screens typically project different images, which are then combined into a three-dimensional image using the principle of binocular parallax. This approach increases the complexity of the optical system, makes the device bulky, and the dual-screen drive further increases power consumption, becoming a bottleneck restricting the development of thinner and lighter AR glasses.

[0004] Silicon-based OLEDs use monocrystalline silicon as a substrate, with CMOS driving circuitry integrated within the silicon. OLED light-emitting units are then fabricated on this CMOS substrate. Typically, the CMOS substrate of monocrystalline silicon is 500-1000µm thick and opaque. Therefore, silicon-based OLEDs can generally only be fabricated as top-emitting devices, unlike glass-based OLEDs which can be fabricated as bottom-emitting or bi-sided emitting screens. This limitation makes it difficult for a single silicon-based OLED screen to simultaneously output two independent images, forcing AR devices to still rely on a dual-screen architecture, indirectly offsetting the integration advantages of silicon-based OLEDs.

[0005] This invention provides a silicon-based OLED display, particularly concerning how to achieve bi-sided illumination to improve display performance. Summary of the Invention

[0006] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention provides a silicon-based OLED display screen, the purpose of which is to achieve double-sided light emission and improve display performance.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a silicon-based OLED display screen, comprising a driving circuit substrate, a first anode metal layer, a second anode metal layer, a first light-emitting structure layer disposed on the side of the first anode metal layer away from the driving circuit substrate, and a second light-emitting structure layer disposed on the side of the second anode metal layer away from the driving circuit substrate, wherein the first anode metal layer and the second anode metal layer are respectively located on opposite sides of the driving circuit substrate.

[0008] The driving circuit substrate includes a substrate and a pixel driving circuit layer disposed on the substrate, the pixel driving circuit layer including a plurality of transistors.

[0009] The plurality of transistors include a first source, a first drain, a first gate, a second source, a second drain, and a second gate. The pixel driving circuit layer further includes a first insulating layer and a second insulating layer. The first insulating layer, the first source, the first drain, the second source, and the second drain are disposed on one side of the substrate. The second insulating layer, the first gate, and the second gate are disposed on the side of the first insulating layer away from the substrate. The first anode metal layer is disposed on the side of the second insulating layer away from the substrate. The second anode metal layer is disposed on the other side of the substrate.

[0010] The pixel driving circuit layer further includes a first drain extension layer, which is in contact with the first drain and the first anode metal layer.

[0011] The pixel driving circuit layer further includes a second drain extension layer and a via conductive layer. The second drain extension layer is in contact with the second drain, and the via conductive layer is in contact with the second drain extension layer and the second anode metal layer. The via conductive layer passes through the substrate.

[0012] The first light-emitting structure layer includes a first light-emitting element, a first encapsulation layer, a first colored adhesive layer, and a first cover glass.

[0013] The second light-emitting structure layer includes a second light-emitting element, a second encapsulation layer, a second colored adhesive layer, and a second cover glass.

[0014] The substrate is a single-crystal silicon wafer.

[0015] The present invention also provides an AR device, including the aforementioned silicon-based OLED display.

[0016] This invention also provides a method for fabricating a silicon-based OLED display, comprising the following steps:

[0017] S1. Provide a driving circuit substrate;

[0018] S2. A first anode metal layer is formed on one side of the driving circuit substrate;

[0019] S3. A first light-emitting structure is formed on the side of the first anode metal layer away from the driving circuit substrate;

[0020] S4. A second anode metal layer is formed on the other side of the driving circuit substrate;

[0021] S5. A second light-emitting structure is formed on the side of the second anode metal layer away from the driving circuit substrate.

[0022] The silicon-based OLED display of the present invention can achieve double-sided light emission, thereby improving the display effect. When applied to AR glasses, the silicon-based OLED screen is placed vertically in the middle, and the image is transmitted to the left and right sides. The image enters the polarization beam splitter through the reflector, and the polarization beam splitter reflects the light to the semi-transparent and semi-reflective curved mirror. The curved mirror then returns the light to the human eye, reducing the system complexity. Attached Figure Description

[0023] This manual includes the following figures, which illustrate the following:

[0024] Figure 1 This is a schematic diagram of the silicon-based OLED display screen of the present invention;

