Ultrahigh penetration toughened single-silver low-e coated glass and preparation method thereof

Abstract

The application relates to the field of coated glass, and particularly discloses an ultrahigh-transmittance toughened single-silver Low-E coated glass and a preparation method thereof. The coated glass comprises a glass base layer, a first medium layer, a first barrier layer, an Ag functional layer, a second barrier layer and a second medium layer which are sequentially arranged, each layer has a specific layer thickness and composition, the preparation method comprises the following steps: glass base layer pretreatment, sputtering coating, Ne and Xe plasma bombardment before sputtering a specific layer, and toughening treatment, and each step has specific parameters. The application achieves the technical effect of preparing the toughened single-silver Low-E coated glass with ultrahigh transmittance and good performance.

Description

Technical Field

[0001] This application relates to the technical field of coated glass, and in particular to an ultra-high transparency tempered single-silver Low-E coated glass and its preparation method. Background Technology

[0002] As a building material, glass requires tempering to meet strength requirements during daily use. However, the high temperatures involved in tempering traditional coated glass can cause adverse effects such as oxidation and changes in crystal structure, leading to phenomena like film peeling and oxidation.

[0003] With the large-scale application of glass curtain walls in high-rise buildings, low-emissivity coated glass that meets energy-saving and environmental protection requirements is highly sought after. High-transmittance low-emissivity coated glass, on the other hand, retains the characteristic of ordinary glass having high transmittance of visible light, ensuring sufficient natural light inside the building.

[0004] However, existing high-transmittance tempered single-silver Low-E coated glass suffers from poor abrasion resistance, leading to significant processing difficulties. This results in quality issues such as film oxidation and surface scratches, causing the coated glass to be scrapped and increasing production costs. Existing temperable single-silver Low-E glass cannot simultaneously possess both high transmittance and processing resistance. Summary of the Invention

[0005] To address the aforementioned technical problems, this application provides an ultra-high transparency tempered single-silver Low-E coated glass and its preparation method.

[0006] In a first aspect, this application provides an ultra-high transparency tempered single silver Low-E coated glass, comprising a glass substrate, a first dielectric layer, a first barrier layer, an Ag functional layer, a second barrier layer, and a second dielectric layer arranged sequentially. The thickness of the first dielectric layer is 35-40nm, and it includes a Si3N4 layer, a TiO2 layer and a ZnO layer arranged in a thickness ratio of (20-25):(5-10):(5-10) from near to far on the side closest to the glass substrate. The thickness of the first barrier layer is 1-1.5 nm, and it includes a NiCr layer; The thickness of the Ag functional layer is 5-7 nm; The second barrier layer has a thickness of 6-8 nm and includes a NiCr layer and an AZO layer with a thickness ratio of 1:(4-5) arranged sequentially from near to far on the side closest to the Ag functional layer. The second dielectric layer has a thickness of 35-40 nm and includes a Si3N4 layer and a ZrO layer arranged in a thickness ratio of (29-32):(3-11) from near to far on the side closest to the second barrier layer.

[0007] Preferably, the thickness of the first dielectric layer is 38 nm, and it includes a Si3N4 layer, a TiO2 layer and a ZnO layer arranged in a thickness ratio of 23:6:9 from near to far on the side closest to the glass substrate.

[0008] Preferably, the thickness of the first barrier layer is 1.3 nm.

[0009] Preferably, the thickness of the second dielectric layer is 36 nm, and on the side closest to the second barrier layer, it includes a Si3N4 layer and a ZrO layer with a thickness ratio of 31:5 arranged sequentially from near to far.

[0010] By adopting the above technical solution, this application sequentially sets up a glass substrate, a first dielectric layer, a first barrier layer, an Ag functional layer, a second barrier layer, and a second dielectric layer. Each layer has a specific thickness and composition, enabling the single-pane transmittance of the coated glass to reach over 86% after tempering, with transmittance closer to that of ordinary float glass, combining high transmittance with good wear resistance. The first dielectric layer composed of Si3N4, TiO2, and ZnO layers, the second barrier layer composed of NiCr and AZO layers, and the second dielectric layer composed of Si3N4 and ZrO layers can improve the wear resistance of the film, reduce processing difficulty, reduce quality problems such as film oxidation and surface scratches during processing, and reduce production costs.

