A touch module, a touch panel and a touch device

Abstract

The application provides a touch module, a touch panel and a touch device. The touch module comprises a touch array and a magnetic field generator. The touch array comprises a plurality of magnetic sensitive semiconductors arranged in a matrix. The magnetic field generator is used for generating a magnetic field. The current conduction direction of the current in the magnetic sensitive semiconductor and the magnetic field direction of the magnetic field exist an angle. When the magnetic sensitive semiconductor generates a touch deformation, a sensing voltage is generated based on the change of the magnetic field, and the sensing voltage is output to a signal processor through a sensing voltage output end to generate a touch sensing signal. The touch sensing signal is directly generated by the magnetic sensitive semiconductor. The touch sampling rate is not affected by the scanning rate, and is not easily affected by the far-end load effect. Therefore, the efficiency is high.

Description

Technical Field

[0001] This invention relates to the field of touch technology, and in particular to a touch module, a touch panel, and a touch device. Background Technology

[0002] With the development of the times, the application of touch screens is becoming more and more widespread. Among them, users have put forward more demands for the functionality of touch screens, such as improving the energy consumption and sampling rate of touch screens.

[0003] In some implementations, touch screens typically use capacitive touch principles, which involve scanning the touch circuit at high frequency and analyzing the signal changes of the touch circuit to obtain the specific touch coordinates.

[0004] In the process of conceiving and implementing this application, the inventors discovered at least the following problems: Currently, under the existing capacitive touch principle, the driving circuit needs to perform high-frequency scanning of the touch circuit. Increasing the sampling rate requires increasing the scanning frequency. Moreover, the electrical characteristics of touch screens that do not use the capacitive touch principle have a remote load effect and low energy efficiency, which are technical problems that urgently need to be solved by those skilled in the art.

[0005] The preceding description is intended to provide general background information and does not necessarily constitute prior art. Summary of the Invention

[0006] To address the aforementioned technical problems, this application provides a touch module, a touch panel, and a touch device. Sampling does not require a driving circuit, thus increasing the scanning frequency and making it less susceptible to the effects of remote loads, thereby improving energy efficiency.

[0007] This application provides a touch module, including a touch array and a magnetic field generator; the touch array includes multiple magnetically sensitive semiconductors arranged in a matrix; the magnetic field generator is located on the side of the touch array and is used to generate a magnetic field parallel to the array surface of the touch array; wherein, each of the multiple magnetically sensitive semiconductors includes a current path terminal, a sensing voltage output terminal, and a ground terminal, and the current path terminals of two adjacent magnetically sensitive semiconductors in the same row are connected by a current path wiring; the current conduction direction in the magnetically sensitive semiconductor has an angle with the magnetic field direction; when the magnetically sensitive semiconductor generates touch deformation, it generates a sensing voltage based on the change in the magnetic field, and outputs the sensing voltage to the signal processor through the sensing voltage output terminal to generate a touch sensing signal.

[0008] Preferably, the current path wiring between two adjacent magnetically sensitive semiconductors in the same row is parallel to the row direction of the touch array; and / or the sensing voltage wiring between the sensing voltage output terminals of two adjacent magnetically sensitive semiconductors in the same column is parallel to the column direction of the touch array.

[0009] Preferably, the sensing voltage wiring is connected to the signal processor, and the sensing voltage output terminals of different magnetically sensitive semiconductors output the corresponding sensing voltage to the signal processor through different sensing voltage wiring; Alternatively, the magnetically sensitive semiconductors in the same column of the touch array can be connected in series to the sensing voltage wiring via the sensing voltage output terminal.

[0010] Preferably, the current path terminal of the magnetically sensitive semiconductor is continuously turned on, or the current path terminal of the magnetically sensitive semiconductor is turned on synchronously according to a preset sampling time interval.

[0011] Preferably, the touch module sequentially turns on the current path terminals of the magnetically sensitive semiconductor according to a preset row scanning interval time.

