Array substrate and display panel

Abstract

An array substrate and a display panel, the array substrate comprises a first metal layer, a first insulating layer, a second metal layer, an ion channel construction layer and an electrode layer which are sequentially stacked, the metal activity of the second metal layer is greater than that of the first metal layer, the first insulating layer has a first via hole, the first via hole is communicated with the first metal layer, the electrode layer is connected with the first metal layer through the first via hole, the ion channel construction layer is used for adsorbing water molecules from the outside world into the array substrate and driving the water molecules to move to the second metal layer, and the moisture-proof performance of the array substrate is improved.

Description

Technical Field

[0001] This application relates to the field of display panel technology, specifically to an array substrate and a display panel. Background Technology

[0002] In semiconductor and flat panel display manufacturing, multilayer metal interconnects are a key technology for achieving high-density circuit integration. Different metal layers need to be electrically connected by creating vias in the insulating medium and then using transparent conductive oxide bridges. During the etching process of the vias, the insulating medium at the vias is removed, and water vapor and oxygen in the environment can easily penetrate to the exposed metal layer surface along the thin film grain boundaries, microcracks, etc., leading to the problem that the exposed metal layer is easily corroded. Summary of the Invention

[0003] The purpose of this application is to provide an array substrate and a display panel that solves the problem of exposed metal layers being easily corroded.

[0004] To achieve the objectives of this application, the following technical solution is provided: In a first aspect, the present invention provides an array substrate comprising a first metal layer, a first insulating layer, a second metal layer, an ion channel constructing layer, and an electrode layer stacked sequentially, wherein the metal activity of the second metal layer is greater than that of the first metal layer, the first insulating layer has a first via connecting to the first metal layer, the electrode layer is connected to the first metal layer through the first via, and the ion channel constructing layer is used to adsorb water molecules that permeate into the array substrate from the outside and drive the water molecules to move toward the second metal layer.

[0005] In one embodiment, the ion channel building layer is connected to the first metal layer through the first via.

[0006] In one embodiment, the ion channel construction layer includes a gradient concentration layer and a hygroscopic layer stacked sequentially. The hygroscopic layer is connected to the electrode layer, and the gradient concentration layer is connected to the second metal layer. The hygroscopic layer is used to adsorb water molecules that have penetrated into the array substrate from the outside, and the gradient concentration layer is used to drive the water molecules in the hygroscopic layer to move towards the second metal layer.

[0007] In one embodiment, the ion channel construction layer further includes an ion-active layer disposed between the second metal layer and the gradient concentration layer. The ion-active layer is used to undergo an electrolytic reaction with the second metal layer, and the gradient concentration layer is used to drive water molecules in the hygroscopic layer to move to the ion-active layer.

[0008] In one embodiment, the surface of the second metal layer facing the ion channel building layer and / or the electrode layer has a plurality of pits.

[0009] In one embodiment, the second metal layer includes a first sacrificial anode portion disposed near the first via and connected to the ion channel building layer, and the electrode layer connects the first sacrificial anode portion and the first metal layer.

[0010] In one embodiment, at least one sidewall of the first sacrificial anode portion is connected to the ion channel building layer, and the angle between the sidewall and the stacking direction of the array substrate is an acute angle.

[0011] In one embodiment, the array substrate further includes a transparent substrate, a third metal layer, and a second insulating layer. The third metal layer and the second insulating layer are sequentially stacked on the transparent substrate, with the second metal layer stacked on the surface of the second insulating layer facing away from the transparent substrate. The first insulating layer also has a second via, and the second insulating layer has a third via. One end of the third via communicates with the second via, and the other end communicates with the third metal layer. The electrode layer is sequentially connected to the third metal layer through the second via and the third via.

[0012] In one embodiment, the ion channel construction layer is sequentially connected to the third metal layer through the second via and the third via.