[0011] The first dielectric layer has a thickness of 35-40 nm and consists of three layers arranged sequentially from near to far: Si3N4, TiO2, and ZnO, located close to the glass substrate. The Si3N4 layer possesses good chemical stability and mechanical properties, enhancing the adhesion between the film and the glass substrate while providing some protection for subsequent layers. It typically exhibits a dense structure and is relatively hard. The TiO2 layer has a high refractive index, which can adjust the optical properties of the film and improve the glass transmittance. Its unique crystal structure provides some photocatalytic activity. The ZnO layer has good electrical conductivity and optical properties, further optimizing the film's performance. Its relatively loose structure facilitates gas diffusion. The thickness ratio of these three layers is (20-25):(5-10):(5-10). This specific thickness ratio was determined through extensive experimentation and research, ensuring optimal performance of the first dielectric layer. The Si3N4 layer adheres tightly to the glass substrate through methods such as physical vapor deposition. The TiO2 layer is deposited on top of the Si3N4 layer, forming a good bond with it. The ZnO layer is then deposited on top of the TiO2 layer, and the layers are tightly bonded together through interatomic interactions. This combination allows the first dielectric layer to not only enhance the adhesion between the film and the glass substrate but also to modulate the optical properties of the film, thereby improving the glass's transmittance.

[0012] The NiCr layer possesses excellent oxidation resistance and barrier properties, effectively preventing the Ag functional layer from being oxidized during tempering. Its relatively dense structure forms an effective barrier. This first barrier layer, positioned before the Ag functional layer, protects it from high-temperature oxidation during tempering, thus ensuring the performance stability of the Ag functional layer. Ag exhibits good electrical conductivity and low emissivity, making it a key layer for achieving low-emissivity functionality. It typically presents as a continuous thin film structure with high electron mobility.

[0013] The AZO layer possesses excellent electrical and optical properties, enabling the tuning of the film's electrical and optical performance. The NiCr layer is in close contact with the Ag functional layer, adhering to the Ag functional layer surface through methods such as physical vapor deposition. The AZO layer is deposited on top of the NiCr layer, forming a strong bond with it. This combination allows the second barrier layer to further optimize the film's performance while protecting the Ag functional layer.

[0014] The second dielectric layer has a thickness of 3540 nm and, on the side closest to the second barrier layer, includes a Si3N4 layer and a ZrO layer arranged sequentially from near to far. The Si3N4 layer again serves to protect and enhance the adhesion, while the ZrO layer, with its high refractive index and chemical stability, can further modulate the optical properties of the film. The Si3N4 layer is tightly bonded to the second barrier layer, and the ZrO layer is deposited on top of the Si3N4 layer. The thickness ratio of these two layers is (29-32):(3-11), and this specific thickness ratio allows the second dielectric layer to achieve optimal performance.

[0015] By employing this multi-layered film structure, each layer works in concert to leverage its respective advantages. With the glass substrate as the base, the first dielectric layer enhances adhesion and modulates optical properties; the first and second barrier layers protect the Ag functional layer from oxidation; the Ag functional layer achieves low-emissivity; and the second dielectric layer further optimizes optical performance. This structure effectively prevents oxidation and delamination of the coating during tempering, while ensuring high transmittance and good processability, representing a significant improvement over existing technologies.

[0016] Secondly, this application provides a method for preparing ultra-high transparency tempered single-silver Low-E coated glass, comprising the following steps: S1. Glass substrate pretreatment; S2. Sputtering coating: Before sputtering the first barrier layer and the second dielectric layer, inert gas plasma bombardment is performed. The inert gas plasma used includes Ne plasma and Xe plasma bombarded in sequence, with bombardment energies of 70-80eV and 180-220eV, and bombardment times of 4-6min and 10-12min, respectively. S3. Tempered finish.

[0017] Preferably, in S2, the bombardment energy of the Ne plasma is 75 eV and the bombardment time is 5 min; the bombardment energy of the Xe plasma is 200 eV and the bombardment time is 12 min.

[0018] Preferably, in S2, the power is 100W when bombarding the Ne plasma.

[0019] Preferably, in S2, the frequency of bombarding the Xe plasma is 1 kHz and the pulse duty cycle is 20%.