[0025] Figure 2 This is a schematic diagram of the structure of the driving circuit substrate;

[0026] Figure 3 This is a schematic diagram of the structure after the first light-emitting structure layer has been fabricated;

[0027] Figure 4 This is a schematic diagram of the structure after the second anode metal layer has been prepared;

[0028] Figure 5 This is a schematic diagram of the structure after the second light-emitting structure layer has been prepared;

[0029] Figure 6 This is a schematic diagram of the AR glasses structure of the present invention;

[0030] Figure 7 This is a schematic diagram of the existing AR glasses structure;

[0031] The diagram is marked as follows:

[0032] 1. Substrate; 2. First anode metal layer; 3. Second anode metal layer; 4. First light-emitting structure layer; 5. Second light-emitting structure layer;

[0033] 6. First source; 7. First drain; 8. First gate; 9. Second source; 10. Second drain; 11. Second gate; 12. First insulating layer; 13. Second insulating layer; 14. First drain extension layer; 15. Second drain extension layer; 16. Via conductive layer; 17. Double-sided display screen; 18. Prism; 19. Polarizing beam splitter; 20. Semi-transparent and semi-reflective curved mirror; 21. Reflector; 22. Silicon-based OLED display screen. Detailed Implementation

[0034] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, in order to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and to facilitate its implementation.

[0035] It should be noted that in the following embodiments, the terms "first," "second," and "third" do not represent an absolute distinction in structure and / or function, nor do they represent the order of execution; they are merely for the convenience of description.

[0036] Firstly, such as Figure 1 As shown, an embodiment of the present invention provides a silicon-based OLED display screen, including a driving circuit substrate, a first anode metal layer 2, a second anode metal layer 3, a first light-emitting structure layer 4 disposed on the side of the first anode metal layer 2 away from the driving circuit substrate, and a second light-emitting structure layer 5 disposed on the side of the second anode metal layer 3 away from the driving circuit substrate. The first anode metal layer 2 and the second anode metal layer 3 are respectively located on opposite sides of the driving circuit substrate.

[0037] Specifically, such as Figure 1 As shown, in this embodiment of the invention, pixel circuits for both front-emitting and back-emitting modules are integrated within the driving circuit substrate. The pixel circuit of the front-emitting module is connected upwards to the pixel anode, and the pixel circuit of the back-emitting module, after thinning the CMOS substrate, is connected downwards to the back-emitting pixel anode via vias. These two pixel circuits correspond to the driving circuits for both sides of the light emission. When applied to AR glasses, the silicon-based OLED screen is vertically placed in the center, and the image is transmitted to the left and right sides, respectively, and enters the polarization beam splitter 19 through the reflector 21. The polarization beam splitter 19 then reflects the light to a semi-transparent curved mirror, which then returns the light to the human eye. The driving of the dual-sided display is integrated into a single CMOS layer, which saves cost and power consumption. Furthermore, when applied to AR glasses, compared to two separate screens, signal control and transmission are more convenient, reducing system complexity.

[0038] like Figure 1As shown, the driving circuit substrate includes a substrate 1 and a pixel driving circuit layer disposed on the substrate 1. The pixel driving circuit layer includes multiple transistors. The substrate 1 is a single-crystal silicon wafer, and the thickness of the substrate 1 is less than 10 μm. In this embodiment of the invention, the multiple transistors include a first source 6, a first drain 7, a first gate 8, a second source 9, a second drain 10, and a second gate 11. The pixel driving circuit layer also includes a first insulating layer 12 and a second insulating layer 13. The first insulating layer 12, the first source 6, the first drain 7, the second source 9, and the second drain 10 are disposed on one side of the substrate 1. The second insulating layer 13, the first gate 8, and the second gate 11 are disposed on the side of the first insulating layer 12 away from the substrate 1. The first anode metal layer 2 is disposed on the side of the second insulating layer 13 away from the substrate 1, and the second anode metal layer 3 is disposed on the other side of the substrate 1.

[0039] In embodiments of the present invention, such as Figure 1 As shown, the pixel driving circuit layer also includes a first drain extension layer 14. The first drain extension layer 14 is disposed on the side of the first insulating layer 12 away from the substrate 1. The first drain extension layer 14 is in contact with the first drain 7 and the first anode metal layer 2. The first drain extension layer 14 passes through a second insulating layer 13, which is located between the first insulating layer 12 and the first anode metal layer 2. The first insulating layer 12 and the second insulating layer 13 serve as insulation. The first source 6, the first drain 7, the first gate 8, and the first drain extension layer 14 are used for front-side light emission driving.