[0013] In one embodiment, the array substrate includes a border area and a display area. The border area is disposed on the outer periphery of the display area. The first metal layer includes a plurality of protected portions, which are spaced apart from each other in the display area. The second metal layer includes a second sacrificial anode portion. The ion channel construction layer includes a first ion channel construction portion. The second sacrificial anode portion and the first ion channel construction portion are both disposed in the border area and connected to each other. The electrode layer connects the second sacrificial anode portion and the plurality of protected portions.

[0014] In one embodiment, the second metal layer includes a plurality of first sacrificial anode portions, the ion channel building layer includes a plurality of second ion channel building portions, the plurality of first sacrificial anode portions are connected to the plurality of portions to be protected one-to-one through the electrode layer, the plurality of second ion channel building portions are connected to the plurality of first sacrificial anode portions one-to-one, and are all connected to the first ion channel building portions.

[0015] In a second aspect, the present invention also provides a display panel comprising an array substrate as described in any one of the embodiments of the first aspect.

[0016] The array substrate provided by this invention comprises a first metal layer, a first insulating layer, a second metal layer, an ion channel constructing layer, and an electrode layer stacked sequentially. The second metal layer has a higher metal activity than the first metal layer. The first insulating layer has a first via connecting to the first metal layer. The electrode layer is connected to the first metal layer through the first via. The ion channel constructing layer is used to adsorb water molecules that penetrate into the array substrate from the outside and drive the water molecules to move towards the second metal layer. This allows the second metal layer, with its higher metal activity, to preferentially react with the water molecules and generate ions when external moisture invades the first metal layer. The generated ions can be transferred to the first metal layer through the electrode layer to apply cathodic protection, thereby inhibiting the corrosion process of the first metal layer. At the same time, the ion channel constructing layer can actively adsorb water molecules that penetrate from the outside and drive them directionally to the second metal layer to ensure the response speed and continuity of the reaction in the second metal layer, thus improving the moisture resistance of the array substrate. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a partial cross-sectional view of an array substrate according to one embodiment; Figure 2 This is a partial cross-sectional view of the array substrate according to another embodiment; Figure 3 This is a partial cross-sectional view of the array substrate according to another embodiment; Figure 4 This is a partial cross-sectional view of the array substrate in another embodiment; Figure 5 This is a structural diagram of an array substrate according to one embodiment.

[0019] Explanation of reference numerals in the attached figures: 100-Array substrate; 10 - First metal layer; 11 - Part to be protected; 20 - First insulating layer; 21 - First via; 22 - Second via; 30 - Second metal layer, 31 - First sacrificial anode portion, 32 - Second sacrificial anode portion, 33 - Pits; 40 - Ion channel construction layer, 41 - Hygroscopic layer, 42 - Gradient concentration layer, 43 - Ion active layer, 44 - First ion channel construction section, 45 - Second ion channel construction section; 50-Electrode layer; 60-Transparent substrate; 70 - Third metal layer; 80 - Second insulating layer; 81 - Third via; AA - Display area, DA - Border area. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0021] It should be noted that when a component is said to be "fixed" to another component, it can be directly on the other component or it can be in a middle component. When a component is said to be "connected" to another component, it can be directly connected to the other component or it may be in a middle component.

[0022] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0023] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0024] Please refer to Figure 1 and Figure 2 The present invention provides an array substrate 100 and a display panel including the array substrate 100. The array substrate 100 includes a first metal layer 10, a first insulating layer 20, a second metal layer 30, an ion channel construction layer 40 and an electrode layer 50 stacked sequentially.

[0025] The first metal layer 10, serving as the core conductive line or electrode to be protected, can be made of materials such as copper, aluminum, molybdenum, titanium, or their multilayer alloys. Optionally, the first metal layer 10 can be the gate metal layer, source / drain metal layer, or signal transmission line of a thin-film transistor.

[0026] The first insulating layer 20 covers the first metal layer 10. Its material can be silicon nitride, silicon oxide, silicon oxynitride or a combination thereof, so as to electrically isolate the first metal layer 10 from other metal layers in the array substrate 100, and at the same time isolate the first metal layer 10 from the influence of external environmental factors such as moisture.