[0012] Preferably, the magnetically sensitive semiconductor is a cuboid, and the length and width of the cuboid are both less than or equal to 5 mm.

[0013] Preferably, the angle between the current conduction direction and the magnetic field direction is less than or equal to 90 degrees.

[0014] This application provides a touch panel, which includes at least one of the above-described touch modules.

[0015] Preferably, the touch panel further includes a first substrate and a second substrate, the first substrate and the second substrate are arranged in parallel, and the touch module is disposed in the sandwich between the first substrate and the second substrate; the first substrate is connected to the ground terminal of the magnetic sensitive semiconductor, the second substrate is connected to the current path terminal and the sensing voltage output terminal of the magnetic sensitive semiconductor, and the current path wiring and the sensing voltage wiring are disposed on the second substrate.

[0016] This application also provides a touch device, which includes the touch panel described above.

[0017] Preferably, the touch panel further includes a first substrate and a second substrate, the first substrate and the second substrate are arranged in parallel, and the touch module is disposed in the sandwich between the first substrate and the second substrate; the first substrate is provided with a grounding wire connected to the ground terminal of the magnetic sensitive semiconductor, and the second substrate is provided with a current path connecting wire connected to the current path terminal of the magnetic sensitive semiconductor, and a sensing voltage wiring wire connected to the sensing voltage output terminal.

[0018] This application provides a touch module, a touch panel, and a touch device. The touch module includes a touch array and a magnetic field generator. The touch array includes multiple magnetically sensitive semiconductors arranged in a matrix. The magnetic field generator is used to generate a magnetic field. There is an angle between the current conduction direction in the magnetically sensitive semiconductor and the magnetic field direction. When the magnetically sensitive semiconductor undergoes touch deformation, deflection, or offset, a sensing voltage is generated based on the change in the magnetic field. The sensing voltage is then output to a signal processor through the sensing voltage output terminal to generate a touch sensing signal. This application directly generates the touch sensing signal from the magnetically sensitive semiconductor. The touch sampling rate is not affected by the scanning rate and is not easily affected by the far-end load effect, thus achieving high energy efficiency. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0020] Figure 1 This is a schematic diagram of the connection relationship of the touch module provided in the first embodiment of this application.

[0021] Figure 2 This is a schematic diagram of the connection relationship of the touch module provided in the second embodiment of this application.

[0022] Figure 3 This is a schematic diagram of the touch principle of a touch module provided in an embodiment of this application.

[0023] Figure 4 This is a flowchart illustrating the execution of a touch module according to an embodiment of this application.

[0024] Figure 5 This is a schematic diagram of the connection relationship of the touch module provided in the third embodiment of this application.

[0025] Figure 6 This is a schematic diagram of the structure of a touch panel provided in an embodiment of this application.

[0026] The system includes a touch module 10, a touch array 101, a magnetic semiconductor 1011, a current path terminal 10111, a sensing voltage output terminal 10112, a ground terminal 10113, a magnetic field generator 102, a signal processor 20, a first substrate 30, and a second substrate 40.

[0027] The realization of the objectives, functional features, and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. The accompanying drawings have illustrated specific embodiments of this application, which will be described in more detail below. These drawings and textual descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concepts of this application to those skilled in the art through reference to specific embodiments. Detailed Implementation

[0028] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0029] It should be understood that although the terms first, second, third, etc., may be used in this document to describe various information, elements, units, or modules, these information, elements, units, or modules should not be limited to these terms. These terms are only used to distinguish information, elements, units, or modules of the same type from one another.

[0030] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Optionally, components, features, and elements with the same names in different embodiments of this application may have the same meaning or different meanings, the specific meaning of which needs to be determined by its interpretation in that specific embodiment or further in conjunction with the context of that specific embodiment.

[0031] It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.

[0032] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrative purposes and has no specific meaning in itself. Therefore, "module," "part," or "unit" may be used interchangeably.

