台阶型耦合锗电吸收调制器
By employing a stepped coupling structure and a gradient intrinsic region design in the germanium electroabsorption modulator, the problems of unreasonable silicon transition layer height design and fixed intrinsic region width are solved, achieving synergistic optimization of extinction ratio and insertion loss and bandwidth improvement.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ANHUI UNIV
- Filing Date
- 2026-05-18
- Publication Date
- 2026-07-17
AI Technical Summary
Existing germanium electroabsorption modulators suffer from poor silicon transition layer height design, making it difficult to optimize extinction ratio and insertion loss in a coordinated manner. Furthermore, the fixed intrinsic region width makes it impossible to simultaneously suppress space charge effects and maintain high bandwidth.
A stepped coupling structure is adopted. By connecting silicon tape structures to both ends of the germanium absorption layer, the height of the silicon tape structure is optimized so that the optical mode field gradually shifts to the germanium absorption layer. A gradient intrinsic region is set at the bottom of the germanium absorption layer, with its width gradually increasing along the light propagation direction. This enhances the electric field at the incident end, weakens the space charge effect, and reduces the junction capacitance at the output end.
It achieves a significant improvement in extinction ratio while maintaining low insertion loss, balancing high extinction ratio and high bandwidth, thus optimizing device performance.
Smart Images
Figure CN122194509B_ABST