[0027] The second metal layer 30 is disposed on the side of the first insulating layer 20 away from the first metal layer 10, and the metal activity of the second metal layer 30 is greater than that of the first metal layer 10, so that there is an electrochemical potential difference between the first metal layer 10 and the second metal layer 30 that meets the preset requirements.

[0028] An ion channel construction layer 40 covers the second metal layer 30. The ion channel construction layer 40 is used to adsorb water molecules that have penetrated into the array substrate 100 from the outside and drive the water molecules to move towards the second metal layer 30. Specifically, the ion channel construction layer 40 is used to actively adsorb water molecules that have penetrated into the array substrate 100 from the outside through the grain boundaries of the dielectric layer, microcracks, or weak points in the encapsulation, and guides and concentrates the water molecules towards the surface of the second metal layer 30 in a directional driving manner.

[0029] The first insulating layer 20 has a first via 21, which connects to the first metal layer 10 to achieve electrical connection between the first metal layer 10 and an external circuit. Specifically, the first via 21 penetrates the first insulating layer 20 vertically, so that a portion of the upper surface of the first metal layer 10 is exposed through the first via 21. Optionally, the first via 21 can be formed by using processes such as dry etching or wet etching.

[0030] The electrode layer 50 is disposed on the ion channel construction layer 40 and is connected to the first metal layer 10 through the first via 21, and is also connected to the second metal layer 30, so that the electrode layer 50 and the first metal layer 10 form physical contact and ohmic contact at the exposed surface of the first via 21, and also form physical contact and ohmic contact with the exposed surface of the second metal layer 30.

[0031] The electrode layer 50 can be made of transparent conductive oxides such as indium tin oxide, indium zinc oxide, or aluminum zinc oxide, or it can be made of metal thin film materials such as molybdenum, aluminum, or titanium aluminum stack, without limitation. The electrode layer 50 connects the first metal layer 10 and the second metal layer 30 to form an electron transport path between the first metal layer 10 and the second metal layer 30.

[0032] When the second metal layer 30 undergoes a sacrificial reaction with water molecules, i.e., an oxidation reaction, the electrons released from the second metal layer 30 can flow along the electrode layer 50 to the first metal layer 10, causing the electrode potential of the first metal layer 10 to shift negatively. This inhibits the anodic dissolution reaction of the first metal layer 10, thereby suppressing the oxidation and corrosion of the first metal layer 10. Taking aluminum as an example, the chemical reaction formula for the sacrificial reaction is: Al → Al³ + +3e - .

[0033] At the exposed surface of the first metal layer 10, water molecules and oxygen that have penetrated into it undergo a protective reaction, namely a reduction reaction, under the influence of electrons from the second metal layer 30. This reaction consumes the water vapor and oxygen that have penetrated into the first metal layer 10 through the first via 21, further improving the corrosiveness of the local microenvironment. The chemical equation for the protective reaction is: 2H₂O + O₂ + 4e⁻ - →4OH - .

[0034] Optionally, to ensure that there is a preset electrochemical potential difference between the first metal layer 10 and the second metal layer 30, the first metal layer 10 is made of copper or a copper alloy, and the second metal layer 30 is made of aluminum, aluminum alloy, magnesium, zinc or a combination thereof, so that when external moisture invades, the first metal layer 10 and the second metal layer 30 form an ion pathway to form an efficient galvanic cell structure, thereby ensuring that the second metal layer 30 can be corroded preferentially over the first metal layer 10.

[0035] In a specific embodiment, the second metal layer 30 is made of aluminum-based microalloys such as aluminum-magnesium alloy or aluminum-zinc alloy. The atomic percentage content of magnesium or zinc added to the aluminum base is 0.5%-2%, so that magnesium or zinc atoms can disrupt the continuity and density of the original oxide film on the aluminum surface, reduce the stability of the oxide film, and enable the second metal layer 30 to get rid of the passivation film after adsorbing a small amount of moisture, thereby improving the response speed and stability of the second metal layer 30 in the sacrificial reaction.