[0020] Preferably, in step S3, during the tempering process, the lower temperature is 670-700℃ and the upper temperature is 680-710℃.

[0021] Preferably, the lower temperature is 680°C and the upper temperature is 690°C.

[0022] By adopting the above technical solution, this application, based on the structure of glass substrate, first dielectric layer, first barrier layer, Ag functional layer, second barrier layer and second dielectric layer, performs Ne plasma and Xe plasma bombardment before sputtering the first barrier layer and second dielectric layer. This can improve the adhesion and density of the film layer, increase the migration rate of deposited atoms, reduce porosity from 5% to below 0.5%, reduce quality problems such as film oxidation and surface scratches, reduce processing difficulty, reduce scattering loss and surface roughness, thereby reducing surface haze and improving transmittance and color brightness. Therefore, the ultra-high transmittance tempered single silver Low-E coated glass of this application has both ultra-high transmittance and high wear resistance.

[0023] Ne plasma, with its small ionic radius, can finely clean and activate the glass substrate surface, removing minute impurities and oxide layers, and improving the adhesion between the film and the substrate. Xe plasma, with its larger ionic radius and higher energy, can further improve the structure and performance of the film, making it denser and more uniform. This application, through precise adjustment of the bombardment energy and time of Ne and Xe plasmas, and optimized setting of the tempering temperature, can better control the structure and performance of the film, making the coated glass more stable during tempering, reducing problems such as film oxidation and delamination, and further improving the glass's transmittance and processability.

[0024] In summary, this application has the following beneficial technical effects: 1. This application sequentially comprises a glass substrate, a first dielectric layer, a first barrier layer, an Ag functional layer, a second barrier layer, and a second dielectric layer, each with a specific thickness and composition. This enables the single-pane transmittance of the coated glass to reach over 86% after tempering, with transmittance closer to that of ordinary float glass, combining high transmittance with good wear resistance. The first dielectric layer, composed of Si3N4, TiO2, and ZnO layers, the second barrier layer, composed of NiCr and AZO layers, and the second dielectric layer, composed of Si3N4 and ZrO layers, can improve the wear resistance of the film, reduce processing difficulty, reduce quality problems such as film oxidation and surface scratches during processing, and lower production costs. 2. Based on the structure of glass substrate, first dielectric layer, first barrier layer, Ag functional layer, second barrier layer and second dielectric layer, this application bombards the first barrier layer and second dielectric layer with Ne plasma and Xe plasma in sequence before sputtering the first barrier layer and the second dielectric layer. This can improve the adhesion and density of the film layer, increase the migration rate of deposited atoms, reduce the porosity from 5% to below 0.5%, reduce quality problems such as film oxidation and surface scratches, reduce processing difficulty, reduce scattering loss and surface roughness, thereby reducing surface haze and improving transmittance and brightness. Therefore, the ultra-high transmittance tempered single silver Low-E coated glass of this application has both ultra-high transmittance and high wear resistance. Detailed Implementation

[0025] The present application will be further described in detail below with reference to embodiments and comparative examples.

[0026] A high-transparency tempered single-silver Low-E coated glass includes a glass substrate, a first dielectric layer, a first barrier layer, an Ag functional layer, a second barrier layer, and a second dielectric layer arranged sequentially. The thickness of the first dielectric layer is 35-40nm, and it includes a Si3N4 layer, a TiO2 layer and a ZnO layer arranged in a thickness ratio of (20-25):(5-10):(5-10) from near to far on the side closest to the glass substrate. The thickness of the first barrier layer is 1-1.5 nm, and it includes a NiCr layer; The thickness of the Ag functional layer is 5-7 nm; The second barrier layer has a thickness of 6-8 nm and includes a NiCr layer and an AZO layer with a thickness ratio of 1:(4-5) arranged sequentially from near to far on the side closest to the Ag functional layer. The second dielectric layer has a thickness of 35-40 nm and includes a Si3N4 layer and a ZrO layer arranged in a thickness ratio of (29-32):(3-11) from near to far on the side closest to the second barrier layer.