[0033] This application provides a touch module 10, please refer to... Figure 1 , Figure 1This is a schematic diagram illustrating the connection relationship of the touch module provided in the first embodiment of this application. The touch module 10 includes a touch array 101 and a magnetic field generator 102. The touch array 101 includes a plurality of magnetically sensitive semiconductors 1011 arranged in a matrix. The magnetic field generator 102 is located on the side of the touch array 101 and is used to generate a magnetic field parallel to the array surface of the touch array 101. The side of the touch array 101 is the edge of the array of magnetically sensitive semiconductors 1011 arranged in a matrix, and the array surface is the plane formed by the row and column directions of the matrix-arranged magnetically sensitive semiconductors 1011. Each of the plurality of magnetically sensitive semiconductors 1011 includes a current path terminal 10111, a sensing voltage output terminal 10112, and a ground terminal 10113, and the current path terminals 10111 between two adjacent magnetically sensitive semiconductors 1011 in the same row are connected by a current path wiring. The current conduction direction in the magnetically sensitive semiconductor 1011 forms an angle with the magnetic field direction.

[0034] In one embodiment, the touch module 10 is provided with a current driver (not shown in the figure). The current driver is wired and connected to the current path to generate a constant current, so that a stable current is conducted inside the magnetic semiconductor 1011.

[0035] In one embodiment, at least two rows of magnetically sensitive semiconductors 1011 are connected to the same current path wiring. For example, the magnetically sensitive semiconductors 1011 in the first and second rows are both connected to the first current path wiring. Specifically, for example, the magnetically sensitive semiconductors 1011 in each row can be connected to the first current path wiring. In other embodiments, the magnetically sensitive semiconductors 1011 in the same row are connected in series to the same current path wiring through current path terminals 10111, and the magnetically sensitive semiconductors 1011 in different rows are connected in series to different current path wiring, for example... Figure 2 As shown, the magnetic semiconductors 1011 in the first row are all connected in series through the current path terminal 10111 and are all connected to the first current path. The magnetic semiconductors 1011 in the second row are all connected in series through the current path terminal 10111 and are all connected to the second current path.

[0036] Please refer to Figure 3 , Figure 3 This is a schematic diagram illustrating the touch principle of a touch module provided in an embodiment of this application. The magnetically sensitive semiconductor 1011 is a Hall element, when... Figure 3 When a current in the direction shown passes through the magnetically sensitive semiconductor 1011, the charge carriers inside it... Figure 3 Under the influence of the magnetic field in the direction shown, the magnetic field is deflected by the Lorentz force, causing positive charges to accumulate at the sensing voltage output terminal 10112 and negative charges to accumulate at the ground terminal 10113, thus forming a potential difference, which is the sensing voltage. Specifically, the specific relationship of the sensing voltage can be expressed as: U H =RH *I*B / d, among which, U H It is the sensed voltage, R H Here, I is the Hall coefficient of the magnetic semiconductor 1011, B is the magnetic flux density, and d is the thickness (also known as the height) of the magnetic semiconductor 1011. The specific relationship for the magnetic flux density is B = Φ / S * cosθ, where Φ is the magnetic flux, S is the area of ​​the magnetic semiconductor 1011, and θ is the angle between the magnetic semiconductor 1011 and the direction of the magnetic field. Based on the above relationship, the Hall coefficient R of the magnetic semiconductor 1011 can be obtained. H Under the condition that the thickness d is fixed and the current I is relatively stable, the sensing voltage U H The magnetic field strength changes with the magnetic flux density. Given a constant magnetic flux and area of ​​the magnetic semiconductor 1011, the magnetic flux density is only related to the angle between the magnetic semiconductor 1011 and the magnetic field direction. Therefore, changes in the angle between the magnetic semiconductor 1011 and the magnetic field direction will lead to changes in the sensing voltage. If the magnetic semiconductor 1011 undergoes touch deformation, the angle between it and the magnetic field direction changes, causing a change in the sensing voltage. Touch deformation includes deformation, deflection, or offset of the magnetic semiconductor 1011 due to pressure received from a first or second pressing direction. The relatively stable current I refers to the fact that when the magnetic semiconductor 1011 undergoes touch deformation, the current at the current path terminal 10111 is deflected by the Hall effect of the magnetic field, charging the magnetic semiconductor 1011 and generating the sensing voltage, causing a change in the current at the current path terminal 10111. The current I affects the sensing voltage U. H The effect of changes in magnetic flux density B on the sensed voltage U H The impact is relatively small. Therefore, the signal processor can identify the magnetic semiconductor 1011 that has been deformed by touch by comparing the sensing voltage of the magnetic semiconductor 1011 in the same row, or by comparing the sensing voltage of the magnetic semiconductor 1011 in other rows.