[0036] In a specific embodiment, the second metal layer 30 includes a first sacrificial anode portion 31, which is disposed near the first via 21 and connected to the ion channel building layer 40. The electrode layer 50 connects the first sacrificial anode portion 31 and the first metal layer 10 to further enhance the effect of the second metal layer 30 in undergoing a sacrificial reaction to protect the first metal layer 10.

[0037] Specifically, the first metal layer 10 includes a protected part 11, and a first via 21 is connected to the protected part 11. The electrode layer 50 is connected to the protected part 11 through the first via 21. The protected part 11 can be the end of the gate signal line in the thin film transistor array, the node where the source and drain data lines are connected by a jumper through a transparent conductive oxide bridge, or the metal pad area where the dense distribution of vias causes stress concentration in the insulating medium, etc., which are areas with a high probability of corrosion due to the influence of intruding moisture.

[0038] By placing the first sacrificial anode portion 31 adjacent to the first via 21 and directly connecting it to both the electrode layer 50 and the ion channel building layer 40, when water vapor penetrates along the hole wall or medium interface of the first via 21, the ion channel building layer 40 can preferentially guide water molecules to the surface of the first sacrificial anode portion 31. At the same time, the electrode layer 50 establishes a low-resistance electron channel between the first sacrificial anode portion 31 and the protected portion 11 of the first metal layer 10. The first sacrificial anode portion 31 can specifically suppress the metal corrosion process of the protected portion 11, so that the second metal layer 30 does not need to cover the entire first metal layer 10. This significantly reduces the laying area and material usage of the second metal layer 30 in the array substrate 100, which helps to improve the pixel aperture ratio of the display panel and reduces material costs.

[0039] Furthermore, at least one sidewall of the first sacrificial anode portion 31 is connected to the ion channel building layer 40, and the angle between it and the stacking direction of the array substrate 100 is an acute angle, so as to increase the connection area between the first sacrificial anode portion 31 and the ion channel building layer 40, thereby improving the response speed and reaction rate of the second metal layer 30 undergoing sacrificial reaction.

[0040] Furthermore, at least one sidewall of the first sacrificial anode portion 31 is connected to the electrode layer 50, and the angle between it and the stacking direction of the array substrate 100 is an acute angle, so as to increase the connection area between the first sacrificial anode portion 31 and the electrode layer 50, thereby improving the current transfer capability of the electrode layer 50 to transfer electrons between the second metal layer 30 and the first metal layer 10.

[0041] For a detailed implementation, please refer to Figure 3The second metal layer 30 has multiple pits 33 on its surface facing the ion channel building layer 40 and / or the electrode layer 50. Specifically, the surface of the first sacrificial anode portion 31 facing away from the first insulating layer 20, i.e., the top surface of the first sacrificial anode portion 31, the surface of the first sacrificial anode portion 31 connected to the ion channel building layer 40, and the surface of the first sacrificial anode portion 31 connected to the electrode layer 50, all have multiple pits 33. This allows the second metal layer 30 to be made of aluminum-based metal. Due to the small radius of curvature of the inner wall surface of the pits 33, the oxide film formed on the surface of the second metal layer 30 in the area with the pits 33 is thinner and stress-concentrated, forming an amorphous and discontinuous film layer. This reduces the difficulty and start-up delay of the sacrificial reaction occurring in the area of ​​the second metal layer 30 with the pits 33.

[0042] For a detailed implementation, please refer to Figure 4 The ion channel building layer 40 is a membrane layer with a multilayer composite structure to enhance the ability of the ion channel building layer 40 to adsorb and drive water molecules to move to the second metal layer 30.

[0043] Specifically, the ion channel construction layer 40 includes a gradient concentration layer 42 and a moisture-absorbing layer 41 that are stacked sequentially. The moisture-absorbing layer 41 is connected to the electrode layer 50, and the gradient concentration layer 42 is connected to the second metal layer 30. The moisture-absorbing layer 41 is used to adsorb water molecules that have penetrated into the array substrate 100 from the outside, and the gradient concentration layer 42 is used to drive the water molecules in the moisture-absorbing layer 41 to move towards the second metal layer 30.