[0027] In a preferred embodiment of this application, the thickness of the first dielectric layer is 38 nm, and it includes a Si3N4 layer, a TiO2 layer and a ZnO layer arranged in a thickness ratio of 23:6:9 from near to far on the side closest to the glass substrate.

[0028] In a preferred embodiment of this application, the thickness of the first barrier layer is 1.3 nm.

[0029] In a preferred embodiment of this application, the second dielectric layer has a thickness of 36 nm and includes a Si3N4 layer and a ZrO layer with a thickness ratio of 31:5 arranged sequentially from near to far on the side closest to the second barrier layer.

[0030] A method for preparing ultra-high transparency tempered single-silver Low-E coated glass includes the following steps: S1. Glass substrate pretreatment; S2. Sputtering coating: Before sputtering the first barrier layer and the second dielectric layer, inert gas plasma bombardment is performed. The inert gas plasma used includes Ne plasma and Xe plasma bombarded in sequence, with bombardment energies of 70-80eV and 180-220eV, and bombardment times of 4-6min and 10-12min, respectively. S3. Tempered finish.

[0031] In a preferred embodiment of this application, in S2, the bombardment energy of the Ne plasma is 75 eV and the bombardment time is 5 min; the bombardment energy of the Xe plasma is 200 eV and the bombardment time is 12 min.

[0032] In a preferred embodiment of this application, in S2, the power is 100W when bombarding the Ne plasma.

[0033] In a preferred embodiment of this application, in S2, the frequency of bombarding the Xe plasma is 1 kHz and the pulse duty cycle is 20%.

[0034] In a preferred embodiment of this application, during the tempering process in step S3, the lower temperature is 670-700°C and the upper temperature is 680-710°C.

[0035] In a preferred embodiment of this application, the lower temperature is 680°C and the upper temperature is 690°C.

[0036] Examples 1-6 A method for preparing ultra-high transparency tempered single-silver Low-E coated glass includes the following steps: S1. Glass substrate pretreatment: The glass slide is ultrasonically cleaned sequentially with acetone, anhydrous ethanol and deionized water, and then the glass slide is grounded to obtain the pretreated glass substrate. S2. Sputtering coating: Sputtering was performed on a pure silicon-targeted glass substrate surface, while Ar and N2 were introduced at a volume ratio of 1:1.2. The target power was controlled at 35 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar yields a Si3N4 layer. Sputtering was performed using a pure titanium target on a Si3N4 layer, while simultaneously introducing Ar and O2 in a volume ratio of 3:1. The target power was controlled at 35 kW, and the sputtering gas pressure was 3 × 10⁻⁶. -3 mbar, to obtain a TiO2 layer. Sputtering was performed using a pure zinc-targeted TiO2 layer, while simultaneously introducing Ar and O2 at a volume ratio of 4:1. The target power was controlled at 35 kW, and the sputtering gas pressure was 3 × 10⁻⁶. -3 mbar, to obtain a ZnO layer. The ZnO layer was bombarded with Ne plasma at a power of 100 W, an energy of 75 eV, and a duration of 5 min, followed by Xe plasma bombardment at a frequency of 1 kHz, a pulse duty cycle of 20%, an energy of 200 eV, and a duration of 12 min. A NiCr layer was obtained by sputtering a ZnO layer using a nickel-chromium target (nickel-chromium weight ratio of 80:20) with a target power controlled at 12 kW. A pure silver-targeted NiCr layer was sputtered at a target power of 10 kW to obtain an Ag functional layer. A NiCr layer was obtained by sputtering an Ag functional layer using a nickel-chromium target (nickel-chromium weight ratio of 80:20) with a target power controlled at 15 kW. An AZO silicon-aluminum target (silicon-aluminum weight ratio of 90:10) was used to sputter a NiCr layer while simultaneously introducing Ar and O2 in a volume ratio of 2:1. The target power was controlled at 55 kW to obtain the AZO layer. The AZO layer was bombarded with Ne plasma at a power of 100 W, an energy of 75 eV, and a duration of 5 min, followed by Xe plasma bombardment at a frequency of 1 kHz, a pulse duty cycle of 20%, an energy of 200 eV, and a duration of 12 min. Sputtering was performed on the surface of the AZO layer using pure silicon as the target, while simultaneously introducing Ar and N2 at a volume ratio of 1:1.2. The target power was controlled at 35 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar yields a Si3N4 layer. Sputtering was performed on the surface of a Si3N4 layer using a pure zirconium target, while simultaneously introducing Ar and O2 in a volume ratio of 5:1. The target power was controlled at 45 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar, to obtain the ZrO layer; S3. Tempering treatment: The single-silver Low-E coated glass obtained in S2 is placed in a double-chamber strong convection horizontal tempering furnace for tempering. The lower temperature is 670℃ and the upper temperature is 680℃. The tempering time is 5 minutes to obtain ultra-high transparency tempered single-silver Low-E coated glass.