[0037] Specifically, when the magnetic semiconductor 1011 undergoes touch deformation, the current at the current path terminal 10111 of the other magnetic semiconductors 1011 in the same row changes synchronously, causing the sensing voltage of the other magnetic semiconductors 1011 in the same row to also change synchronously. However, the magnetic induction intensity of the magnetic semiconductor 1011 that has undergone touch deformation also changes, while the magnetic induction intensity of the other magnetic semiconductors 1011 in the same row does not change. Therefore, according to the above sensing voltage relationship, the sensing voltage change of the magnetic semiconductor 1011 that has undergone touch deformation is significantly greater than the sensing voltage change of the other magnetic semiconductors 1011 in the same row. The signal processor can identify the magnetic semiconductor 1011 that has undergone touch deformation among the magnetic semiconductors 1011 arranged in the same row after the current change by the sensing voltage difference between the magnetic semiconductors 1011 in the same row, thereby further improving the accuracy of identification.

[0038] Furthermore, the deformation, deflection, or offset caused by pressing during touch deformation has a linear relationship with the pressing force. Therefore, the pressing force also affects the voltage amplitude of the sensing voltage. The signal processor 20 can analyze the sensing voltage amplitude to obtain the magnitude of the pressing force and the pressing depth of the magnetic semiconductor 1011, and can obtain linear touch input to achieve linear touch control, meeting more demand scenarios. In one embodiment, the sensing voltage output terminals 10112 of different magnetic semiconductors 1011 output sensing voltages through different sensing voltage wiring. In other embodiments, the sensing voltage output terminals 10112 of at least two magnetic semiconductors 1011 can also output sensing voltages through the same sensing voltage wiring.

[0039] In one embodiment, the current driver can continuously conduct the current path terminal 10111 of the magnetically sensitive semiconductor 1011, keeping the magnetically sensitive semiconductor 1011 always charged and maintaining its initial sensing voltage. This eliminates the need for high-frequency charging by the driver, thus the touch sampling rate is only related to the processing efficiency of the signal processor 20. In other embodiments, the current driver can also use a high-frequency charging method. Specifically, the current driver synchronously conducts the current path terminals 10111 of all magnetically sensitive semiconductors 1011 according to a preset sampling time interval. This preset sampling time interval can be longer than the time taken by the signal processor 20 to process the sensing voltage, ensuring that the touch module 10 only has touch sampling capability during the period when the current path terminal 10111 is conducting. By adjusting the preset sampling time interval, an autonomously adjustable touch sampling rate can be achieved.

[0040] In one embodiment, sensing voltages are output from the sensing voltage output terminals 10112 of different magnetic semiconductors 1011 through different sensing voltage connections. The signal processor 20 can determine the coordinates of the magnetic semiconductor 101 in the touch array 101 where the touch is being pressed by measuring the difference in sensing voltages between the different magnetic semiconductors 1011 in the touch array 101, thereby determining the position of the touch module 10 where the touch is being pressed. Specifically, for example, if the magnetic semiconductor 1011 in the first row and first column undergoes touch deformation, the sensing voltage output to the signal processing module 20 by the magnetic semiconductor 1011 in the first row and first column through the corresponding sensing voltage connection is smaller than the voltage values ​​output to the signal processing module 20 by the other magnetic semiconductors 1011 through the corresponding sensing voltage connection. Therefore, it can be determined that the touch position is located at the magnetic semiconductor 1011 in the first row and first column.