[0044] The moisture-absorbing layer 41 is connected to the electrode layer 50, positioning it at the beginning of the external moisture intrusion path. This improves the efficiency of the moisture-absorbing layer 41 in adsorbing water molecules that penetrate into the array substrate 100 from the outside. The moisture-absorbing layer 41 can be made of a material with a high specific surface area and abundant hydrophilic groups, including porous silica, porous silica oxynitride, polyvinyl alcohol, or polyethylene oxide, among other hydrophilic polymers. This allows the moisture-absorbing layer 41 to capture and enrich water molecules through capillary condensation and hydrogen bonding, thereby reducing moisture intrusion into the first metal layer 10. Simultaneously, it provides sufficient and continuous water molecules to the second metal layer 30, thus maintaining the sacrificial reaction of the second metal layer 30 and continuously providing electrons to the first metal layer 10, thereby enhancing the protective effect of the second metal layer 30 on the first metal layer 10.

[0045] A gradient concentration layer 42 is disposed between the hygroscopic layer 41 and the second metal layer 30, having a salt concentration gradient that gradually increases from the hygroscopic layer 41 toward the second metal layer 30. Specifically, the salt concentration is lowest on the side of the gradient concentration layer 42 closest to the hygroscopic layer 41 and highest on the side of the gradient concentration layer 42 closest to the second metal layer 30, thereby forming a directional path within the gradient concentration layer 42 that drives water molecules to move from the hygroscopic layer 41 toward the second metal layer 30.

[0046] When water vapor is captured by the hygroscopic layer 41, driven by the chemical potential of the gradually increasing concentration gradient in the gradient concentration layer 42, water molecules migrate directionally from the low salt concentration region to the high salt concentration region by means of permeation or surface diffusion. That is, water molecules migrate directionally from the hygroscopic layer 41 to the second metal layer 30, which improves the ability of the ion channel building layer 40 to adsorb and drive trace amounts of water vapor. When trace amounts of water vapor permeate and invade the array substrate 100, the ion channel building layer 40 can also provide a continuous electrolytic environment for the surface of the second metal layer 30, ensuring the continuity of the sacrificial reaction of the second metal layer 30.

[0047] Optionally, the concentration gradient of the ionizable salt doping within the gradient concentration layer 42 is from 0.1% to 3%. Optionally, the interior of the gradient concentration layer 42 can be doped with ionizable salts to form a concentration gradient. The ionizable salts can be compounds such as sodium chloride, potassium chloride, and sodium sulfate that can provide ions with high conductivity after dissolution.

[0048] Furthermore, the ion channel construction layer 40 also includes an ion-active layer 43, which is disposed between the second metal layer 30 and the gradient concentration layer 42. The ion-active layer 43 is used to undergo an electrolytic reaction with the second metal layer 30, and the gradient concentration layer 42 is used to drive water molecules in the hygroscopic layer 41 to move to the ion-active layer 43.

[0049] Specifically, the ion-active layer 43 can be a porous dielectric membrane containing a high concentration of ionizable salts, specifically doped with halide salts such as sodium chloride, potassium chloride, and ammonium chloride, or even doped with sulfates, without limitation. When water molecules from the gradient concentration layer 42 and the hygroscopic layer 41 are transferred to the ion-active layer 43, the ionizable salts in the ion-active layer 43 dissolve, forming a strong electrolyte microenvironment rich in chloride ions or other halide ions on the surface of the second metal layer 30.

[0050] When the second metal layer 30 is made of aluminum-based metal, the chloride ions dissolved and released within the ion-active layer 43 react with the alumina passivation film on the surface of the second metal layer 30 to disrupt the integrity and continuity of the alumina passivation film, thereby ensuring that the second metal layer 30 undergoes a sacrificial reaction when moisture invades. Furthermore, the ions dissolved and released within the ion-active layer 43 can also provide sufficient conductive ions for the sacrificial reaction of the second metal layer 30, thereby improving the response speed and reaction rate of the sacrificial reaction when moisture invades.