[0037] Table 1. Layer thickness (nm) of Examples 1-6

[0038] Example 7 A method for preparing ultra-high transparency tempered single-silver Low-E coated glass differs from Example 6 in that: in S3, the lower temperature is 680℃ and the upper temperature is 690℃, while the rest is the same as in Example 6.

[0039] Example 8 A method for preparing ultra-high transparency tempered single-silver Low-E coated glass differs from Example 6 in that: in S3, the lower temperature is 690℃ and the upper temperature is 700℃, while the rest is the same as in Example 6.

[0040] Example 9 A method for preparing ultra-high transparency tempered single-silver Low-E coated glass differs from Example 6 in that: in S3, the lower temperature is 700℃ and the upper temperature is 710℃, while the rest is the same as in Example 6.

[0041] Comparative Examples 1-3 The difference from Example 1 is that it includes the following steps: S1. Glass substrate pretreatment: The glass slide is ultrasonically cleaned sequentially with acetone, anhydrous ethanol and deionized water, and then the glass slide is grounded to obtain the pretreated glass substrate. S2. Sputtering coating: Sputtering was performed on a pure silicon-targeted glass substrate surface, while Ar and N2 were introduced at a volume ratio of 1:1.2. The target power was controlled at 35 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar yields a Si3N4 layer. Sputtering was performed using a pure titanium target on a Si3N4 layer, while simultaneously introducing Ar and O2 in a volume ratio of 3:1. The target power was controlled at 35 kW, and the sputtering gas pressure was 3 × 10⁻⁶. -3 mbar, to obtain a TiO2 layer. Sputtering was performed using a pure zinc-targeted TiO2 layer, while simultaneously introducing Ar and O2 at a volume ratio of 4:1. The target power was controlled at 35 kW, and the sputtering gas pressure was 3 × 10⁻⁶. -3 mbar, to obtain a ZnO layer. The ZnO layer was bombarded with Ne plasma at a power of 100 W, an energy of 75 eV, and a duration of 5 min, followed by Xe plasma bombardment at a frequency of 1 kHz, a pulse duty cycle of 20%, an energy of 200 eV, and a duration of 12 min. A NiCr layer was obtained by sputtering a ZnO layer using a nickel-chromium target (nickel-chromium weight ratio of 80:20) with a target power controlled at 12 kW. A pure silver-targeted NiCr layer was sputtered at a target power of 10 kW to obtain an Ag functional layer. A NiCr layer was obtained by sputtering an Ag functional layer using a nickel-chromium target (nickel-chromium weight ratio of 80:20) with a target power controlled at 15 kW. An AZO silicon-aluminum target (silicon-aluminum weight ratio of 90:10) was used to sputter a NiCr layer while simultaneously introducing Ar and O2 in a volume ratio of 2:1. The target power was controlled at 55 kW to obtain the AZO layer. The AZO layer was bombarded with Ne plasma at a power of 100 W, an energy of 75 eV, and a duration of 5 min, followed by Xe plasma bombardment at a frequency of 1 kHz, a pulse duty cycle of 20%, an energy of 200 eV, and a duration of 12 min. Sputtering was performed on the surface of the AZO layer using pure silicon as the target, while simultaneously introducing Ar and N2 at a volume ratio of 1:1.2. The target power was controlled at 35 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar yields a Si3N4 layer. Sputtering was performed on the surface of a Si3N4 layer using a pure zirconium target, while simultaneously introducing Ar and O2 in a volume ratio of 5:1. The target power was controlled at 45 kW, and the sputtering gas pressure was 4 × 10⁻⁶. -3 mbar, to obtain the ZrO layer; S3. Tempering treatment: The single-silver Low-E coated glass obtained in S2 is placed in a double-chamber strong convection horizontal tempering furnace for tempering. The lower temperature is 670℃ and the upper temperature is 680℃. The tempering time is 5 minutes to obtain ultra-high transparency tempered single-silver Low-E coated glass.