[0041] In one embodiment, the magnetic field generator 102 can be a permanent magnet or other excitation mechanism, and the ground terminals 10113 of all magnetically sensitive semiconductors 1011 can be connected to the same common terminal, so that the ground terminals 10113 of all magnetically sensitive semiconductors 1011 have the same potential. Further, the magnetic field generator 102 can also be parallel to the row direction of the touch array 101. Specifically, the magnetic field generator 102 includes two magnets, the height of which can be the same and both greater than or equal to the height of the magnetically sensitive semiconductor 1011. The length of the two magnets is greater than or equal to the length of the touch array 101, so that magnetic field lines pass through each part of the magnetically sensitive semiconductor 1011, thereby improving the touch sensitivity.

[0042] In one embodiment, the current path wiring between two adjacent magnetic semiconductors 1011 in the same row is parallel to the row direction of the touch array 101; and / or, the sensing voltage wiring between two adjacent magnetic semiconductors 1011 in the same column is parallel to the column direction of the touch array 101.

[0043] In one embodiment, the magnetically sensitive semiconductor 1011 is preferably made of silicon, germanium, indium antimonide (InSb), etc. In another embodiment, the magnetically sensitive semiconductor 1011 is a cuboid, with both its length and width dimensions being less than or equal to 5 mm. Specifically, all magnetically sensitive semiconductors 1011 in the touch array 101 can have the same dimensions.

[0044] In one embodiment, the angle between the current conduction direction and the magnetic field direction in the magnetic semiconductor 1011 is less than or equal to 90 degrees.

[0045] Please refer to Figure 4 , Figure 4 This is a flowchart illustrating the operation of a touch module provided in one embodiment of this application. Figure 4As shown, the current driver of the touch module excites the current at the current path terminal of the magnetic semiconductor, and the sensing voltage is converted to the same potential in all magnetic semiconductors. Determine if there is a change in the sensed voltage; If there is no change in the sensed voltage, then remain unchanged; If there is a change in the sensing voltage, the signal processor determines the pressing position and pressing force based on the sensing voltage and generates a touch sensing signal; Wait for all sensed voltages to become equipotential, and return to the step of determining whether there is a change in sensed voltage after the sensed voltages become equipotential.

[0046] Please refer to Figure 5 , Figure 5 This is a schematic diagram of the connection relationship of the touch module 10 provided in the third embodiment of this application. In one embodiment, the magnetically sensitive semiconductors 1011 arranged in the same column in the touch array 101 are connected in series to the sensing voltage wiring connected to the signal processor 20 through the sensing voltage output terminal 10112. The design of the magnetically sensitive semiconductors 1011 connected in series through the sensing voltage output terminal 10112 can effectively reduce the wiring complexity of the sensing voltage wiring.

[0047] In the third embodiment, since the magnetic semiconductors 1011 arranged in the same column in the touch array 101 are connected in series through the sensing voltage output terminal 10112, the column coordinates of the pressed magnetic semiconductor 1011 can only be determined by sensing voltage alone.

[0048] Therefore, in one embodiment, the signal processor can identify the magnetic semiconductor 1011 that has been deformed by touch after a change in current by comparing the sensing voltage difference between the magnetic semiconductors 1011 in the same row as described above, thereby realizing the column resolution logic of touch control. The current path wiring is connected to the signal processor 20, and the signal processor 20 can determine the row coordinate of the pressed magnetic semiconductor 1011 by the change in current on the current path terminal 10111, and then determine the column coordinate of the pressed magnetic semiconductor 1011 by combining the sensing voltage, thereby realizing the touch control logic.