[0051] In a specific implementation, the spatial configuration between the ion channel construction layer 40 and the first metal layer 10 can be flexibly selected according to specific corrosion protection requirements and process conditions.

[0052] In one implementation, please refer to Figure 1The ion channel construction layer 40 is spaced apart from the first metal layer 10, meaning the first insulating layer 20 completely separates the ion channel construction layer 40 from the first metal layer 10. The first metal layer 10 and the second metal layer 30 are only connected electronically through the electrode layer 50. When ambient moisture seeps into the array substrate 100 through the first via 21 or other weak areas, water molecules first diffuse at the interface between the electrode layer 50 and the first insulating layer 20 or within the first via 21. Due to the strong hygroscopicity and water molecule directional driving ability of the ion channel construction layer 40, the water molecules diffused into the ion channel construction layer 40 can move directionally to the surface of the second metal layer 30 under the action of the ion channel construction layer 40, thereby maintaining the electrolytic environment required for the sacrificial reaction of the second metal layer 30.

[0053] In addition, the ion channel construction layer 40 is spaced apart from the first metal layer 10, which avoids the risk of side reactions or galvanic corrosion of the first metal layer 10 caused by ionizable salts or other active components that may be contained in the ion channel construction layer 40 directly contacting the first metal layer 10.

[0054] In another implementation, please refer to Figure 2 The ion channel construction layer 40 is connected to the first metal layer 10 through the first via 21. Specifically, the ion channel construction layer 40 extends on the inner wall of the first via 21 and contacts the surface of the first metal layer 10. When water vapor invades along the interface of the first via 21, the portion of the ion channel construction layer 40 located within the first via 21 can adsorb water molecules within the first via 21 and drive the water molecules to the second metal layer 30, thereby reducing the degree of corrosion of the first metal layer 10 during the anodic reaction in the second metal layer 30. Furthermore, an ion-conducting pathway is formed between the second metal layer 30 and the first metal layer 10 through the connection of the ion channel construction layer 40, further improving the efficiency of electrons generated during the sacrificial reaction in the second metal layer 30 moving to the first metal layer 10.

[0055] In a specific embodiment, the array substrate 100 further includes a transparent substrate 60, a third metal layer 70, and a second insulating layer 80. The third metal layer 70 and the second insulating layer 80 are sequentially stacked on the transparent substrate 60, and the second metal layer 30 is stacked on the surface of the second insulating layer 80 facing away from the transparent substrate 60. The transparent substrate 60 can be a glass substrate, a quartz substrate, or a flexible polyimide substrate, etc., and is not limited thereto. The third metal layer 70 can be a light-shielding layer, a gate layer, or other metal wiring layer.

[0056] The first insulating layer 20 also has a second via 22, and the second insulating layer 80 has a third via 81. One end of the third via 81 is connected to the second via 22, and the other end is connected to the third metal layer 70. The electrode layer 50 is connected to the third metal layer 70 in sequence through the second via 22 and the third via 81 to realize the hierarchical connection between the first metal layer 10 and the third metal layer 70.

[0057] Specifically, the second metal layer 30 and the third metal layer 70 can also be electrically connected through the electrode layer 50. When external moisture invades the array substrate 100, the electrons generated by the sacrificial reaction in the second metal layer 30 can also be transferred to the third metal layer 70 through the electrode layer 50, thereby simultaneously protecting the first metal layer 10 and the third metal layer 70. The principle and working process of the second metal layer 30 protecting the third metal layer 70 are similar to those of protecting the first metal layer 10, and will not be repeated here.