[0042] Table 2 Layer thickness (nm) of each layer in Example 1 and Comparative Examples 1-3

[0043] Comparative Example 4 The difference from Example 1 is that no inert gas plasma bombardment is performed before sputtering the first barrier layer and the second dielectric layer; otherwise, they are the same as in Example 1.

[0044] Comparative Example 5 The difference from Example 1 is that, before sputtering the first barrier layer and the second dielectric layer, only Ne plasma bombardment is performed with a power of 100W, a bombardment energy of 75eV, and a bombardment time of 5min. All other aspects are the same as in Example 1.

[0045] Comparative Example 6 The difference from Example 1 is that, before sputtering the first barrier layer and the second dielectric layer, only Xe plasma bombardment is performed at a frequency of 1 kHz, a pulse duty cycle of 20%, a bombardment energy of 200 eV, and a bombardment time of 12 min. All other aspects are the same as in Example 1.

[0046] Comparative Example 7 The difference from Example 1 is that before sputtering the first barrier layer and the second dielectric layer, Xe plasma bombardment is performed first at a frequency of 1 kHz, a pulse duty cycle of 20%, a bombardment energy of 200 eV, and a bombardment time of 12 min. Then Ne plasma bombardment is performed at a power of 100 W, a bombardment energy of 75 eV, and a bombardment time of 5 min. All other aspects are the same as in Example 1.

[0047] Performance testing The emissivity, surface color brightness, transmittance, and increase in haze during wear of the tempered single-silver Low-E coated glass obtained in the test examples and comparative examples were evaluated. The wear test was conducted using a linear abrasion tester with a load of 1 N / cm. 2 Use a lint-free cloth dipped in mud to abrade the surface, repeating this process 200 times.

[0048] Table 3 Performance Test Table

[0049] Data Analysis: As can be seen from Table 3, the emissivity of the ultra-high transmittance tempered single-silver Low-E coated glass obtained in Examples 1-6 of this application is 0.12-0.15%, the glass surface color brightness is 27.5-28.8, the transmittance is 86.4-88.3%, and the haze increase value is 0.63-0.78. It can be seen that the ultra-high transmittance tempered single-silver Low-E coated glass of this application has both high transmittance and good wear resistance. The first dielectric layer composed of Si3N4 layer, TiO2 layer and ZnO layer, the second barrier layer composed of NiCr layer and AZO layer, and the second dielectric layer composed of Si3N4 layer and ZrO layer can improve the wear resistance of the film, reduce the processing difficulty, reduce quality problems such as film oxidation and film surface scratches during processing, and reduce production costs.

[0050] In Examples 7-9, the tempering temperature was adjusted in this application. The results show that the various properties of the ultra-high transmittance tempered single silver Low-E coated glass of Example 7 were optimized. It can be seen that strictly controlling the tempering temperature can not only meet the strength requirements of glass tempering, but also avoid the adverse effects of high temperature on the film layer such as oxidation and crystal form change, prevent the film from peeling and oxidation, and at the same time help to improve the transmittance of the glass.

[0051] In Comparative Examples 1-3, this application adjusted the parameters of each layer. The results showed that all properties of the ultra-high transmittance tempered single-silver Low-E coated glass were reduced. This demonstrates that by setting up such a multi-layer film structure, each layer works in concert to leverage its respective advantages. With the glass substrate as the base, the first dielectric layer enhances adhesion and adjusts optical properties; the first and second barrier layers protect the Ag functional layer from oxidation; the Ag functional layer achieves low-emissivity; and the second dielectric layer further optimizes optical properties. This structure effectively avoids problems such as film oxidation and delamination during the tempering process of the coated glass, while ensuring high transmittance and good processability, representing a significant improvement and enhancement compared to existing technologies.