[0049] In one embodiment, the current driver sequentially turns on the current path terminals 10111 of the magnetic sensitive semiconductor 1011 row by row according to a preset row scanning interval time. By using the conduction time difference of the current path wiring of the magnetic sensitive semiconductors 1011 arranged in different rows in the touch array 101, it is determined which rows of magnetic sensitive semiconductors 1011 have the current path terminals 10111 in the conducting state, thereby temporarily determining the row coordinates of the magnetic sensitive semiconductors 1011 that may be pressed. Then, by using the sensing voltage on the sensing voltage wiring, the column coordinates of the magnetic sensitive semiconductors 1011 that are actually pressed are determined among the currently temporarily determined magnetic sensitive semiconductors 1011 that may be pressed. In this way, the specific row coordinates and column coordinates of the pressed magnetic sensitive semiconductors 1011 are determined, thereby realizing the touch logic.

[0050] Specifically, such as Figure 5 In the third embodiment of this application shown, if the magnetic semiconductor 1011 currently being conducted by the current driver is located in the first row and does not conduct the current path terminals of the magnetic semiconductor 1011 in other rows, it is tentatively assumed that there may be a pressed magnetic semiconductor 1011 in the first row. The signal processor analyzes the sensing voltage of the magnetic semiconductor 1011 that may be pressed to confirm whether there is a pressed magnetic semiconductor 1011. If the sensing voltage on the sensing voltage line of the second column indicates that it is pressed, it is determined that there is a pressed magnetic semiconductor 1011 in the second column of the first row. If the sensing voltage on all sensing voltage lines does not indicate that it is pressed, it is considered that there is no pressed magnetic semiconductor 1011 in the first row. Based on this method, the current driver sequentially scans the current path terminals of the magnetic semiconductor 1011 in the second row, third row, etc., to confirm whether there is a pressed magnetic semiconductor 1011 and its coordinates in the touch module 10.

[0051] Please refer to Figure 6 , Figure 6 This is a side cross-sectional view of a touch panel provided according to an embodiment of this application. This application provides a touch panel including at least one of the above-described touch modules 10.

[0052] In one embodiment, the touch panel further includes a first substrate 30 and a second substrate 40, which are arranged in parallel. The touch module 10 is disposed in the interlayer between the first substrate 30 and the second substrate 40. The first substrate 30 is connected to the ground terminal 10113 of the magnetically sensitive semiconductor 1011, and the second substrate 40 is connected to the current path terminal 10111 and the sensing voltage output terminal 10112 of the magnetically sensitive semiconductor 1011. The current path wiring and the sensing voltage wiring are disposed on the second substrate 40. The first substrate 30 and the second substrate 40 can be made of materials with a certain degree of toughness, such as glass or glass fiber.

[0053] Specifically, in one embodiment, the magnetic field generated by the magnetic field generator 102 is parallel to both the first substrate 30 and the second substrate 40.

[0054] This application provides a touch device, which includes the touch panel described above. In one embodiment, the touch device may be, but is not limited to, a liquid crystal touch device. The liquid crystal touch device further includes a liquid crystal layer located on the side of the first substrate 30 away from the second substrate 40. The liquid crystal molecules in the liquid crystal layer have an electro-optic effect, and the deflection angle of the liquid crystal molecules can be adjusted by controlling the voltage, thereby controlling the amount of light transmitted and realizing grayscale display.