[0040] In embodiments of the present invention, such as Figure 1 As shown, the pixel driving circuit layer further includes a second drain extension layer 15 and a via conductive layer 16. The second drain extension layer 15 is disposed on the side of the first insulating layer 12 away from the substrate 1. The second insulating layer 13 covers the second drain extension layer. The second drain extension layer 15 is in contact with the second drain 10. The via conductive layer 16 is in contact with the second drain extension layer 15 and the second anode metal layer 3. The via conductive layer 16 passes through the substrate 1, and a via is provided on the substrate 1 to allow the via conductive layer 16 to pass through. The second source 9, the second drain 10, the second gate 11, and the second drain extension layer 15 are used for back-side light emission driving.

[0041] In this embodiment of the invention, the first light-emitting structure layer 4 includes a first light-emitting element, a first encapsulation layer, a first color adhesive layer, and a first cover glass, which are sequentially disposed. The first light-emitting element is disposed on the side of the first anode metal layer 2 away from the driving circuit substrate, the first encapsulation layer is disposed on the side of the first light-emitting element away from the driving circuit substrate, the first color adhesive layer is disposed on the side of the first encapsulation layer away from the driving circuit substrate, and the first cover glass is disposed on the side of the first color adhesive layer away from the driving circuit substrate. The first light-emitting element is an OLED light-emitting device.

[0042] In this embodiment of the invention, the second light-emitting structure layer 5 includes a second light-emitting element, a second encapsulation layer, a second color adhesive layer, and a second cover glass, which are sequentially disposed. The second light-emitting element is disposed on the side of the second anode metal layer 3 away from the driving circuit substrate, the second encapsulation layer is disposed on the side of the second light-emitting element away from the driving circuit substrate, the second color adhesive layer is disposed on the side of the second encapsulation layer away from the driving circuit substrate, and the second cover glass is disposed on the side of the second color adhesive layer away from the driving circuit substrate. The second light-emitting element is an OLED light-emitting device.

[0043] Secondly, embodiments of the present invention also provide a method for fabricating a silicon-based OLED display screen, comprising the following steps:

[0044] S1. Provide a driving circuit substrate;

[0045] S2. A first anode metal layer 2 is formed on one side of the driving circuit substrate;

[0046] S3. A first light-emitting structure is formed on the side of the first anode metal layer 2 away from the driving circuit substrate;

[0047] S4. On the other side of the driving circuit substrate, a second anode metal layer 3 is formed;

[0048] S5. A second light-emitting structure is formed on the side of the second anode metal layer 3 away from the driving circuit substrate.

[0049] In step S1 above, the driving circuit substrate includes a substrate 1, which is a single-crystal silicon wafer. A pixel driving circuit layer is formed by fabricating a CMOS driving circuit on the single-crystal silicon wafer, such as... Figure 2 As shown. The fabrication processes used in this step are all commonly used IC manufacturing processes.

[0050] In step S3 above, a first light-emitting structure is formed on the side of the first anode metal layer 2 away from the driving circuit substrate, such as... Figure 3 As shown. The first light-emitting structural layer 4 includes a first light-emitting element, a first encapsulation layer, a first colored adhesive layer, and a first cover glass, which are arranged sequentially.

[0051] In step S4 above, the substrate 1 is first thinned by mechanical polishing to approximately 30 μm, and then etched to less than 10 μm. Next, vias are etched into the substrate 1 at positions corresponding to the second drain extension layer 15, and a via conductive layer 16 is formed within these vias. Finally, a second anode metal layer 3 is formed on the other side of the thinned drive circuit substrate, and this second anode metal layer 3 contacts the via conductive layer 16. Figure 4 As shown.

[0052] In step S5 above, a second light-emitting structure is formed on the side of the second anode metal layer 3 away from the driving circuit substrate, such as... Figure 5 As shown. The second light-emitting structure layer 5 includes a second light-emitting element, a second encapsulation layer, a second colored adhesive layer, and a second cover glass, which are arranged sequentially.