[0052] In Comparative Examples 4-7, this application adjusted the inert gas plasma bombardment process. The results showed that all properties of the ultra-high transmittance tempered single-silver Low-E coated glass were reduced. This demonstrates that by bombarding the first barrier layer and the second dielectric layer with Ne plasma sequentially, this application can improve the adhesion and density of the film, increase the migration rate of deposited atoms, reduce porosity, reduce quality problems such as film oxidation and surface scratches, lower processing difficulty, reduce scattering loss and surface roughness, thereby reducing surface haze and improving transmittance and color brightness. Therefore, the ultra-high transmittance tempered single-silver Low-E coated glass of this application possesses both ultra-high transmittance and high wear resistance. Ne plasma has a small ionic radius, enabling fine cleaning and activation of the glass substrate surface, removing minute impurities and oxide layers, and improving the adhesion between the film and the substrate. Xe plasma has a large ionic radius and high energy, further improving the structure and performance of the film, making the film denser and more uniform. This application, through precise adjustment of the bombardment energy and time of Ne and Xe plasmas, and optimization of the tempering temperature, can better control the structure and performance of the coating layer, making the coated glass more stable during the tempering process, reducing problems such as coating oxidation and delamination, and further improving the glass's transmittance and processability.

[0053] The embodiments described in this specific implementation are preferred embodiments of this application and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A high-transparency tempered single-silver Low-E coated glass, characterized in that, It includes a glass substrate, a first dielectric layer, a first barrier layer, an Ag functional layer, a second barrier layer, and a second dielectric layer arranged sequentially. The thickness of the first dielectric layer is 35-40nm, and it includes a Si3N4 layer, a TiO2 layer and a ZnO layer arranged in a thickness ratio of (20-25):(5-10):(5-10) from near to far on the side closest to the glass substrate. The thickness of the first barrier layer is 1-1.5 nm, and it includes a NiCr layer; The thickness of the Ag functional layer is 5-7 nm; The second barrier layer has a thickness of 6-8 nm and includes a NiCr layer and an AZO layer with a thickness ratio of 1:(4-5) arranged sequentially from near to far on the side closest to the Ag functional layer. The second dielectric layer has a thickness of 35-40 nm and includes a Si3N4 layer and a ZrO layer arranged in a thickness ratio of (29-32):(3-11) from near to far on the side closest to the second barrier layer.

2. The ultra-high transparency tempered single-silver Low-E coated glass according to claim 1, characterized in that, The first dielectric layer has a thickness of 38 nm and includes a Si3N4 layer, a TiO2 layer, and a ZnO layer arranged in a thickness ratio of 23:6:9 from near to far on the side closest to the glass substrate.

3. The ultra-high transparency tempered single-silver Low-E coated glass according to claim 2, characterized in that, The thickness of the first barrier layer is 1.3 nm.

4. The ultra-high transparency tempered single-silver Low-E coated glass according to claim 3, characterized in that, The second dielectric layer has a thickness of 36 nm and includes a Si3N4 layer and a ZrO layer with a thickness ratio of 31:5 arranged sequentially from near to far on the side closest to the second barrier layer.

5. A method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to any one of claims 1-4, characterized in that, Includes the following steps: S1. Glass substrate pretreatment; S2. Sputtering coating: Before sputtering the first barrier layer and the second dielectric layer, inert gas plasma bombardment is performed. The inert gas plasma used includes Ne plasma and Xe plasma bombarded in sequence, with bombardment energies of 70-80eV and 180-220eV, and bombardment times of 4-6min and 10-12min, respectively. S3. Tempered finish.

6. The method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to claim 5, characterized in that, In S2, the bombardment energy of the Ne plasma is 75 eV and the bombardment time is 5 min; the bombardment energy of the Xe plasma is 200 eV and the bombardment time is 12 min.

7. The method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to claim 6, characterized in that, In S2, the power is 100W when bombarding the Ne plasma.

8. The method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to claim 7, characterized in that, In S2, the frequency of bombarding the Xe plasma is 1 kHz and the pulse duty cycle is 20%.

9. The method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to claim 5, characterized in that, In S3, during the tempering process, the lower temperature is 670-700℃ and the upper temperature is 680-710℃.

10. The method for preparing ultra-high transparency tempered single-silver Low-E coated glass according to claim 9, characterized in that, The lower part temperature is 680℃, and the upper part temperature is 690℃.

Images