[0058] Furthermore, the ion channel construction layer 40 is connected to the third metal layer 70 through the second via 22 and the third via 81 in sequence, so that the ion channel construction layer 40 can adsorb the water that invades the third metal layer 70 and drive it to the second metal layer 30. At the same time, an ion-conducting pathway is formed between the second metal layer 30 and the third metal layer 70, which further improves the efficiency of electrons generated when the second metal layer 30 undergoes a sacrificial reaction to move to the third metal layer 70.

[0059] For a detailed implementation, please refer to Figure 5 The array substrate 100 includes a border region DA and a display region AA. The border region DA is disposed on the outer periphery of the display region AA. The first metal layer 10 includes a plurality of protected portions 11, which are disposed at intervals in the display region AA. The protected portions 11 may be the ends of gate signal lines in the thin-film transistor array distributed in the display region AA, nodes where source and drain data lines are connected by jumpers through transparent conductive oxide bridges, and metal pad areas where dense via distribution leads to stress concentration in the insulating medium, which are areas with a high probability of corrosion due to intrusion of moisture.

[0060] The second metal layer 30 includes a second sacrificial anode portion 32, and the ion channel construction layer 40 includes a first ion channel construction portion 44. Both the second sacrificial anode portion 32 and the first ion channel construction portion 44 are disposed in the border area DA and interconnected. The electrode layer 50 connects the second sacrificial anode portion 32 and multiple protected portions 11. Since the border area DA does not have pixel display function and has relatively ample space, it is beneficial to increase the placement area of ​​the second sacrificial anode portion 32 and the first ion channel construction portion 44, thereby improving the protective capability of the second metal layer 30.

[0061] The electrode layer 50 extends from each protected portion 11 within the display area AA and is electrically connected to the second sacrificial anode portion 32. When external moisture permeates into the array substrate 100, the first ion channel construction portion 44 adsorbs and drives water molecules to move to the surface of the second sacrificial anode portion 32. The second sacrificial anode portion 32 undergoes a sacrificial reaction and provides electrons to multiple protected portions 11 through the electrode layer 50, thereby achieving global protection of the display area AA.

[0062] Furthermore, the second metal layer 30 includes a plurality of first sacrificial anode portions 31, and the ion channel construction layer 40 includes a plurality of second ion channel construction portions 45. The plurality of first sacrificial anode portions 31 are connected to the plurality of protected portions 11 one by one through the electrode layer 50, and the plurality of second ion channel construction portions 45 are connected to the plurality of first sacrificial anode portions 31 one by one, and are all connected to the first ion channel construction portions 44.

[0063] When external moisture seeps into the array substrate 100, the local moisture in the display area AA is captured by the corresponding second ion channel construction part 45 and driven to the first ion channel construction part 44 and the second sacrificial anode part 32 to further enhance the protective effect of the second metal layer 30 on the first metal layer 10.

[0064] The array substrate 100 provided by the present invention comprises a first metal layer 10, a first insulating layer 20, a second metal layer 30, an ion channel constructing layer 40, and an electrode layer 50 stacked sequentially. The metal activity of the second metal layer 30 is greater than that of the first metal layer 10. The first insulating layer 20 has a first via 21 that connects to the first metal layer 10. The electrode layer 50 is connected to the first metal layer 10 through the first via 21. The ion channel constructing layer 40 is used to adsorb water molecules that permeate into the array substrate 100 from the outside and drive the water molecules to the second metal layer 50. The movement of the metal layer 30 allows the second metal layer 30, which has greater metal activity, to preferentially react with water molecules and generate ions when external moisture invades the first metal layer 10. The generated ions can be transferred to the first metal layer 10 via the electrode layer 50 to apply cathodic protection, thereby inhibiting the corrosion process of the first metal layer 10. At the same time, the ion channel construction layer 40 can actively adsorb water molecules that have penetrated from the outside and drive them to the second metal layer 30 in a directional manner to ensure the response speed and continuity of the reaction of the second metal layer 30, thereby improving the moisture resistance of the array substrate 100.

