一种Ⅱ类超晶格中波红外探测器及其制作方法

By employing a fabrication method for a type II superlattice mid-wave infrared detector, and utilizing techniques such as deep isolation trench physical blocking, gradient doping, and integrated metallization, the crosstalk and leakage problems of mid-wave infrared multi-element detectors in the railway field have been solved, improving the accuracy and reliability of the device and meeting the application requirements of the railway environment.

CN122206004BActive Publication Date: 2026-07-17山西创芯光电科技有限公司

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
山西创芯光电科技有限公司
Filing Date
2026-05-18
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing mid-wave infrared multi-element detectors have problems in railway applications, such as difficulty in effectively suppressing electrical crosstalk between multiple pixels, large leakage current on the device surface, and poor process adaptability, which affect their accuracy and reliability in railway fault diagnosis.

Method used

The fabrication method of a type II superlattice mid-wave infrared detector is adopted, including epitaxial wafer growth, self-aligned double-layer hard mask preparation, step-by-step dry etching, composite passivation layer deposition and integrated metallization. Through physical blocking of deep isolation trenches, gradient doping of absorption regions and shorting of PN junctions in invalid regions, combined with precise etching and surface treatment, a three-layer stepped mesa structure and a composite passivation layer are formed.

Benefits of technology

It effectively reduces the inter-pixel crosstalk ratio to below 0.8%, reduces dark current density by more than 50%, improves process adaptability and device yield, enhances the accuracy of rail fault diagnosis and photoelectric performance, and meets the service requirements of complex rail environments.

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Abstract

本申请提供了一种Ⅱ类超晶格中波红外探测器及其制作方法,属于红外探测器领域;该方法包括以下步骤:外延片生长;自对准双层硬掩模制备,在外延片表面沉积第一硬掩模层;采用光刻技术在第一硬掩模层上形成下电极区域及深隔离槽区域图形;在外延片表面沉积第二硬掩模层;采用光刻技术在第二硬掩模层上形成上电极区域图形;采用分步干法刻蚀技术在外延片表面形成上电极区浅台面、下电极区台面、深隔离槽的三层阶梯台面结构;对外延片进行表面处理,沉积三层复合钝化层;电极制作;互连与封装;本申请可有效解决现有中波红外多元探测器制备中存在的多元像元电串音难以有效抑制、器件表面漏电流大以及工艺适配性差等问题。
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