[0053] Thirdly, such as Figure 6 As shown, this embodiment of the invention also provides an AR device, including a prism 18, a polarizing beam splitter 19, a semi-transparent and semi-reflective curved mirror 20, a reflector 21, and a silicon-based OLED display screen 22 with the above-described structure. The silicon-based OLED display screen 22 is disposed between two prisms 18, and the prisms 18 and the reflector 21 are arranged opposite to each other. The semi-transparent and semi-reflective curved mirror 20 is disposed between the reflector 21 and the polarizing beam splitter 19.

[0054] The silicon-based OLED display 22 is vertically placed between two prisms 18. The image of the silicon-based OLED display 22 is transmitted to the left and right prisms 18. The light from the prisms 18 enters the polarization beam splitter 19 through the reflector 21. The polarization beam splitter 19 then reflects the light to the semi-transparent and semi-reflective curved mirror 20. The semi-transparent and semi-reflective curved mirror 20 then returns the light to the human eye.

[0055] The silicon-based OLED display screen with the above structure and its fabrication method have the following advantages:

[0056] The driver for the dual-sided display is integrated into a single CMOS layer, which saves on cost and power consumption. When applied to AR glasses, compared to two separate screens, the image can be reflected downwards by the left and right reflectors 21, achieving the display effect of two screens. Signal control and transmission are also more convenient.

[0057] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution; or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.

Claims

1. A silicon-based OLED display, characterized in that, It includes a driving circuit substrate, a first anode metal layer, a second anode metal layer, a first light-emitting structure layer disposed on the side of the first anode metal layer away from the driving circuit substrate, and a second light-emitting structure layer disposed on the side of the second anode metal layer away from the driving circuit substrate, wherein the first anode metal layer and the second anode metal layer are located on opposite sides of the driving circuit substrate.

2. The silicon-based OLED display screen according to claim 1, characterized in that, The driving circuit substrate includes a substrate and a pixel driving circuit layer disposed on the substrate, the pixel driving circuit layer including a plurality of transistors.

3. The silicon-based OLED display screen according to claim 2, characterized in that, The plurality of transistors include a first source, a first drain, a first gate, a second source, a second drain, and a second gate. The pixel driving circuit layer further includes a first insulating layer and a second insulating layer. The first insulating layer, the first source, the first drain, the second source, and the second drain are disposed on one side of the substrate. The second insulating layer, the first gate, and the second gate are disposed on the side of the first insulating layer away from the substrate. The first anode metal layer is disposed on the side of the second insulating layer away from the substrate. The second anode metal layer is disposed on the other side of the substrate.

4. The silicon-based OLED display screen according to claim 3, characterized in that, The pixel driving circuit layer further includes a first drain extension layer, which is in contact with the first drain and the first anode metal layer.

5. The silicon-based OLED display screen according to claim 3, characterized in that, The pixel driving circuit layer further includes a second drain extension layer and a via conductive layer. The second drain extension layer is in contact with the second drain, and the via conductive layer is in contact with the second drain extension layer and the second anode metal layer. The via conductive layer passes through the substrate.

6. The silicon-based OLED display screen according to any one of claims 1 to 5, characterized in that, The first light-emitting structure layer includes a first light-emitting element, a first encapsulation layer, a first colored adhesive layer, and a first cover glass.

7. The silicon-based OLED display screen according to any one of claims 1 to 5, characterized in that, The second light-emitting structure layer includes a second light-emitting element, a second encapsulation layer, a second colored adhesive layer, and a second cover glass.

8. The silicon-based OLED display screen according to any one of claims 2 to 7, characterized in that, The substrate is a single-crystal silicon wafer.

9. An AR device, characterized in that, Including the silicon-based OLED display according to any one of claims 1 to 8.

10. The method for fabricating a silicon-based OLED display screen as described in any one of claims 1 to 8, characterized in that, Including the following steps: S1. Provide a driving circuit substrate; S2. A first anode metal layer is formed on one side of the driving circuit substrate; S3. A first light-emitting structure is formed on the side of the first anode metal layer away from the driving circuit substrate; S4. A second anode metal layer is formed on the other side of the driving circuit substrate; S5. A second light-emitting structure is formed on the side of the second anode metal layer away from the driving circuit substrate.

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