[0065] In the description of the embodiments of this application, it should be noted that the orientation or positional relationship of the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and other indicators are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0066] The above-disclosed embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of this application. Those skilled in the art will understand that all or part of the processes for implementing the above embodiments and equivalent variations made in accordance with the claims of this application are still within the scope of this application.

Claims

1. An array substrate, characterized in that, The array comprises a first metal layer, a first insulating layer, a second metal layer, an ion channel constructing layer, and an electrode layer stacked sequentially. The metal activity of the second metal layer is greater than that of the first metal layer. The first insulating layer has a first via, which connects to the first metal layer. The electrode layer is connected to the first metal layer through the first via and to the second metal layer. The ion channel constructing layer is used to adsorb water molecules that have permeated into the array substrate from the outside and drive the water molecules to move towards the second metal layer. When the second metal layer reacts with the water molecules, the electrons released by the second metal layer can flow along the electrode layer to the first metal layer.

2. The array substrate according to claim 1, characterized in that, The ion channel construction layer is connected to the first metal layer through the first via.

3. The array substrate according to claim 1, characterized in that, The ion channel construction layer includes a gradient concentration layer and a hygroscopic layer stacked sequentially. The hygroscopic layer is connected to the electrode layer, and the gradient concentration layer is connected to the second metal layer. The hygroscopic layer is used to adsorb water molecules that have penetrated into the array substrate from the outside, and the gradient concentration layer is used to drive the water molecules in the hygroscopic layer to move towards the second metal layer.

4. The array substrate according to claim 3, characterized in that, The ion channel construction layer further includes an ion-active layer disposed between the second metal layer and the gradient concentration layer. The ion-active layer is used to undergo an electrolytic reaction with the second metal layer, and the gradient concentration layer is used to drive water molecules in the hygroscopic layer to move to the ion-active layer.

5. The array substrate according to claim 1, characterized in that, The second metal layer has multiple pits on its surface facing the ion channel building layer and / or the electrode layer.

6. The array substrate according to claim 1, characterized in that, The second metal layer includes a first sacrificial anode portion disposed near the first via and connected to the ion channel building layer, and the electrode layer connects the first sacrificial anode portion and the first metal layer.

7. The array substrate according to claim 6, characterized in that, At least one sidewall of the first sacrificial anode is connected to the ion channel building layer, and the angle between the sidewall and the stacking direction of the array substrate is an acute angle.

8. The array substrate according to any one of claims 1-7, characterized in that, The array substrate further includes a transparent substrate, a third metal layer, and a second insulating layer. The third metal layer and the second insulating layer are sequentially stacked on the transparent substrate, and the second metal layer is stacked on the surface of the second insulating layer facing away from the transparent substrate. The first insulating layer also has a second via, and the second insulating layer has a third via. One end of the third via is connected to the second via, and the other end is connected to the third metal layer. The electrode layer is connected to the third metal layer in sequence through the second via and the third via.

9. The array substrate according to claim 8, characterized in that, The ion channel construction layer is connected to the third metal layer sequentially through the second via and the third via.

10. The array substrate according to any one of claims 1-7, characterized in that, The array substrate includes a border area and a display area. The border area is disposed on the outer periphery of the display area. The first metal layer includes a plurality of protected portions, which are disposed at intervals in the display area. The second metal layer includes a second sacrificial anode portion, the ion channel construction layer includes a first ion channel construction portion, the second sacrificial anode portion and the first ion channel construction portion are both disposed in the frame region and connected to each other, and the electrode layer connects the second sacrificial anode portion and a plurality of the portions to be protected.

11. The array substrate according to claim 10, characterized in that, The second metal layer includes a plurality of first sacrificial anode portions, and the ion channel construction layer includes a plurality of second ion channel construction portions. The plurality of first sacrificial anode portions are connected to the plurality of portions to be protected one-to-one through the electrode layer, and the plurality of second ion channel construction portions are connected to the plurality of first sacrificial anode portions one-to-one, and are all connected to the first ion channel construction portions.

12. A display panel, characterized in that, Includes the array substrate as described in any one of claims 1-11.

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