[0055] This application provides a touch module 10, a touch panel, and a touch device. The touch module 10 includes a touch array 101 and a magnetic field generator 102. The touch array 101 includes a plurality of magnetically sensitive semiconductors 1011 arranged in a matrix. The magnetic field generator 102 is used to generate a magnetic field. The current conduction direction in the magnetically sensitive semiconductor 1011 has an angle with the magnetic field direction. When the magnetically sensitive semiconductor 1011 generates touch deformation, deflection, or offset, a sensing voltage is generated based on the change in the magnetic field. The sensing voltage is output to the signal processor 20 through the sensing voltage output terminal 10112 to generate a touch sensing signal. This application directly generates the touch sensing signal from the magnetically sensitive semiconductor 1011. The touch sampling rate is not affected by the scanning rate and is not easily affected by the far-end load effect, thus achieving high energy efficiency.

[0056] The technical features of the present application can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present application.

[0057] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A touch module, characterized in that, The touch module (10) includes a touch array (101) and a magnetic field generator (102); the touch array (101) includes a plurality of magnetically sensitive semiconductors (1011) arranged in a matrix; the magnetic field generator (102) is located on the side of the touch array (101) and is used to generate a magnetic field parallel to the array surface of the touch array (101); Each of the plurality of magnetic sensitive semiconductors (1011) includes a current path terminal (10111), a sensing voltage output terminal (10112), and a ground terminal (10113), and the current path terminals (10111) between two adjacent magnetic sensitive semiconductors (1011) in the same row are connected by a current path wiring. The current conduction direction in the magnetic semiconductor (1011) is at an angle to the magnetic field direction. When the magnetic semiconductor (1011) generates touch deformation, a sensing voltage is generated based on the change in the magnetic field, and the sensing voltage is output to the signal processor (20) through the sensing voltage output terminal (10112) to generate a touch sensing signal.

2. The touch module according to claim 1, characterized in that, The current path wiring between two adjacent magnetically sensitive semiconductors (1011) in the same row is parallel to the row direction of the touch array (101); and / or The sensing voltage connection between the sensing voltage output terminals (10112) of two adjacent magnetic sensing semiconductors (1011) in the same column is parallel to the column direction of the touch array (101).

3. The touch module according to claim 1 or 2, characterized in that, The sensing voltage wiring is connected to the signal processor (20), and the sensing voltage output terminals (10112) of different magnetic semiconductors (1011) respectively output the corresponding sensing voltage to the signal processor (20) through different sensing voltage wiring; Alternatively, the magnetically sensitive semiconductors (1011) in the same column of the touch array (101) are connected in series to the sensing voltage line through the sensing voltage output terminal (10112).

4. The touch module according to claim 1, characterized in that, The current path terminal (10111) of the magnetic sensitive semiconductor (1011) is continuously turned on, or the current path terminal (10111) of the magnetic sensitive semiconductor (1011) is turned on synchronously according to a preset sampling time interval.

5. The touch module according to claim 1, characterized in that, The touch module (10) sequentially turns on the current path terminal (10111) of the magnetic sensitive semiconductor (1011) according to the preset row scanning interval time.

6. The touch module according to claim 1, characterized in that, The magnetically sensitive semiconductor (1011) is a cuboid, and the length and width of the cuboid are both less than or equal to 5 mm.

7. The touch module according to claim 1, characterized in that, The angle between the direction of current conduction and the direction of the magnetic field is less than or equal to 90 degrees.

8. A touch panel, characterized in that, The touch panel includes the touch module (10) as described in any one of claims 1 to 7.

9. The touch panel according to claim 8, characterized in that, The touch panel further includes a first substrate (30) and a second substrate (40), the first substrate (30) and the second substrate (40) are arranged in parallel, and the touch module (10) is disposed in the interlayer between the first substrate (30) and the second substrate (40); The first substrate (30) is provided with a grounding wire connected to the grounding terminal (10113) of the magnetic sensitive semiconductor (1011), and the second substrate (40) is provided with a current path connection line connected to the current path terminal (10111) of the magnetic sensitive semiconductor (1011) and a sensing voltage connection line connected to the sensing voltage output terminal (10112).

10. A touch device, characterized in that, The touch device includes the touch panel described in any one of claims 8 to 9.

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